Patent
US 8,815,392PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT
Ulrich Kretzer
US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 8,815,392Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide single crystal, nipi i im: a charge carrier SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170383.7.367.778.2112.830.svg 0.173 5.817 Drawing Black and white coefficient of the:.1l liu n arsenide single crystal is at most 2.5 cm-at a v.. elen ih of 1000 nm, at most 1.8 c m at a wavelength of 1 100 n m and at most 1.0 cm-a t a wavelength of 1200 nm, [[and]] w herein the area density of etch pitches on cross-sections perpendicular to the crystal axis does not exceed 1500 cm,Ind A eI in l I '-,.lnii n 'i iI hel 's'. SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170383.12.365.1193.548.1244.svg 0.17 0.61 Graph Black and white
A gallium arsenide single crystal according to claim 1, comprising a charge carrier concentration of at most 5x10 1" cm3.
(O i i2i1n.l) A gallium arsenide single crystal according to claim 1, cnIepi ising an n-type conductivity, wherein the charge carrier concentration corresponds to the electron concentration.
A gallium arsenide single crystal according to claim 1, comprising a boron content of at least 5x10 1" cm3. -2- 4825-7128-3737 1 SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170384.2.362.391.2051.509.svg 0.393 5.63 Graph Black and white Att y. Dkt. No. 062248-0 134
(Ori g inal) A gallium arsenide single crystal according to claim 1, wherein the area SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170384.5.362.724.2044.839.svg 0.383 5.607 Graph Black and white original
A.ilium arsenide substrate wafer, formed by individualization from.he gallium arsenide, io k crystal according to claim 1. 1 1. A gallium arsenide substrate wafer, for m ed by individualization from the gallium arsenide single crystal according to claim 2.
1 8. A method employing a -:.lliumn arsenide substrate wafer according to claim 1 1, comprising g enerating radiation and passing the generated radiation I lu.ug the substrate wafer parallel to or perpendicular to ic wafer surface.
A gallium arsenide single crystal ~nmpi niing an electron concentration of at least lx 10" cm 3 and at most lx101 em3, w herein an optical absorption coefficient of ilL gallium arsenide single crystal is at most 2.0 cm -1 at a N, \ c k nIl of 1000 nm, at most 1.4 cm -1 at a wavelength of 1 100 nm and at most 0.8 cm-at a wavelength of 1200 nm, and wherein the area density of etch pitches on cross-sections perpendicular to 1he crystal axis does not exceed 1500 cm -2..end A hiciii iI_ _-cn eni iti n i, hl 1016 SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170383.20.366.1859.458.1909.svg 0.167 0.307 Graph Black and white
A gallium arsenide single crystal according to claim 2, wherein the area Atty. Dk t. No. 'o: 48-01 34 original
A gallium arsenide single crystal according to claim 2, wh ere in an EL 2- concentration is below 5x 10" cm -.
. canceled
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide substrate wafer
Materials described outside the worked examples.
gallium arsenide single crystal
GaAs
boron dopant
B
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical absorption coefficient at 1000 nm (claim 1 upper bound) | — | GaAs |
optical absorption coefficient at 1100 nm (claim 1 upper bound) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,815,392Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide single crystal, nipi i im: a charge carrier SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170383.7.367.778.2112.830.svg 0.173 5.817 Drawing Black and white coefficient of the:.1l liu n arsenide single crystal is at most 2.5 cm-at a v.. elen ih of 1000 nm, at most 1.8 c m at a wavelength of 1 100 n m and at most 1.0 cm-a t a wavelength of 1200 nm, [[and]] w herein the area density of etch pitches on cross-sections perpendicular to the crystal axis does not exceed 1500 cm,Ind A eI in l I '-,.lnii n 'i iI hel 's'. SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170383.12.365.1193.548.1244.svg 0.17 0.61 Graph Black and white
A gallium arsenide single crystal according to claim 1, comprising a charge carrier concentration of at most 5x10 1" cm3.
(O i i2i1n.l) A gallium arsenide single crystal according to claim 1, cnIepi ising an n-type conductivity, wherein the charge carrier concentration corresponds to the electron concentration.
A gallium arsenide single crystal according to claim 1, comprising a boron content of at least 5x10 1" cm3. -2- 4825-7128-3737 1 SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170384.2.362.391.2051.509.svg 0.393 5.63 Graph Black and white Att y. Dkt. No. 062248-0 134
(Ori g inal) A gallium arsenide single crystal according to claim 1, wherein the area SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170384.5.362.724.2044.839.svg 0.383 5.607 Graph Black and white original
A.ilium arsenide substrate wafer, formed by individualization from.he gallium arsenide, io k crystal according to claim 1. 1 1. A gallium arsenide substrate wafer, for m ed by individualization from the gallium arsenide single crystal according to claim 2.
1 8. A method employing a -:.lliumn arsenide substrate wafer according to claim 1 1, comprising g enerating radiation and passing the generated radiation I lu.ug the substrate wafer parallel to or perpendicular to ic wafer surface.
A gallium arsenide single crystal ~nmpi niing an electron concentration of at least lx 10" cm 3 and at most lx101 em3, w herein an optical absorption coefficient of ilL gallium arsenide single crystal is at most 2.0 cm -1 at a N, \ c k nIl of 1000 nm, at most 1.4 cm -1 at a wavelength of 1 100 nm and at most 0.8 cm-at a wavelength of 1200 nm, and wherein the area density of etch pitches on cross-sections perpendicular to 1he crystal axis does not exceed 1500 cm -2..end A hiciii iI_ _-cn eni iti n i, hl 1016 SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170383.20.366.1859.458.1909.svg 0.167 0.307 Graph Black and white
A gallium arsenide single crystal according to claim 2, wherein the area Atty. Dk t. No. 'o: 48-01 34 original
A gallium arsenide single crystal according to claim 2, wh ere in an EL 2- concentration is below 5x 10" cm -.
. canceled
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide substrate wafer
Materials described outside the worked examples.
gallium arsenide single crystal
GaAs
boron dopant
B
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical absorption coefficient at 1000 nm (claim 1 upper bound) | — | GaAs |
optical absorption coefficient at 1100 nm (claim 1 upper bound) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,815,392Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide single crystal, nipi i im: a charge carrier SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170383.7.367.778.2112.830.svg 0.173 5.817 Drawing Black and white coefficient of the:.1l liu n arsenide single crystal is at most 2.5 cm-at a v.. elen ih of 1000 nm, at most 1.8 c m at a wavelength of 1 100 n m and at most 1.0 cm-a t a wavelength of 1200 nm, [[and]] w herein the area density of etch pitches on cross-sections perpendicular to the crystal axis does not exceed 1500 cm,Ind A eI in l I '-,.lnii n 'i iI hel 's'. SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170383.12.365.1193.548.1244.svg 0.17 0.61 Graph Black and white
A gallium arsenide single crystal according to claim 1, comprising a charge carrier concentration of at most 5x10 1" cm3.
(O i i2i1n.l) A gallium arsenide single crystal according to claim 1, cnIepi ising an n-type conductivity, wherein the charge carrier concentration corresponds to the electron concentration.
A gallium arsenide single crystal according to claim 1, comprising a boron content of at least 5x10 1" cm3. -2- 4825-7128-3737 1 SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170384.2.362.391.2051.509.svg 0.393 5.63 Graph Black and white Att y. Dkt. No. 062248-0 134
(Ori g inal) A gallium arsenide single crystal according to claim 1, wherein the area SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170384.5.362.724.2044.839.svg 0.383 5.607 Graph Black and white original
A.ilium arsenide substrate wafer, formed by individualization from.he gallium arsenide, io k crystal according to claim 1. 1 1. A gallium arsenide substrate wafer, for m ed by individualization from the gallium arsenide single crystal according to claim 2.
1 8. A method employing a -:.lliumn arsenide substrate wafer according to claim 1 1, comprising g enerating radiation and passing the generated radiation I lu.ug the substrate wafer parallel to or perpendicular to ic wafer surface.
A gallium arsenide single crystal ~nmpi niing an electron concentration of at least lx 10" cm 3 and at most lx101 em3, w herein an optical absorption coefficient of ilL gallium arsenide single crystal is at most 2.0 cm -1 at a N, \ c k nIl of 1000 nm, at most 1.4 cm -1 at a wavelength of 1 100 nm and at most 0.8 cm-at a wavelength of 1200 nm, and wherein the area density of etch pitches on cross-sections perpendicular to 1he crystal axis does not exceed 1500 cm -2..end A hiciii iI_ _-cn eni iti n i, hl 1016 SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170383.20.366.1859.458.1909.svg 0.167 0.307 Graph Black and white
A gallium arsenide single crystal according to claim 2, wherein the area Atty. Dk t. No. 'o: 48-01 34 original
A gallium arsenide single crystal according to claim 2, wh ere in an EL 2- concentration is below 5x 10" cm -.
. canceled
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide substrate wafer
Materials described outside the worked examples.
gallium arsenide single crystal
GaAs
boron dopant
B
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical absorption coefficient at 1000 nm (claim 1 upper bound) | — | GaAs |
optical absorption coefficient at 1100 nm (claim 1 upper bound) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,815,392Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide single crystal, nipi i im: a charge carrier SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170383.7.367.778.2112.830.svg 0.173 5.817 Drawing Black and white coefficient of the:.1l liu n arsenide single crystal is at most 2.5 cm-at a v.. elen ih of 1000 nm, at most 1.8 c m at a wavelength of 1 100 n m and at most 1.0 cm-a t a wavelength of 1200 nm, [[and]] w herein the area density of etch pitches on cross-sections perpendicular to the crystal axis does not exceed 1500 cm,Ind A eI in l I '-,.lnii n 'i iI hel 's'. SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170383.12.365.1193.548.1244.svg 0.17 0.61 Graph Black and white
A gallium arsenide single crystal according to claim 1, comprising a charge carrier concentration of at most 5x10 1" cm3.
(O i i2i1n.l) A gallium arsenide single crystal according to claim 1, cnIepi ising an n-type conductivity, wherein the charge carrier concentration corresponds to the electron concentration.
A gallium arsenide single crystal according to claim 1, comprising a boron content of at least 5x10 1" cm3. -2- 4825-7128-3737 1 SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170384.2.362.391.2051.509.svg 0.393 5.63 Graph Black and white Att y. Dkt. No. 062248-0 134
(Ori g inal) A gallium arsenide single crystal according to claim 1, wherein the area SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170384.5.362.724.2044.839.svg 0.383 5.607 Graph Black and white original
A.ilium arsenide substrate wafer, formed by individualization from.he gallium arsenide, io k crystal according to claim 1. 1 1. A gallium arsenide substrate wafer, for m ed by individualization from the gallium arsenide single crystal according to claim 2.
1 8. A method employing a -:.lliumn arsenide substrate wafer according to claim 1 1, comprising g enerating radiation and passing the generated radiation I lu.ug the substrate wafer parallel to or perpendicular to ic wafer surface.
A gallium arsenide single crystal ~nmpi niing an electron concentration of at least lx 10" cm 3 and at most lx101 em3, w herein an optical absorption coefficient of ilL gallium arsenide single crystal is at most 2.0 cm -1 at a N, \ c k nIl of 1000 nm, at most 1.4 cm -1 at a wavelength of 1 100 nm and at most 0.8 cm-at a wavelength of 1200 nm, and wherein the area density of etch pitches on cross-sections perpendicular to 1he crystal axis does not exceed 1500 cm -2..end A hiciii iI_ _-cn eni iti n i, hl 1016 SVG 13672177.03-10-2014.HSM₄RAE₆PXXIFW3.CLM14170383.20.366.1859.458.1909.svg 0.167 0.307 Graph Black and white
A gallium arsenide single crystal according to claim 2, wherein the area Atty. Dk t. No. 'o: 48-01 34 original
A gallium arsenide single crystal according to claim 2, wh ere in an EL 2- concentration is below 5x 10" cm -.
. canceled
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide substrate wafer
Materials described outside the worked examples.
gallium arsenide single crystal
GaAs
boron dopant
B
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical absorption coefficient at 1000 nm (claim 1 upper bound) | — | GaAs |
optical absorption coefficient at 1100 nm (claim 1 upper bound) | — |
Related documents with shared materials, methods, properties, or citations.
optical absorption coefficient at 1200 nm (claim 1 upper bound) | — | GaAs |
optical absorption coefficient at 1000 nm (claim 2 upper bound) | — | GaAs |
optical absorption coefficient at 1100 nm (claim 2 upper bound) | — | GaAs |
optical absorption coefficient at 1200 nm (claim 2 upper bound) | — | GaAs |
area density of etch pitches on cross-sections perpendicular to crystal axis (claims 1 and 2 upper bound) | — | GaAs |
Thickness | ≤ 2.5 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 2 cm | — |
Thickness | ≤ 1.4 cm | — |
Thickness | ≤ 0.8 cm | — |
Multiphysics Modeling on Photoconductive Antennas for Terahertz Applications
optical absorption coefficient at 1200 nm (claim 1 upper bound) | — | GaAs |
optical absorption coefficient at 1000 nm (claim 2 upper bound) | — | GaAs |
optical absorption coefficient at 1100 nm (claim 2 upper bound) | — | GaAs |
optical absorption coefficient at 1200 nm (claim 2 upper bound) | — | GaAs |
area density of etch pitches on cross-sections perpendicular to crystal axis (claims 1 and 2 upper bound) | — | GaAs |
Thickness | ≤ 2.5 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 2 cm | — |
Thickness | ≤ 1.4 cm | — |
Thickness | ≤ 0.8 cm | — |
Multiphysics Modeling on Photoconductive Antennas for Terahertz Applications
optical absorption coefficient at 1200 nm (claim 1 upper bound) | — | GaAs |
optical absorption coefficient at 1000 nm (claim 2 upper bound) | — | GaAs |
optical absorption coefficient at 1100 nm (claim 2 upper bound) | — | GaAs |
optical absorption coefficient at 1200 nm (claim 2 upper bound) | — | GaAs |
area density of etch pitches on cross-sections perpendicular to crystal axis (claims 1 and 2 upper bound) | — | GaAs |
Thickness | ≤ 2.5 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 2 cm | — |
Thickness | ≤ 1.4 cm | — |
Thickness | ≤ 0.8 cm | — |
Multiphysics Modeling on Photoconductive Antennas for Terahertz Applications
optical absorption coefficient at 1200 nm (claim 1 upper bound) | — | GaAs |
optical absorption coefficient at 1000 nm (claim 2 upper bound) | — | GaAs |
optical absorption coefficient at 1100 nm (claim 2 upper bound) | — | GaAs |
optical absorption coefficient at 1200 nm (claim 2 upper bound) | — | GaAs |
area density of etch pitches on cross-sections perpendicular to crystal axis (claims 1 and 2 upper bound) | — | GaAs |
Thickness | ≤ 2.5 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 2 cm | — |
Thickness | ≤ 1.4 cm | — |
Thickness | ≤ 0.8 cm | — |
Multiphysics Modeling on Photoconductive Antennas for Terahertz Applications