Research paper
Computational MultiscaleTheoretical| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Radiation Intensity Enhancement | THz radiation intensity at 1 THz | 4.2dB | — |
PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Radiation Intensity Enhancement | THz radiation intensity at 1 THz | 4.2dB | — |
PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Radiation Intensity Enhancement | THz radiation intensity at 1 THz | 4.2dB | — |
PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Radiation Intensity Enhancement | THz radiation intensity at 1 THz | 4.2dB | — |
PROCESS FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS HAVING LOW OPTICAL ABSORPTION COEFFICIENT