Patent
US 10,829,867OF INVENTION
Keisuke TANIZAKI
US
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Patent
Atlas literature
Patent
US 10,829,867Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-3 Canceled
Canceled
A GaAs crystal having Ax(2) n o t greater than 30 c m-1 which is expressed in an expression 2 below, w here Xk represents a Ra m an shift of a second peak attributed to oscillation of a transverse optical phonon of Ga A s in a Raman spectrum measured at a k th p o int in measurement of Raman spectra at t points in at least one plane of a (011) plane and a plane equivalent to the (011) p lane, xBL represents a Raman shift of an emission line peak of neon, and k and t are each a natural number greater than 0 SVG 16360576.03-21-2019.JTPPXYXHLXEAPX5.CLM.1.svg 0.47 3 Black and white Original
The GaAs crystal according to claim 4, wherein an average valu e of a full w idth at half maxim um of the second peak is not greater than 30 cm- Original
The GaAs crystal according to claim 4 [[or 5]], the GaAs crystal being an n-ty p e GaAs crystal. Currently amended
(New): The GaAs crystal according to claim 4, the GaAs crystal having a diameter n o t smaller than 101.6 mm, 11758F1$O.1 New
Canceled
Materials described outside the worked examples.
GaAs crystal
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Ax(2)-standard deviation of Raman shift of TO phonon peak relative to neon emission line | ≤ 30 cm⁻¹ | GaAs |
Average FWHM of second peak (TO phonon) | ≤ 30 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,829,867Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-3 Canceled
Canceled
A GaAs crystal having Ax(2) n o t greater than 30 c m-1 which is expressed in an expression 2 below, w here Xk represents a Ra m an shift of a second peak attributed to oscillation of a transverse optical phonon of Ga A s in a Raman spectrum measured at a k th p o int in measurement of Raman spectra at t points in at least one plane of a (011) plane and a plane equivalent to the (011) p lane, xBL represents a Raman shift of an emission line peak of neon, and k and t are each a natural number greater than 0 SVG 16360576.03-21-2019.JTPPXYXHLXEAPX5.CLM.1.svg 0.47 3 Black and white Original
The GaAs crystal according to claim 4, wherein an average valu e of a full w idth at half maxim um of the second peak is not greater than 30 cm- Original
The GaAs crystal according to claim 4 [[or 5]], the GaAs crystal being an n-ty p e GaAs crystal. Currently amended
(New): The GaAs crystal according to claim 4, the GaAs crystal having a diameter n o t smaller than 101.6 mm, 11758F1$O.1 New
Canceled
Materials described outside the worked examples.
GaAs crystal
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Ax(2)-standard deviation of Raman shift of TO phonon peak relative to neon emission line | ≤ 30 cm⁻¹ | GaAs |
Average FWHM of second peak (TO phonon) | ≤ 30 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,829,867Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-3 Canceled
Canceled
A GaAs crystal having Ax(2) n o t greater than 30 c m-1 which is expressed in an expression 2 below, w here Xk represents a Ra m an shift of a second peak attributed to oscillation of a transverse optical phonon of Ga A s in a Raman spectrum measured at a k th p o int in measurement of Raman spectra at t points in at least one plane of a (011) plane and a plane equivalent to the (011) p lane, xBL represents a Raman shift of an emission line peak of neon, and k and t are each a natural number greater than 0 SVG 16360576.03-21-2019.JTPPXYXHLXEAPX5.CLM.1.svg 0.47 3 Black and white Original
The GaAs crystal according to claim 4, wherein an average valu e of a full w idth at half maxim um of the second peak is not greater than 30 cm- Original
The GaAs crystal according to claim 4 [[or 5]], the GaAs crystal being an n-ty p e GaAs crystal. Currently amended
(New): The GaAs crystal according to claim 4, the GaAs crystal having a diameter n o t smaller than 101.6 mm, 11758F1$O.1 New
Canceled
Materials described outside the worked examples.
GaAs crystal
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Ax(2)-standard deviation of Raman shift of TO phonon peak relative to neon emission line | ≤ 30 cm⁻¹ | GaAs |
Average FWHM of second peak (TO phonon) | ≤ 30 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,829,867Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-3 Canceled
Canceled
A GaAs crystal having Ax(2) n o t greater than 30 c m-1 which is expressed in an expression 2 below, w here Xk represents a Ra m an shift of a second peak attributed to oscillation of a transverse optical phonon of Ga A s in a Raman spectrum measured at a k th p o int in measurement of Raman spectra at t points in at least one plane of a (011) plane and a plane equivalent to the (011) p lane, xBL represents a Raman shift of an emission line peak of neon, and k and t are each a natural number greater than 0 SVG 16360576.03-21-2019.JTPPXYXHLXEAPX5.CLM.1.svg 0.47 3 Black and white Original
The GaAs crystal according to claim 4, wherein an average valu e of a full w idth at half maxim um of the second peak is not greater than 30 cm- Original
The GaAs crystal according to claim 4 [[or 5]], the GaAs crystal being an n-ty p e GaAs crystal. Currently amended
(New): The GaAs crystal according to claim 4, the GaAs crystal having a diameter n o t smaller than 101.6 mm, 11758F1$O.1 New
Canceled
Materials described outside the worked examples.
GaAs crystal
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Ax(2)-standard deviation of Raman shift of TO phonon peak relative to neon emission line | ≤ 30 cm⁻¹ | GaAs |
Average FWHM of second peak (TO phonon) | ≤ 30 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
Ax(1)-standard deviation of Raman shift of LO phonon peak relative to neon emission line | ≤ 20 cm⁻¹ | GaAs |
Average FWHM of first peak (LO phonon) | ≤ 5 cm⁻¹ | GaAs |
Carrier concentration of semi-insulating GaAs crystal | ≤ 10000000 cm⁻³ | GaAs |
n-type dopant concentration of n-type GaAs crystal | ≥ 1000000000000000 cm⁻³ | GaAs |
GaAs crystal diameter | ≥ 101.6 mm | GaAs |
Thickness | ≥ 30 cm | — |
Temperature | 970–1100 °C | — |
Thickness | 0.05–30 cm | — |
Temperature | 430–560 °C | — |
Thickness | 0.05–80 cm | — |
Thickness | ≤ 0.05 cm | — |
Thickness | ≥ 20 cm | — |
Thickness | ≥ 5 cm | — |
Thickness | ≥ 10 cm | — |
PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT
Ax(1)-standard deviation of Raman shift of LO phonon peak relative to neon emission line | ≤ 20 cm⁻¹ | GaAs |
Average FWHM of first peak (LO phonon) | ≤ 5 cm⁻¹ | GaAs |
Carrier concentration of semi-insulating GaAs crystal | ≤ 10000000 cm⁻³ | GaAs |
n-type dopant concentration of n-type GaAs crystal | ≥ 1000000000000000 cm⁻³ | GaAs |
GaAs crystal diameter | ≥ 101.6 mm | GaAs |
Thickness | ≥ 30 cm | — |
Temperature | 970–1100 °C | — |
Thickness | 0.05–30 cm | — |
Temperature | 430–560 °C | — |
Thickness | 0.05–80 cm | — |
Thickness | ≤ 0.05 cm | — |
Thickness | ≥ 20 cm | — |
Thickness | ≥ 5 cm | — |
Thickness | ≥ 10 cm | — |
PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT
Ax(1)-standard deviation of Raman shift of LO phonon peak relative to neon emission line | ≤ 20 cm⁻¹ | GaAs |
Average FWHM of first peak (LO phonon) | ≤ 5 cm⁻¹ | GaAs |
Carrier concentration of semi-insulating GaAs crystal | ≤ 10000000 cm⁻³ | GaAs |
n-type dopant concentration of n-type GaAs crystal | ≥ 1000000000000000 cm⁻³ | GaAs |
GaAs crystal diameter | ≥ 101.6 mm | GaAs |
Thickness | ≥ 30 cm | — |
Temperature | 970–1100 °C | — |
Thickness | 0.05–30 cm | — |
Temperature | 430–560 °C | — |
Thickness | 0.05–80 cm | — |
Thickness | ≤ 0.05 cm | — |
Thickness | ≥ 20 cm | — |
Thickness | ≥ 5 cm | — |
Thickness | ≥ 10 cm | — |
PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT
Ax(1)-standard deviation of Raman shift of LO phonon peak relative to neon emission line | ≤ 20 cm⁻¹ | GaAs |
Average FWHM of first peak (LO phonon) | ≤ 5 cm⁻¹ | GaAs |
Carrier concentration of semi-insulating GaAs crystal | ≤ 10000000 cm⁻³ | GaAs |
n-type dopant concentration of n-type GaAs crystal | ≥ 1000000000000000 cm⁻³ | GaAs |
GaAs crystal diameter | ≥ 101.6 mm | GaAs |
Thickness | ≥ 30 cm | — |
Temperature | 970–1100 °C | — |
Thickness | 0.05–30 cm | — |
Temperature | 430–560 °C | — |
Thickness | 0.05–80 cm | — |
Thickness | ≤ 0.05 cm | — |
Thickness | ≥ 20 cm | — |
Thickness | ≥ 5 cm | — |
Thickness | ≥ 10 cm | — |
PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT