(Cu rr ently Amended) A system for epitaxial deposition of a monocrystalline Group III-V semiconductor material, which comprises: a source of a Group III precursor for use as one reactant, a source of Group V component for use as another reactant, and a reaction chamber for receiving the reactants for reaction to form the semiconductor material while generating exhaust gases, the reaction chamber including an outlet and exhaust conduit for removing exhaust gases, including unreacted Group III precursor, unreacted Group V component and reaction byproducts, from the reaction chamber; a pressure control system associated with the outlet and exhaust conduit that includes a pump that is operatively associated with the exhaust conduit to maintain a reduced pressure therein to assist in removing the exhaust gases from the reactor; and a temperature control system operatively associated with the pressure control system for avoiding condensation of the exhaust gases, wherein the temperature control system includes a heating device for heating the pressure control system and the exhaust gases to a temperature that reduces condensation of the exhaust gases in the outlet manifold, exhaust gas lines and pressure control system and to a waste abatement system, and wherein the outlet and exhaust conduit provide a free and unobstructed flow of the exhaust gases from the reaction chamber to the waste abatement system, and the heatin g device is arran g ed for heatin g the pressure control system, outlet and exhaust conduit through its entire length from the reaction chamber to the waste abatement system to temperatures between about 130 ° C and about 160 ° C to prevent condensation of the exhaust gases therein, thus enhancing enhanees manufacture of the semiconductor material. 2. to 4.

canceled

canceled

canceled

(Cu rr ently Amended) A system for epitaxial deposition of a monocrystalline Group III-V semiconductor material, which comprises: a source of a Group III precursor for use as one reactant, a source of Group V component for use as another reactant, and a reaction chamber for receiving the reactants for reaction to form the semiconductor material while generating exhaust gases, the reaction chamber including an outlet and exhaust conduit for removing exhaust gases, including unreacted Group III precursor, unreacted Group V -4- component and reaction byproducts, from the reaction chamber, wherein the outlet and exhaust conduit provide a free and unobstructed flow of the exhaust gases from the reaction chamber to a waste abatement system; a pressure control system associated with the outlet and exhaust conduit to maintain a reduced pressure therein to assist in removing the exhaust gases from the reactor; and a temperature control system operatively associated with the pressure control system for avoiding condensation of the exhaust gases, wherein the temperature control system includes a heating device for heating the pressure control system and the exhaust gases through the entire length of the exhaust conduit from the reaction chamber to the waste abatement s ystem to a temperature between about 130 ° C and about 160 ° C to reduce condensation of the exhaust gases in the outlet manifold, exhaust gas lines and pressure control system and thus enhance manufacture of the semiconductor material, wherein the heating device provides heating from the exit of the exhaust gases from the reaction chamber and until the entrance of the exhaust gases into the waste abatement system.

(Cu rr ently Amended) A system for epitaxial deposition of a monocrystalline Group III-V semiconductor material, which comprises: a source of a Group III precursor for use as one reactant, a source of Group V component for use as another reactant, and a reaction chamber for receiving the reactants for reaction to form the semiconductor material while generating exhaust gases, the reaction chamber including an outlet and exhaust conduit for removing exhaust gases, including unreacted Group III precursor, unreacted Group V component and reaction byproducts, from the reaction chamber; a pressure control system associated with the outlet and exhaust conduit that includes a pump that is operatively associated with the exhaust conduit to maintain a reduced pressure therein to assist in removing the exhaust gases from the reactor; and a temperature control system operatively associated with the pressure control system for avoiding condensation of the exhaust gases, wherein the temperature control system includes a heating device for heating the pressure control system and the exhaust gases to a temperature that reduces condensation of the exhaust gases in the outlet manifold, exhaust gas lines and pressure control system and to a waste abatement system, and wherein the outlet and exhaust conduit provide a free and unobstructed flow of the exhaust gases from the reaction chamber to the waste abatement system, and the heatin g device is arran g ed for heatin g the pressure control system, outlet and exhaust conduit through its entire length from the reaction chamber to the waste abatement system to temperatures between about 130 ° C and about 160 ° C to prevent condensation of the exhaust gases therein, thus enhancing enhanees manufacture of the semiconductor material. 2. to 4.

canceled

canceled

canceled

(Cu rr ently Amended) A system for epitaxial deposition of a monocrystalline Group III-V semiconductor material, which comprises: a source of a Group III precursor for use as one reactant, a source of Group V component for use as another reactant, and a reaction chamber for receiving the reactants for reaction to form the semiconductor material while generating exhaust gases, the reaction chamber including an outlet and exhaust conduit for removing exhaust gases, including unreacted Group III precursor, unreacted Group V -4- component and reaction byproducts, from the reaction chamber, wherein the outlet and exhaust conduit provide a free and unobstructed flow of the exhaust gases from the reaction chamber to a waste abatement system; a pressure control system associated with the outlet and exhaust conduit to maintain a reduced pressure therein to assist in removing the exhaust gases from the reactor; and a temperature control system operatively associated with the pressure control system for avoiding condensation of the exhaust gases, wherein the temperature control system includes a heating device for heating the pressure control system and the exhaust gases through the entire length of the exhaust conduit from the reaction chamber to the waste abatement s ystem to a temperature between about 130 ° C and about 160 ° C to reduce condensation of the exhaust gases in the outlet manifold, exhaust gas lines and pressure control system and thus enhance manufacture of the semiconductor material, wherein the heating device provides heating from the exit of the exhaust gases from the reaction chamber and until the entrance of the exhaust gases into the waste abatement system.

(Cu rr ently Amended) A system for epitaxial deposition of a monocrystalline Group III-V semiconductor material, which comprises: a source of a Group III precursor for use as one reactant, a source of Group V component for use as another reactant, and a reaction chamber for receiving the reactants for reaction to form the semiconductor material while generating exhaust gases, the reaction chamber including an outlet and exhaust conduit for removing exhaust gases, including unreacted Group III precursor, unreacted Group V component and reaction byproducts, from the reaction chamber; a pressure control system associated with the outlet and exhaust conduit that includes a pump that is operatively associated with the exhaust conduit to maintain a reduced pressure therein to assist in removing the exhaust gases from the reactor; and a temperature control system operatively associated with the pressure control system for avoiding condensation of the exhaust gases, wherein the temperature control system includes a heating device for heating the pressure control system and the exhaust gases to a temperature that reduces condensation of the exhaust gases in the outlet manifold, exhaust gas lines and pressure control system and to a waste abatement system, and wherein the outlet and exhaust conduit provide a free and unobstructed flow of the exhaust gases from the reaction chamber to the waste abatement system, and the heatin g device is arran g ed for heatin g the pressure control system, outlet and exhaust conduit through its entire length from the reaction chamber to the waste abatement system to temperatures between about 130 ° C and about 160 ° C to prevent condensation of the exhaust gases therein, thus enhancing enhanees manufacture of the semiconductor material. 2. to 4.

canceled

canceled

canceled

(Cu rr ently Amended) A system for epitaxial deposition of a monocrystalline Group III-V semiconductor material, which comprises: a source of a Group III precursor for use as one reactant, a source of Group V component for use as another reactant, and a reaction chamber for receiving the reactants for reaction to form the semiconductor material while generating exhaust gases, the reaction chamber including an outlet and exhaust conduit for removing exhaust gases, including unreacted Group III precursor, unreacted Group V -4- component and reaction byproducts, from the reaction chamber, wherein the outlet and exhaust conduit provide a free and unobstructed flow of the exhaust gases from the reaction chamber to a waste abatement system; a pressure control system associated with the outlet and exhaust conduit to maintain a reduced pressure therein to assist in removing the exhaust gases from the reactor; and a temperature control system operatively associated with the pressure control system for avoiding condensation of the exhaust gases, wherein the temperature control system includes a heating device for heating the pressure control system and the exhaust gases through the entire length of the exhaust conduit from the reaction chamber to the waste abatement s ystem to a temperature between about 130 ° C and about 160 ° C to reduce condensation of the exhaust gases in the outlet manifold, exhaust gas lines and pressure control system and thus enhance manufacture of the semiconductor material, wherein the heating device provides heating from the exit of the exhaust gases from the reaction chamber and until the entrance of the exhaust gases into the waste abatement system.

(Cu rr ently Amended) A system for epitaxial deposition of a monocrystalline Group III-V semiconductor material, which comprises: a source of a Group III precursor for use as one reactant, a source of Group V component for use as another reactant, and a reaction chamber for receiving the reactants for reaction to form the semiconductor material while generating exhaust gases, the reaction chamber including an outlet and exhaust conduit for removing exhaust gases, including unreacted Group III precursor, unreacted Group V component and reaction byproducts, from the reaction chamber; a pressure control system associated with the outlet and exhaust conduit that includes a pump that is operatively associated with the exhaust conduit to maintain a reduced pressure therein to assist in removing the exhaust gases from the reactor; and a temperature control system operatively associated with the pressure control system for avoiding condensation of the exhaust gases, wherein the temperature control system includes a heating device for heating the pressure control system and the exhaust gases to a temperature that reduces condensation of the exhaust gases in the outlet manifold, exhaust gas lines and pressure control system and to a waste abatement system, and wherein the outlet and exhaust conduit provide a free and unobstructed flow of the exhaust gases from the reaction chamber to the waste abatement system, and the heatin g device is arran g ed for heatin g the pressure control system, outlet and exhaust conduit through its entire length from the reaction chamber to the waste abatement system to temperatures between about 130 ° C and about 160 ° C to prevent condensation of the exhaust gases therein, thus enhancing enhanees manufacture of the semiconductor material. 2. to 4.

canceled

canceled

canceled

(Cu rr ently Amended) A system for epitaxial deposition of a monocrystalline Group III-V semiconductor material, which comprises: a source of a Group III precursor for use as one reactant, a source of Group V component for use as another reactant, and a reaction chamber for receiving the reactants for reaction to form the semiconductor material while generating exhaust gases, the reaction chamber including an outlet and exhaust conduit for removing exhaust gases, including unreacted Group III precursor, unreacted Group V -4- component and reaction byproducts, from the reaction chamber, wherein the outlet and exhaust conduit provide a free and unobstructed flow of the exhaust gases from the reaction chamber to a waste abatement system; a pressure control system associated with the outlet and exhaust conduit to maintain a reduced pressure therein to assist in removing the exhaust gases from the reactor; and a temperature control system operatively associated with the pressure control system for avoiding condensation of the exhaust gases, wherein the temperature control system includes a heating device for heating the pressure control system and the exhaust gases through the entire length of the exhaust conduit from the reaction chamber to the waste abatement s ystem to a temperature between about 130 ° C and about 160 ° C to reduce condensation of the exhaust gases in the outlet manifold, exhaust gas lines and pressure control system and thus enhance manufacture of the semiconductor material, wherein the heating device provides heating from the exit of the exhaust gases from the reaction chamber and until the entrance of the exhaust gases into the waste abatement system.