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GaN-BASED LASER DEVICE | Matter42 Literature

Patent

Atlas literature

Patent

US 8,824,516

GaN-BASED LASER DEVICE

Toshiyuki KAWAKAMI

US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG. 11

FIG. 12

FIG. 13

FIG. 14

FIG. 15

FIG. 16

FIG. 17

FIG. 18

FIG. 19

FIG. 20

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 4 dependent

1
IndependentGaN-based semiconductorGaN-based laser device with mesa and ridge stripe
A GaN-based laser device having a GaN-based semiconductor stacked-layered structure, wherein said semiconductor stacked-layered structure includes a mesa portion and a ridge stripe, said mesa portion includes a light-emitting layer, said mesa portion has a pair of side surfaces ef-said mesai rtion tha t are parallel to a len g thwise direction of said rid g e stripe and are tilted titled with respect to a plane that is perpendicular to said light-emitting layer and parallel to the lengthwise direction of said rid g e stripe, said ridge stripe s trip is fermed di sp osed above said light-emitting layer so as to f or m be part of a stripe shap e d stripe-shaped waveguide, and a width of said ridge stri p e strip is smaller than a width of said mesa portion --and SVG 14020519.05-15-2014.HV₈EAPLJPXXIFW3.CLM.1.svg 0.49 6.5 Black and white
1. 2
  Dependent← claim 1GaN-based semiconductorGaN-based laser device with mesa and ridge stripe
  The GaN-based laser device according to claim 1, wherein the width of said mesa portion is decreased toward a top of the mesa portion
2. 3
  Dependent← claim 1GaN-based semiconductorGaN-based laser device with mesa and ridge stripe
  The GaN-based laser device according to claim 1, wherein each of said pair of the side surfaces of said mesa portion is tilted ti tled toward the ridge stripe at an angle of 15 degrees or more and less than 90 degrees with respect to said plane perpendicular to said light- emitting layer.
3. 4
  Dependent← claim 1GaN-based semiconductorGaN-based laser device with mesa and ridge stripe
  The GaN-based laser device according to claim 1, wherein the ridge stripe is diﬀerent from and stands on the mesa portion.
4. 5
  Dependent← claim 1GaN-based semiconductorGaN-based laser device with mesa and ridge stripe
  The GaN-based laser device according to claim 1, wherein the ridge stripe is made of semiconductor.
6
IndependentGaN-based semiconductorGaN-based laser device with trapezoidal mesa and ridge stripe
A GaN-based laser device comprising: a mesa portion extending in a longitudinal direction and comprising a plurality of semiconductor layers including a light-emitting layer; and a ridge stripe disposed on the mesa portion, made of semiconductor, and extending in the longitudinal direction, wherein in a sectional view of the laser device cut perpendicular to the longitudinal direction, the mesa portion has a shape of a trapezoid having parallel top and bottom sides and two inclined sides that connect the top and bottom sides and are inclined toward each other. 3 va-420279

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-based laser device with mesa and ridge stripe

GaN-based semiconductorridge stripe waveguide

GaN-based semiconductormesa with light emitting layer

substrate_or_basesubstrate or base

GaN-based laser device with trapezoidal mesa and ridge stripe

GaN-based semiconductorridge stripe

GaN-based semiconductortrapezoidal mesa with light emitting layer

Materials

Materials described outside the worked examples.

GaN-based semiconductor

Claimed Laser Device Material

Si-doped n-type GaN lower contact layer

GaN

Lower Contact Layer

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	390–420 nm	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

patent2014
GROWTH REACTOR FOR GALLIUM-NITRIDE CRYSTALS USING AMMONIA AND HYDROGEN CHLORIDE
material SiO2material GaN
patent2013
ABATEMENT OF REACTION GASES FROM GALLIUM NITRIDE DEPOSITION
material SiO2material GaN

Patent

Atlas literature

Patent

US 8,824,516

GaN-BASED LASER DEVICE

Toshiyuki KAWAKAMI

US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG. 11

FIG. 12

FIG. 13

FIG. 14

FIG. 15

FIG. 16

FIG. 17

FIG. 18

FIG. 19

FIG. 20

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 4 dependent

1
IndependentGaN-based semiconductorGaN-based laser device with mesa and ridge stripe
A GaN-based laser device having a GaN-based semiconductor stacked-layered structure, wherein said semiconductor stacked-layered structure includes a mesa portion and a ridge stripe, said mesa portion includes a light-emitting layer, said mesa portion has a pair of side surfaces ef-said mesai rtion tha t are parallel to a len g thwise direction of said rid g e stripe and are tilted titled with respect to a plane that is perpendicular to said light-emitting layer and parallel to the lengthwise direction of said rid g e stripe, said ridge stripe s trip is fermed di sp osed above said light-emitting layer so as to f or m be part of a stripe shap e d stripe-shaped waveguide, and a width of said ridge stri p e strip is smaller than a width of said mesa portion --and SVG 14020519.05-15-2014.HV₈EAPLJPXXIFW3.CLM.1.svg 0.49 6.5 Black and white
1. 2
  Dependent← claim 1GaN-based semiconductorGaN-based laser device with mesa and ridge stripe
  The GaN-based laser device according to claim 1, wherein the width of said mesa portion is decreased toward a top of the mesa portion
2. 3
  Dependent← claim 1GaN-based semiconductorGaN-based laser device with mesa and ridge stripe
  The GaN-based laser device according to claim 1, wherein each of said pair of the side surfaces of said mesa portion is tilted ti tled toward the ridge stripe at an angle of 15 degrees or more and less than 90 degrees with respect to said plane perpendicular to said light- emitting layer.
3. 4
  Dependent← claim 1GaN-based semiconductorGaN-based laser device with mesa and ridge stripe
  The GaN-based laser device according to claim 1, wherein the ridge stripe is diﬀerent from and stands on the mesa portion.
4. 5
  Dependent← claim 1GaN-based semiconductorGaN-based laser device with mesa and ridge stripe
  The GaN-based laser device according to claim 1, wherein the ridge stripe is made of semiconductor.
6
IndependentGaN-based semiconductorGaN-based laser device with trapezoidal mesa and ridge stripe
A GaN-based laser device comprising: a mesa portion extending in a longitudinal direction and comprising a plurality of semiconductor layers including a light-emitting layer; and a ridge stripe disposed on the mesa portion, made of semiconductor, and extending in the longitudinal direction, wherein in a sectional view of the laser device cut perpendicular to the longitudinal direction, the mesa portion has a shape of a trapezoid having parallel top and bottom sides and two inclined sides that connect the top and bottom sides and are inclined toward each other. 3 va-420279

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-based laser device with mesa and ridge stripe

GaN-based semiconductorridge stripe waveguide

GaN-based semiconductormesa with light emitting layer

substrate_or_basesubstrate or base

GaN-based laser device with trapezoidal mesa and ridge stripe

GaN-based semiconductorridge stripe

GaN-based semiconductortrapezoidal mesa with light emitting layer

Materials

Materials described outside the worked examples.

GaN-based semiconductor

Claimed Laser Device Material

Si-doped n-type GaN lower contact layer

GaN

Lower Contact Layer

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	390–420 nm	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

patent2014
GROWTH REACTOR FOR GALLIUM-NITRIDE CRYSTALS USING AMMONIA AND HYDROGEN CHLORIDE
material SiO2material GaN
patent2013
ABATEMENT OF REACTION GASES FROM GALLIUM NITRIDE DEPOSITION
material SiO2material GaN

Patent

Atlas literature

Patent

US 8,824,516

GaN-BASED LASER DEVICE

Toshiyuki KAWAKAMI

US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG. 11

FIG. 12

FIG. 13

FIG. 14

FIG. 15

FIG. 16

FIG. 17

FIG. 18

FIG. 19

FIG. 20

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 4 dependent

1
IndependentGaN-based semiconductorGaN-based laser device with mesa and ridge stripe
A GaN-based laser device having a GaN-based semiconductor stacked-layered structure, wherein said semiconductor stacked-layered structure includes a mesa portion and a ridge stripe, said mesa portion includes a light-emitting layer, said mesa portion has a pair of side surfaces ef-said mesai rtion tha t are parallel to a len g thwise direction of said rid g e stripe and are tilted titled with respect to a plane that is perpendicular to said light-emitting layer and parallel to the lengthwise direction of said rid g e stripe, said ridge stripe s trip is fermed di sp osed above said light-emitting layer so as to f or m be part of a stripe shap e d stripe-shaped waveguide, and a width of said ridge stri p e strip is smaller than a width of said mesa portion --and SVG 14020519.05-15-2014.HV₈EAPLJPXXIFW3.CLM.1.svg 0.49 6.5 Black and white
1. 2
  Dependent← claim 1GaN-based semiconductorGaN-based laser device with mesa and ridge stripe
  The GaN-based laser device according to claim 1, wherein the width of said mesa portion is decreased toward a top of the mesa portion
2. 3
  Dependent← claim 1GaN-based semiconductorGaN-based laser device with mesa and ridge stripe
  The GaN-based laser device according to claim 1, wherein each of said pair of the side surfaces of said mesa portion is tilted ti tled toward the ridge stripe at an angle of 15 degrees or more and less than 90 degrees with respect to said plane perpendicular to said light- emitting layer.
3. 4
  Dependent← claim 1GaN-based semiconductorGaN-based laser device with mesa and ridge stripe
  The GaN-based laser device according to claim 1, wherein the ridge stripe is diﬀerent from and stands on the mesa portion.
4. 5
  Dependent← claim 1GaN-based semiconductorGaN-based laser device with mesa and ridge stripe
  The GaN-based laser device according to claim 1, wherein the ridge stripe is made of semiconductor.
6
IndependentGaN-based semiconductorGaN-based laser device with trapezoidal mesa and ridge stripe
A GaN-based laser device comprising: a mesa portion extending in a longitudinal direction and comprising a plurality of semiconductor layers including a light-emitting layer; and a ridge stripe disposed on the mesa portion, made of semiconductor, and extending in the longitudinal direction, wherein in a sectional view of the laser device cut perpendicular to the longitudinal direction, the mesa portion has a shape of a trapezoid having parallel top and bottom sides and two inclined sides that connect the top and bottom sides and are inclined toward each other. 3 va-420279

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-based laser device with mesa and ridge stripe

GaN-based semiconductorridge stripe waveguide

GaN-based semiconductormesa with light emitting layer

substrate_or_basesubstrate or base

GaN-based laser device with trapezoidal mesa and ridge stripe

GaN-based semiconductorridge stripe

GaN-based semiconductortrapezoidal mesa with light emitting layer

Materials

Materials described outside the worked examples.

GaN-based semiconductor

Claimed Laser Device Material

Si-doped n-type GaN lower contact layer

GaN

Lower Contact Layer

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	390–420 nm	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Patent

Atlas literature

Patent

US 8,824,516

GaN-BASED LASER DEVICE

Toshiyuki KAWAKAMI

US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG. 11

FIG. 12

FIG. 13

FIG. 14

FIG. 15

FIG. 16

FIG. 17

FIG. 18

FIG. 19

FIG. 20

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 4 dependent

1
IndependentGaN-based semiconductorGaN-based laser device with mesa and ridge stripe
A GaN-based laser device having a GaN-based semiconductor stacked-layered structure, wherein said semiconductor stacked-layered structure includes a mesa portion and a ridge stripe, said mesa portion includes a light-emitting layer, said mesa portion has a pair of side surfaces ef-said mesai rtion tha t are parallel to a len g thwise direction of said rid g e stripe and are tilted titled with respect to a plane that is perpendicular to said light-emitting layer and parallel to the lengthwise direction of said rid g e stripe, said ridge stripe s trip is fermed di sp osed above said light-emitting layer so as to f or m be part of a stripe shap e d stripe-shaped waveguide, and a width of said ridge stri p e strip is smaller than a width of said mesa portion --and SVG 14020519.05-15-2014.HV₈EAPLJPXXIFW3.CLM.1.svg 0.49 6.5 Black and white
1. 2
  Dependent← claim 1GaN-based semiconductorGaN-based laser device with mesa and ridge stripe
  The GaN-based laser device according to claim 1, wherein the width of said mesa portion is decreased toward a top of the mesa portion
2. 3
  Dependent← claim 1GaN-based semiconductorGaN-based laser device with mesa and ridge stripe
  The GaN-based laser device according to claim 1, wherein each of said pair of the side surfaces of said mesa portion is tilted ti tled toward the ridge stripe at an angle of 15 degrees or more and less than 90 degrees with respect to said plane perpendicular to said light- emitting layer.
3. 4
  Dependent← claim 1GaN-based semiconductorGaN-based laser device with mesa and ridge stripe
  The GaN-based laser device according to claim 1, wherein the ridge stripe is diﬀerent from and stands on the mesa portion.
4. 5
  Dependent← claim 1GaN-based semiconductorGaN-based laser device with mesa and ridge stripe
  The GaN-based laser device according to claim 1, wherein the ridge stripe is made of semiconductor.
6
IndependentGaN-based semiconductorGaN-based laser device with trapezoidal mesa and ridge stripe
A GaN-based laser device comprising: a mesa portion extending in a longitudinal direction and comprising a plurality of semiconductor layers including a light-emitting layer; and a ridge stripe disposed on the mesa portion, made of semiconductor, and extending in the longitudinal direction, wherein in a sectional view of the laser device cut perpendicular to the longitudinal direction, the mesa portion has a shape of a trapezoid having parallel top and bottom sides and two inclined sides that connect the top and bottom sides and are inclined toward each other. 3 va-420279

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-based laser device with mesa and ridge stripe

GaN-based semiconductorridge stripe waveguide

GaN-based semiconductormesa with light emitting layer

substrate_or_basesubstrate or base

GaN-based laser device with trapezoidal mesa and ridge stripe

GaN-based semiconductorridge stripe

GaN-based semiconductortrapezoidal mesa with light emitting layer

Materials

Materials described outside the worked examples.

GaN-based semiconductor

Claimed Laser Device Material

Si-doped n-type GaN lower contact layer

GaN

Lower Contact Layer

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	390–420 nm	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.