Patent
US 9,431,488COMPOSITE SUBSTRATE OF GALLIUM NITRIDE AND METAL OXIDE
Tadao HASHIMOTO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,431,488Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic drawing of the composite substrate. In the figure each number represents the followings: 1. The(first layer composed of Ga xAly Ini -x-y N …
FIG. 2 is an example of process flow for preparing and using the composite substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A composite substrate for device fabrication comprising a(first layer composed of GaxAly Ini-x-y N 0 <x< 1, 0 <x+y 1) and a second layer attached to a surface of the first layer, wherein the second layer is composed of a metal oxide which partially or fully covers the first layer and which can be removed by in-situ etching in a device fabrication reactor.
A method according to The method of claim 1 wherein the method further comprises removing the protective metal oxide layer in the device fabrication reactor.
A method according to The method of claim 1 wherein the method further comprises a surface analysis to determine a thickness of the metal oxide layer.
A method according to The method of claim 1 8 wherein the surface analysis comprises X-ray photoelectron spectroscopy.
A composite substrate for device fabrication comprising a(first layer composed of GaxAly Ini-x-y N 0 <x< 1, 0 <x+y 1) and a metal oxide which partially or fully covers a surface of the first layer, wherein the metal oxide is removable by in-situ etching in a device fabrication reactor, and wherein a portion or portions of the metal oxide are positioned at termination points of threading dislocations or a termination line of stacking faults to provide a local mask to prevent propagation of the threading dislocations or stacking fault.
A method according to The method of claim 2 0 wherein the etchant is selected from ammonia, hydrogen, carbon monoxide, hydrogen chloride, Page 4 of 13 Application No.: 14/811,799 Docket No.: S I XPO I-0 12USD IV₁ hydrogen fluoride, hydrogen bromide, hydrogen iodide, chlorine, fluorine, and boron trich l oride.
A method according to The method of claim 2 0 wherein the protective metal oxide layer is completely removed prior to forming the device.
A method according to The method of claim 2 0 wherein the protective metal oxide layer is removed from the wafer's face but portions of the protective metal oxide layer remain at termination points of threading dislocations or stacking faults to provide a local mask to prevent defect propagation into the device during device fabrication. Page 5 of 13
A composite substrate of paragraph 1 or paragraph 2 wherein the second layer can be removed by etching at 1050 0 C or lower with ammonia. 10 Attorney Docket No. SIXPOI- 0 12USDIV 1 4. A composite substrate of any of paragraphs 1 -3 and wherein the metal oxide contains at least one oxide of gallium, aluminum, indium, zin c, magnesium, calcium, sodium, silicon, tin and titanium.
A composite substrate of any of paragraphs 1 -4 wherein the metal oxide is more than one atomic layer thick.
A composite substrate of paragraph 5 wherein the thickness of the metal oxide is large enough to be detected with x-ray photoelectron spectroscopy.
A composite substrate of any of paragraphs 1 through 6 wherein the first layer comprises highly-oriented poly crystalline or single crystalline GaN.
A composite substrate of paragraph 7 wherein the density of dislocations and grain boundaries of the crystalline GaN is less than 1 05 cm⁻²
A composite substrate of paragraph 7 wherein the metal oxide is on the gallium face of the first layer.
A composite substrate of paragraph 7 wherein the metal oxide is on the nitrogen face of the first layer.
A composite substrate of paragraph 7 wherein the metal oxide is on the non-polar in -face or a-face of the first layer.
A composite substrate of paragraph 7 wherein the metal oxide is on the gallium side semipolar face of the first layer.
A composite substrate of paragraph 7 wherein the metal oxide is on the nitrogen side semipolar face of the first layer.
A composite substrate of any of paragraphs 1 through 13 wherein the metal oxide is deposited onto and therefore intentionally formed on the first layer.
A method of protecting a surface of a group I II -nitride wafer comprising forming a protective layer upon a face of the wafer, the protective layer having sufficient thickness to protect the face from atmospheric oxidation during storage of the wafer.
A method of making an optical, electronic, or opto-electronic device comprising removing a protective layer from a face of a group I II -nitride wafer in a deposition reactor, and subsequently depositing a first electronic, optical, or opto-electronic material from which an electronic, optical, or opto-electronic device is formed. Claims What is claimed is:
A method comprising comprising: a. forming a protective metal oxide layer upon a face of a group I II -nitride wafer prior to loading the wafer in a device fabrication reactor, i. wherein the group I II -nitride wafer's face is of sufficient quality for epitaxial deposition of subsequent materials used to construct a device on said face, and ii. wherein
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Zinc oxide layer deposited on the Ga-polar surface of c-plane GaN substrate (dislocation density <10⁵ cm⁻²) by hydrothermal deposition at 300°C. First layer thickness ~300 microns, second layer (ZnO) thickness ~1 micron. ZnO layer etched under ammonia flow in MOCVD reactor while ramping substrate temperature, maintained at ~1050°C until GaN layer is exposed.
2 materials1 process step
Silicon oxide layer deposited on the Ga-polar surface of c-plane GaN substrate (dislocation density <10⁵ cm⁻²) by spin-coat technique; baked at ~150°C. First layer thickness ~300 microns, second layer (SiO₂) thickness ~10 microns. SiO₂ layer etched under ammonia flow in MOCVD reactor while ramping substrate temperature, maintained at ~1050°C until GaN layer is exposed.
2 materials1 process step
Gallium oxide layer formed on the Ga-polar surface of c-plane GaN substrate (dislocation density <10⁵ cm⁻²) by acid etching. First layer thickness ~300 microns, second layer (Ga₂O₃) thickness a few monolayers. Gallium oxide layer etched under ammonia flow in MOCVD reactor while ramping substrate temperature.
Layer stacks claimed or described, ordered top of device to substrate.
composite substrate for device fabrication
Materials described outside the worked examples.
GaxAlyIni-x-yN
GaxAlyIn(1-x-y)N
metal oxide (generic)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dislocation density of GaN substrate (ammonothermal) | ≤ 100000 cm⁻² | GaN |
dislocation density of GaN substrate (claimed threshold) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,431,488Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic drawing of the composite substrate. In the figure each number represents the followings: 1. The(first layer composed of Ga xAly Ini -x-y N …
FIG. 2 is an example of process flow for preparing and using the composite substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A composite substrate for device fabrication comprising a(first layer composed of GaxAly Ini-x-y N 0 <x< 1, 0 <x+y 1) and a second layer attached to a surface of the first layer, wherein the second layer is composed of a metal oxide which partially or fully covers the first layer and which can be removed by in-situ etching in a device fabrication reactor.
A method according to The method of claim 1 wherein the method further comprises removing the protective metal oxide layer in the device fabrication reactor.
A method according to The method of claim 1 wherein the method further comprises a surface analysis to determine a thickness of the metal oxide layer.
A method according to The method of claim 1 8 wherein the surface analysis comprises X-ray photoelectron spectroscopy.
A composite substrate for device fabrication comprising a(first layer composed of GaxAly Ini-x-y N 0 <x< 1, 0 <x+y 1) and a metal oxide which partially or fully covers a surface of the first layer, wherein the metal oxide is removable by in-situ etching in a device fabrication reactor, and wherein a portion or portions of the metal oxide are positioned at termination points of threading dislocations or a termination line of stacking faults to provide a local mask to prevent propagation of the threading dislocations or stacking fault.
A method according to The method of claim 2 0 wherein the etchant is selected from ammonia, hydrogen, carbon monoxide, hydrogen chloride, Page 4 of 13 Application No.: 14/811,799 Docket No.: S I XPO I-0 12USD IV₁ hydrogen fluoride, hydrogen bromide, hydrogen iodide, chlorine, fluorine, and boron trich l oride.
A method according to The method of claim 2 0 wherein the protective metal oxide layer is completely removed prior to forming the device.
A method according to The method of claim 2 0 wherein the protective metal oxide layer is removed from the wafer's face but portions of the protective metal oxide layer remain at termination points of threading dislocations or stacking faults to provide a local mask to prevent defect propagation into the device during device fabrication. Page 5 of 13
A composite substrate of paragraph 1 or paragraph 2 wherein the second layer can be removed by etching at 1050 0 C or lower with ammonia. 10 Attorney Docket No. SIXPOI- 0 12USDIV 1 4. A composite substrate of any of paragraphs 1 -3 and wherein the metal oxide contains at least one oxide of gallium, aluminum, indium, zin c, magnesium, calcium, sodium, silicon, tin and titanium.
A composite substrate of any of paragraphs 1 -4 wherein the metal oxide is more than one atomic layer thick.
A composite substrate of paragraph 5 wherein the thickness of the metal oxide is large enough to be detected with x-ray photoelectron spectroscopy.
A composite substrate of any of paragraphs 1 through 6 wherein the first layer comprises highly-oriented poly crystalline or single crystalline GaN.
A composite substrate of paragraph 7 wherein the density of dislocations and grain boundaries of the crystalline GaN is less than 1 05 cm⁻²
A composite substrate of paragraph 7 wherein the metal oxide is on the gallium face of the first layer.
A composite substrate of paragraph 7 wherein the metal oxide is on the nitrogen face of the first layer.
A composite substrate of paragraph 7 wherein the metal oxide is on the non-polar in -face or a-face of the first layer.
A composite substrate of paragraph 7 wherein the metal oxide is on the gallium side semipolar face of the first layer.
A composite substrate of paragraph 7 wherein the metal oxide is on the nitrogen side semipolar face of the first layer.
A composite substrate of any of paragraphs 1 through 13 wherein the metal oxide is deposited onto and therefore intentionally formed on the first layer.
A method of protecting a surface of a group I II -nitride wafer comprising forming a protective layer upon a face of the wafer, the protective layer having sufficient thickness to protect the face from atmospheric oxidation during storage of the wafer.
A method of making an optical, electronic, or opto-electronic device comprising removing a protective layer from a face of a group I II -nitride wafer in a deposition reactor, and subsequently depositing a first electronic, optical, or opto-electronic material from which an electronic, optical, or opto-electronic device is formed. Claims What is claimed is:
A method comprising comprising: a. forming a protective metal oxide layer upon a face of a group I II -nitride wafer prior to loading the wafer in a device fabrication reactor, i. wherein the group I II -nitride wafer's face is of sufficient quality for epitaxial deposition of subsequent materials used to construct a device on said face, and ii. wherein
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Zinc oxide layer deposited on the Ga-polar surface of c-plane GaN substrate (dislocation density <10⁵ cm⁻²) by hydrothermal deposition at 300°C. First layer thickness ~300 microns, second layer (ZnO) thickness ~1 micron. ZnO layer etched under ammonia flow in MOCVD reactor while ramping substrate temperature, maintained at ~1050°C until GaN layer is exposed.
2 materials1 process step
Silicon oxide layer deposited on the Ga-polar surface of c-plane GaN substrate (dislocation density <10⁵ cm⁻²) by spin-coat technique; baked at ~150°C. First layer thickness ~300 microns, second layer (SiO₂) thickness ~10 microns. SiO₂ layer etched under ammonia flow in MOCVD reactor while ramping substrate temperature, maintained at ~1050°C until GaN layer is exposed.
2 materials1 process step
Gallium oxide layer formed on the Ga-polar surface of c-plane GaN substrate (dislocation density <10⁵ cm⁻²) by acid etching. First layer thickness ~300 microns, second layer (Ga₂O₃) thickness a few monolayers. Gallium oxide layer etched under ammonia flow in MOCVD reactor while ramping substrate temperature.
Layer stacks claimed or described, ordered top of device to substrate.
composite substrate for device fabrication
Materials described outside the worked examples.
GaxAlyIni-x-yN
GaxAlyIn(1-x-y)N
metal oxide (generic)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dislocation density of GaN substrate (ammonothermal) | ≤ 100000 cm⁻² | GaN |
dislocation density of GaN substrate (claimed threshold) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,431,488Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic drawing of the composite substrate. In the figure each number represents the followings: 1. The(first layer composed of Ga xAly Ini -x-y N …
FIG. 2 is an example of process flow for preparing and using the composite substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A composite substrate for device fabrication comprising a(first layer composed of GaxAly Ini-x-y N 0 <x< 1, 0 <x+y 1) and a second layer attached to a surface of the first layer, wherein the second layer is composed of a metal oxide which partially or fully covers the first layer and which can be removed by in-situ etching in a device fabrication reactor.
A method according to The method of claim 1 wherein the method further comprises removing the protective metal oxide layer in the device fabrication reactor.
A method according to The method of claim 1 wherein the method further comprises a surface analysis to determine a thickness of the metal oxide layer.
A method according to The method of claim 1 8 wherein the surface analysis comprises X-ray photoelectron spectroscopy.
A composite substrate for device fabrication comprising a(first layer composed of GaxAly Ini-x-y N 0 <x< 1, 0 <x+y 1) and a metal oxide which partially or fully covers a surface of the first layer, wherein the metal oxide is removable by in-situ etching in a device fabrication reactor, and wherein a portion or portions of the metal oxide are positioned at termination points of threading dislocations or a termination line of stacking faults to provide a local mask to prevent propagation of the threading dislocations or stacking fault.
A method according to The method of claim 2 0 wherein the etchant is selected from ammonia, hydrogen, carbon monoxide, hydrogen chloride, Page 4 of 13 Application No.: 14/811,799 Docket No.: S I XPO I-0 12USD IV₁ hydrogen fluoride, hydrogen bromide, hydrogen iodide, chlorine, fluorine, and boron trich l oride.
A method according to The method of claim 2 0 wherein the protective metal oxide layer is completely removed prior to forming the device.
A method according to The method of claim 2 0 wherein the protective metal oxide layer is removed from the wafer's face but portions of the protective metal oxide layer remain at termination points of threading dislocations or stacking faults to provide a local mask to prevent defect propagation into the device during device fabrication. Page 5 of 13
A composite substrate of paragraph 1 or paragraph 2 wherein the second layer can be removed by etching at 1050 0 C or lower with ammonia. 10 Attorney Docket No. SIXPOI- 0 12USDIV 1 4. A composite substrate of any of paragraphs 1 -3 and wherein the metal oxide contains at least one oxide of gallium, aluminum, indium, zin c, magnesium, calcium, sodium, silicon, tin and titanium.
A composite substrate of any of paragraphs 1 -4 wherein the metal oxide is more than one atomic layer thick.
A composite substrate of paragraph 5 wherein the thickness of the metal oxide is large enough to be detected with x-ray photoelectron spectroscopy.
A composite substrate of any of paragraphs 1 through 6 wherein the first layer comprises highly-oriented poly crystalline or single crystalline GaN.
A composite substrate of paragraph 7 wherein the density of dislocations and grain boundaries of the crystalline GaN is less than 1 05 cm⁻²
A composite substrate of paragraph 7 wherein the metal oxide is on the gallium face of the first layer.
A composite substrate of paragraph 7 wherein the metal oxide is on the nitrogen face of the first layer.
A composite substrate of paragraph 7 wherein the metal oxide is on the non-polar in -face or a-face of the first layer.
A composite substrate of paragraph 7 wherein the metal oxide is on the gallium side semipolar face of the first layer.
A composite substrate of paragraph 7 wherein the metal oxide is on the nitrogen side semipolar face of the first layer.
A composite substrate of any of paragraphs 1 through 13 wherein the metal oxide is deposited onto and therefore intentionally formed on the first layer.
A method of protecting a surface of a group I II -nitride wafer comprising forming a protective layer upon a face of the wafer, the protective layer having sufficient thickness to protect the face from atmospheric oxidation during storage of the wafer.
A method of making an optical, electronic, or opto-electronic device comprising removing a protective layer from a face of a group I II -nitride wafer in a deposition reactor, and subsequently depositing a first electronic, optical, or opto-electronic material from which an electronic, optical, or opto-electronic device is formed. Claims What is claimed is:
A method comprising comprising: a. forming a protective metal oxide layer upon a face of a group I II -nitride wafer prior to loading the wafer in a device fabrication reactor, i. wherein the group I II -nitride wafer's face is of sufficient quality for epitaxial deposition of subsequent materials used to construct a device on said face, and ii. wherein
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Zinc oxide layer deposited on the Ga-polar surface of c-plane GaN substrate (dislocation density <10⁵ cm⁻²) by hydrothermal deposition at 300°C. First layer thickness ~300 microns, second layer (ZnO) thickness ~1 micron. ZnO layer etched under ammonia flow in MOCVD reactor while ramping substrate temperature, maintained at ~1050°C until GaN layer is exposed.
2 materials1 process step
Silicon oxide layer deposited on the Ga-polar surface of c-plane GaN substrate (dislocation density <10⁵ cm⁻²) by spin-coat technique; baked at ~150°C. First layer thickness ~300 microns, second layer (SiO₂) thickness ~10 microns. SiO₂ layer etched under ammonia flow in MOCVD reactor while ramping substrate temperature, maintained at ~1050°C until GaN layer is exposed.
2 materials1 process step
Gallium oxide layer formed on the Ga-polar surface of c-plane GaN substrate (dislocation density <10⁵ cm⁻²) by acid etching. First layer thickness ~300 microns, second layer (Ga₂O₃) thickness a few monolayers. Gallium oxide layer etched under ammonia flow in MOCVD reactor while ramping substrate temperature.
Layer stacks claimed or described, ordered top of device to substrate.
composite substrate for device fabrication
Materials described outside the worked examples.
GaxAlyIni-x-yN
GaxAlyIn(1-x-y)N
metal oxide (generic)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dislocation density of GaN substrate (ammonothermal) | ≤ 100000 cm⁻² | GaN |
dislocation density of GaN substrate (claimed threshold) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,431,488Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic drawing of the composite substrate. In the figure each number represents the followings: 1. The(first layer composed of Ga xAly Ini -x-y N …
FIG. 2 is an example of process flow for preparing and using the composite substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A composite substrate for device fabrication comprising a(first layer composed of GaxAly Ini-x-y N 0 <x< 1, 0 <x+y 1) and a second layer attached to a surface of the first layer, wherein the second layer is composed of a metal oxide which partially or fully covers the first layer and which can be removed by in-situ etching in a device fabrication reactor.
A method according to The method of claim 1 wherein the method further comprises removing the protective metal oxide layer in the device fabrication reactor.
A method according to The method of claim 1 wherein the method further comprises a surface analysis to determine a thickness of the metal oxide layer.
A method according to The method of claim 1 8 wherein the surface analysis comprises X-ray photoelectron spectroscopy.
A composite substrate for device fabrication comprising a(first layer composed of GaxAly Ini-x-y N 0 <x< 1, 0 <x+y 1) and a metal oxide which partially or fully covers a surface of the first layer, wherein the metal oxide is removable by in-situ etching in a device fabrication reactor, and wherein a portion or portions of the metal oxide are positioned at termination points of threading dislocations or a termination line of stacking faults to provide a local mask to prevent propagation of the threading dislocations or stacking fault.
A method according to The method of claim 2 0 wherein the etchant is selected from ammonia, hydrogen, carbon monoxide, hydrogen chloride, Page 4 of 13 Application No.: 14/811,799 Docket No.: S I XPO I-0 12USD IV₁ hydrogen fluoride, hydrogen bromide, hydrogen iodide, chlorine, fluorine, and boron trich l oride.
A method according to The method of claim 2 0 wherein the protective metal oxide layer is completely removed prior to forming the device.
A method according to The method of claim 2 0 wherein the protective metal oxide layer is removed from the wafer's face but portions of the protective metal oxide layer remain at termination points of threading dislocations or stacking faults to provide a local mask to prevent defect propagation into the device during device fabrication. Page 5 of 13
A composite substrate of paragraph 1 or paragraph 2 wherein the second layer can be removed by etching at 1050 0 C or lower with ammonia. 10 Attorney Docket No. SIXPOI- 0 12USDIV 1 4. A composite substrate of any of paragraphs 1 -3 and wherein the metal oxide contains at least one oxide of gallium, aluminum, indium, zin c, magnesium, calcium, sodium, silicon, tin and titanium.
A composite substrate of any of paragraphs 1 -4 wherein the metal oxide is more than one atomic layer thick.
A composite substrate of paragraph 5 wherein the thickness of the metal oxide is large enough to be detected with x-ray photoelectron spectroscopy.
A composite substrate of any of paragraphs 1 through 6 wherein the first layer comprises highly-oriented poly crystalline or single crystalline GaN.
A composite substrate of paragraph 7 wherein the density of dislocations and grain boundaries of the crystalline GaN is less than 1 05 cm⁻²
A composite substrate of paragraph 7 wherein the metal oxide is on the gallium face of the first layer.
A composite substrate of paragraph 7 wherein the metal oxide is on the nitrogen face of the first layer.
A composite substrate of paragraph 7 wherein the metal oxide is on the non-polar in -face or a-face of the first layer.
A composite substrate of paragraph 7 wherein the metal oxide is on the gallium side semipolar face of the first layer.
A composite substrate of paragraph 7 wherein the metal oxide is on the nitrogen side semipolar face of the first layer.
A composite substrate of any of paragraphs 1 through 13 wherein the metal oxide is deposited onto and therefore intentionally formed on the first layer.
A method of protecting a surface of a group I II -nitride wafer comprising forming a protective layer upon a face of the wafer, the protective layer having sufficient thickness to protect the face from atmospheric oxidation during storage of the wafer.
A method of making an optical, electronic, or opto-electronic device comprising removing a protective layer from a face of a group I II -nitride wafer in a deposition reactor, and subsequently depositing a first electronic, optical, or opto-electronic material from which an electronic, optical, or opto-electronic device is formed. Claims What is claimed is:
A method comprising comprising: a. forming a protective metal oxide layer upon a face of a group I II -nitride wafer prior to loading the wafer in a device fabrication reactor, i. wherein the group I II -nitride wafer's face is of sufficient quality for epitaxial deposition of subsequent materials used to construct a device on said face, and ii. wherein
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Zinc oxide layer deposited on the Ga-polar surface of c-plane GaN substrate (dislocation density <10⁵ cm⁻²) by hydrothermal deposition at 300°C. First layer thickness ~300 microns, second layer (ZnO) thickness ~1 micron. ZnO layer etched under ammonia flow in MOCVD reactor while ramping substrate temperature, maintained at ~1050°C until GaN layer is exposed.
2 materials1 process step
Silicon oxide layer deposited on the Ga-polar surface of c-plane GaN substrate (dislocation density <10⁵ cm⁻²) by spin-coat technique; baked at ~150°C. First layer thickness ~300 microns, second layer (SiO₂) thickness ~10 microns. SiO₂ layer etched under ammonia flow in MOCVD reactor while ramping substrate temperature, maintained at ~1050°C until GaN layer is exposed.
2 materials1 process step
Gallium oxide layer formed on the Ga-polar surface of c-plane GaN substrate (dislocation density <10⁵ cm⁻²) by acid etching. First layer thickness ~300 microns, second layer (Ga₂O₃) thickness a few monolayers. Gallium oxide layer etched under ammonia flow in MOCVD reactor while ramping substrate temperature.
Layer stacks claimed or described, ordered top of device to substrate.
composite substrate for device fabrication
Materials described outside the worked examples.
GaxAlyIni-x-yN
GaxAlyIn(1-x-y)N
metal oxide (generic)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dislocation density of GaN substrate (ammonothermal) | ≤ 100000 cm⁻² | GaN |
dislocation density of GaN substrate (claimed threshold) |
Related documents with shared materials, methods, properties, or citations.
GaN |
Thickness | 105-2 cm | — |
Temperature | ≤ 1200 °C | — |
Temperature | ≤ 1e+50 °C | — |
Thickness | ≤ 100000 cm | — |
GaN |
Thickness | 105-2 cm | — |
Temperature | ≤ 1200 °C | — |
Temperature | ≤ 1e+50 °C | — |
Thickness | ≤ 100000 cm | — |
GaN |
Thickness | 105-2 cm | — |
Temperature | ≤ 1200 °C | — |
Temperature | ≤ 1e+50 °C | — |
Thickness | ≤ 100000 cm | — |
GaN |
Thickness | 105-2 cm | — |
Temperature | ≤ 1200 °C | — |
Temperature | ≤ 1e+50 °C | — |
Thickness | ≤ 100000 cm | — |