A semiconductor device including a GaN-based compound semiconductor stacked layer (GaN-based stacked layer) including a first conductivity-type drift layer, a second conductivity-type barrier layer located on the first conductivity-type drift layer, and a first conductivity-type contact layer located on the second conductivity-type barrier layer, the GaN-based stacked layer having an opening that extends from the first conductivity-type contact layer and reaches the first conductivity-type drift layer through the second conductivity-type barrier layer, the semiconductor device comprising: a regrown layer located so as to cover a portion of the GaN-based stacked layer that is exposed to the opening, the regrown layer including a channel layer composed of a GaN-based semiconductor and a carrier supply layer that supplies carriers to the channel layer; an insulating layer located so as to cover the regrown layer; a source electrode located on the GaN-based stacked layer; a gate electrode located on the insulating layer; and a drain electrode located on any one of first conductivity-type regions that are present opposite the first conductivity-type contact layer with a bottom of the opening located therebetween, wherein, in the second conductivity-type barrier layer, a second conductivity-type impurity concentration A (cm -3) and a hydrogen concentration B (cm⁻³) satisfy 0.1 < B/A < 0.9z wherein the first conductivity-type contact layer is located between the second conductivity-type barrier layer and the source electrode. 2 SVG 13822591.09-17-2014.I07DQ₅ROPXXIFW3.CLM₃3432851.1.292.387.2182.470.svg 0.277 6.3 Chemistry Black and white

A method for producing a semiconductor device including a GaN-based compound semiconductor stacked layer (GaN-based stacked layer) including a first conductivity-type drift layer, a second conductivity-type barrier layer located on the first conductivity-type drift layer, and a first conductivity-type contact layer located on the second conductivity-type barrier layer, the method comprising a step of forming an opening in the GaN- based stacked layer by reactive ion etching (RIE) so that the opening extends from the first conductivity-type contact layer and reaches the first conductivity-type drift layer through the second conductivity-type barrier layer; 4 SVG 13822591.09-17-2014.I07DQ₅ROPXXIFW3.CLM₃3432853.1.292.387.2182.470.svg 0.277 6.3 Chemistry Black and white a step of forming a regrown layer so as to cover a portion of the GaN-based stacked layer that is exposed to the opening, the regrown layer including a channel layer composed of a GaN-based semiconductor and a carrier supply layer that supplies carriers to the channel layer; a step of forming an insulating layer so as to cover the regrown layer; and a step of forming a source electrode on the GaN-based stacked layer, forming a gate electrode on the insulating layer, and forming a drain electrode on any one of first conductivity-type regions that are present opposite the first conductivity-type contact layer with a bottom of the opening located therebetween, wherein, in formation of the second conductivity-type barrier layer, a second conductivity-type impurity concentration A (cm⁻³) and a hydrogen concentration B (cm⁻³) satisfy 0.1 < B/A < 0.9 1 wherein the first conductivity-type contact layer is located between the second conductivity-type barrier layer and the source electrode.

A semiconductor device including a GaN-based compound semiconductor stacked layer (GaN-based stacked layer) including a first conductivity-type drift layer, a second conductivity-type barrier layer located on the first conductivity-type drift layer, and a first conductivity-type contact layer located on the second conductivity-type barrier layer, the GaN-based stacked layer having an opening that extends from the first conductivity-type contact layer and reaches the first conductivity-type drift layer through the second conductivity-type barrier layer, the semiconductor device comprising: a regrown layer located so as to cover a portion of the GaN-based stacked layer that is exposed to the opening, the regrown layer including a channel layer composed of a GaN-based semiconductor and a carrier supply layer that supplies carriers to the channel layer; an insulating layer located so as to cover the regrown layer; a source electrode located on the GaN-based stacked layer; a gate electrode located on the insulating layer; and a drain electrode located on any one of first conductivity-type regions that are present opposite the first conductivity-type contact layer with a bottom of the opening located therebetween, wherein, in the second conductivity-type barrier layer, a second conductivity-type impurity concentration A (cm -3) and a hydrogen concentration B (cm⁻³) satisfy 0.1 < B/A < 0.9z wherein the first conductivity-type contact layer is located between the second conductivity-type barrier layer and the source electrode. 2 SVG 13822591.09-17-2014.I07DQ₅ROPXXIFW3.CLM₃3432851.1.292.387.2182.470.svg 0.277 6.3 Chemistry Black and white

A method for producing a semiconductor device including a GaN-based compound semiconductor stacked layer (GaN-based stacked layer) including a first conductivity-type drift layer, a second conductivity-type barrier layer located on the first conductivity-type drift layer, and a first conductivity-type contact layer located on the second conductivity-type barrier layer, the method comprising a step of forming an opening in the GaN- based stacked layer by reactive ion etching (RIE) so that the opening extends from the first conductivity-type contact layer and reaches the first conductivity-type drift layer through the second conductivity-type barrier layer; 4 SVG 13822591.09-17-2014.I07DQ₅ROPXXIFW3.CLM₃3432853.1.292.387.2182.470.svg 0.277 6.3 Chemistry Black and white a step of forming a regrown layer so as to cover a portion of the GaN-based stacked layer that is exposed to the opening, the regrown layer including a channel layer composed of a GaN-based semiconductor and a carrier supply layer that supplies carriers to the channel layer; a step of forming an insulating layer so as to cover the regrown layer; and a step of forming a source electrode on the GaN-based stacked layer, forming a gate electrode on the insulating layer, and forming a drain electrode on any one of first conductivity-type regions that are present opposite the first conductivity-type contact layer with a bottom of the opening located therebetween, wherein, in formation of the second conductivity-type barrier layer, a second conductivity-type impurity concentration A (cm⁻³) and a hydrogen concentration B (cm⁻³) satisfy 0.1 < B/A < 0.9 1 wherein the first conductivity-type contact layer is located between the second conductivity-type barrier layer and the source electrode.

A semiconductor device including a GaN-based compound semiconductor stacked layer (GaN-based stacked layer) including a first conductivity-type drift layer, a second conductivity-type barrier layer located on the first conductivity-type drift layer, and a first conductivity-type contact layer located on the second conductivity-type barrier layer, the GaN-based stacked layer having an opening that extends from the first conductivity-type contact layer and reaches the first conductivity-type drift layer through the second conductivity-type barrier layer, the semiconductor device comprising: a regrown layer located so as to cover a portion of the GaN-based stacked layer that is exposed to the opening, the regrown layer including a channel layer composed of a GaN-based semiconductor and a carrier supply layer that supplies carriers to the channel layer; an insulating layer located so as to cover the regrown layer; a source electrode located on the GaN-based stacked layer; a gate electrode located on the insulating layer; and a drain electrode located on any one of first conductivity-type regions that are present opposite the first conductivity-type contact layer with a bottom of the opening located therebetween, wherein, in the second conductivity-type barrier layer, a second conductivity-type impurity concentration A (cm -3) and a hydrogen concentration B (cm⁻³) satisfy 0.1 < B/A < 0.9z wherein the first conductivity-type contact layer is located between the second conductivity-type barrier layer and the source electrode. 2 SVG 13822591.09-17-2014.I07DQ₅ROPXXIFW3.CLM₃3432851.1.292.387.2182.470.svg 0.277 6.3 Chemistry Black and white

A method for producing a semiconductor device including a GaN-based compound semiconductor stacked layer (GaN-based stacked layer) including a first conductivity-type drift layer, a second conductivity-type barrier layer located on the first conductivity-type drift layer, and a first conductivity-type contact layer located on the second conductivity-type barrier layer, the method comprising a step of forming an opening in the GaN- based stacked layer by reactive ion etching (RIE) so that the opening extends from the first conductivity-type contact layer and reaches the first conductivity-type drift layer through the second conductivity-type barrier layer; 4 SVG 13822591.09-17-2014.I07DQ₅ROPXXIFW3.CLM₃3432853.1.292.387.2182.470.svg 0.277 6.3 Chemistry Black and white a step of forming a regrown layer so as to cover a portion of the GaN-based stacked layer that is exposed to the opening, the regrown layer including a channel layer composed of a GaN-based semiconductor and a carrier supply layer that supplies carriers to the channel layer; a step of forming an insulating layer so as to cover the regrown layer; and a step of forming a source electrode on the GaN-based stacked layer, forming a gate electrode on the insulating layer, and forming a drain electrode on any one of first conductivity-type regions that are present opposite the first conductivity-type contact layer with a bottom of the opening located therebetween, wherein, in formation of the second conductivity-type barrier layer, a second conductivity-type impurity concentration A (cm⁻³) and a hydrogen concentration B (cm⁻³) satisfy 0.1 < B/A < 0.9 1 wherein the first conductivity-type contact layer is located between the second conductivity-type barrier layer and the source electrode.

A semiconductor device including a GaN-based compound semiconductor stacked layer (GaN-based stacked layer) including a first conductivity-type drift layer, a second conductivity-type barrier layer located on the first conductivity-type drift layer, and a first conductivity-type contact layer located on the second conductivity-type barrier layer, the GaN-based stacked layer having an opening that extends from the first conductivity-type contact layer and reaches the first conductivity-type drift layer through the second conductivity-type barrier layer, the semiconductor device comprising: a regrown layer located so as to cover a portion of the GaN-based stacked layer that is exposed to the opening, the regrown layer including a channel layer composed of a GaN-based semiconductor and a carrier supply layer that supplies carriers to the channel layer; an insulating layer located so as to cover the regrown layer; a source electrode located on the GaN-based stacked layer; a gate electrode located on the insulating layer; and a drain electrode located on any one of first conductivity-type regions that are present opposite the first conductivity-type contact layer with a bottom of the opening located therebetween, wherein, in the second conductivity-type barrier layer, a second conductivity-type impurity concentration A (cm -3) and a hydrogen concentration B (cm⁻³) satisfy 0.1 < B/A < 0.9z wherein the first conductivity-type contact layer is located between the second conductivity-type barrier layer and the source electrode. 2 SVG 13822591.09-17-2014.I07DQ₅ROPXXIFW3.CLM₃3432851.1.292.387.2182.470.svg 0.277 6.3 Chemistry Black and white

A method for producing a semiconductor device including a GaN-based compound semiconductor stacked layer (GaN-based stacked layer) including a first conductivity-type drift layer, a second conductivity-type barrier layer located on the first conductivity-type drift layer, and a first conductivity-type contact layer located on the second conductivity-type barrier layer, the method comprising a step of forming an opening in the GaN- based stacked layer by reactive ion etching (RIE) so that the opening extends from the first conductivity-type contact layer and reaches the first conductivity-type drift layer through the second conductivity-type barrier layer; 4 SVG 13822591.09-17-2014.I07DQ₅ROPXXIFW3.CLM₃3432853.1.292.387.2182.470.svg 0.277 6.3 Chemistry Black and white a step of forming a regrown layer so as to cover a portion of the GaN-based stacked layer that is exposed to the opening, the regrown layer including a channel layer composed of a GaN-based semiconductor and a carrier supply layer that supplies carriers to the channel layer; a step of forming an insulating layer so as to cover the regrown layer; and a step of forming a source electrode on the GaN-based stacked layer, forming a gate electrode on the insulating layer, and forming a drain electrode on any one of first conductivity-type regions that are present opposite the first conductivity-type contact layer with a bottom of the opening located therebetween, wherein, in formation of the second conductivity-type barrier layer, a second conductivity-type impurity concentration A (cm⁻³) and a hydrogen concentration B (cm⁻³) satisfy 0.1 < B/A < 0.9 1 wherein the first conductivity-type contact layer is located between the second conductivity-type barrier layer and the source electrode.