Patent
Atlas literature
Patent
US 11,508,824Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer, the gate stack comprising a gate electrode; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness [[under]] vertically beneath a first gate portion of the gate electrode of the gate stack, the polarization layer having a second portion having a second thickness [[under]] vertically beneath a second gate portion of the gate electrode of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness. Currently amended
The transistor of claim 1 wherein the second thickness is sufficiently thicker compared to the first thickness such that the transistor has a first threshold voltage for the first gate portion and a second threshold voltage for the second gate portion, wherein the first threshold voltage is greater than the second threshold voltage. Original
The transistor of claim 1 wherein the gate stack comprises a gate dielectric above the GaN layer and [[a]] the gate electrode on the gate dielectric. Currently amended
The transistor of claim 1 wherein the polarization layer comprises: aluminum, indium, gallium and nitrogen. Original
The transistor of claim 1 wherein the first portion of the polarization layer comprises a first layer comprising A l N and a second layer comprising A l InGaN and wherein the second portion of the polarization layer comprises a layer comprising A l N and a second layer comprising A l InGaN wherein the second layer of the second portion of the polarization layer is thicker than the second layer of the first portion of the polarization layer. Original
The transistor of claim 1 wherein the polarization layer has a third portion having a third thickness, wherein the third thickness is greater than the second thickness, the third portion beneath a third gate portion of the gate stack along a third portion of the gate width. Original
The transistor of claim 1 further comprising a pair of sidewall spacers on opposite sides of the gate stack along the gate width, one of the sidewall spacers of the pair of sidewall spacers formed on a source portion of the polarization layer, and the other sidewall spacer of the pair of sidewall spacers disposed on a drain portion of the polarization layer, the source and drain portions of the polarization layer having a thickness greater than the second thickness of the polarization layer. Original
The transistor of claim 1 wherein the polarization layer has a plurality of the first portions and a plurality of the second portions, wherein the first portions are interleaved with the second portions. Original
The transistor of claim I wherein the first thickness is a zero thickness. Original
The transistor of claim I wherein the first thickness is a non-zero thickness. Original
- 23. Canceled
Canceled
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness, wherein the second thickness is sufficiently thicker compared to the first thickness such that the transistor has a first threshold voltage for the first gate portion and a second threshold voltage for the second gate portion, wherein the first threshold voltage is greater than the second threshold voltage. New
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness, wherein the first portion of the polarization layer comprises a first layer comprising A l N and a second layer comprising A l InGaN and wherein the second portion of the polarization layer comprises a layer comprising A l N and a second layer comprising A l InGaN wherein the second layer of the second portion of the polarization layer is thicker than the second layer of the first portion of the polarization layer. New
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness, wherein the polarization layer has a third portion having a third thickness, wherein the third thickness is greater than the second thickness, the third portion beneath a third gate portion of the gate stack along a third portion of the gate width. New
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness; and a pair of sidewall spacers on opposite sides of the gate stack along the gate width, one of the sidewall spacers of the pair of sidewall spacers formed on a source portion of the polarization layer, and the other sidewall spacer of the pair of sidewall spacers disposed on a drain portion of the polarization layer, the source and drain portions of the polarization layer having a thickness greater than the second thickness of the polarization layer. New
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness, wherein the polarization layer has a plurality of the first portions and a plurality of the second portions, wherein the first portions are interleaved with the second portions. New
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride transistor with multiple threshold voltages
Materials described outside the worked examples.
gallium nitride
GaN
polarization layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,508,824Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer, the gate stack comprising a gate electrode; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness [[under]] vertically beneath a first gate portion of the gate electrode of the gate stack, the polarization layer having a second portion having a second thickness [[under]] vertically beneath a second gate portion of the gate electrode of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness. Currently amended
The transistor of claim 1 wherein the second thickness is sufficiently thicker compared to the first thickness such that the transistor has a first threshold voltage for the first gate portion and a second threshold voltage for the second gate portion, wherein the first threshold voltage is greater than the second threshold voltage. Original
The transistor of claim 1 wherein the gate stack comprises a gate dielectric above the GaN layer and [[a]] the gate electrode on the gate dielectric. Currently amended
The transistor of claim 1 wherein the polarization layer comprises: aluminum, indium, gallium and nitrogen. Original
The transistor of claim 1 wherein the first portion of the polarization layer comprises a first layer comprising A l N and a second layer comprising A l InGaN and wherein the second portion of the polarization layer comprises a layer comprising A l N and a second layer comprising A l InGaN wherein the second layer of the second portion of the polarization layer is thicker than the second layer of the first portion of the polarization layer. Original
The transistor of claim 1 wherein the polarization layer has a third portion having a third thickness, wherein the third thickness is greater than the second thickness, the third portion beneath a third gate portion of the gate stack along a third portion of the gate width. Original
The transistor of claim 1 further comprising a pair of sidewall spacers on opposite sides of the gate stack along the gate width, one of the sidewall spacers of the pair of sidewall spacers formed on a source portion of the polarization layer, and the other sidewall spacer of the pair of sidewall spacers disposed on a drain portion of the polarization layer, the source and drain portions of the polarization layer having a thickness greater than the second thickness of the polarization layer. Original
The transistor of claim 1 wherein the polarization layer has a plurality of the first portions and a plurality of the second portions, wherein the first portions are interleaved with the second portions. Original
The transistor of claim I wherein the first thickness is a zero thickness. Original
The transistor of claim I wherein the first thickness is a non-zero thickness. Original
- 23. Canceled
Canceled
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness, wherein the second thickness is sufficiently thicker compared to the first thickness such that the transistor has a first threshold voltage for the first gate portion and a second threshold voltage for the second gate portion, wherein the first threshold voltage is greater than the second threshold voltage. New
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness, wherein the first portion of the polarization layer comprises a first layer comprising A l N and a second layer comprising A l InGaN and wherein the second portion of the polarization layer comprises a layer comprising A l N and a second layer comprising A l InGaN wherein the second layer of the second portion of the polarization layer is thicker than the second layer of the first portion of the polarization layer. New
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness, wherein the polarization layer has a third portion having a third thickness, wherein the third thickness is greater than the second thickness, the third portion beneath a third gate portion of the gate stack along a third portion of the gate width. New
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness; and a pair of sidewall spacers on opposite sides of the gate stack along the gate width, one of the sidewall spacers of the pair of sidewall spacers formed on a source portion of the polarization layer, and the other sidewall spacer of the pair of sidewall spacers disposed on a drain portion of the polarization layer, the source and drain portions of the polarization layer having a thickness greater than the second thickness of the polarization layer. New
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness, wherein the polarization layer has a plurality of the first portions and a plurality of the second portions, wherein the first portions are interleaved with the second portions. New
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride transistor with multiple threshold voltages
Materials described outside the worked examples.
gallium nitride
GaN
polarization layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,508,824Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer, the gate stack comprising a gate electrode; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness [[under]] vertically beneath a first gate portion of the gate electrode of the gate stack, the polarization layer having a second portion having a second thickness [[under]] vertically beneath a second gate portion of the gate electrode of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness. Currently amended
The transistor of claim 1 wherein the second thickness is sufficiently thicker compared to the first thickness such that the transistor has a first threshold voltage for the first gate portion and a second threshold voltage for the second gate portion, wherein the first threshold voltage is greater than the second threshold voltage. Original
The transistor of claim 1 wherein the gate stack comprises a gate dielectric above the GaN layer and [[a]] the gate electrode on the gate dielectric. Currently amended
The transistor of claim 1 wherein the polarization layer comprises: aluminum, indium, gallium and nitrogen. Original
The transistor of claim 1 wherein the first portion of the polarization layer comprises a first layer comprising A l N and a second layer comprising A l InGaN and wherein the second portion of the polarization layer comprises a layer comprising A l N and a second layer comprising A l InGaN wherein the second layer of the second portion of the polarization layer is thicker than the second layer of the first portion of the polarization layer. Original
The transistor of claim 1 wherein the polarization layer has a third portion having a third thickness, wherein the third thickness is greater than the second thickness, the third portion beneath a third gate portion of the gate stack along a third portion of the gate width. Original
The transistor of claim 1 further comprising a pair of sidewall spacers on opposite sides of the gate stack along the gate width, one of the sidewall spacers of the pair of sidewall spacers formed on a source portion of the polarization layer, and the other sidewall spacer of the pair of sidewall spacers disposed on a drain portion of the polarization layer, the source and drain portions of the polarization layer having a thickness greater than the second thickness of the polarization layer. Original
The transistor of claim 1 wherein the polarization layer has a plurality of the first portions and a plurality of the second portions, wherein the first portions are interleaved with the second portions. Original
The transistor of claim I wherein the first thickness is a zero thickness. Original
The transistor of claim I wherein the first thickness is a non-zero thickness. Original
- 23. Canceled
Canceled
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness, wherein the second thickness is sufficiently thicker compared to the first thickness such that the transistor has a first threshold voltage for the first gate portion and a second threshold voltage for the second gate portion, wherein the first threshold voltage is greater than the second threshold voltage. New
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness, wherein the first portion of the polarization layer comprises a first layer comprising A l N and a second layer comprising A l InGaN and wherein the second portion of the polarization layer comprises a layer comprising A l N and a second layer comprising A l InGaN wherein the second layer of the second portion of the polarization layer is thicker than the second layer of the first portion of the polarization layer. New
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness, wherein the polarization layer has a third portion having a third thickness, wherein the third thickness is greater than the second thickness, the third portion beneath a third gate portion of the gate stack along a third portion of the gate width. New
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness; and a pair of sidewall spacers on opposite sides of the gate stack along the gate width, one of the sidewall spacers of the pair of sidewall spacers formed on a source portion of the polarization layer, and the other sidewall spacer of the pair of sidewall spacers disposed on a drain portion of the polarization layer, the source and drain portions of the polarization layer having a thickness greater than the second thickness of the polarization layer. New
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness, wherein the polarization layer has a plurality of the first portions and a plurality of the second portions, wherein the first portions are interleaved with the second portions. New
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride transistor with multiple threshold voltages
Materials described outside the worked examples.
gallium nitride
GaN
polarization layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,508,824Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer, the gate stack comprising a gate electrode; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness [[under]] vertically beneath a first gate portion of the gate electrode of the gate stack, the polarization layer having a second portion having a second thickness [[under]] vertically beneath a second gate portion of the gate electrode of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness. Currently amended
The transistor of claim 1 wherein the second thickness is sufficiently thicker compared to the first thickness such that the transistor has a first threshold voltage for the first gate portion and a second threshold voltage for the second gate portion, wherein the first threshold voltage is greater than the second threshold voltage. Original
The transistor of claim 1 wherein the gate stack comprises a gate dielectric above the GaN layer and [[a]] the gate electrode on the gate dielectric. Currently amended
The transistor of claim 1 wherein the polarization layer comprises: aluminum, indium, gallium and nitrogen. Original
The transistor of claim 1 wherein the first portion of the polarization layer comprises a first layer comprising A l N and a second layer comprising A l InGaN and wherein the second portion of the polarization layer comprises a layer comprising A l N and a second layer comprising A l InGaN wherein the second layer of the second portion of the polarization layer is thicker than the second layer of the first portion of the polarization layer. Original
The transistor of claim 1 wherein the polarization layer has a third portion having a third thickness, wherein the third thickness is greater than the second thickness, the third portion beneath a third gate portion of the gate stack along a third portion of the gate width. Original
The transistor of claim 1 further comprising a pair of sidewall spacers on opposite sides of the gate stack along the gate width, one of the sidewall spacers of the pair of sidewall spacers formed on a source portion of the polarization layer, and the other sidewall spacer of the pair of sidewall spacers disposed on a drain portion of the polarization layer, the source and drain portions of the polarization layer having a thickness greater than the second thickness of the polarization layer. Original
The transistor of claim 1 wherein the polarization layer has a plurality of the first portions and a plurality of the second portions, wherein the first portions are interleaved with the second portions. Original
The transistor of claim I wherein the first thickness is a zero thickness. Original
The transistor of claim I wherein the first thickness is a non-zero thickness. Original
- 23. Canceled
Canceled
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness, wherein the second thickness is sufficiently thicker compared to the first thickness such that the transistor has a first threshold voltage for the first gate portion and a second threshold voltage for the second gate portion, wherein the first threshold voltage is greater than the second threshold voltage. New
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness, wherein the first portion of the polarization layer comprises a first layer comprising A l N and a second layer comprising A l InGaN and wherein the second portion of the polarization layer comprises a layer comprising A l N and a second layer comprising A l InGaN wherein the second layer of the second portion of the polarization layer is thicker than the second layer of the first portion of the polarization layer. New
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness, wherein the polarization layer has a third portion having a third thickness, wherein the third thickness is greater than the second thickness, the third portion beneath a third gate portion of the gate stack along a third portion of the gate width. New
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness; and a pair of sidewall spacers on opposite sides of the gate stack along the gate width, one of the sidewall spacers of the pair of sidewall spacers formed on a source portion of the polarization layer, and the other sidewall spacer of the pair of sidewall spacers disposed on a drain portion of the polarization layer, the source and drain portions of the polarization layer having a thickness greater than the second thickness of the polarization layer. New
A transistor comprising: a gallium nitride layer over a substrate; a gate stack over the gallium nitride layer; a source region on a first side of the gate stack; a drain region on a second side of the gate stack, the second side opposite the first side, wherein the gate stack has a gate length in a first direction extending from the source region to the drain region, the gate stack having a gate width in a second direction perpendicular to the first direction and parallel to the source region and the drain region; and a polarization layer beneath the gate stack and on the GaN layer, the polarization layer having a first portion having a first thickness under a first gate portion of the gate stack, the polarization layer having a second portion having a second thickness under a second gate portion of the gate stack, the first gate portion along a first portion of the gate width and the second gate portion along a second portion of the gate width, wherein the second thickness is greater than the first thickness, wherein the polarization layer has a plurality of the first portions and a plurality of the second portions, wherein the first portions are interleaved with the second portions. New
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride transistor with multiple threshold voltages
Materials described outside the worked examples.
gallium nitride
GaN
polarization layer
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