Patent
US 9,441,311Growth Reactor for Gallium-Nitride Crystals Using Ammonia and Hydrogen Chloride
Tadao Hashimoto
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,441,311Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 An schematic drawing of H V PE reactor. 1) Carrier gas inlet -5- 2) Ammonia gas inlet 3) Hydrogen chloride gas inlet 4) Bottom flange of the main reactor …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-18 canceled
A hydride vapor phase epitaxy reactor for growing a group III -nitride crystalline material, comprising (a) a reactor body formed of a material compatible with reactants for growing the group I II -nitride crystalline material; (b) a first gas inlet for introducing a first reactant comprising a halide gas; (c) a second gas inlet for introducing a second reactant comprising ammonia; (d) a stand in a first reactor zone in a chamber of the reactor body to hold a substrate upon which the group I II -nitride crystalline material is grown; (e) a transition zone downstream of the stand; (f) a second reactor zone downstream of the transition zone, the second reactor zone having a larger cross-sectional area than a cross-sectional area of the first reactor zone; and (g) one or more heaters positioned and configured to heat the first reactor zone and the transition zone but not the second reactor zone to a temperature above the precipitation temperature of ammonium halide, such that the ammonium halide precipitates from a waste gas stream in the second reactor zone during operation, wherein the second reactor zone has a reservoir sufficiently large to collect settled precipitated ammonium halide; and wherein the reactor has plural plates with openings located between the first reactor zone and the reservoir, the openings of the plates are offset to not provide a direct optical path from the first reactor zone to the reservoir, and the plates are located in a position where the temperature is between 300°C to 700°C in operation. Page 2 of 8 Application No.: 14/285,350 Docket No.: SI XPO I-00 8USD IV₁
A hydride vapor phase epitaxy reactor according to claim 19 wherein the second reactor zone has a cross-sectional area perpendicular to a direction of gas flow that is sufficiently large to allow precipitated ammonium halide to settle and form a depleted exhaust gas.
A hydride vapor phase epitaxy reactor according to claim 19, wherein the hydride vapor phase epitaxy reactor is a vertical hydride vapor phase epitaxy reactor.
canceled
A hydride vapor phase epitaxy reactor for growing a group III-nitride crystalline material, comprising (a) a reactor body formed of a material compatible with reactants for growing the group III-nitride crystalline material: (b) a first gas inlet for introducing a first reactant comprising a halide gas (c) a second gas inlet for introducing a second reactant comprising ammonia (d) a stand in a first reactor zone in a chamber of the reactor body to hold a substrate upon which the group III-nitride crystalline material is grown (e) a transition zone downstream of the stand: (f) a second reactor zone downstream of the transition zone, the second reactor zone having a larger cross-sectional area than a cross-sectional area of the first reactor zone and Page 4 of 8 Application No.: 14/285,350 Docket No.: SI XPO I -008USD IV₁ (g) one or more heaters positioned and configured to heat the first reactor zone and the transition zone but not the second reactor zone to a temperature above the precipitation temperature of ammonium halide, such that the ammonium halide precipitates from a waste gas stream in the second reactor zone during operation wherein the second reactor zone has a reservoir sufficiently large to collect settled precipitated ammonium halide, and A hydride vapor phase epitaxy reactor according to claim 21, wherein the reservoir has more than one isolation valve.
A hydride vapor phase epitaxy reactor for growing a group III- nitride crystalline material, comprising (a) a reactor body formed of a material compatible with reactants for growing the group I II -nitride crystalline material; (b) a first gas inlet for introducing a first reactant comprising a halide gas; (c) a second gas inlet for introducing a second reactant comprising ammonia; (d) a stand in a first reactor zone in a chamber of the reactor body to hold a substrate upon which the group I II -nitride crystalline material is grown; (e) a transition zone downstream of the stand; (f) a second reactor zone downstream of the transition zone, the second reactor zone having a larger cross-sectional area than a cross-sectional area of the first reactor zone; and (g) one or more heaters positioned and configured to heat the first reactor zone and the transition zone but not the second reactor zone to a temperature above the precipitation temperature of ammonium halide, such that the ammonium halide precipitates from a waste gas stream in the second reactor zone during operation, wherein the second reactor zone has a cross-sectional area perpendicular to a direction of gas flow that is sufficiently large to allow precipitated ammonium halide to settle and form a depleted exhaust gas, wherein the second reactor zone has a reservoir sufficiently large to collect settled precipitated ammonium halide and wherein Page 3 of 8 Application No.: 14/285,350 Docket No.: SIXPOI-00 8USD IV₁ (h) the first reactor zone is constructed with a quartz tube, (i) the reservoir is constructed as a metal chamber having a wall, (j) the quartz tube and the metal chamber are connected with an O -ring-sealed flange, (k) the location of the O -ring is separated from the waste gas stream by a sufficient distance that the temperature of the wall touching the waste gas stream is maintained higher than 200 C in operation.
A hydride vapor phase epitaxy reactor according to claim 22, wherein the wall touching the waste gas stream is maintained higher than 350 C in operation.
A hydride vapor phase epitaxy reactor according to claim 22, wherein the O ring is cooled with air or fluid.
A hydride vapor phase epitaxy reactor according to claim 22, wherein the hydride vapor phase epitaxy reactor is a vertical hydride vapor phase epitaxy reactor.
canceled
canceled
A hydride vapor phase epitaxy reactor according phase epitaxy reactor is a vertical hydride vapor No.: 14/285,350 Docket No.: S I XPO I-00 8USD
A hydride vapor phase epitaxy reactor according phase epitaxy reactor is a vertical hydride vapor
Layer stacks claimed or described, ordered top of device to substrate.
HVPE reactor with baffled second zone and reservoir (claim 19)
No layer stack recorded.
HVPE reactor with quartz tube first zone and metal reservoir chamber (claim 22)
No layer stack recorded.
HVPE reactor with multiple isolation valves on reservoir (claim 25)
No layer stack recorded.
Materials described outside the worked examples.
group III-nitride crystalline material
halide gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | ≥ 24 hours | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,441,311Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 An schematic drawing of H V PE reactor. 1) Carrier gas inlet -5- 2) Ammonia gas inlet 3) Hydrogen chloride gas inlet 4) Bottom flange of the main reactor …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-18 canceled
A hydride vapor phase epitaxy reactor for growing a group III -nitride crystalline material, comprising (a) a reactor body formed of a material compatible with reactants for growing the group I II -nitride crystalline material; (b) a first gas inlet for introducing a first reactant comprising a halide gas; (c) a second gas inlet for introducing a second reactant comprising ammonia; (d) a stand in a first reactor zone in a chamber of the reactor body to hold a substrate upon which the group I II -nitride crystalline material is grown; (e) a transition zone downstream of the stand; (f) a second reactor zone downstream of the transition zone, the second reactor zone having a larger cross-sectional area than a cross-sectional area of the first reactor zone; and (g) one or more heaters positioned and configured to heat the first reactor zone and the transition zone but not the second reactor zone to a temperature above the precipitation temperature of ammonium halide, such that the ammonium halide precipitates from a waste gas stream in the second reactor zone during operation, wherein the second reactor zone has a reservoir sufficiently large to collect settled precipitated ammonium halide; and wherein the reactor has plural plates with openings located between the first reactor zone and the reservoir, the openings of the plates are offset to not provide a direct optical path from the first reactor zone to the reservoir, and the plates are located in a position where the temperature is between 300°C to 700°C in operation. Page 2 of 8 Application No.: 14/285,350 Docket No.: SI XPO I-00 8USD IV₁
A hydride vapor phase epitaxy reactor according to claim 19 wherein the second reactor zone has a cross-sectional area perpendicular to a direction of gas flow that is sufficiently large to allow precipitated ammonium halide to settle and form a depleted exhaust gas.
A hydride vapor phase epitaxy reactor according to claim 19, wherein the hydride vapor phase epitaxy reactor is a vertical hydride vapor phase epitaxy reactor.
canceled
A hydride vapor phase epitaxy reactor for growing a group III-nitride crystalline material, comprising (a) a reactor body formed of a material compatible with reactants for growing the group III-nitride crystalline material: (b) a first gas inlet for introducing a first reactant comprising a halide gas (c) a second gas inlet for introducing a second reactant comprising ammonia (d) a stand in a first reactor zone in a chamber of the reactor body to hold a substrate upon which the group III-nitride crystalline material is grown (e) a transition zone downstream of the stand: (f) a second reactor zone downstream of the transition zone, the second reactor zone having a larger cross-sectional area than a cross-sectional area of the first reactor zone and Page 4 of 8 Application No.: 14/285,350 Docket No.: SI XPO I -008USD IV₁ (g) one or more heaters positioned and configured to heat the first reactor zone and the transition zone but not the second reactor zone to a temperature above the precipitation temperature of ammonium halide, such that the ammonium halide precipitates from a waste gas stream in the second reactor zone during operation wherein the second reactor zone has a reservoir sufficiently large to collect settled precipitated ammonium halide, and A hydride vapor phase epitaxy reactor according to claim 21, wherein the reservoir has more than one isolation valve.
A hydride vapor phase epitaxy reactor for growing a group III- nitride crystalline material, comprising (a) a reactor body formed of a material compatible with reactants for growing the group I II -nitride crystalline material; (b) a first gas inlet for introducing a first reactant comprising a halide gas; (c) a second gas inlet for introducing a second reactant comprising ammonia; (d) a stand in a first reactor zone in a chamber of the reactor body to hold a substrate upon which the group I II -nitride crystalline material is grown; (e) a transition zone downstream of the stand; (f) a second reactor zone downstream of the transition zone, the second reactor zone having a larger cross-sectional area than a cross-sectional area of the first reactor zone; and (g) one or more heaters positioned and configured to heat the first reactor zone and the transition zone but not the second reactor zone to a temperature above the precipitation temperature of ammonium halide, such that the ammonium halide precipitates from a waste gas stream in the second reactor zone during operation, wherein the second reactor zone has a cross-sectional area perpendicular to a direction of gas flow that is sufficiently large to allow precipitated ammonium halide to settle and form a depleted exhaust gas, wherein the second reactor zone has a reservoir sufficiently large to collect settled precipitated ammonium halide and wherein Page 3 of 8 Application No.: 14/285,350 Docket No.: SIXPOI-00 8USD IV₁ (h) the first reactor zone is constructed with a quartz tube, (i) the reservoir is constructed as a metal chamber having a wall, (j) the quartz tube and the metal chamber are connected with an O -ring-sealed flange, (k) the location of the O -ring is separated from the waste gas stream by a sufficient distance that the temperature of the wall touching the waste gas stream is maintained higher than 200 C in operation.
A hydride vapor phase epitaxy reactor according to claim 22, wherein the wall touching the waste gas stream is maintained higher than 350 C in operation.
A hydride vapor phase epitaxy reactor according to claim 22, wherein the O ring is cooled with air or fluid.
A hydride vapor phase epitaxy reactor according to claim 22, wherein the hydride vapor phase epitaxy reactor is a vertical hydride vapor phase epitaxy reactor.
canceled
canceled
A hydride vapor phase epitaxy reactor according phase epitaxy reactor is a vertical hydride vapor No.: 14/285,350 Docket No.: S I XPO I-00 8USD
A hydride vapor phase epitaxy reactor according phase epitaxy reactor is a vertical hydride vapor
Layer stacks claimed or described, ordered top of device to substrate.
HVPE reactor with baffled second zone and reservoir (claim 19)
No layer stack recorded.
HVPE reactor with quartz tube first zone and metal reservoir chamber (claim 22)
No layer stack recorded.
HVPE reactor with multiple isolation valves on reservoir (claim 25)
No layer stack recorded.
Materials described outside the worked examples.
group III-nitride crystalline material
halide gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | ≥ 24 hours | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,441,311Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 An schematic drawing of H V PE reactor. 1) Carrier gas inlet -5- 2) Ammonia gas inlet 3) Hydrogen chloride gas inlet 4) Bottom flange of the main reactor …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-18 canceled
A hydride vapor phase epitaxy reactor for growing a group III -nitride crystalline material, comprising (a) a reactor body formed of a material compatible with reactants for growing the group I II -nitride crystalline material; (b) a first gas inlet for introducing a first reactant comprising a halide gas; (c) a second gas inlet for introducing a second reactant comprising ammonia; (d) a stand in a first reactor zone in a chamber of the reactor body to hold a substrate upon which the group I II -nitride crystalline material is grown; (e) a transition zone downstream of the stand; (f) a second reactor zone downstream of the transition zone, the second reactor zone having a larger cross-sectional area than a cross-sectional area of the first reactor zone; and (g) one or more heaters positioned and configured to heat the first reactor zone and the transition zone but not the second reactor zone to a temperature above the precipitation temperature of ammonium halide, such that the ammonium halide precipitates from a waste gas stream in the second reactor zone during operation, wherein the second reactor zone has a reservoir sufficiently large to collect settled precipitated ammonium halide; and wherein the reactor has plural plates with openings located between the first reactor zone and the reservoir, the openings of the plates are offset to not provide a direct optical path from the first reactor zone to the reservoir, and the plates are located in a position where the temperature is between 300°C to 700°C in operation. Page 2 of 8 Application No.: 14/285,350 Docket No.: SI XPO I-00 8USD IV₁
A hydride vapor phase epitaxy reactor according to claim 19 wherein the second reactor zone has a cross-sectional area perpendicular to a direction of gas flow that is sufficiently large to allow precipitated ammonium halide to settle and form a depleted exhaust gas.
A hydride vapor phase epitaxy reactor according to claim 19, wherein the hydride vapor phase epitaxy reactor is a vertical hydride vapor phase epitaxy reactor.
canceled
A hydride vapor phase epitaxy reactor for growing a group III-nitride crystalline material, comprising (a) a reactor body formed of a material compatible with reactants for growing the group III-nitride crystalline material: (b) a first gas inlet for introducing a first reactant comprising a halide gas (c) a second gas inlet for introducing a second reactant comprising ammonia (d) a stand in a first reactor zone in a chamber of the reactor body to hold a substrate upon which the group III-nitride crystalline material is grown (e) a transition zone downstream of the stand: (f) a second reactor zone downstream of the transition zone, the second reactor zone having a larger cross-sectional area than a cross-sectional area of the first reactor zone and Page 4 of 8 Application No.: 14/285,350 Docket No.: SI XPO I -008USD IV₁ (g) one or more heaters positioned and configured to heat the first reactor zone and the transition zone but not the second reactor zone to a temperature above the precipitation temperature of ammonium halide, such that the ammonium halide precipitates from a waste gas stream in the second reactor zone during operation wherein the second reactor zone has a reservoir sufficiently large to collect settled precipitated ammonium halide, and A hydride vapor phase epitaxy reactor according to claim 21, wherein the reservoir has more than one isolation valve.
A hydride vapor phase epitaxy reactor for growing a group III- nitride crystalline material, comprising (a) a reactor body formed of a material compatible with reactants for growing the group I II -nitride crystalline material; (b) a first gas inlet for introducing a first reactant comprising a halide gas; (c) a second gas inlet for introducing a second reactant comprising ammonia; (d) a stand in a first reactor zone in a chamber of the reactor body to hold a substrate upon which the group I II -nitride crystalline material is grown; (e) a transition zone downstream of the stand; (f) a second reactor zone downstream of the transition zone, the second reactor zone having a larger cross-sectional area than a cross-sectional area of the first reactor zone; and (g) one or more heaters positioned and configured to heat the first reactor zone and the transition zone but not the second reactor zone to a temperature above the precipitation temperature of ammonium halide, such that the ammonium halide precipitates from a waste gas stream in the second reactor zone during operation, wherein the second reactor zone has a cross-sectional area perpendicular to a direction of gas flow that is sufficiently large to allow precipitated ammonium halide to settle and form a depleted exhaust gas, wherein the second reactor zone has a reservoir sufficiently large to collect settled precipitated ammonium halide and wherein Page 3 of 8 Application No.: 14/285,350 Docket No.: SIXPOI-00 8USD IV₁ (h) the first reactor zone is constructed with a quartz tube, (i) the reservoir is constructed as a metal chamber having a wall, (j) the quartz tube and the metal chamber are connected with an O -ring-sealed flange, (k) the location of the O -ring is separated from the waste gas stream by a sufficient distance that the temperature of the wall touching the waste gas stream is maintained higher than 200 C in operation.
A hydride vapor phase epitaxy reactor according to claim 22, wherein the wall touching the waste gas stream is maintained higher than 350 C in operation.
A hydride vapor phase epitaxy reactor according to claim 22, wherein the O ring is cooled with air or fluid.
A hydride vapor phase epitaxy reactor according to claim 22, wherein the hydride vapor phase epitaxy reactor is a vertical hydride vapor phase epitaxy reactor.
canceled
canceled
A hydride vapor phase epitaxy reactor according phase epitaxy reactor is a vertical hydride vapor No.: 14/285,350 Docket No.: S I XPO I-00 8USD
A hydride vapor phase epitaxy reactor according phase epitaxy reactor is a vertical hydride vapor
Layer stacks claimed or described, ordered top of device to substrate.
HVPE reactor with baffled second zone and reservoir (claim 19)
No layer stack recorded.
HVPE reactor with quartz tube first zone and metal reservoir chamber (claim 22)
No layer stack recorded.
HVPE reactor with multiple isolation valves on reservoir (claim 25)
No layer stack recorded.
Materials described outside the worked examples.
group III-nitride crystalline material
halide gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | ≥ 24 hours | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,441,311Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 An schematic drawing of H V PE reactor. 1) Carrier gas inlet -5- 2) Ammonia gas inlet 3) Hydrogen chloride gas inlet 4) Bottom flange of the main reactor …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-18 canceled
A hydride vapor phase epitaxy reactor for growing a group III -nitride crystalline material, comprising (a) a reactor body formed of a material compatible with reactants for growing the group I II -nitride crystalline material; (b) a first gas inlet for introducing a first reactant comprising a halide gas; (c) a second gas inlet for introducing a second reactant comprising ammonia; (d) a stand in a first reactor zone in a chamber of the reactor body to hold a substrate upon which the group I II -nitride crystalline material is grown; (e) a transition zone downstream of the stand; (f) a second reactor zone downstream of the transition zone, the second reactor zone having a larger cross-sectional area than a cross-sectional area of the first reactor zone; and (g) one or more heaters positioned and configured to heat the first reactor zone and the transition zone but not the second reactor zone to a temperature above the precipitation temperature of ammonium halide, such that the ammonium halide precipitates from a waste gas stream in the second reactor zone during operation, wherein the second reactor zone has a reservoir sufficiently large to collect settled precipitated ammonium halide; and wherein the reactor has plural plates with openings located between the first reactor zone and the reservoir, the openings of the plates are offset to not provide a direct optical path from the first reactor zone to the reservoir, and the plates are located in a position where the temperature is between 300°C to 700°C in operation. Page 2 of 8 Application No.: 14/285,350 Docket No.: SI XPO I-00 8USD IV₁
A hydride vapor phase epitaxy reactor according to claim 19 wherein the second reactor zone has a cross-sectional area perpendicular to a direction of gas flow that is sufficiently large to allow precipitated ammonium halide to settle and form a depleted exhaust gas.
A hydride vapor phase epitaxy reactor according to claim 19, wherein the hydride vapor phase epitaxy reactor is a vertical hydride vapor phase epitaxy reactor.
canceled
A hydride vapor phase epitaxy reactor for growing a group III-nitride crystalline material, comprising (a) a reactor body formed of a material compatible with reactants for growing the group III-nitride crystalline material: (b) a first gas inlet for introducing a first reactant comprising a halide gas (c) a second gas inlet for introducing a second reactant comprising ammonia (d) a stand in a first reactor zone in a chamber of the reactor body to hold a substrate upon which the group III-nitride crystalline material is grown (e) a transition zone downstream of the stand: (f) a second reactor zone downstream of the transition zone, the second reactor zone having a larger cross-sectional area than a cross-sectional area of the first reactor zone and Page 4 of 8 Application No.: 14/285,350 Docket No.: SI XPO I -008USD IV₁ (g) one or more heaters positioned and configured to heat the first reactor zone and the transition zone but not the second reactor zone to a temperature above the precipitation temperature of ammonium halide, such that the ammonium halide precipitates from a waste gas stream in the second reactor zone during operation wherein the second reactor zone has a reservoir sufficiently large to collect settled precipitated ammonium halide, and A hydride vapor phase epitaxy reactor according to claim 21, wherein the reservoir has more than one isolation valve.
A hydride vapor phase epitaxy reactor for growing a group III- nitride crystalline material, comprising (a) a reactor body formed of a material compatible with reactants for growing the group I II -nitride crystalline material; (b) a first gas inlet for introducing a first reactant comprising a halide gas; (c) a second gas inlet for introducing a second reactant comprising ammonia; (d) a stand in a first reactor zone in a chamber of the reactor body to hold a substrate upon which the group I II -nitride crystalline material is grown; (e) a transition zone downstream of the stand; (f) a second reactor zone downstream of the transition zone, the second reactor zone having a larger cross-sectional area than a cross-sectional area of the first reactor zone; and (g) one or more heaters positioned and configured to heat the first reactor zone and the transition zone but not the second reactor zone to a temperature above the precipitation temperature of ammonium halide, such that the ammonium halide precipitates from a waste gas stream in the second reactor zone during operation, wherein the second reactor zone has a cross-sectional area perpendicular to a direction of gas flow that is sufficiently large to allow precipitated ammonium halide to settle and form a depleted exhaust gas, wherein the second reactor zone has a reservoir sufficiently large to collect settled precipitated ammonium halide and wherein Page 3 of 8 Application No.: 14/285,350 Docket No.: SIXPOI-00 8USD IV₁ (h) the first reactor zone is constructed with a quartz tube, (i) the reservoir is constructed as a metal chamber having a wall, (j) the quartz tube and the metal chamber are connected with an O -ring-sealed flange, (k) the location of the O -ring is separated from the waste gas stream by a sufficient distance that the temperature of the wall touching the waste gas stream is maintained higher than 200 C in operation.
A hydride vapor phase epitaxy reactor according to claim 22, wherein the wall touching the waste gas stream is maintained higher than 350 C in operation.
A hydride vapor phase epitaxy reactor according to claim 22, wherein the O ring is cooled with air or fluid.
A hydride vapor phase epitaxy reactor according to claim 22, wherein the hydride vapor phase epitaxy reactor is a vertical hydride vapor phase epitaxy reactor.
canceled
canceled
A hydride vapor phase epitaxy reactor according phase epitaxy reactor is a vertical hydride vapor No.: 14/285,350 Docket No.: S I XPO I-00 8USD
A hydride vapor phase epitaxy reactor according phase epitaxy reactor is a vertical hydride vapor
Layer stacks claimed or described, ordered top of device to substrate.
HVPE reactor with baffled second zone and reservoir (claim 19)
No layer stack recorded.
HVPE reactor with quartz tube first zone and metal reservoir chamber (claim 22)
No layer stack recorded.
HVPE reactor with multiple isolation valves on reservoir (claim 25)
No layer stack recorded.
Materials described outside the worked examples.
group III-nitride crystalline material
halide gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | ≥ 24 hours | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
ammonium halide
quartz
SiO₂
metal (chamber wall)
gallium nitride
GaN
ammonia
NH₃
hydrogen chloride
HCl
ammonium chloride
NH₄Cl
pyrolytic boron nitride
pBN
| — |
ammonium halide
quartz
SiO₂
metal (chamber wall)
gallium nitride
GaN
ammonia
NH₃
hydrogen chloride
HCl
ammonium chloride
NH₄Cl
pyrolytic boron nitride
pBN
| — |
ammonium halide
quartz
SiO₂
metal (chamber wall)
gallium nitride
GaN
ammonia
NH₃
hydrogen chloride
HCl
ammonium chloride
NH₄Cl
pyrolytic boron nitride
pBN
| — |
ammonium halide
quartz
SiO₂
metal (chamber wall)
gallium nitride
GaN
ammonia
NH₃
hydrogen chloride
HCl
ammonium chloride
NH₄Cl
pyrolytic boron nitride
pBN
| — |