Patent
Atlas literature
Patent
US 10,604,865Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B show crystal growth frame structures according to embodiments of the present disclosure. [0015]
FIG. 2C show crystal growth seed rack structures according to embodiments of the present disclosure. [0016]
FIG. 3 B are simplified diagrams illustrating processing methods for crystal growth apparatus according to embodiments of the present disclosure. [0017]
FIG. 4 B are simplified diagrams illustrating crystal growth processes according to embodiments of the present disclosure. [0018]
FIG. 5 is a simplified diagram of flow chart illustrating a crystal growth process according to an embodiment of the present disclosure. [0019]
FIG. 6C are simplified diagrams illustrating methods for growth of thick boules and subsequent wafering according to embodiments of the present disclosure. …
FIG. 7 is a simplified diagram illustrating the crystallographic misorientation between two adjacent wafer- bonded crystals according to an embodiment of the …
FIG. 8 is a simplified diagram showing bi-faceted growth of a semipolar orientation intermediate between two stable growth orientation, according to embodiments …
FIG. 9 is a simplified illustrating a method for growth of thick boules and subsequent wafering according to embodiments of the present disclosure. [0023]
FIG. 10 is a simplified diagram of an apparatus for a crystal growth process according to embodiments of the present disclosure. [0024]
FIG. 11 is a flow chart illustrating a crystal growth process according to embodiments of the present disclosure. [0025]
FIG. 12C are simplified diagrams showing a range of crystallographic orientations suitable for seed crystals for semipolar crystal growth as used in certain …
FIG. 13 is a photograph of a grown boule according to an embodiment of the present disclosure. [0027]
FIG. 14 is a chart depicting a process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules, according to an embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a boule used to form one or more single crystal substrates, comprising performing a crystal growth process on one or more seed crystals to form one or more boules, wherein the one or more seed crystals each have a first crystallographic orientation on a first surface, the first surface of each of the one or more seed crystals includes parallel features that are: formed on the first surface of or within each of the one or more seed crystals; or formed between two or more tiled crystals that form a mosaic of tiled crystals, [[and]] a first growth facet[[s]] and a second g rowth facet form between the parallel features as crystal g rowth occurs on the one or more seed crystals durin q the crystal q rowth process, wherein the first g rowth facet has a second crystallographic orientation and the second q rowth facet has a third crystallographic orientation, and exposed surfaces of the g rowin g crystal do not include the first crystallographic orientation, and wherein each of the second crystallographic orientation and the third crystallographic orientation are oblique with respect to the first crystallographic orientation, and the first crystallographic orientation, the second crystallographic orientation, and the third crystallographic orientation are each different families of cr y stallo g raphic orientations. Previously presented
[[1.]] 2 The method of claim 1, wherein the parallel features comprise grooves on the first surface of each of the one or more seed crystals and are formed by sawing, dry etching, reactive ion etching, wet etching, laser scribing, or grinding. Currently amended
The method of claim 1, wherein the parallel features comprise mask lines formed on the first surface of each of the one or more seed crystals, the mask lines comprising at least one of nickel, chromium, titanium, gold, molybdenum, tungsten, tantalum, niobium, rhenium, platinum, rhodium, ruthenium, silver, Si O 2, or SiN x. Original
The method of claim 1, wherein the parallel features comprise gaps between the tiled crystals that form the mosaic of tiled crystals, a polar misorientation angle between adjacent tiled crystals being less than 0.5 degree and an azimuthal misorientation angle between adjacent tiled crystals being less than 1 degree. Original
The method of claim 1, wherein the parallel features have a period that is between about 0.01 millimeter and about 10 centimeters. Original
The method of claim 1, wherein the one or more seed crystals and the boule comprise gallium nitride having a wurtzite structure and the first crystallographic orientation is angled by at least about 5 degrees from an m -plane and from a c-plane of said wurtzite structure. Original
The method of claim 1, wherein the crystal growth process is performed using an ammonothermal crystal growth method at a temperature above about 400 degrees Celsius. Original
The method of claim 1, wherein the crystal growth process is performed using a hydride vapor phase epitaxy (HVPE) crystal growth method at a temperature above about 900 degrees. Original
The method of claim 1, wherein the crystal growth process is performed using a flux method. Original
The method of claim 1, further comprising slicing the boule formed during the crystal growth process to form two or more single crystal substrates, wherein the two or more single crystal substrates have a crystallographic orientation within 3 degrees of the first crystallographic orientation. Original
The method of claim 1, wherein the first and second growth facets, once formed, persist throughout the duration of the crystal growth process and no growth facets having said first crystallographic orientation appear after said first surface is overgrown. New
Layer stacks claimed or described, ordered top of device to substrate.
semipolar GaN boule
single crystal semipolar GaN substrate
Materials described outside the worked examples.
gallium nitride
GaN
mask line material
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.9–2.2 mm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
METHOD FOR PREPARING GALLIUM NITRIDE (GAN) SINGLE-CRYSTAL SUBSTRATE WITH EDGE METAL MASK TECHNOLOGY
METHOD FOR RINSING COMPOUND SEMICONDUCTOR, SOLUTION FOR RINSING COMPOUND SEMICONDUCTOR CONTAINING GALLIUM AS CONSTITUENT ELEMENT, METHOD FOR FABRICATING COMPOUND SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING GALLIUM NITRIDE SUBSTRATE, AND GALLIUM NITRIDE SUBSTRATE
Patent
Atlas literature
Patent
US 10,604,865Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B show crystal growth frame structures according to embodiments of the present disclosure. [0015]
FIG. 2C show crystal growth seed rack structures according to embodiments of the present disclosure. [0016]
FIG. 3 B are simplified diagrams illustrating processing methods for crystal growth apparatus according to embodiments of the present disclosure. [0017]
FIG. 4 B are simplified diagrams illustrating crystal growth processes according to embodiments of the present disclosure. [0018]
FIG. 5 is a simplified diagram of flow chart illustrating a crystal growth process according to an embodiment of the present disclosure. [0019]
FIG. 6C are simplified diagrams illustrating methods for growth of thick boules and subsequent wafering according to embodiments of the present disclosure. …
FIG. 7 is a simplified diagram illustrating the crystallographic misorientation between two adjacent wafer- bonded crystals according to an embodiment of the …
FIG. 8 is a simplified diagram showing bi-faceted growth of a semipolar orientation intermediate between two stable growth orientation, according to embodiments …
FIG. 9 is a simplified illustrating a method for growth of thick boules and subsequent wafering according to embodiments of the present disclosure. [0023]
FIG. 10 is a simplified diagram of an apparatus for a crystal growth process according to embodiments of the present disclosure. [0024]
FIG. 11 is a flow chart illustrating a crystal growth process according to embodiments of the present disclosure. [0025]
FIG. 12C are simplified diagrams showing a range of crystallographic orientations suitable for seed crystals for semipolar crystal growth as used in certain …
FIG. 13 is a photograph of a grown boule according to an embodiment of the present disclosure. [0027]
FIG. 14 is a chart depicting a process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules, according to an embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a boule used to form one or more single crystal substrates, comprising performing a crystal growth process on one or more seed crystals to form one or more boules, wherein the one or more seed crystals each have a first crystallographic orientation on a first surface, the first surface of each of the one or more seed crystals includes parallel features that are: formed on the first surface of or within each of the one or more seed crystals; or formed between two or more tiled crystals that form a mosaic of tiled crystals, [[and]] a first growth facet[[s]] and a second g rowth facet form between the parallel features as crystal g rowth occurs on the one or more seed crystals durin q the crystal q rowth process, wherein the first g rowth facet has a second crystallographic orientation and the second q rowth facet has a third crystallographic orientation, and exposed surfaces of the g rowin g crystal do not include the first crystallographic orientation, and wherein each of the second crystallographic orientation and the third crystallographic orientation are oblique with respect to the first crystallographic orientation, and the first crystallographic orientation, the second crystallographic orientation, and the third crystallographic orientation are each different families of cr y stallo g raphic orientations. Previously presented
[[1.]] 2 The method of claim 1, wherein the parallel features comprise grooves on the first surface of each of the one or more seed crystals and are formed by sawing, dry etching, reactive ion etching, wet etching, laser scribing, or grinding. Currently amended
The method of claim 1, wherein the parallel features comprise mask lines formed on the first surface of each of the one or more seed crystals, the mask lines comprising at least one of nickel, chromium, titanium, gold, molybdenum, tungsten, tantalum, niobium, rhenium, platinum, rhodium, ruthenium, silver, Si O 2, or SiN x. Original
The method of claim 1, wherein the parallel features comprise gaps between the tiled crystals that form the mosaic of tiled crystals, a polar misorientation angle between adjacent tiled crystals being less than 0.5 degree and an azimuthal misorientation angle between adjacent tiled crystals being less than 1 degree. Original
The method of claim 1, wherein the parallel features have a period that is between about 0.01 millimeter and about 10 centimeters. Original
The method of claim 1, wherein the one or more seed crystals and the boule comprise gallium nitride having a wurtzite structure and the first crystallographic orientation is angled by at least about 5 degrees from an m -plane and from a c-plane of said wurtzite structure. Original
The method of claim 1, wherein the crystal growth process is performed using an ammonothermal crystal growth method at a temperature above about 400 degrees Celsius. Original
The method of claim 1, wherein the crystal growth process is performed using a hydride vapor phase epitaxy (HVPE) crystal growth method at a temperature above about 900 degrees. Original
The method of claim 1, wherein the crystal growth process is performed using a flux method. Original
The method of claim 1, further comprising slicing the boule formed during the crystal growth process to form two or more single crystal substrates, wherein the two or more single crystal substrates have a crystallographic orientation within 3 degrees of the first crystallographic orientation. Original
The method of claim 1, wherein the first and second growth facets, once formed, persist throughout the duration of the crystal growth process and no growth facets having said first crystallographic orientation appear after said first surface is overgrown. New
Layer stacks claimed or described, ordered top of device to substrate.
semipolar GaN boule
single crystal semipolar GaN substrate
Materials described outside the worked examples.
gallium nitride
GaN
mask line material
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.9–2.2 mm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
METHOD FOR PREPARING GALLIUM NITRIDE (GAN) SINGLE-CRYSTAL SUBSTRATE WITH EDGE METAL MASK TECHNOLOGY
METHOD FOR RINSING COMPOUND SEMICONDUCTOR, SOLUTION FOR RINSING COMPOUND SEMICONDUCTOR CONTAINING GALLIUM AS CONSTITUENT ELEMENT, METHOD FOR FABRICATING COMPOUND SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING GALLIUM NITRIDE SUBSTRATE, AND GALLIUM NITRIDE SUBSTRATE
Patent
Atlas literature
Patent
US 10,604,865Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B show crystal growth frame structures according to embodiments of the present disclosure. [0015]
FIG. 2C show crystal growth seed rack structures according to embodiments of the present disclosure. [0016]
FIG. 3 B are simplified diagrams illustrating processing methods for crystal growth apparatus according to embodiments of the present disclosure. [0017]
FIG. 4 B are simplified diagrams illustrating crystal growth processes according to embodiments of the present disclosure. [0018]
FIG. 5 is a simplified diagram of flow chart illustrating a crystal growth process according to an embodiment of the present disclosure. [0019]
FIG. 6C are simplified diagrams illustrating methods for growth of thick boules and subsequent wafering according to embodiments of the present disclosure. …
FIG. 7 is a simplified diagram illustrating the crystallographic misorientation between two adjacent wafer- bonded crystals according to an embodiment of the …
FIG. 8 is a simplified diagram showing bi-faceted growth of a semipolar orientation intermediate between two stable growth orientation, according to embodiments …
FIG. 9 is a simplified illustrating a method for growth of thick boules and subsequent wafering according to embodiments of the present disclosure. [0023]
FIG. 10 is a simplified diagram of an apparatus for a crystal growth process according to embodiments of the present disclosure. [0024]
FIG. 11 is a flow chart illustrating a crystal growth process according to embodiments of the present disclosure. [0025]
FIG. 12C are simplified diagrams showing a range of crystallographic orientations suitable for seed crystals for semipolar crystal growth as used in certain …
FIG. 13 is a photograph of a grown boule according to an embodiment of the present disclosure. [0027]
FIG. 14 is a chart depicting a process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules, according to an embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a boule used to form one or more single crystal substrates, comprising performing a crystal growth process on one or more seed crystals to form one or more boules, wherein the one or more seed crystals each have a first crystallographic orientation on a first surface, the first surface of each of the one or more seed crystals includes parallel features that are: formed on the first surface of or within each of the one or more seed crystals; or formed between two or more tiled crystals that form a mosaic of tiled crystals, [[and]] a first growth facet[[s]] and a second g rowth facet form between the parallel features as crystal g rowth occurs on the one or more seed crystals durin q the crystal q rowth process, wherein the first g rowth facet has a second crystallographic orientation and the second q rowth facet has a third crystallographic orientation, and exposed surfaces of the g rowin g crystal do not include the first crystallographic orientation, and wherein each of the second crystallographic orientation and the third crystallographic orientation are oblique with respect to the first crystallographic orientation, and the first crystallographic orientation, the second crystallographic orientation, and the third crystallographic orientation are each different families of cr y stallo g raphic orientations. Previously presented
[[1.]] 2 The method of claim 1, wherein the parallel features comprise grooves on the first surface of each of the one or more seed crystals and are formed by sawing, dry etching, reactive ion etching, wet etching, laser scribing, or grinding. Currently amended
The method of claim 1, wherein the parallel features comprise mask lines formed on the first surface of each of the one or more seed crystals, the mask lines comprising at least one of nickel, chromium, titanium, gold, molybdenum, tungsten, tantalum, niobium, rhenium, platinum, rhodium, ruthenium, silver, Si O 2, or SiN x. Original
The method of claim 1, wherein the parallel features comprise gaps between the tiled crystals that form the mosaic of tiled crystals, a polar misorientation angle between adjacent tiled crystals being less than 0.5 degree and an azimuthal misorientation angle between adjacent tiled crystals being less than 1 degree. Original
The method of claim 1, wherein the parallel features have a period that is between about 0.01 millimeter and about 10 centimeters. Original
The method of claim 1, wherein the one or more seed crystals and the boule comprise gallium nitride having a wurtzite structure and the first crystallographic orientation is angled by at least about 5 degrees from an m -plane and from a c-plane of said wurtzite structure. Original
The method of claim 1, wherein the crystal growth process is performed using an ammonothermal crystal growth method at a temperature above about 400 degrees Celsius. Original
The method of claim 1, wherein the crystal growth process is performed using a hydride vapor phase epitaxy (HVPE) crystal growth method at a temperature above about 900 degrees. Original
The method of claim 1, wherein the crystal growth process is performed using a flux method. Original
The method of claim 1, further comprising slicing the boule formed during the crystal growth process to form two or more single crystal substrates, wherein the two or more single crystal substrates have a crystallographic orientation within 3 degrees of the first crystallographic orientation. Original
The method of claim 1, wherein the first and second growth facets, once formed, persist throughout the duration of the crystal growth process and no growth facets having said first crystallographic orientation appear after said first surface is overgrown. New
Layer stacks claimed or described, ordered top of device to substrate.
semipolar GaN boule
single crystal semipolar GaN substrate
Materials described outside the worked examples.
gallium nitride
GaN
mask line material
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.9–2.2 mm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
METHOD FOR PREPARING GALLIUM NITRIDE (GAN) SINGLE-CRYSTAL SUBSTRATE WITH EDGE METAL MASK TECHNOLOGY
METHOD FOR RINSING COMPOUND SEMICONDUCTOR, SOLUTION FOR RINSING COMPOUND SEMICONDUCTOR CONTAINING GALLIUM AS CONSTITUENT ELEMENT, METHOD FOR FABRICATING COMPOUND SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING GALLIUM NITRIDE SUBSTRATE, AND GALLIUM NITRIDE SUBSTRATE
Patent
Atlas literature
Patent
US 10,604,865Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B show crystal growth frame structures according to embodiments of the present disclosure. [0015]
FIG. 2C show crystal growth seed rack structures according to embodiments of the present disclosure. [0016]
FIG. 3 B are simplified diagrams illustrating processing methods for crystal growth apparatus according to embodiments of the present disclosure. [0017]
FIG. 4 B are simplified diagrams illustrating crystal growth processes according to embodiments of the present disclosure. [0018]
FIG. 5 is a simplified diagram of flow chart illustrating a crystal growth process according to an embodiment of the present disclosure. [0019]
FIG. 6C are simplified diagrams illustrating methods for growth of thick boules and subsequent wafering according to embodiments of the present disclosure. …
FIG. 7 is a simplified diagram illustrating the crystallographic misorientation between two adjacent wafer- bonded crystals according to an embodiment of the …
FIG. 8 is a simplified diagram showing bi-faceted growth of a semipolar orientation intermediate between two stable growth orientation, according to embodiments …
FIG. 9 is a simplified illustrating a method for growth of thick boules and subsequent wafering according to embodiments of the present disclosure. [0023]
FIG. 10 is a simplified diagram of an apparatus for a crystal growth process according to embodiments of the present disclosure. [0024]
FIG. 11 is a flow chart illustrating a crystal growth process according to embodiments of the present disclosure. [0025]
FIG. 12C are simplified diagrams showing a range of crystallographic orientations suitable for seed crystals for semipolar crystal growth as used in certain …
FIG. 13 is a photograph of a grown boule according to an embodiment of the present disclosure. [0027]
FIG. 14 is a chart depicting a process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules, according to an embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a boule used to form one or more single crystal substrates, comprising performing a crystal growth process on one or more seed crystals to form one or more boules, wherein the one or more seed crystals each have a first crystallographic orientation on a first surface, the first surface of each of the one or more seed crystals includes parallel features that are: formed on the first surface of or within each of the one or more seed crystals; or formed between two or more tiled crystals that form a mosaic of tiled crystals, [[and]] a first growth facet[[s]] and a second g rowth facet form between the parallel features as crystal g rowth occurs on the one or more seed crystals durin q the crystal q rowth process, wherein the first g rowth facet has a second crystallographic orientation and the second q rowth facet has a third crystallographic orientation, and exposed surfaces of the g rowin g crystal do not include the first crystallographic orientation, and wherein each of the second crystallographic orientation and the third crystallographic orientation are oblique with respect to the first crystallographic orientation, and the first crystallographic orientation, the second crystallographic orientation, and the third crystallographic orientation are each different families of cr y stallo g raphic orientations. Previously presented
[[1.]] 2 The method of claim 1, wherein the parallel features comprise grooves on the first surface of each of the one or more seed crystals and are formed by sawing, dry etching, reactive ion etching, wet etching, laser scribing, or grinding. Currently amended
The method of claim 1, wherein the parallel features comprise mask lines formed on the first surface of each of the one or more seed crystals, the mask lines comprising at least one of nickel, chromium, titanium, gold, molybdenum, tungsten, tantalum, niobium, rhenium, platinum, rhodium, ruthenium, silver, Si O 2, or SiN x. Original
The method of claim 1, wherein the parallel features comprise gaps between the tiled crystals that form the mosaic of tiled crystals, a polar misorientation angle between adjacent tiled crystals being less than 0.5 degree and an azimuthal misorientation angle between adjacent tiled crystals being less than 1 degree. Original
The method of claim 1, wherein the parallel features have a period that is between about 0.01 millimeter and about 10 centimeters. Original
The method of claim 1, wherein the one or more seed crystals and the boule comprise gallium nitride having a wurtzite structure and the first crystallographic orientation is angled by at least about 5 degrees from an m -plane and from a c-plane of said wurtzite structure. Original
The method of claim 1, wherein the crystal growth process is performed using an ammonothermal crystal growth method at a temperature above about 400 degrees Celsius. Original
The method of claim 1, wherein the crystal growth process is performed using a hydride vapor phase epitaxy (HVPE) crystal growth method at a temperature above about 900 degrees. Original
The method of claim 1, wherein the crystal growth process is performed using a flux method. Original
The method of claim 1, further comprising slicing the boule formed during the crystal growth process to form two or more single crystal substrates, wherein the two or more single crystal substrates have a crystallographic orientation within 3 degrees of the first crystallographic orientation. Original
The method of claim 1, wherein the first and second growth facets, once formed, persist throughout the duration of the crystal growth process and no growth facets having said first crystallographic orientation appear after said first surface is overgrown. New
Layer stacks claimed or described, ordered top of device to substrate.
semipolar GaN boule
single crystal semipolar GaN substrate
Materials described outside the worked examples.
gallium nitride
GaN
mask line material
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.9–2.2 mm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
METHOD FOR PREPARING GALLIUM NITRIDE (GAN) SINGLE-CRYSTAL SUBSTRATE WITH EDGE METAL MASK TECHNOLOGY
METHOD FOR RINSING COMPOUND SEMICONDUCTOR, SOLUTION FOR RINSING COMPOUND SEMICONDUCTOR CONTAINING GALLIUM AS CONSTITUENT ELEMENT, METHOD FOR FABRICATING COMPOUND SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING GALLIUM NITRIDE SUBSTRATE, AND GALLIUM NITRIDE SUBSTRATE
ammonia
NH₃
| — |
Thickness | 0.6–2.2 mm | — |
Thickness | 1.4–2.6 mm | — |
Thickness | 1.1–2.4 mm | — |
Thickness | 0.5–50 mm | — |
Thickness | 2–25 mm | — |
Thickness | 1000–1000000 nm | — |
Thickness | 10–300 µm | — |
Thickness | 10000–1000000 nm | — |
Thickness | 0.01–100 µm | — |
Thickness | 10000–10000000 nm | — |
Thickness | 10000–100000000 nm | — |
Thickness | 0.1–50 mm | — |
Thickness | 1–10 mm | — |
Thickness | 385–750 nm | — |
Thickness | 2–10 mm | — |
Thickness | 5–300 mm | — |
Thickness | 25–150 mm | — |
Thickness | 25–300 mm | — |
Thickness | ≤ 5 mm | — |
Thickness | ≤ 2 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 0.3 mm | — |
Thickness | ≤ 0.1 mm | — |
Thickness | ≤ 0.03 mm | — |
Thickness | ≤ 0.01 mm | — |
Pressure | ≥ 200 pa | — |
Thickness | ≥ 5 mm | — |
ammonia
NH₃
| — |
Thickness | 0.6–2.2 mm | — |
Thickness | 1.4–2.6 mm | — |
Thickness | 1.1–2.4 mm | — |
Thickness | 0.5–50 mm | — |
Thickness | 2–25 mm | — |
Thickness | 1000–1000000 nm | — |
Thickness | 10–300 µm | — |
Thickness | 10000–1000000 nm | — |
Thickness | 0.01–100 µm | — |
Thickness | 10000–10000000 nm | — |
Thickness | 10000–100000000 nm | — |
Thickness | 0.1–50 mm | — |
Thickness | 1–10 mm | — |
Thickness | 385–750 nm | — |
Thickness | 2–10 mm | — |
Thickness | 5–300 mm | — |
Thickness | 25–150 mm | — |
Thickness | 25–300 mm | — |
Thickness | ≤ 5 mm | — |
Thickness | ≤ 2 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 0.3 mm | — |
Thickness | ≤ 0.1 mm | — |
Thickness | ≤ 0.03 mm | — |
Thickness | ≤ 0.01 mm | — |
Pressure | ≥ 200 pa | — |
Thickness | ≥ 5 mm | — |
ammonia
NH₃
| — |
Thickness | 0.6–2.2 mm | — |
Thickness | 1.4–2.6 mm | — |
Thickness | 1.1–2.4 mm | — |
Thickness | 0.5–50 mm | — |
Thickness | 2–25 mm | — |
Thickness | 1000–1000000 nm | — |
Thickness | 10–300 µm | — |
Thickness | 10000–1000000 nm | — |
Thickness | 0.01–100 µm | — |
Thickness | 10000–10000000 nm | — |
Thickness | 10000–100000000 nm | — |
Thickness | 0.1–50 mm | — |
Thickness | 1–10 mm | — |
Thickness | 385–750 nm | — |
Thickness | 2–10 mm | — |
Thickness | 5–300 mm | — |
Thickness | 25–150 mm | — |
Thickness | 25–300 mm | — |
Thickness | ≤ 5 mm | — |
Thickness | ≤ 2 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 0.3 mm | — |
Thickness | ≤ 0.1 mm | — |
Thickness | ≤ 0.03 mm | — |
Thickness | ≤ 0.01 mm | — |
Pressure | ≥ 200 pa | — |
Thickness | ≥ 5 mm | — |
ammonia
NH₃
| — |
Thickness | 0.6–2.2 mm | — |
Thickness | 1.4–2.6 mm | — |
Thickness | 1.1–2.4 mm | — |
Thickness | 0.5–50 mm | — |
Thickness | 2–25 mm | — |
Thickness | 1000–1000000 nm | — |
Thickness | 10–300 µm | — |
Thickness | 10000–1000000 nm | — |
Thickness | 0.01–100 µm | — |
Thickness | 10000–10000000 nm | — |
Thickness | 10000–100000000 nm | — |
Thickness | 0.1–50 mm | — |
Thickness | 1–10 mm | — |
Thickness | 385–750 nm | — |
Thickness | 2–10 mm | — |
Thickness | 5–300 mm | — |
Thickness | 25–150 mm | — |
Thickness | 25–300 mm | — |
Thickness | ≤ 5 mm | — |
Thickness | ≤ 2 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 0.3 mm | — |
Thickness | ≤ 0.1 mm | — |
Thickness | ≤ 0.03 mm | — |
Thickness | ≤ 0.01 mm | — |
Pressure | ≥ 200 pa | — |
Thickness | ≥ 5 mm | — |
