Patent
US 8,541,869CLEAVED FACET (Ga,Al,In)N EDGE-EMITTING LASER DIODES GROWN ON SEMIPOLAR {11-2n} BULK GALLIUM NITRIDE SUBSTRATES
Shuji Nakamura, James S. Speck, Steven P. Denbaars, Anurag Tyagi
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,541,869Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic of the present invention wherein the cross-section is along the mirror facet parallel to the (10-10) m -plane.
FIG. 2 is a schematic of the {11-22} or {11-2-2} plane with respect to the GaN wurtzite cell. 25
FIG. 3 is a flowchart that illustrates one embodiment of the fabrication process for a device of the present invention.
FIG. 20 1 is created using a conventional metal organic chemical vapor deposition (MOC VD) process, although other processes may be used as well. Moreover, the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
IN THE CLAIMS Please cancel claims 7 and 14, and amend claims 1 and 8, as follows:
The method of claim 1, wherein the I II -nitride semiconductor light emitting device is an edge-emitting laser diode.
The device of claim 1, wherein the semipolar bulk III- nitride substrate is a semipolar bulk gallium nitride substrate.
The device of claim 1, wherein the cleaved facets have an m -plane or a- plane orientation.
The device of claim 1, wherein the I II -nitride substrate is thinned to facilitate cleaving.
canceled
canceled
A process for fabricating an optoelectronic device, comprising: -2- G&C 30794.221- U S-U₁ forming a III -nitride semiconductor light emitting device on a surface of a III -nitride substrate having a semipolar orientation, wherein the I II -nitride substrate is a semipolar bulk III- nitride substrate; creating a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the I II -nitride substrate; and cleaving the I II -nitride substrate along a direction substantially perpendicular to the surface of the I II -nitride substrate having the semipolar orientation, in order to create one or more cleaved facets.
The method of claim 8, wherein the I II -nitride semiconductor light emitting device is an edge-emitting laser diode.
The method of claim 8, wherein the semipolar bulk III -nitride substrate is a semipolar bulk gallium nitride substrate.
The method of claim 8, wherein the cleaved facets have an m -plane or a-plane orientation.
The method of claim 8, further comprising thinning the I II -nitride substrate to facilitate cleaving.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
III-nitride edge-emitting laser diode with cleaved facets on semipolar substrate
Materials described outside the worked examples.
III-nitride substrate (semipolar)
semipolar bulk gallium nitride substrate
GaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,541,869Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic of the present invention wherein the cross-section is along the mirror facet parallel to the (10-10) m -plane.
FIG. 2 is a schematic of the {11-22} or {11-2-2} plane with respect to the GaN wurtzite cell. 25
FIG. 3 is a flowchart that illustrates one embodiment of the fabrication process for a device of the present invention.
FIG. 20 1 is created using a conventional metal organic chemical vapor deposition (MOC VD) process, although other processes may be used as well. Moreover, the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
IN THE CLAIMS Please cancel claims 7 and 14, and amend claims 1 and 8, as follows:
The method of claim 1, wherein the I II -nitride semiconductor light emitting device is an edge-emitting laser diode.
The device of claim 1, wherein the semipolar bulk III- nitride substrate is a semipolar bulk gallium nitride substrate.
The device of claim 1, wherein the cleaved facets have an m -plane or a- plane orientation.
The device of claim 1, wherein the I II -nitride substrate is thinned to facilitate cleaving.
canceled
canceled
A process for fabricating an optoelectronic device, comprising: -2- G&C 30794.221- U S-U₁ forming a III -nitride semiconductor light emitting device on a surface of a III -nitride substrate having a semipolar orientation, wherein the I II -nitride substrate is a semipolar bulk III- nitride substrate; creating a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the I II -nitride substrate; and cleaving the I II -nitride substrate along a direction substantially perpendicular to the surface of the I II -nitride substrate having the semipolar orientation, in order to create one or more cleaved facets.
The method of claim 8, wherein the I II -nitride semiconductor light emitting device is an edge-emitting laser diode.
The method of claim 8, wherein the semipolar bulk III -nitride substrate is a semipolar bulk gallium nitride substrate.
The method of claim 8, wherein the cleaved facets have an m -plane or a-plane orientation.
The method of claim 8, further comprising thinning the I II -nitride substrate to facilitate cleaving.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
III-nitride edge-emitting laser diode with cleaved facets on semipolar substrate
Materials described outside the worked examples.
III-nitride substrate (semipolar)
semipolar bulk gallium nitride substrate
GaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,541,869Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic of the present invention wherein the cross-section is along the mirror facet parallel to the (10-10) m -plane.
FIG. 2 is a schematic of the {11-22} or {11-2-2} plane with respect to the GaN wurtzite cell. 25
FIG. 3 is a flowchart that illustrates one embodiment of the fabrication process for a device of the present invention.
FIG. 20 1 is created using a conventional metal organic chemical vapor deposition (MOC VD) process, although other processes may be used as well. Moreover, the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
IN THE CLAIMS Please cancel claims 7 and 14, and amend claims 1 and 8, as follows:
The method of claim 1, wherein the I II -nitride semiconductor light emitting device is an edge-emitting laser diode.
The device of claim 1, wherein the semipolar bulk III- nitride substrate is a semipolar bulk gallium nitride substrate.
The device of claim 1, wherein the cleaved facets have an m -plane or a- plane orientation.
The device of claim 1, wherein the I II -nitride substrate is thinned to facilitate cleaving.
canceled
canceled
A process for fabricating an optoelectronic device, comprising: -2- G&C 30794.221- U S-U₁ forming a III -nitride semiconductor light emitting device on a surface of a III -nitride substrate having a semipolar orientation, wherein the I II -nitride substrate is a semipolar bulk III- nitride substrate; creating a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the I II -nitride substrate; and cleaving the I II -nitride substrate along a direction substantially perpendicular to the surface of the I II -nitride substrate having the semipolar orientation, in order to create one or more cleaved facets.
The method of claim 8, wherein the I II -nitride semiconductor light emitting device is an edge-emitting laser diode.
The method of claim 8, wherein the semipolar bulk III -nitride substrate is a semipolar bulk gallium nitride substrate.
The method of claim 8, wherein the cleaved facets have an m -plane or a-plane orientation.
The method of claim 8, further comprising thinning the I II -nitride substrate to facilitate cleaving.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
III-nitride edge-emitting laser diode with cleaved facets on semipolar substrate
Materials described outside the worked examples.
III-nitride substrate (semipolar)
semipolar bulk gallium nitride substrate
GaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,541,869Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic of the present invention wherein the cross-section is along the mirror facet parallel to the (10-10) m -plane.
FIG. 2 is a schematic of the {11-22} or {11-2-2} plane with respect to the GaN wurtzite cell. 25
FIG. 3 is a flowchart that illustrates one embodiment of the fabrication process for a device of the present invention.
FIG. 20 1 is created using a conventional metal organic chemical vapor deposition (MOC VD) process, although other processes may be used as well. Moreover, the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
IN THE CLAIMS Please cancel claims 7 and 14, and amend claims 1 and 8, as follows:
The method of claim 1, wherein the I II -nitride semiconductor light emitting device is an edge-emitting laser diode.
The device of claim 1, wherein the semipolar bulk III- nitride substrate is a semipolar bulk gallium nitride substrate.
The device of claim 1, wherein the cleaved facets have an m -plane or a- plane orientation.
The device of claim 1, wherein the I II -nitride substrate is thinned to facilitate cleaving.
canceled
canceled
A process for fabricating an optoelectronic device, comprising: -2- G&C 30794.221- U S-U₁ forming a III -nitride semiconductor light emitting device on a surface of a III -nitride substrate having a semipolar orientation, wherein the I II -nitride substrate is a semipolar bulk III- nitride substrate; creating a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the I II -nitride substrate; and cleaving the I II -nitride substrate along a direction substantially perpendicular to the surface of the I II -nitride substrate having the semipolar orientation, in order to create one or more cleaved facets.
The method of claim 8, wherein the I II -nitride semiconductor light emitting device is an edge-emitting laser diode.
The method of claim 8, wherein the semipolar bulk III -nitride substrate is a semipolar bulk gallium nitride substrate.
The method of claim 8, wherein the cleaved facets have an m -plane or a-plane orientation.
The method of claim 8, further comprising thinning the I II -nitride substrate to facilitate cleaving.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
III-nitride edge-emitting laser diode with cleaved facets on semipolar substrate
Materials described outside the worked examples.
III-nitride substrate (semipolar)
semipolar bulk gallium nitride substrate
GaN
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
n-type AlGaN/GaN strained layer superlattice cladding layer
AlGaN/GaN
InGaN/GaN multiple quantum well active layer
InGaN/GaN
SiO₂ passivation layer
SiO₂
Ti/Al/Ni/Au contact
Ni/Au contact
n-type AlGaN/GaN strained layer superlattice cladding layer
AlGaN/GaN
InGaN/GaN multiple quantum well active layer
InGaN/GaN
SiO₂ passivation layer
SiO₂
Ti/Al/Ni/Au contact
Ni/Au contact
n-type AlGaN/GaN strained layer superlattice cladding layer
AlGaN/GaN
InGaN/GaN multiple quantum well active layer
InGaN/GaN
SiO₂ passivation layer
SiO₂
Ti/Al/Ni/Au contact
Ni/Au contact
n-type AlGaN/GaN strained layer superlattice cladding layer
AlGaN/GaN
InGaN/GaN multiple quantum well active layer
InGaN/GaN
SiO₂ passivation layer
SiO₂
Ti/Al/Ni/Au contact
Ni/Au contact