SEMICONDUCTOR SUBSTRATE OF GAAS AND SEMICONDUCTOR DEVICE

Norbert Linder

Patent

Atlas literature

Patent

US 7,875,961

SEMICONDUCTOR SUBSTRATE OF GAAS AND SEMICONDUCTOR DEVICE

Norbert Linder, Günther Grünninger, Peter Heidborn, Klaus Streubel et al.

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 15 dependent

1
IndependentGaAsAl₁-yGayAs₁-xPxGaAs semiconductor substrate with Al1-yGayAs1-xPx layer sequence
A semiconductor substrate of GaAs with a semiconductor layer sequence applied on top of the substrate, the semiconductor layer sequence comprising a plurality of semiconductor layers of Al 1-yGayAs1.xPx with 0 < x 1 and 0 y 1, a number of the semiconductor layers respectively comprising a phosphorus component x which is greater than in a neighboring semiconductor layer lying thereunder in the direction of growth of the semiconductor layer sequence, wherein two semiconductor layers directly preceding the uppermost semiconductor layer of the semiconductor layer sequence have a smaller lattice constant than the uppermost layer.
1. 2
  Dependent← claim 1Al₁-yGayAs₁-xPxGaAs semiconductor substrate with Al1-yGayAs1-xPx layer sequence
  The semiconductor substrate as claimed in claim 1, wherein the phosphorus component x increases stage by stage in at least 3 successive semiconductor layers of the semiconductor layer sequence.
2. 3
  Dependent← claim 1Al₁-yGayAs₁-xPxGaAs semiconductor substrate with Al1-yGayAs1-xPx layer sequence
  The semiconductor substrate as claimed in claim 1, wherein, for the phosphorus component x in the uppermost semiconductor layer of the semiconductor layer sequence, x > 0.15.
3. 4
  Dependent← claim 1Al₁-yGayAs₁-xPxGaAs semiconductor substrate with Al1-yGayAs1-xPx layer sequence
  The semiconductor substrate as claimed in claim 1, wherein, for the aluminum component 1-y in the semiconductor layer sequence, 1-y = 0.
4. 5
  Dependent← claim 1Al₁-yGayAs₁-xPxGaAs semiconductor substrate with Al1-yGayAs1-xPx layer sequence
  The semiconductor substrate as claimed in claim 1, wherein the overall thickness of the semiconductor layer sequence is 10 p m or less.
5. 6
  Dependent← claim 1Al₁-yGayAs₁-xPxGaAs semiconductor substrate with Al1-yGayAs1-xPx layer sequence
  The semiconductor substrate as claimed in claim 1, wherein the semiconductor layers have a thickness of between 100 nm and 1000 nm, inclusive.
6. 7
  Dependent← claim 1Al₁-yGayAs₁-xPxGaAs semiconductor substrate with Al1-yGayAs1-xPx layer sequence
  The semiconductor substrate as claimed in claim 1, wherein at least one semiconductor layer of the semiconductor layer sequence is relaxed.
7. 9
  Dependent← claim 1GaAsAl₁-yGayAs₁-xPxoptoelectronic semiconductor device on GaAs substrate
  A semiconductor device, wherein the semiconductor device comprises a GaAs substrate with a semiconductor layer sequence as claimed in claim 1 applied on top of the substrate.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaAs semiconductor substrate with Al₁-yGayAs₁-xPx layer sequence

Al₁-yGayAs₁-xPxsemiconductor layer sequence

GaAssubstrate

optoelectronic semiconductor device on GaAs substrate

Al₁-yGayAs₁-xPxsemiconductor layer sequence

GaAssubstrate

Materials

Materials described outside the worked examples.

GaAs substrate

GaAs

Substrate

Al₁-yGayAs₁-xPx semiconductor layer

Al₁-yGayAs₁-xPx

Semiconductor Layer Sequence

InxAlyGa₁-x-yP

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	100–1000 nm	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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