Patent
US 10,837,124OF INVENTION
Makoto KIYAMA
US
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Patent
Atlas literature
Patent
US 10,837,124Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate comprising a surface with a diameter of not less than 100 mm, a difference being not less than 0.1 c m- 1 and not more than 2 c m- 1 between maximum and minimum values of wave numbers at a maximum peak of peaks corresponding to an E 2H phonon mode in micro-Raman scattering mapping measurement at each of square regions having sides each having a length of 2 mm, the square regions being located at a total of five locations including a central location and four circumferential edge locations on the surface of the gallium nitride substrate, a difference being not less than 0.93 c m- 1 and not more than 2 c m- 1 between maximum and minimum values of the wave numbers at the maximum peak of the peaks corresponding to the E 2H phonon mode at all of measurement points in the five locations, wherein each of the square regions having the sides each having the length of 2 mm on the surface of the gallium nitride substrate includes: a first region and a second region, an oxygen concentration of the first region being higher than an oxygen concentration of the second region, the first region includes a core portion being a region having dislocations intensively located therein, the second region being located away from the core portion. Previously presented
The gallium nitride substrate according to claim 1, wherein the first region has a threading dislocation density of not less than 1 x 10 6 cm 2; and the second region has a threading dislocation density of less than 1 x 10 6 c m 2. Previously presented
A bonded substrate in which the gallium nitride substrate recited in claim 1 is bonded to a supporting substrate. Previously presented
The gallium nitride substrate according to claim 1, wherein the difference at each of the five locations is not less than 0.11 c m- 1 and not more than 1.79 cm -1. Previously presented
The gallium nitride substrate according to claim 1, wherein the difference at all of the five locations is not more than 1.93 c m- 1. Previously presented
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
bonded substrate
Materials described outside the worked examples.
gallium nitride
GaN
silicon oxide
SiO₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
E2H phonon mode micro-Raman peak wavenumber difference (max-min) per 2mm square region | 0.1–2 | GaN |
E2H phonon mode micro-Raman peak wavenumber difference (max-min) across all five locations | 0.93–2 |
Table 1
SVG 16571599.10-16-2019.K₁WF₈₂BCLXEAPX0.SPEC.23.4.286.755.2130.2374.svg
Results thereof are shown in Table 1.
p. 21
Table 3
Results thereof are shown in Table 3.
p. 26
Table 4
Moreover, Table 4 shows manufacturing conditions in the method for manufactur
p. 26
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,837,124Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate comprising a surface with a diameter of not less than 100 mm, a difference being not less than 0.1 c m- 1 and not more than 2 c m- 1 between maximum and minimum values of wave numbers at a maximum peak of peaks corresponding to an E 2H phonon mode in micro-Raman scattering mapping measurement at each of square regions having sides each having a length of 2 mm, the square regions being located at a total of five locations including a central location and four circumferential edge locations on the surface of the gallium nitride substrate, a difference being not less than 0.93 c m- 1 and not more than 2 c m- 1 between maximum and minimum values of the wave numbers at the maximum peak of the peaks corresponding to the E 2H phonon mode at all of measurement points in the five locations, wherein each of the square regions having the sides each having the length of 2 mm on the surface of the gallium nitride substrate includes: a first region and a second region, an oxygen concentration of the first region being higher than an oxygen concentration of the second region, the first region includes a core portion being a region having dislocations intensively located therein, the second region being located away from the core portion. Previously presented
The gallium nitride substrate according to claim 1, wherein the first region has a threading dislocation density of not less than 1 x 10 6 cm 2; and the second region has a threading dislocation density of less than 1 x 10 6 c m 2. Previously presented
A bonded substrate in which the gallium nitride substrate recited in claim 1 is bonded to a supporting substrate. Previously presented
The gallium nitride substrate according to claim 1, wherein the difference at each of the five locations is not less than 0.11 c m- 1 and not more than 1.79 cm -1. Previously presented
The gallium nitride substrate according to claim 1, wherein the difference at all of the five locations is not more than 1.93 c m- 1. Previously presented
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
bonded substrate
Materials described outside the worked examples.
gallium nitride
GaN
silicon oxide
SiO₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
E2H phonon mode micro-Raman peak wavenumber difference (max-min) per 2mm square region | 0.1–2 | GaN |
E2H phonon mode micro-Raman peak wavenumber difference (max-min) across all five locations | 0.93–2 |
Table 1
SVG 16571599.10-16-2019.K₁WF₈₂BCLXEAPX0.SPEC.23.4.286.755.2130.2374.svg
Results thereof are shown in Table 1.
p. 21
Table 3
Results thereof are shown in Table 3.
p. 26
Table 4
Moreover, Table 4 shows manufacturing conditions in the method for manufactur
p. 26
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,837,124Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate comprising a surface with a diameter of not less than 100 mm, a difference being not less than 0.1 c m- 1 and not more than 2 c m- 1 between maximum and minimum values of wave numbers at a maximum peak of peaks corresponding to an E 2H phonon mode in micro-Raman scattering mapping measurement at each of square regions having sides each having a length of 2 mm, the square regions being located at a total of five locations including a central location and four circumferential edge locations on the surface of the gallium nitride substrate, a difference being not less than 0.93 c m- 1 and not more than 2 c m- 1 between maximum and minimum values of the wave numbers at the maximum peak of the peaks corresponding to the E 2H phonon mode at all of measurement points in the five locations, wherein each of the square regions having the sides each having the length of 2 mm on the surface of the gallium nitride substrate includes: a first region and a second region, an oxygen concentration of the first region being higher than an oxygen concentration of the second region, the first region includes a core portion being a region having dislocations intensively located therein, the second region being located away from the core portion. Previously presented
The gallium nitride substrate according to claim 1, wherein the first region has a threading dislocation density of not less than 1 x 10 6 cm 2; and the second region has a threading dislocation density of less than 1 x 10 6 c m 2. Previously presented
A bonded substrate in which the gallium nitride substrate recited in claim 1 is bonded to a supporting substrate. Previously presented
The gallium nitride substrate according to claim 1, wherein the difference at each of the five locations is not less than 0.11 c m- 1 and not more than 1.79 cm -1. Previously presented
The gallium nitride substrate according to claim 1, wherein the difference at all of the five locations is not more than 1.93 c m- 1. Previously presented
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
bonded substrate
Materials described outside the worked examples.
gallium nitride
GaN
silicon oxide
SiO₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
E2H phonon mode micro-Raman peak wavenumber difference (max-min) per 2mm square region | 0.1–2 | GaN |
E2H phonon mode micro-Raman peak wavenumber difference (max-min) across all five locations | 0.93–2 |
Table 1
SVG 16571599.10-16-2019.K₁WF₈₂BCLXEAPX0.SPEC.23.4.286.755.2130.2374.svg
Results thereof are shown in Table 1.
p. 21
Table 3
Results thereof are shown in Table 3.
p. 26
Table 4
Moreover, Table 4 shows manufacturing conditions in the method for manufactur
p. 26
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,837,124Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate comprising a surface with a diameter of not less than 100 mm, a difference being not less than 0.1 c m- 1 and not more than 2 c m- 1 between maximum and minimum values of wave numbers at a maximum peak of peaks corresponding to an E 2H phonon mode in micro-Raman scattering mapping measurement at each of square regions having sides each having a length of 2 mm, the square regions being located at a total of five locations including a central location and four circumferential edge locations on the surface of the gallium nitride substrate, a difference being not less than 0.93 c m- 1 and not more than 2 c m- 1 between maximum and minimum values of the wave numbers at the maximum peak of the peaks corresponding to the E 2H phonon mode at all of measurement points in the five locations, wherein each of the square regions having the sides each having the length of 2 mm on the surface of the gallium nitride substrate includes: a first region and a second region, an oxygen concentration of the first region being higher than an oxygen concentration of the second region, the first region includes a core portion being a region having dislocations intensively located therein, the second region being located away from the core portion. Previously presented
The gallium nitride substrate according to claim 1, wherein the first region has a threading dislocation density of not less than 1 x 10 6 cm 2; and the second region has a threading dislocation density of less than 1 x 10 6 c m 2. Previously presented
A bonded substrate in which the gallium nitride substrate recited in claim 1 is bonded to a supporting substrate. Previously presented
The gallium nitride substrate according to claim 1, wherein the difference at each of the five locations is not less than 0.11 c m- 1 and not more than 1.79 cm -1. Previously presented
The gallium nitride substrate according to claim 1, wherein the difference at all of the five locations is not more than 1.93 c m- 1. Previously presented
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
bonded substrate
Materials described outside the worked examples.
gallium nitride
GaN
silicon oxide
SiO₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
E2H phonon mode micro-Raman peak wavenumber difference (max-min) per 2mm square region | 0.1–2 | GaN |
E2H phonon mode micro-Raman peak wavenumber difference (max-min) across all five locations | 0.93–2 |
Table 1
SVG 16571599.10-16-2019.K₁WF₈₂BCLXEAPX0.SPEC.23.4.286.755.2130.2374.svg
Results thereof are shown in Table 1.
p. 21
Table 3
Results thereof are shown in Table 3.
p. 26
Table 4
Moreover, Table 4 shows manufacturing conditions in the method for manufactur
p. 26
Related documents with shared materials, methods, properties, or citations.
gallium arsenide
GaAs
GaN |
E2H phonon mode micro-Raman peak wavenumber difference (max-min) per 2mm square region (refined range, claim 6) | 0.11–1.79 | GaN |
E2H phonon mode micro-Raman peak wavenumber difference (max-min) across all five locations (refined upper bound, claim 7) | ≤ 1.93 | GaN |
Thickness | 0.07–0.18 cm | — |
Duration | ≤ 10 minutes | — |
Thickness | ≤ 0.1 mm | — |
Thickness | ≤ 0.2 cm | — |
Thickness | ≤ 0.1 cm | — |
Thickness | ≥ 2 cm | — |
Thickness | ≥ 1 cm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 150 mm | — |
Thickness | ≥ 1.79 cm | — |
gallium arsenide
GaAs
GaN |
E2H phonon mode micro-Raman peak wavenumber difference (max-min) per 2mm square region (refined range, claim 6) | 0.11–1.79 | GaN |
E2H phonon mode micro-Raman peak wavenumber difference (max-min) across all five locations (refined upper bound, claim 7) | ≤ 1.93 | GaN |
Thickness | 0.07–0.18 cm | — |
Duration | ≤ 10 minutes | — |
Thickness | ≤ 0.1 mm | — |
Thickness | ≤ 0.2 cm | — |
Thickness | ≤ 0.1 cm | — |
Thickness | ≥ 2 cm | — |
Thickness | ≥ 1 cm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 150 mm | — |
Thickness | ≥ 1.79 cm | — |
gallium arsenide
GaAs
GaN |
E2H phonon mode micro-Raman peak wavenumber difference (max-min) per 2mm square region (refined range, claim 6) | 0.11–1.79 | GaN |
E2H phonon mode micro-Raman peak wavenumber difference (max-min) across all five locations (refined upper bound, claim 7) | ≤ 1.93 | GaN |
Thickness | 0.07–0.18 cm | — |
Duration | ≤ 10 minutes | — |
Thickness | ≤ 0.1 mm | — |
Thickness | ≤ 0.2 cm | — |
Thickness | ≤ 0.1 cm | — |
Thickness | ≥ 2 cm | — |
Thickness | ≥ 1 cm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 150 mm | — |
Thickness | ≥ 1.79 cm | — |
gallium arsenide
GaAs
GaN |
E2H phonon mode micro-Raman peak wavenumber difference (max-min) per 2mm square region (refined range, claim 6) | 0.11–1.79 | GaN |
E2H phonon mode micro-Raman peak wavenumber difference (max-min) across all five locations (refined upper bound, claim 7) | ≤ 1.93 | GaN |
Thickness | 0.07–0.18 cm | — |
Duration | ≤ 10 minutes | — |
Thickness | ≤ 0.1 mm | — |
Thickness | ≤ 0.2 cm | — |
Thickness | ≤ 0.1 cm | — |
Thickness | ≥ 2 cm | — |
Thickness | ≥ 1 cm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 150 mm | — |
Thickness | ≥ 1.79 cm | — |