OF THE INVENTION

Masaki UENO

Patent

Atlas literature

Patent

US 9,472,629

OF THE INVENTION

Masaki UENO

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG. 11

FIG. 12

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 2 dependent

1
IndependentGaNgallium nitride substrate
A gallium nitride substrate with a primary surface for epitaxial growth of a III nitride semiconductor, the gallium nitride substrate, wherein: the primary surface has an oﬀ-angle, the oﬀ-angle is equal to or less than 0.7 degrees, and a c-face of the gallium nitride substrate is concave or convex, a curvature radius of R of C-plane of the gallium nitide substrate is equal to or more than 1.5 meter.
1. 2
  Dependent← claim 1GaNgallium nitride substrate
  The gallium nitride substrate according to claim 1, wherein maximum distance between one position and another position on an edge of the primary surface is equal to or greater than millimeters.
2. 3
  Dependent← claim 1GaNgallium nitride substrate
  The gallium nitride substrate according to claim 1, wherein the primary surface is equal to or greater than an area of 2-inch diameter circle. 24

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

gallium nitride substrate

GaNsubstrate

nitride semiconductor epitaxial substrate

AlxInYGa(1-x-y)Nsecond conductive type layer

AlxInYGa(1-x-y)Nactive region

AlxInYGa(1-x-y)Nfirst conductive type layer

GaNsubstrate

Materials

Materials described outside the worked examples.

gallium nitride

GaN

Substrate

Buffer Layer

III nitride semiconductor

Process steps

Additional fabrication and treatment steps described in the patent.

Hvpe Growth

Step 1

Process details

method:hydride vapor phase epitaxial growth (HVPE)

substrate:GaAs (111) single crystal wafer

description:A mask is formed on the III-V compound semiconductor substrate (e.g. GaAs (111) single crystal wafer) with windows arranged in [1 1-2] direction and [-111] direction. A GaN buffer layer is grown in these windows at lower temperature. Another GaN layer is deposited on the mask and GaN buffer layer at higher temperature using HVPE. GaAs wafer is then eliminated using etchant such as aqua regalis. A thick GaN epitaxial layer (at least 10 mm) is grown on the GaN single crystal semiconductor substrate to form the ingot.

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
off-angle of primary surface	≤ 0.7 degrees	GaN
curvature radius R of C-plane	≥ 1.5 meter

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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