Patent
US 10,995,422OF INVENTION
Shinya FUJIWARA
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,995,422Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaAs substrate having a first surface, wherein a sum of a number of particles having a longer diameter of more than or equal to 0.16 m which are present in the first surface, per cm 2 of the first surface, and a number of damages having a longer diameter of more than or equal to 0.16 m which are present in a second surface, per cm 2 of the second surface, is less than or equal to 1.63, the second surface being formed by etching the first surface by 0.5 m in a depth direction, wherein the longer diameter of the particle refers to a distance between two points separated most in an outer circumference of the particle, and the damages refer to faults. Previously presented
The GaAs substrate according to claim 1, wherein the GaAs substrate has an A lxGai-x As film on the first surface, the A lxGai-x As film has a thickness of 0.5 to 6 m, and a number of LPDs having a longer diameter of more than or equal to 18 m which are present in a surface of the A lxGai-x As film, per cm 2 of the surface, is less than or equal to 49.2, SVG 16334072.12-03-2020.KIAO₅₂₅₉LDFLYX5.CLM.1.svg 0.14 2.13 Black and white the LPDs refer to light point defects. Previously presented
The GaAs substrate according to claim 1, wherein the GaAs substrate has a disk shape having a diameter of more than or equal to 2 inches and less than or equal to 8 inches. Previously presented
A method for manufacturing a GaAs substrate having a cleaning step for obtaining the GaAs substrate from a GaAs substrate precursor, the cleaning step including a first step of cleaning the GaAs substrate precursor by applying ultrasound to the GaAs substrate precursor in an alkaline solution, and a second step of cleaning the GaAs substrate precursor by applying the ultrasound to the GaAs substrate precursor in an acid solution, the first step including an operation of continuously changing a frequency of the ultrasound step including an operation of continuously changing 900 kHz to 2 MHz. Withdrawn
The method for manufacturing the GaAs substrate ultrasound has a sound pressure of 60 to 80 mV. at least from 900 kHz to 2 MHz, the second the frequency of the ultrasound at least from according to claim 4, wherein the Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaAs substrate with epitaxial film
Materials described outside the worked examples.
GaAs
AlxGa₁-xAs
alkaline solution
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Sum of surface particle density (≥0.16 μm, first surface) and damage density (≥0.16 μm, second surface after 0.5 μm etch) | ≤ 1.63 per cm2 | GaAs |
LPD density (≥18 μm longer diameter) in AlxGa1-xAs film surface | ≤ 49.2 per cm2 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,995,422Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaAs substrate having a first surface, wherein a sum of a number of particles having a longer diameter of more than or equal to 0.16 m which are present in the first surface, per cm 2 of the first surface, and a number of damages having a longer diameter of more than or equal to 0.16 m which are present in a second surface, per cm 2 of the second surface, is less than or equal to 1.63, the second surface being formed by etching the first surface by 0.5 m in a depth direction, wherein the longer diameter of the particle refers to a distance between two points separated most in an outer circumference of the particle, and the damages refer to faults. Previously presented
The GaAs substrate according to claim 1, wherein the GaAs substrate has an A lxGai-x As film on the first surface, the A lxGai-x As film has a thickness of 0.5 to 6 m, and a number of LPDs having a longer diameter of more than or equal to 18 m which are present in a surface of the A lxGai-x As film, per cm 2 of the surface, is less than or equal to 49.2, SVG 16334072.12-03-2020.KIAO₅₂₅₉LDFLYX5.CLM.1.svg 0.14 2.13 Black and white the LPDs refer to light point defects. Previously presented
The GaAs substrate according to claim 1, wherein the GaAs substrate has a disk shape having a diameter of more than or equal to 2 inches and less than or equal to 8 inches. Previously presented
A method for manufacturing a GaAs substrate having a cleaning step for obtaining the GaAs substrate from a GaAs substrate precursor, the cleaning step including a first step of cleaning the GaAs substrate precursor by applying ultrasound to the GaAs substrate precursor in an alkaline solution, and a second step of cleaning the GaAs substrate precursor by applying the ultrasound to the GaAs substrate precursor in an acid solution, the first step including an operation of continuously changing a frequency of the ultrasound step including an operation of continuously changing 900 kHz to 2 MHz. Withdrawn
The method for manufacturing the GaAs substrate ultrasound has a sound pressure of 60 to 80 mV. at least from 900 kHz to 2 MHz, the second the frequency of the ultrasound at least from according to claim 4, wherein the Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaAs substrate with epitaxial film
Materials described outside the worked examples.
GaAs
AlxGa₁-xAs
alkaline solution
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Sum of surface particle density (≥0.16 μm, first surface) and damage density (≥0.16 μm, second surface after 0.5 μm etch) | ≤ 1.63 per cm2 | GaAs |
LPD density (≥18 μm longer diameter) in AlxGa1-xAs film surface | ≤ 49.2 per cm2 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,995,422Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaAs substrate having a first surface, wherein a sum of a number of particles having a longer diameter of more than or equal to 0.16 m which are present in the first surface, per cm 2 of the first surface, and a number of damages having a longer diameter of more than or equal to 0.16 m which are present in a second surface, per cm 2 of the second surface, is less than or equal to 1.63, the second surface being formed by etching the first surface by 0.5 m in a depth direction, wherein the longer diameter of the particle refers to a distance between two points separated most in an outer circumference of the particle, and the damages refer to faults. Previously presented
The GaAs substrate according to claim 1, wherein the GaAs substrate has an A lxGai-x As film on the first surface, the A lxGai-x As film has a thickness of 0.5 to 6 m, and a number of LPDs having a longer diameter of more than or equal to 18 m which are present in a surface of the A lxGai-x As film, per cm 2 of the surface, is less than or equal to 49.2, SVG 16334072.12-03-2020.KIAO₅₂₅₉LDFLYX5.CLM.1.svg 0.14 2.13 Black and white the LPDs refer to light point defects. Previously presented
The GaAs substrate according to claim 1, wherein the GaAs substrate has a disk shape having a diameter of more than or equal to 2 inches and less than or equal to 8 inches. Previously presented
A method for manufacturing a GaAs substrate having a cleaning step for obtaining the GaAs substrate from a GaAs substrate precursor, the cleaning step including a first step of cleaning the GaAs substrate precursor by applying ultrasound to the GaAs substrate precursor in an alkaline solution, and a second step of cleaning the GaAs substrate precursor by applying the ultrasound to the GaAs substrate precursor in an acid solution, the first step including an operation of continuously changing a frequency of the ultrasound step including an operation of continuously changing 900 kHz to 2 MHz. Withdrawn
The method for manufacturing the GaAs substrate ultrasound has a sound pressure of 60 to 80 mV. at least from 900 kHz to 2 MHz, the second the frequency of the ultrasound at least from according to claim 4, wherein the Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaAs substrate with epitaxial film
Materials described outside the worked examples.
GaAs
AlxGa₁-xAs
alkaline solution
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Sum of surface particle density (≥0.16 μm, first surface) and damage density (≥0.16 μm, second surface after 0.5 μm etch) | ≤ 1.63 per cm2 | GaAs |
LPD density (≥18 μm longer diameter) in AlxGa1-xAs film surface | ≤ 49.2 per cm2 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,995,422Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaAs substrate having a first surface, wherein a sum of a number of particles having a longer diameter of more than or equal to 0.16 m which are present in the first surface, per cm 2 of the first surface, and a number of damages having a longer diameter of more than or equal to 0.16 m which are present in a second surface, per cm 2 of the second surface, is less than or equal to 1.63, the second surface being formed by etching the first surface by 0.5 m in a depth direction, wherein the longer diameter of the particle refers to a distance between two points separated most in an outer circumference of the particle, and the damages refer to faults. Previously presented
The GaAs substrate according to claim 1, wherein the GaAs substrate has an A lxGai-x As film on the first surface, the A lxGai-x As film has a thickness of 0.5 to 6 m, and a number of LPDs having a longer diameter of more than or equal to 18 m which are present in a surface of the A lxGai-x As film, per cm 2 of the surface, is less than or equal to 49.2, SVG 16334072.12-03-2020.KIAO₅₂₅₉LDFLYX5.CLM.1.svg 0.14 2.13 Black and white the LPDs refer to light point defects. Previously presented
The GaAs substrate according to claim 1, wherein the GaAs substrate has a disk shape having a diameter of more than or equal to 2 inches and less than or equal to 8 inches. Previously presented
A method for manufacturing a GaAs substrate having a cleaning step for obtaining the GaAs substrate from a GaAs substrate precursor, the cleaning step including a first step of cleaning the GaAs substrate precursor by applying ultrasound to the GaAs substrate precursor in an alkaline solution, and a second step of cleaning the GaAs substrate precursor by applying the ultrasound to the GaAs substrate precursor in an acid solution, the first step including an operation of continuously changing a frequency of the ultrasound step including an operation of continuously changing 900 kHz to 2 MHz. Withdrawn
The method for manufacturing the GaAs substrate ultrasound has a sound pressure of 60 to 80 mV. at least from 900 kHz to 2 MHz, the second the frequency of the ultrasound at least from according to claim 4, wherein the Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaAs substrate with epitaxial film
Materials described outside the worked examples.
GaAs
AlxGa₁-xAs
alkaline solution
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Sum of surface particle density (≥0.16 μm, first surface) and damage density (≥0.16 μm, second surface after 0.5 μm etch) | ≤ 1.63 per cm2 | GaAs |
LPD density (≥18 μm longer diameter) in AlxGa1-xAs film surface | ≤ 49.2 per cm2 |
Related documents with shared materials, methods, properties, or citations.
acid solution
AlxGa₁-xAs |
Duration | 25–45 seconds | — |
Duration | 15–30 seconds | — |
Temperature | ≤ 800 k | — |
PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT
acid solution
AlxGa₁-xAs |
Duration | 25–45 seconds | — |
Duration | 15–30 seconds | — |
Temperature | ≤ 800 k | — |
PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT
acid solution
AlxGa₁-xAs |
Duration | 25–45 seconds | — |
Duration | 15–30 seconds | — |
Temperature | ≤ 800 k | — |
PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT
acid solution
AlxGa₁-xAs |
Duration | 25–45 seconds | — |
Duration | 15–30 seconds | — |
Temperature | ≤ 800 k | — |
PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT