Patent
US 8,767,787INTEGRATED LASER DIODES WITH QUALITY FACETS ON GaN SUBSTRATES
James W. Raring, Daniel F. Feezell
SORAA, INC.·US
Copyright © 2026 Matter42. All rights reserved.
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separation between TIR end and m-face facet (minimum, claim 11) | — | — |
separation between TIR end and m-face facet (minimum, claim 12) | — | — |
Thickness | 1–40 nm | — |
Thickness | 0.2–5 nm | — |
Thickness | 5–1000 nm | — |
Thickness | 50–3000 µm | — |
Thickness | 0.5–50 µm | — |
Thickness | 10–100 nm | — |
Thickness | 1–50 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 400 µm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 50 µm | — |
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS
| — |
| — |
separation between TIR end and m-face facet (minimum, claim 11) | — | — |
separation between TIR end and m-face facet (minimum, claim 12) | — | — |
Thickness | 1–40 nm | — |
Thickness | 0.2–5 nm | — |
Thickness | 5–1000 nm | — |
Thickness | 50–3000 µm | — |
Thickness | 0.5–50 µm | — |
Thickness | 10–100 nm | — |
Thickness | 1–50 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 400 µm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 50 µm | — |
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS
| — |
| — |
separation between TIR end and m-face facet (minimum, claim 11) | — | — |
separation between TIR end and m-face facet (minimum, claim 12) | — | — |
Thickness | 1–40 nm | — |
Thickness | 0.2–5 nm | — |
Thickness | 5–1000 nm | — |
Thickness | 50–3000 µm | — |
Thickness | 0.5–50 µm | — |
Thickness | 10–100 nm | — |
Thickness | 1–50 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 400 µm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 50 µm | — |
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS
| — |
| — |
separation between TIR end and m-face facet (minimum, claim 11) | — | — |
separation between TIR end and m-face facet (minimum, claim 12) | — | — |
Thickness | 1–40 nm | — |
Thickness | 0.2–5 nm | — |
Thickness | 5–1000 nm | — |
Thickness | 50–3000 µm | — |
Thickness | 0.5–50 µm | — |
Thickness | 10–100 nm | — |
Thickness | 1–50 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 400 µm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 50 µm | — |
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS