Patent
US 8,263,984Process for making a GaN substrate
Bruce Faure
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,263,984Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making a GaN substrate, comprising: transferring a first monocrystal GaN layer onto a supporting substrate; growing a second monocrystal GaN layer on the first monocrystal GaN layer, the first and second monocrystal GaN layers together forming the GaN substrate, the GaN substrate having a thickness of at least 10 micrometers; and removing at least one portion of the supporting substrate.
The method of claim 1, wherein a difference in thermal expansion coefficients of the GaN substrate and the supporting substrate is between about &4-1-~ 0. 1-10~6 and about 2 -10- 6 K -' 2-74--over a range of temperatures extending from about 20 ° C to about 500 °C.
The method of claim 1, wherein the supporting substrate has at least one surface layer comprising germanium or a III -V semiconductor material.
The method of claim 1, further comprising forming a protective coating on the supporting substrate prior to transferring the first monocrystal GaN layer onto the supporting substrate.
The method of claim 1, wherein transferring the first monocrystal GaN layer onto the supporting substrate comprises forming a bonding layer on at least one of a bonding surface of the monocrystal GaN layer and a bonding surface of the supporting substrate before contacting the supporting substrate with the first monocrystal GaN layer.
The method of claim 1, further comprising epitaxial growth of additional material on the GaN substrate.
The method of claim 1, wherein the first monocrystal GaN layer has a thickness between about 500 angstroms and about 1 micrometer.
A method as recited in claim 1, wherein transferring a first monocrystal GaN layer onto a supporting substrate comprises: bonding an initial structure comprising the first monocrystal GaN layer to the supporting substrate; and 4 Serial No. 12/310,345 removing a portion of the initial structure from the first monocrystal GaN layer and leaving the first monocrystal GaN layer on the supporting substrate.
The method of claim 13, wherein chemically etching the at least one portion of the supporting substrate comprises etching the at least one portion of the supporting substrate using aqua regia.
The method of claim 13, wherein chemically etching the at least one portion of the supporting substrate comprises chemically etching the at least one portion of the supporting substrate in an enclosure in which the second monocrystal GaN layer is grown on the first monocrystal GaN layer without handling the supporting substrate between chemically etching the at least one portion of the supporting substrate and growing the second monocrystal GaN layer on the first monocrystal GaN layer.
that -theTh e method of claim 15, wherein chemically etching the at least one portion of the supporting substrate comprises etching the at least one portion of the supporting substrate using gaseous hydrochloric acid.
A semiconductor structure comprising: a GaN substrate on GaAs, the GaN substrate having a density of dislocations less than about 108 dislocations/cm 2 and having a thickness larger than about 10 micrometers.
A GaN substrate having a density of dislocations less than about 108 dislocations/cm2 and having a thickness between 10 and 100 micrometers.
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate
GaN substrate on GaAs
Materials described outside the worked examples.
GaN
germanium
Ge
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN substrate dislocation density upper bound (claim 21 and 22) | ≤ 100000000 dislocations/cm2 | GaN |
GaN substrate thickness range (claim 22) | 10–100 micrometers |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,263,984Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making a GaN substrate, comprising: transferring a first monocrystal GaN layer onto a supporting substrate; growing a second monocrystal GaN layer on the first monocrystal GaN layer, the first and second monocrystal GaN layers together forming the GaN substrate, the GaN substrate having a thickness of at least 10 micrometers; and removing at least one portion of the supporting substrate.
The method of claim 1, wherein a difference in thermal expansion coefficients of the GaN substrate and the supporting substrate is between about &4-1-~ 0. 1-10~6 and about 2 -10- 6 K -' 2-74--over a range of temperatures extending from about 20 ° C to about 500 °C.
The method of claim 1, wherein the supporting substrate has at least one surface layer comprising germanium or a III -V semiconductor material.
The method of claim 1, further comprising forming a protective coating on the supporting substrate prior to transferring the first monocrystal GaN layer onto the supporting substrate.
The method of claim 1, wherein transferring the first monocrystal GaN layer onto the supporting substrate comprises forming a bonding layer on at least one of a bonding surface of the monocrystal GaN layer and a bonding surface of the supporting substrate before contacting the supporting substrate with the first monocrystal GaN layer.
The method of claim 1, further comprising epitaxial growth of additional material on the GaN substrate.
The method of claim 1, wherein the first monocrystal GaN layer has a thickness between about 500 angstroms and about 1 micrometer.
A method as recited in claim 1, wherein transferring a first monocrystal GaN layer onto a supporting substrate comprises: bonding an initial structure comprising the first monocrystal GaN layer to the supporting substrate; and 4 Serial No. 12/310,345 removing a portion of the initial structure from the first monocrystal GaN layer and leaving the first monocrystal GaN layer on the supporting substrate.
The method of claim 13, wherein chemically etching the at least one portion of the supporting substrate comprises etching the at least one portion of the supporting substrate using aqua regia.
The method of claim 13, wherein chemically etching the at least one portion of the supporting substrate comprises chemically etching the at least one portion of the supporting substrate in an enclosure in which the second monocrystal GaN layer is grown on the first monocrystal GaN layer without handling the supporting substrate between chemically etching the at least one portion of the supporting substrate and growing the second monocrystal GaN layer on the first monocrystal GaN layer.
that -theTh e method of claim 15, wherein chemically etching the at least one portion of the supporting substrate comprises etching the at least one portion of the supporting substrate using gaseous hydrochloric acid.
A semiconductor structure comprising: a GaN substrate on GaAs, the GaN substrate having a density of dislocations less than about 108 dislocations/cm 2 and having a thickness larger than about 10 micrometers.
A GaN substrate having a density of dislocations less than about 108 dislocations/cm2 and having a thickness between 10 and 100 micrometers.
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate
GaN substrate on GaAs
Materials described outside the worked examples.
GaN
germanium
Ge
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN substrate dislocation density upper bound (claim 21 and 22) | ≤ 100000000 dislocations/cm2 | GaN |
GaN substrate thickness range (claim 22) | 10–100 micrometers |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,263,984Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making a GaN substrate, comprising: transferring a first monocrystal GaN layer onto a supporting substrate; growing a second monocrystal GaN layer on the first monocrystal GaN layer, the first and second monocrystal GaN layers together forming the GaN substrate, the GaN substrate having a thickness of at least 10 micrometers; and removing at least one portion of the supporting substrate.
The method of claim 1, wherein a difference in thermal expansion coefficients of the GaN substrate and the supporting substrate is between about &4-1-~ 0. 1-10~6 and about 2 -10- 6 K -' 2-74--over a range of temperatures extending from about 20 ° C to about 500 °C.
The method of claim 1, wherein the supporting substrate has at least one surface layer comprising germanium or a III -V semiconductor material.
The method of claim 1, further comprising forming a protective coating on the supporting substrate prior to transferring the first monocrystal GaN layer onto the supporting substrate.
The method of claim 1, wherein transferring the first monocrystal GaN layer onto the supporting substrate comprises forming a bonding layer on at least one of a bonding surface of the monocrystal GaN layer and a bonding surface of the supporting substrate before contacting the supporting substrate with the first monocrystal GaN layer.
The method of claim 1, further comprising epitaxial growth of additional material on the GaN substrate.
The method of claim 1, wherein the first monocrystal GaN layer has a thickness between about 500 angstroms and about 1 micrometer.
A method as recited in claim 1, wherein transferring a first monocrystal GaN layer onto a supporting substrate comprises: bonding an initial structure comprising the first monocrystal GaN layer to the supporting substrate; and 4 Serial No. 12/310,345 removing a portion of the initial structure from the first monocrystal GaN layer and leaving the first monocrystal GaN layer on the supporting substrate.
The method of claim 13, wherein chemically etching the at least one portion of the supporting substrate comprises etching the at least one portion of the supporting substrate using aqua regia.
The method of claim 13, wherein chemically etching the at least one portion of the supporting substrate comprises chemically etching the at least one portion of the supporting substrate in an enclosure in which the second monocrystal GaN layer is grown on the first monocrystal GaN layer without handling the supporting substrate between chemically etching the at least one portion of the supporting substrate and growing the second monocrystal GaN layer on the first monocrystal GaN layer.
that -theTh e method of claim 15, wherein chemically etching the at least one portion of the supporting substrate comprises etching the at least one portion of the supporting substrate using gaseous hydrochloric acid.
A semiconductor structure comprising: a GaN substrate on GaAs, the GaN substrate having a density of dislocations less than about 108 dislocations/cm 2 and having a thickness larger than about 10 micrometers.
A GaN substrate having a density of dislocations less than about 108 dislocations/cm2 and having a thickness between 10 and 100 micrometers.
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate
GaN substrate on GaAs
Materials described outside the worked examples.
GaN
germanium
Ge
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN substrate dislocation density upper bound (claim 21 and 22) | ≤ 100000000 dislocations/cm2 | GaN |
GaN substrate thickness range (claim 22) | 10–100 micrometers |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,263,984Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making a GaN substrate, comprising: transferring a first monocrystal GaN layer onto a supporting substrate; growing a second monocrystal GaN layer on the first monocrystal GaN layer, the first and second monocrystal GaN layers together forming the GaN substrate, the GaN substrate having a thickness of at least 10 micrometers; and removing at least one portion of the supporting substrate.
The method of claim 1, wherein a difference in thermal expansion coefficients of the GaN substrate and the supporting substrate is between about &4-1-~ 0. 1-10~6 and about 2 -10- 6 K -' 2-74--over a range of temperatures extending from about 20 ° C to about 500 °C.
The method of claim 1, wherein the supporting substrate has at least one surface layer comprising germanium or a III -V semiconductor material.
The method of claim 1, further comprising forming a protective coating on the supporting substrate prior to transferring the first monocrystal GaN layer onto the supporting substrate.
The method of claim 1, wherein transferring the first monocrystal GaN layer onto the supporting substrate comprises forming a bonding layer on at least one of a bonding surface of the monocrystal GaN layer and a bonding surface of the supporting substrate before contacting the supporting substrate with the first monocrystal GaN layer.
The method of claim 1, further comprising epitaxial growth of additional material on the GaN substrate.
The method of claim 1, wherein the first monocrystal GaN layer has a thickness between about 500 angstroms and about 1 micrometer.
A method as recited in claim 1, wherein transferring a first monocrystal GaN layer onto a supporting substrate comprises: bonding an initial structure comprising the first monocrystal GaN layer to the supporting substrate; and 4 Serial No. 12/310,345 removing a portion of the initial structure from the first monocrystal GaN layer and leaving the first monocrystal GaN layer on the supporting substrate.
The method of claim 13, wherein chemically etching the at least one portion of the supporting substrate comprises etching the at least one portion of the supporting substrate using aqua regia.
The method of claim 13, wherein chemically etching the at least one portion of the supporting substrate comprises chemically etching the at least one portion of the supporting substrate in an enclosure in which the second monocrystal GaN layer is grown on the first monocrystal GaN layer without handling the supporting substrate between chemically etching the at least one portion of the supporting substrate and growing the second monocrystal GaN layer on the first monocrystal GaN layer.
that -theTh e method of claim 15, wherein chemically etching the at least one portion of the supporting substrate comprises etching the at least one portion of the supporting substrate using gaseous hydrochloric acid.
A semiconductor structure comprising: a GaN substrate on GaAs, the GaN substrate having a density of dislocations less than about 108 dislocations/cm 2 and having a thickness larger than about 10 micrometers.
A GaN substrate having a density of dislocations less than about 108 dislocations/cm2 and having a thickness between 10 and 100 micrometers.
Layer stacks claimed or described, ordered top of device to substrate.
GaN substrate
GaN substrate on GaAs
Materials described outside the worked examples.
GaN
germanium
Ge
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN substrate dislocation density upper bound (claim 21 and 22) | ≤ 100000000 dislocations/cm2 | GaN |
GaN substrate thickness range (claim 22) | 10–100 micrometers |
Related documents with shared materials, methods, properties, or citations.
III-V semiconductor material
GaAs
SiO₂
Si₃N₄
first monocrystal GaN layer thickness range (claim 18); 500 angstroms to 1 micrometer | 0.05–1 micrometers | GaN |
Thickness | 50–1000 nm | — |
Thickness | 10–100 µm | — |
Temperature | 20–500 °C | — |
Temperature | 0.000001 K | — |
Thickness | ≥ 10 µm | — |
III-V semiconductor material
GaAs
SiO₂
Si₃N₄
first monocrystal GaN layer thickness range (claim 18); 500 angstroms to 1 micrometer | 0.05–1 micrometers | GaN |
Thickness | 50–1000 nm | — |
Thickness | 10–100 µm | — |
Temperature | 20–500 °C | — |
Temperature | 0.000001 K | — |
Thickness | ≥ 10 µm | — |
III-V semiconductor material
GaAs
SiO₂
Si₃N₄
first monocrystal GaN layer thickness range (claim 18); 500 angstroms to 1 micrometer | 0.05–1 micrometers | GaN |
Thickness | 50–1000 nm | — |
Thickness | 10–100 µm | — |
Temperature | 20–500 °C | — |
Temperature | 0.000001 K | — |
Thickness | ≥ 10 µm | — |
III-V semiconductor material
GaAs
SiO₂
Si₃N₄
first monocrystal GaN layer thickness range (claim 18); 500 angstroms to 1 micrometer | 0.05–1 micrometers | GaN |
Thickness | 50–1000 nm | — |
Thickness | 10–100 µm | — |
Temperature | 20–500 °C | — |
Temperature | 0.000001 K | — |
Thickness | ≥ 10 µm | — |