Patent
Atlas literature
Patent
US 11,891,720 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a view schematically illustrating a configuration of an analysis system using X-ray photoelectron spectros- copy.
FIG. 2 is a graph illustrating an example of an As3d spectrum after base correction.
FIG. 3 is a flowchart illustrating a method for producing a GaAs single crystal substrate of an embodiment.
FIG. 4 is a view illustrating a cleaning apparatus accord- ing to a single wafer method.
FIG. 5 is a view illustrating nine measurement points set to a GaAs single crystal substrate having a diameter of 150 mm.
FIG. 6 is a view illustrating nine measurement points set on the GaAs single crystal substrate having the diameter of 200 mm.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide single crystal substrate having a main surface, wherein a ratio of a number of As atoms existing as diarsenic trioxide to a number of As atoms existing as diarsenic pentoxide is greater than or equal to 2 when the main surface is measured by X-ray photoelectron spectros-copy, in which an X-ray having an energy of 150 eV is used and a take-off angle of a photoelectron is set to 5°, and arithmetic average roughness Ra of the main surface is less than or equal to 0.3 nm.
The gallium arsenide single crystal substrate according to claim 1, wherein the ratio of the number of As atoms existing as the diarsenic trioxide to the number of As atoms existing as the diarsenic pentoxide is greater than or equal to 5 when the main surface is measured by the X-ray photoelectron spectroscopy.
The gallium arsenide single crystal substrate according to claim 1, wherein the main surface is a surface having an off angle greater than or equal to 0.01° and less than or equal to 15° with respect to a (100) plane.
The gallium arsenide single crystal substrate according to claims 1, wherein the gallium arsenide single crystal substrate has a disk shape having a diameter greater than or equal to 75 mm and less than or equal to 300 mm.
A gallium arsenide single crystal substrate having a main surface, wherein the gallium arsenide single crystal substrate has a disk shape having a diameter greater than or equal to 75 mm and less than or equal to 300 mm, when nine measurement points on the main surface are measured by X-ray photoelectron spectroscopy, in which an X-ray having an energy of 150 eV is used and a take-off angle of a photoelectron is set to 5°, an average value of a ratio of a number of As atoms existing as diarsenic trioxide to a number of As atoms existing as diarsenic pentoxide is greater than or equal to 2, and a standard deviation of the ratios is less than or equal to 1, when the diameter is set to D mm, and when two axes that pass through a center of the main surface and are orthogonal to each other on the main surface are set to an X-axis and a Y-axis, coordinates (X, Y) of the X-axis and the Y-axis of the nine measurement points are (0,0), (D/4,0), (0,D/4), (−D/4,0), (0,−D/4), ((D−40)/81/2, (D−40)/81/2), (−(D−40)/81/2, (D−40)/81/2), (−(D−40)/81/2, −(D−40)/81/2), and ((D−40)/81/2, −(D−40)/81/2), and an average value of arithmetic average roughness Ra at the nine measurement points is less than or equal to 0.3 nm.
A method for producing a gallium arsenide single crystal substrate, the method comprising: forming an oxide film on a main surface of a gallium arsenide single crystal substrate precursor by using at least one of an ozone gas and an ultraviolet ray while heating the gallium arsenide single crystal substrate precursor under a heating condition greater than or equal to 100° C. and less than or equal to 200° C.; and bringing the main surface into contact with an acidic aqueous solution to etch the oxide film.
The method for producing the gallium arsenide single crystal substrate according to claim 8, wherein the heating condition is greater than or equal to 150° C. and less than or equal to 200° C.
The method for producing the gallium arsenide single crystal substrate according to claim 8, wherein the acidic aqueous solution is a solution containing hydrofluoric acid.
The method for producing the gallium arsenide single crystal substrate according to claims 8, further comprising, after the etching the oxide film, measuring the main surface by X-ray photoelectron spectroscopy using an X-ray having energy of 150 eV and setting a take-off angle of a photoelectron to 5° to analyze a ratio of the number of As atoms existing as diarsenic trioxide to the number of As atoms existing as diarsenic pentoxide. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide single crystal substrate
Materials described outside the worked examples.
gallium arsenide single crystal substrate
GaAs
oxide film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ratio As2O3/As2O5 (As atoms, XPS) | ≥ 2 dimensionless | GaAs |
ratio As2O3/As2O5 (As atoms, XPS) — preferred | ≥ 5 dimensionless |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,891,720 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a view schematically illustrating a configuration of an analysis system using X-ray photoelectron spectros- copy.
FIG. 2 is a graph illustrating an example of an As3d spectrum after base correction.
FIG. 3 is a flowchart illustrating a method for producing a GaAs single crystal substrate of an embodiment.
FIG. 4 is a view illustrating a cleaning apparatus accord- ing to a single wafer method.
FIG. 5 is a view illustrating nine measurement points set to a GaAs single crystal substrate having a diameter of 150 mm.
FIG. 6 is a view illustrating nine measurement points set on the GaAs single crystal substrate having the diameter of 200 mm.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide single crystal substrate having a main surface, wherein a ratio of a number of As atoms existing as diarsenic trioxide to a number of As atoms existing as diarsenic pentoxide is greater than or equal to 2 when the main surface is measured by X-ray photoelectron spectros-copy, in which an X-ray having an energy of 150 eV is used and a take-off angle of a photoelectron is set to 5°, and arithmetic average roughness Ra of the main surface is less than or equal to 0.3 nm.
The gallium arsenide single crystal substrate according to claim 1, wherein the ratio of the number of As atoms existing as the diarsenic trioxide to the number of As atoms existing as the diarsenic pentoxide is greater than or equal to 5 when the main surface is measured by the X-ray photoelectron spectroscopy.
The gallium arsenide single crystal substrate according to claim 1, wherein the main surface is a surface having an off angle greater than or equal to 0.01° and less than or equal to 15° with respect to a (100) plane.
The gallium arsenide single crystal substrate according to claims 1, wherein the gallium arsenide single crystal substrate has a disk shape having a diameter greater than or equal to 75 mm and less than or equal to 300 mm.
A gallium arsenide single crystal substrate having a main surface, wherein the gallium arsenide single crystal substrate has a disk shape having a diameter greater than or equal to 75 mm and less than or equal to 300 mm, when nine measurement points on the main surface are measured by X-ray photoelectron spectroscopy, in which an X-ray having an energy of 150 eV is used and a take-off angle of a photoelectron is set to 5°, an average value of a ratio of a number of As atoms existing as diarsenic trioxide to a number of As atoms existing as diarsenic pentoxide is greater than or equal to 2, and a standard deviation of the ratios is less than or equal to 1, when the diameter is set to D mm, and when two axes that pass through a center of the main surface and are orthogonal to each other on the main surface are set to an X-axis and a Y-axis, coordinates (X, Y) of the X-axis and the Y-axis of the nine measurement points are (0,0), (D/4,0), (0,D/4), (−D/4,0), (0,−D/4), ((D−40)/81/2, (D−40)/81/2), (−(D−40)/81/2, (D−40)/81/2), (−(D−40)/81/2, −(D−40)/81/2), and ((D−40)/81/2, −(D−40)/81/2), and an average value of arithmetic average roughness Ra at the nine measurement points is less than or equal to 0.3 nm.
A method for producing a gallium arsenide single crystal substrate, the method comprising: forming an oxide film on a main surface of a gallium arsenide single crystal substrate precursor by using at least one of an ozone gas and an ultraviolet ray while heating the gallium arsenide single crystal substrate precursor under a heating condition greater than or equal to 100° C. and less than or equal to 200° C.; and bringing the main surface into contact with an acidic aqueous solution to etch the oxide film.
The method for producing the gallium arsenide single crystal substrate according to claim 8, wherein the heating condition is greater than or equal to 150° C. and less than or equal to 200° C.
The method for producing the gallium arsenide single crystal substrate according to claim 8, wherein the acidic aqueous solution is a solution containing hydrofluoric acid.
The method for producing the gallium arsenide single crystal substrate according to claims 8, further comprising, after the etching the oxide film, measuring the main surface by X-ray photoelectron spectroscopy using an X-ray having energy of 150 eV and setting a take-off angle of a photoelectron to 5° to analyze a ratio of the number of As atoms existing as diarsenic trioxide to the number of As atoms existing as diarsenic pentoxide. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide single crystal substrate
Materials described outside the worked examples.
gallium arsenide single crystal substrate
GaAs
oxide film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ratio As2O3/As2O5 (As atoms, XPS) | ≥ 2 dimensionless | GaAs |
ratio As2O3/As2O5 (As atoms, XPS) — preferred | ≥ 5 dimensionless |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,891,720 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a view schematically illustrating a configuration of an analysis system using X-ray photoelectron spectros- copy.
FIG. 2 is a graph illustrating an example of an As3d spectrum after base correction.
FIG. 3 is a flowchart illustrating a method for producing a GaAs single crystal substrate of an embodiment.
FIG. 4 is a view illustrating a cleaning apparatus accord- ing to a single wafer method.
FIG. 5 is a view illustrating nine measurement points set to a GaAs single crystal substrate having a diameter of 150 mm.
FIG. 6 is a view illustrating nine measurement points set on the GaAs single crystal substrate having the diameter of 200 mm.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide single crystal substrate having a main surface, wherein a ratio of a number of As atoms existing as diarsenic trioxide to a number of As atoms existing as diarsenic pentoxide is greater than or equal to 2 when the main surface is measured by X-ray photoelectron spectros-copy, in which an X-ray having an energy of 150 eV is used and a take-off angle of a photoelectron is set to 5°, and arithmetic average roughness Ra of the main surface is less than or equal to 0.3 nm.
The gallium arsenide single crystal substrate according to claim 1, wherein the ratio of the number of As atoms existing as the diarsenic trioxide to the number of As atoms existing as the diarsenic pentoxide is greater than or equal to 5 when the main surface is measured by the X-ray photoelectron spectroscopy.
The gallium arsenide single crystal substrate according to claim 1, wherein the main surface is a surface having an off angle greater than or equal to 0.01° and less than or equal to 15° with respect to a (100) plane.
The gallium arsenide single crystal substrate according to claims 1, wherein the gallium arsenide single crystal substrate has a disk shape having a diameter greater than or equal to 75 mm and less than or equal to 300 mm.
A gallium arsenide single crystal substrate having a main surface, wherein the gallium arsenide single crystal substrate has a disk shape having a diameter greater than or equal to 75 mm and less than or equal to 300 mm, when nine measurement points on the main surface are measured by X-ray photoelectron spectroscopy, in which an X-ray having an energy of 150 eV is used and a take-off angle of a photoelectron is set to 5°, an average value of a ratio of a number of As atoms existing as diarsenic trioxide to a number of As atoms existing as diarsenic pentoxide is greater than or equal to 2, and a standard deviation of the ratios is less than or equal to 1, when the diameter is set to D mm, and when two axes that pass through a center of the main surface and are orthogonal to each other on the main surface are set to an X-axis and a Y-axis, coordinates (X, Y) of the X-axis and the Y-axis of the nine measurement points are (0,0), (D/4,0), (0,D/4), (−D/4,0), (0,−D/4), ((D−40)/81/2, (D−40)/81/2), (−(D−40)/81/2, (D−40)/81/2), (−(D−40)/81/2, −(D−40)/81/2), and ((D−40)/81/2, −(D−40)/81/2), and an average value of arithmetic average roughness Ra at the nine measurement points is less than or equal to 0.3 nm.
A method for producing a gallium arsenide single crystal substrate, the method comprising: forming an oxide film on a main surface of a gallium arsenide single crystal substrate precursor by using at least one of an ozone gas and an ultraviolet ray while heating the gallium arsenide single crystal substrate precursor under a heating condition greater than or equal to 100° C. and less than or equal to 200° C.; and bringing the main surface into contact with an acidic aqueous solution to etch the oxide film.
The method for producing the gallium arsenide single crystal substrate according to claim 8, wherein the heating condition is greater than or equal to 150° C. and less than or equal to 200° C.
The method for producing the gallium arsenide single crystal substrate according to claim 8, wherein the acidic aqueous solution is a solution containing hydrofluoric acid.
The method for producing the gallium arsenide single crystal substrate according to claims 8, further comprising, after the etching the oxide film, measuring the main surface by X-ray photoelectron spectroscopy using an X-ray having energy of 150 eV and setting a take-off angle of a photoelectron to 5° to analyze a ratio of the number of As atoms existing as diarsenic trioxide to the number of As atoms existing as diarsenic pentoxide. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide single crystal substrate
Materials described outside the worked examples.
gallium arsenide single crystal substrate
GaAs
oxide film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ratio As2O3/As2O5 (As atoms, XPS) | ≥ 2 dimensionless | GaAs |
ratio As2O3/As2O5 (As atoms, XPS) — preferred | ≥ 5 dimensionless |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,891,720 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a view schematically illustrating a configuration of an analysis system using X-ray photoelectron spectros- copy.
FIG. 2 is a graph illustrating an example of an As3d spectrum after base correction.
FIG. 3 is a flowchart illustrating a method for producing a GaAs single crystal substrate of an embodiment.
FIG. 4 is a view illustrating a cleaning apparatus accord- ing to a single wafer method.
FIG. 5 is a view illustrating nine measurement points set to a GaAs single crystal substrate having a diameter of 150 mm.
FIG. 6 is a view illustrating nine measurement points set on the GaAs single crystal substrate having the diameter of 200 mm.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide single crystal substrate having a main surface, wherein a ratio of a number of As atoms existing as diarsenic trioxide to a number of As atoms existing as diarsenic pentoxide is greater than or equal to 2 when the main surface is measured by X-ray photoelectron spectros-copy, in which an X-ray having an energy of 150 eV is used and a take-off angle of a photoelectron is set to 5°, and arithmetic average roughness Ra of the main surface is less than or equal to 0.3 nm.
The gallium arsenide single crystal substrate according to claim 1, wherein the ratio of the number of As atoms existing as the diarsenic trioxide to the number of As atoms existing as the diarsenic pentoxide is greater than or equal to 5 when the main surface is measured by the X-ray photoelectron spectroscopy.
The gallium arsenide single crystal substrate according to claim 1, wherein the main surface is a surface having an off angle greater than or equal to 0.01° and less than or equal to 15° with respect to a (100) plane.
The gallium arsenide single crystal substrate according to claims 1, wherein the gallium arsenide single crystal substrate has a disk shape having a diameter greater than or equal to 75 mm and less than or equal to 300 mm.
A gallium arsenide single crystal substrate having a main surface, wherein the gallium arsenide single crystal substrate has a disk shape having a diameter greater than or equal to 75 mm and less than or equal to 300 mm, when nine measurement points on the main surface are measured by X-ray photoelectron spectroscopy, in which an X-ray having an energy of 150 eV is used and a take-off angle of a photoelectron is set to 5°, an average value of a ratio of a number of As atoms existing as diarsenic trioxide to a number of As atoms existing as diarsenic pentoxide is greater than or equal to 2, and a standard deviation of the ratios is less than or equal to 1, when the diameter is set to D mm, and when two axes that pass through a center of the main surface and are orthogonal to each other on the main surface are set to an X-axis and a Y-axis, coordinates (X, Y) of the X-axis and the Y-axis of the nine measurement points are (0,0), (D/4,0), (0,D/4), (−D/4,0), (0,−D/4), ((D−40)/81/2, (D−40)/81/2), (−(D−40)/81/2, (D−40)/81/2), (−(D−40)/81/2, −(D−40)/81/2), and ((D−40)/81/2, −(D−40)/81/2), and an average value of arithmetic average roughness Ra at the nine measurement points is less than or equal to 0.3 nm.
A method for producing a gallium arsenide single crystal substrate, the method comprising: forming an oxide film on a main surface of a gallium arsenide single crystal substrate precursor by using at least one of an ozone gas and an ultraviolet ray while heating the gallium arsenide single crystal substrate precursor under a heating condition greater than or equal to 100° C. and less than or equal to 200° C.; and bringing the main surface into contact with an acidic aqueous solution to etch the oxide film.
The method for producing the gallium arsenide single crystal substrate according to claim 8, wherein the heating condition is greater than or equal to 150° C. and less than or equal to 200° C.
The method for producing the gallium arsenide single crystal substrate according to claim 8, wherein the acidic aqueous solution is a solution containing hydrofluoric acid.
The method for producing the gallium arsenide single crystal substrate according to claims 8, further comprising, after the etching the oxide film, measuring the main surface by X-ray photoelectron spectroscopy using an X-ray having energy of 150 eV and setting a take-off angle of a photoelectron to 5° to analyze a ratio of the number of As atoms existing as diarsenic trioxide to the number of As atoms existing as diarsenic pentoxide. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide single crystal substrate
Materials described outside the worked examples.
gallium arsenide single crystal substrate
GaAs
oxide film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ratio As2O3/As2O5 (As atoms, XPS) | ≥ 2 dimensionless | GaAs |
ratio As2O3/As2O5 (As atoms, XPS) — preferred | ≥ 5 dimensionless |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
ozone gas or ultraviolet ray oxidant
hydrofluoric acid solution
HF (aq)
diarsenic trioxide
As₂O₃
diarsenic pentoxide
As₂O₅
arithmetic average roughness Ra of main surface | ≤ 0.3 nm | GaAs |
standard deviation of As2O3/As2O5 ratio across nine measurement points | ≤ 1 dimensionless | GaAs |
— | 37–52 eV | — |
— | 41–47 eV | — |
Thickness | 0.5–10 µm | — |
Thickness | 1–5 µm | — |
Thickness | 220–480 nm | — |
Pressure | ≤ 1 pa | — |
Temperature | ≥ 1 °C | — |
Thickness | ≥ 0.3 nm | — |
Cited non-patent literature · 4
Multiphysics Modeling on Photoconductive Antennas for Terahertz Applications
ozone gas or ultraviolet ray oxidant
hydrofluoric acid solution
HF (aq)
diarsenic trioxide
As₂O₃
diarsenic pentoxide
As₂O₅
arithmetic average roughness Ra of main surface | ≤ 0.3 nm | GaAs |
standard deviation of As2O3/As2O5 ratio across nine measurement points | ≤ 1 dimensionless | GaAs |
— | 37–52 eV | — |
— | 41–47 eV | — |
Thickness | 0.5–10 µm | — |
Thickness | 1–5 µm | — |
Thickness | 220–480 nm | — |
Pressure | ≤ 1 pa | — |
Temperature | ≥ 1 °C | — |
Thickness | ≥ 0.3 nm | — |
Cited non-patent literature · 4
Multiphysics Modeling on Photoconductive Antennas for Terahertz Applications
ozone gas or ultraviolet ray oxidant
hydrofluoric acid solution
HF (aq)
diarsenic trioxide
As₂O₃
diarsenic pentoxide
As₂O₅
arithmetic average roughness Ra of main surface | ≤ 0.3 nm | GaAs |
standard deviation of As2O3/As2O5 ratio across nine measurement points | ≤ 1 dimensionless | GaAs |
— | 37–52 eV | — |
— | 41–47 eV | — |
Thickness | 0.5–10 µm | — |
Thickness | 1–5 µm | — |
Thickness | 220–480 nm | — |
Pressure | ≤ 1 pa | — |
Temperature | ≥ 1 °C | — |
Thickness | ≥ 0.3 nm | — |
Cited non-patent literature · 4
Multiphysics Modeling on Photoconductive Antennas for Terahertz Applications
ozone gas or ultraviolet ray oxidant
hydrofluoric acid solution
HF (aq)
diarsenic trioxide
As₂O₃
diarsenic pentoxide
As₂O₅
arithmetic average roughness Ra of main surface | ≤ 0.3 nm | GaAs |
standard deviation of As2O3/As2O5 ratio across nine measurement points | ≤ 1 dimensionless | GaAs |
— | 37–52 eV | — |
— | 41–47 eV | — |
Thickness | 0.5–10 µm | — |
Thickness | 1–5 µm | — |
Thickness | 220–480 nm | — |
Pressure | ≤ 1 pa | — |
Temperature | ≥ 1 °C | — |
Thickness | ≥ 0.3 nm | — |
Cited non-patent literature · 4
Multiphysics Modeling on Photoconductive Antennas for Terahertz Applications
