Patent
US 10,612,161GaN SUBSTRATE
Tetsuharu KAJIMOTO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,612,161Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a perspective view illustrating a configuration example of an aggregate seed.
Figure 2 is a perspective view illustrating a state where a bulk GaN crystal is grown on an aggregate seed.
Figure 3 is a perspective view illustrating a disk-shaped GaN substrate with an orientation flat formed thereon.
Figure 4A and
Figure 4B are each a perspective view of a disk-shaped GaN substrate, for describing a "first point".
Figure 5 is a perspective view of a disk-shaped GaN substrate having one of the first points on an orientation flat.
Figures 6A and 6B include cross-sectional views each illustrating a step of slicing GaN substrates from a bulk GaN crystal.
Figure 6B illustrates a state where the bulk GaN crystal is sliced.
Figures 7A and 7B include cross-sectional views each illustrating a step of slicing GaN substrates from a bulk GaN crystal.
Figure 7B illustrates a state where the bulk GaN crystal is sliced.
Figure 8 is a perspective view illustrating a configuration example of an aggregate seed.
Figure 9 includes plan views describing a method of forming an orientation flat in two steps.
Figure 10 is a perspective view illustrating an example of a tile seed.
Figure 11 illustrates an X-ray diffraction pattern.
Figure 12 illustrates a diagram describing an X-ray diffraction measurement method.
Figure 13 illustrates an X-ray diffraction pattern.
Figure 14 is a plan view of a bulk GaN crystal where a margin is provided to the size in a direction perpendicular to the c-axis.
Figure 15 is a perspective view of a GaN (20-21) substrate having a structure where four single crystal regions are arranged in a row along the direction of the orthogonal projection of the c-axis on the front surface.
Figure 16 is a perspective view of a GaN (20-21) substrate having a structure where eight single crystal regions are arranged in two rows in the direction of the orthogonal projection of the c-axis on the front surface.
Figure 17 is a plan view illustrating an example of an aggregate seed.
Figure 18 is a plan view illustrating an example of an aggregate seed.
Figure 19A and
Figure 19B each illustrate an X-ray diffraction pattern.
Figure 20 illustrates an X-ray diffraction pattern.
Figure 21A and
Figure 21B each illustrate an X-ray diffraction pattern. Description of Embodiments [0013] In a GaN crystal, a crystal axis parallel to [0001] and [000-1] is called a "c-axis", a crystal axis parallel to <10-10> is called an " m -axis", and a crystal axis parallel to <11-20> is called an "a-axis". …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The GaN substrate according to claim 1, wherein the first point is positioned on an orientation flat with a length of less than 20 mm provided on the outer circumference of the substrate. SVG 15625019.02-10-2020.K₆GPG₈R₅RXEAPX2.CLM.2.svg 0.16 3.97 Black and white a front surface tilted with a tilt angle of 45 0 or more and 135 0 or less relative to the (0001) plane in a tilt direction within a range of ±50 around a < 1 0-10> direction; and a back surface which is a main surface opposite to the front su r face, wherein the GaN substrate has a diameter of 70 mm or more, and the GaN substrate has on a side surface thereof a first point positioned in a direction perpendicular to the c-axis when viewed from the center of the substrate, and a single diffraction peak appears in an X-ray diffraction pattern obtained by 0 scan in which an X-ray (CuK ai: wavelength: 0.1542 nm) is incident to the first point and the incident angle 0 of the incident X-ray is varied while the 2 0 angle of the diffracted X-ray is fixed to twice the Bra gg angle of 28.99 0 of the {11 -20 } plane. Original
The G aN substrate according to claim 3, wherein the GaN substrate has a plurality of single crystal regions arranged in a row or two rows along the direction of the orthogonal projection of the c-axis on the front surface, the GaN substrate has a diameter of 95 mm or more and 105 mm or less, and each of the plurality of single crystal regions is exposed on both the front surface and the back surface. Original
The GaN substrate according to claim 3, wherein the G aN substrate has a diameter of 105 mm or less, and the first point is positioned on an orientation flat with a length of less than 40 mm provided on the outer circumference of the substrate. Original
The GaN substrate according to claim 3, wherein the GaN substrate has a plurality of single crystal regions arranged in two rows or three rows along the direction of the orthogonal projection of the c-axis on the front surface, the GaN substrate has a diameter of 145 mm or more and 155 mm or less, and each of the plurality of single crystal regions is exposed on both the front surface and the back surface. Previously presented
The GaN substrate according to claim 3, wherein the GaN substrate has a diameter of 145 mm or more and 155 mm or less, and the first point is positioned on an orientation flat with a length of less than 60 mm provided on the outer circumference of the substrate. Original
The GaN substrate according to claim 1, wherein a half-value width of the diffraction peak is less than 0.5 0. Original
The GaN substrate according to claim 1, wherein a low index plane most nearly parallel to the front surface is any crystal plane selected from { 10- 101, { 30-31 }, { 30-3-1 }, {20-21}, {20-2-1}, {30-32}, {30-3-2}, {10-11} and {10-1-1}. Original
(Cu rr ently Amended) The GaN substrate according to claim 1, wherein the GaN substrate is a GaN crystal having concentrations of alkali metals and halogen of less than 1 x 10 15 cm- 3 and an absorption coefficient at 450 nm of 2 cm⁻¹ or less. Currently amended
The GaN substrate according to claim 1, wherein the GaN substrate is a GaN crystal which gives an infrared absorption spectrum where a peak assigned to a gallium vacancy- hydrogen complex is not observed between 3,100 and 3,500 cm⁻¹. Original
The GaN substrate according to claim 3, wherein a half-value width of the diffraction peak is less than 0.5 0. Original
The GaN substrate according to claim 3, wherein a low index plane most nearly parallel to the front surface is any crystal plane selected from { 10- 10}, { 30-31 }, { 30-3-1 }, {20-21}, {20-2-1}, {30-32}, {30-3-2}, {10-11} and {10-1-1}. Original
The GaN substrate according to claim 3, wherein the GaN substrate is a GaN crystal having concentrations of alkali metals and halogen of less than 1 x 10 15 cm- 3 and an absorption coefficient at 450 nm of 2 cm⁻¹ or less. Currently amended
The GaN substrate according to claim 3, wherein the GaN substrate is a GaN crystal which gives an infrared absorption spectrum where a peak assigned to a gallium vacancy- hydrogen complex is not observed between 3,100 and 3,500 cm⁻¹. Original
Layer stacks claimed or described, ordered top of device to substrate.
disk-shaped GaN substrate (non-polar/semi-polar)
Materials described outside the worked examples.
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
θ scan with CuKα1 X-ray (wavelength 0.1542 nm) incident on first point on substrate side surface; 2θ fixed to twice Bragg angle of 28.99° of {11-20} plane; single diffraction peak observed
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
half-value width of XRD diffraction peak ({11-20} theta scan) | — | GaN |
absorption coefficient at 450 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,612,161Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a perspective view illustrating a configuration example of an aggregate seed.
Figure 2 is a perspective view illustrating a state where a bulk GaN crystal is grown on an aggregate seed.
Figure 3 is a perspective view illustrating a disk-shaped GaN substrate with an orientation flat formed thereon.
Figure 4A and
Figure 4B are each a perspective view of a disk-shaped GaN substrate, for describing a "first point".
Figure 5 is a perspective view of a disk-shaped GaN substrate having one of the first points on an orientation flat.
Figures 6A and 6B include cross-sectional views each illustrating a step of slicing GaN substrates from a bulk GaN crystal.
Figure 6B illustrates a state where the bulk GaN crystal is sliced.
Figures 7A and 7B include cross-sectional views each illustrating a step of slicing GaN substrates from a bulk GaN crystal.
Figure 7B illustrates a state where the bulk GaN crystal is sliced.
Figure 8 is a perspective view illustrating a configuration example of an aggregate seed.
Figure 9 includes plan views describing a method of forming an orientation flat in two steps.
Figure 10 is a perspective view illustrating an example of a tile seed.
Figure 11 illustrates an X-ray diffraction pattern.
Figure 12 illustrates a diagram describing an X-ray diffraction measurement method.
Figure 13 illustrates an X-ray diffraction pattern.
Figure 14 is a plan view of a bulk GaN crystal where a margin is provided to the size in a direction perpendicular to the c-axis.
Figure 15 is a perspective view of a GaN (20-21) substrate having a structure where four single crystal regions are arranged in a row along the direction of the orthogonal projection of the c-axis on the front surface.
Figure 16 is a perspective view of a GaN (20-21) substrate having a structure where eight single crystal regions are arranged in two rows in the direction of the orthogonal projection of the c-axis on the front surface.
Figure 17 is a plan view illustrating an example of an aggregate seed.
Figure 18 is a plan view illustrating an example of an aggregate seed.
Figure 19A and
Figure 19B each illustrate an X-ray diffraction pattern.
Figure 20 illustrates an X-ray diffraction pattern.
Figure 21A and
Figure 21B each illustrate an X-ray diffraction pattern. Description of Embodiments [0013] In a GaN crystal, a crystal axis parallel to [0001] and [000-1] is called a "c-axis", a crystal axis parallel to <10-10> is called an " m -axis", and a crystal axis parallel to <11-20> is called an "a-axis". …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The GaN substrate according to claim 1, wherein the first point is positioned on an orientation flat with a length of less than 20 mm provided on the outer circumference of the substrate. SVG 15625019.02-10-2020.K₆GPG₈R₅RXEAPX2.CLM.2.svg 0.16 3.97 Black and white a front surface tilted with a tilt angle of 45 0 or more and 135 0 or less relative to the (0001) plane in a tilt direction within a range of ±50 around a < 1 0-10> direction; and a back surface which is a main surface opposite to the front su r face, wherein the GaN substrate has a diameter of 70 mm or more, and the GaN substrate has on a side surface thereof a first point positioned in a direction perpendicular to the c-axis when viewed from the center of the substrate, and a single diffraction peak appears in an X-ray diffraction pattern obtained by 0 scan in which an X-ray (CuK ai: wavelength: 0.1542 nm) is incident to the first point and the incident angle 0 of the incident X-ray is varied while the 2 0 angle of the diffracted X-ray is fixed to twice the Bra gg angle of 28.99 0 of the {11 -20 } plane. Original
The G aN substrate according to claim 3, wherein the GaN substrate has a plurality of single crystal regions arranged in a row or two rows along the direction of the orthogonal projection of the c-axis on the front surface, the GaN substrate has a diameter of 95 mm or more and 105 mm or less, and each of the plurality of single crystal regions is exposed on both the front surface and the back surface. Original
The GaN substrate according to claim 3, wherein the G aN substrate has a diameter of 105 mm or less, and the first point is positioned on an orientation flat with a length of less than 40 mm provided on the outer circumference of the substrate. Original
The GaN substrate according to claim 3, wherein the GaN substrate has a plurality of single crystal regions arranged in two rows or three rows along the direction of the orthogonal projection of the c-axis on the front surface, the GaN substrate has a diameter of 145 mm or more and 155 mm or less, and each of the plurality of single crystal regions is exposed on both the front surface and the back surface. Previously presented
The GaN substrate according to claim 3, wherein the GaN substrate has a diameter of 145 mm or more and 155 mm or less, and the first point is positioned on an orientation flat with a length of less than 60 mm provided on the outer circumference of the substrate. Original
The GaN substrate according to claim 1, wherein a half-value width of the diffraction peak is less than 0.5 0. Original
The GaN substrate according to claim 1, wherein a low index plane most nearly parallel to the front surface is any crystal plane selected from { 10- 101, { 30-31 }, { 30-3-1 }, {20-21}, {20-2-1}, {30-32}, {30-3-2}, {10-11} and {10-1-1}. Original
(Cu rr ently Amended) The GaN substrate according to claim 1, wherein the GaN substrate is a GaN crystal having concentrations of alkali metals and halogen of less than 1 x 10 15 cm- 3 and an absorption coefficient at 450 nm of 2 cm⁻¹ or less. Currently amended
The GaN substrate according to claim 1, wherein the GaN substrate is a GaN crystal which gives an infrared absorption spectrum where a peak assigned to a gallium vacancy- hydrogen complex is not observed between 3,100 and 3,500 cm⁻¹. Original
The GaN substrate according to claim 3, wherein a half-value width of the diffraction peak is less than 0.5 0. Original
The GaN substrate according to claim 3, wherein a low index plane most nearly parallel to the front surface is any crystal plane selected from { 10- 10}, { 30-31 }, { 30-3-1 }, {20-21}, {20-2-1}, {30-32}, {30-3-2}, {10-11} and {10-1-1}. Original
The GaN substrate according to claim 3, wherein the GaN substrate is a GaN crystal having concentrations of alkali metals and halogen of less than 1 x 10 15 cm- 3 and an absorption coefficient at 450 nm of 2 cm⁻¹ or less. Currently amended
The GaN substrate according to claim 3, wherein the GaN substrate is a GaN crystal which gives an infrared absorption spectrum where a peak assigned to a gallium vacancy- hydrogen complex is not observed between 3,100 and 3,500 cm⁻¹. Original
Layer stacks claimed or described, ordered top of device to substrate.
disk-shaped GaN substrate (non-polar/semi-polar)
Materials described outside the worked examples.
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
θ scan with CuKα1 X-ray (wavelength 0.1542 nm) incident on first point on substrate side surface; 2θ fixed to twice Bragg angle of 28.99° of {11-20} plane; single diffraction peak observed
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
half-value width of XRD diffraction peak ({11-20} theta scan) | — | GaN |
absorption coefficient at 450 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,612,161Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a perspective view illustrating a configuration example of an aggregate seed.
Figure 2 is a perspective view illustrating a state where a bulk GaN crystal is grown on an aggregate seed.
Figure 3 is a perspective view illustrating a disk-shaped GaN substrate with an orientation flat formed thereon.
Figure 4A and
Figure 4B are each a perspective view of a disk-shaped GaN substrate, for describing a "first point".
Figure 5 is a perspective view of a disk-shaped GaN substrate having one of the first points on an orientation flat.
Figures 6A and 6B include cross-sectional views each illustrating a step of slicing GaN substrates from a bulk GaN crystal.
Figure 6B illustrates a state where the bulk GaN crystal is sliced.
Figures 7A and 7B include cross-sectional views each illustrating a step of slicing GaN substrates from a bulk GaN crystal.
Figure 7B illustrates a state where the bulk GaN crystal is sliced.
Figure 8 is a perspective view illustrating a configuration example of an aggregate seed.
Figure 9 includes plan views describing a method of forming an orientation flat in two steps.
Figure 10 is a perspective view illustrating an example of a tile seed.
Figure 11 illustrates an X-ray diffraction pattern.
Figure 12 illustrates a diagram describing an X-ray diffraction measurement method.
Figure 13 illustrates an X-ray diffraction pattern.
Figure 14 is a plan view of a bulk GaN crystal where a margin is provided to the size in a direction perpendicular to the c-axis.
Figure 15 is a perspective view of a GaN (20-21) substrate having a structure where four single crystal regions are arranged in a row along the direction of the orthogonal projection of the c-axis on the front surface.
Figure 16 is a perspective view of a GaN (20-21) substrate having a structure where eight single crystal regions are arranged in two rows in the direction of the orthogonal projection of the c-axis on the front surface.
Figure 17 is a plan view illustrating an example of an aggregate seed.
Figure 18 is a plan view illustrating an example of an aggregate seed.
Figure 19A and
Figure 19B each illustrate an X-ray diffraction pattern.
Figure 20 illustrates an X-ray diffraction pattern.
Figure 21A and
Figure 21B each illustrate an X-ray diffraction pattern. Description of Embodiments [0013] In a GaN crystal, a crystal axis parallel to [0001] and [000-1] is called a "c-axis", a crystal axis parallel to <10-10> is called an " m -axis", and a crystal axis parallel to <11-20> is called an "a-axis". …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The GaN substrate according to claim 1, wherein the first point is positioned on an orientation flat with a length of less than 20 mm provided on the outer circumference of the substrate. SVG 15625019.02-10-2020.K₆GPG₈R₅RXEAPX2.CLM.2.svg 0.16 3.97 Black and white a front surface tilted with a tilt angle of 45 0 or more and 135 0 or less relative to the (0001) plane in a tilt direction within a range of ±50 around a < 1 0-10> direction; and a back surface which is a main surface opposite to the front su r face, wherein the GaN substrate has a diameter of 70 mm or more, and the GaN substrate has on a side surface thereof a first point positioned in a direction perpendicular to the c-axis when viewed from the center of the substrate, and a single diffraction peak appears in an X-ray diffraction pattern obtained by 0 scan in which an X-ray (CuK ai: wavelength: 0.1542 nm) is incident to the first point and the incident angle 0 of the incident X-ray is varied while the 2 0 angle of the diffracted X-ray is fixed to twice the Bra gg angle of 28.99 0 of the {11 -20 } plane. Original
The G aN substrate according to claim 3, wherein the GaN substrate has a plurality of single crystal regions arranged in a row or two rows along the direction of the orthogonal projection of the c-axis on the front surface, the GaN substrate has a diameter of 95 mm or more and 105 mm or less, and each of the plurality of single crystal regions is exposed on both the front surface and the back surface. Original
The GaN substrate according to claim 3, wherein the G aN substrate has a diameter of 105 mm or less, and the first point is positioned on an orientation flat with a length of less than 40 mm provided on the outer circumference of the substrate. Original
The GaN substrate according to claim 3, wherein the GaN substrate has a plurality of single crystal regions arranged in two rows or three rows along the direction of the orthogonal projection of the c-axis on the front surface, the GaN substrate has a diameter of 145 mm or more and 155 mm or less, and each of the plurality of single crystal regions is exposed on both the front surface and the back surface. Previously presented
The GaN substrate according to claim 3, wherein the GaN substrate has a diameter of 145 mm or more and 155 mm or less, and the first point is positioned on an orientation flat with a length of less than 60 mm provided on the outer circumference of the substrate. Original
The GaN substrate according to claim 1, wherein a half-value width of the diffraction peak is less than 0.5 0. Original
The GaN substrate according to claim 1, wherein a low index plane most nearly parallel to the front surface is any crystal plane selected from { 10- 101, { 30-31 }, { 30-3-1 }, {20-21}, {20-2-1}, {30-32}, {30-3-2}, {10-11} and {10-1-1}. Original
(Cu rr ently Amended) The GaN substrate according to claim 1, wherein the GaN substrate is a GaN crystal having concentrations of alkali metals and halogen of less than 1 x 10 15 cm- 3 and an absorption coefficient at 450 nm of 2 cm⁻¹ or less. Currently amended
The GaN substrate according to claim 1, wherein the GaN substrate is a GaN crystal which gives an infrared absorption spectrum where a peak assigned to a gallium vacancy- hydrogen complex is not observed between 3,100 and 3,500 cm⁻¹. Original
The GaN substrate according to claim 3, wherein a half-value width of the diffraction peak is less than 0.5 0. Original
The GaN substrate according to claim 3, wherein a low index plane most nearly parallel to the front surface is any crystal plane selected from { 10- 10}, { 30-31 }, { 30-3-1 }, {20-21}, {20-2-1}, {30-32}, {30-3-2}, {10-11} and {10-1-1}. Original
The GaN substrate according to claim 3, wherein the GaN substrate is a GaN crystal having concentrations of alkali metals and halogen of less than 1 x 10 15 cm- 3 and an absorption coefficient at 450 nm of 2 cm⁻¹ or less. Currently amended
The GaN substrate according to claim 3, wherein the GaN substrate is a GaN crystal which gives an infrared absorption spectrum where a peak assigned to a gallium vacancy- hydrogen complex is not observed between 3,100 and 3,500 cm⁻¹. Original
Layer stacks claimed or described, ordered top of device to substrate.
disk-shaped GaN substrate (non-polar/semi-polar)
Materials described outside the worked examples.
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
θ scan with CuKα1 X-ray (wavelength 0.1542 nm) incident on first point on substrate side surface; 2θ fixed to twice Bragg angle of 28.99° of {11-20} plane; single diffraction peak observed
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
half-value width of XRD diffraction peak ({11-20} theta scan) | — | GaN |
absorption coefficient at 450 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,612,161Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a perspective view illustrating a configuration example of an aggregate seed.
Figure 2 is a perspective view illustrating a state where a bulk GaN crystal is grown on an aggregate seed.
Figure 3 is a perspective view illustrating a disk-shaped GaN substrate with an orientation flat formed thereon.
Figure 4A and
Figure 4B are each a perspective view of a disk-shaped GaN substrate, for describing a "first point".
Figure 5 is a perspective view of a disk-shaped GaN substrate having one of the first points on an orientation flat.
Figures 6A and 6B include cross-sectional views each illustrating a step of slicing GaN substrates from a bulk GaN crystal.
Figure 6B illustrates a state where the bulk GaN crystal is sliced.
Figures 7A and 7B include cross-sectional views each illustrating a step of slicing GaN substrates from a bulk GaN crystal.
Figure 7B illustrates a state where the bulk GaN crystal is sliced.
Figure 8 is a perspective view illustrating a configuration example of an aggregate seed.
Figure 9 includes plan views describing a method of forming an orientation flat in two steps.
Figure 10 is a perspective view illustrating an example of a tile seed.
Figure 11 illustrates an X-ray diffraction pattern.
Figure 12 illustrates a diagram describing an X-ray diffraction measurement method.
Figure 13 illustrates an X-ray diffraction pattern.
Figure 14 is a plan view of a bulk GaN crystal where a margin is provided to the size in a direction perpendicular to the c-axis.
Figure 15 is a perspective view of a GaN (20-21) substrate having a structure where four single crystal regions are arranged in a row along the direction of the orthogonal projection of the c-axis on the front surface.
Figure 16 is a perspective view of a GaN (20-21) substrate having a structure where eight single crystal regions are arranged in two rows in the direction of the orthogonal projection of the c-axis on the front surface.
Figure 17 is a plan view illustrating an example of an aggregate seed.
Figure 18 is a plan view illustrating an example of an aggregate seed.
Figure 19A and
Figure 19B each illustrate an X-ray diffraction pattern.
Figure 20 illustrates an X-ray diffraction pattern.
Figure 21A and
Figure 21B each illustrate an X-ray diffraction pattern. Description of Embodiments [0013] In a GaN crystal, a crystal axis parallel to [0001] and [000-1] is called a "c-axis", a crystal axis parallel to <10-10> is called an " m -axis", and a crystal axis parallel to <11-20> is called an "a-axis". …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The GaN substrate according to claim 1, wherein the first point is positioned on an orientation flat with a length of less than 20 mm provided on the outer circumference of the substrate. SVG 15625019.02-10-2020.K₆GPG₈R₅RXEAPX2.CLM.2.svg 0.16 3.97 Black and white a front surface tilted with a tilt angle of 45 0 or more and 135 0 or less relative to the (0001) plane in a tilt direction within a range of ±50 around a < 1 0-10> direction; and a back surface which is a main surface opposite to the front su r face, wherein the GaN substrate has a diameter of 70 mm or more, and the GaN substrate has on a side surface thereof a first point positioned in a direction perpendicular to the c-axis when viewed from the center of the substrate, and a single diffraction peak appears in an X-ray diffraction pattern obtained by 0 scan in which an X-ray (CuK ai: wavelength: 0.1542 nm) is incident to the first point and the incident angle 0 of the incident X-ray is varied while the 2 0 angle of the diffracted X-ray is fixed to twice the Bra gg angle of 28.99 0 of the {11 -20 } plane. Original
The G aN substrate according to claim 3, wherein the GaN substrate has a plurality of single crystal regions arranged in a row or two rows along the direction of the orthogonal projection of the c-axis on the front surface, the GaN substrate has a diameter of 95 mm or more and 105 mm or less, and each of the plurality of single crystal regions is exposed on both the front surface and the back surface. Original
The GaN substrate according to claim 3, wherein the G aN substrate has a diameter of 105 mm or less, and the first point is positioned on an orientation flat with a length of less than 40 mm provided on the outer circumference of the substrate. Original
The GaN substrate according to claim 3, wherein the GaN substrate has a plurality of single crystal regions arranged in two rows or three rows along the direction of the orthogonal projection of the c-axis on the front surface, the GaN substrate has a diameter of 145 mm or more and 155 mm or less, and each of the plurality of single crystal regions is exposed on both the front surface and the back surface. Previously presented
The GaN substrate according to claim 3, wherein the GaN substrate has a diameter of 145 mm or more and 155 mm or less, and the first point is positioned on an orientation flat with a length of less than 60 mm provided on the outer circumference of the substrate. Original
The GaN substrate according to claim 1, wherein a half-value width of the diffraction peak is less than 0.5 0. Original
The GaN substrate according to claim 1, wherein a low index plane most nearly parallel to the front surface is any crystal plane selected from { 10- 101, { 30-31 }, { 30-3-1 }, {20-21}, {20-2-1}, {30-32}, {30-3-2}, {10-11} and {10-1-1}. Original
(Cu rr ently Amended) The GaN substrate according to claim 1, wherein the GaN substrate is a GaN crystal having concentrations of alkali metals and halogen of less than 1 x 10 15 cm- 3 and an absorption coefficient at 450 nm of 2 cm⁻¹ or less. Currently amended
The GaN substrate according to claim 1, wherein the GaN substrate is a GaN crystal which gives an infrared absorption spectrum where a peak assigned to a gallium vacancy- hydrogen complex is not observed between 3,100 and 3,500 cm⁻¹. Original
The GaN substrate according to claim 3, wherein a half-value width of the diffraction peak is less than 0.5 0. Original
The GaN substrate according to claim 3, wherein a low index plane most nearly parallel to the front surface is any crystal plane selected from { 10- 10}, { 30-31 }, { 30-3-1 }, {20-21}, {20-2-1}, {30-32}, {30-3-2}, {10-11} and {10-1-1}. Original
The GaN substrate according to claim 3, wherein the GaN substrate is a GaN crystal having concentrations of alkali metals and halogen of less than 1 x 10 15 cm- 3 and an absorption coefficient at 450 nm of 2 cm⁻¹ or less. Currently amended
The GaN substrate according to claim 3, wherein the GaN substrate is a GaN crystal which gives an infrared absorption spectrum where a peak assigned to a gallium vacancy- hydrogen complex is not observed between 3,100 and 3,500 cm⁻¹. Original
Layer stacks claimed or described, ordered top of device to substrate.
disk-shaped GaN substrate (non-polar/semi-polar)
Materials described outside the worked examples.
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
θ scan with CuKα1 X-ray (wavelength 0.1542 nm) incident on first point on substrate side surface; 2θ fixed to twice Bragg angle of 28.99° of {11-20} plane; single diffraction peak observed
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
half-value width of XRD diffraction peak ({11-20} theta scan) | — | GaN |
absorption coefficient at 450 nm | — |
Related documents with shared materials, methods, properties, or citations.
IR absorption spectrum; no peak assigned to gallium vacancy-hydrogen complex observed between 3100 and 3500 cm⁻¹
concentrations of alkali metals and halogen | — | GaN |
Thickness | 3100–3500 cm | — |
Thickness | ≤ 20 mm | — |
Thickness | ≤ 40 mm | — |
Thickness | ≤ 60 mm | — |
IR absorption spectrum; no peak assigned to gallium vacancy-hydrogen complex observed between 3100 and 3500 cm⁻¹
concentrations of alkali metals and halogen | — | GaN |
Thickness | 3100–3500 cm | — |
Thickness | ≤ 20 mm | — |
Thickness | ≤ 40 mm | — |
Thickness | ≤ 60 mm | — |
IR absorption spectrum; no peak assigned to gallium vacancy-hydrogen complex observed between 3100 and 3500 cm⁻¹
concentrations of alkali metals and halogen | — | GaN |
Thickness | 3100–3500 cm | — |
Thickness | ≤ 20 mm | — |
Thickness | ≤ 40 mm | — |
Thickness | ≤ 60 mm | — |
IR absorption spectrum; no peak assigned to gallium vacancy-hydrogen complex observed between 3100 and 3500 cm⁻¹
concentrations of alkali metals and halogen | — | GaN |
Thickness | 3100–3500 cm | — |
Thickness | ≤ 20 mm | — |
Thickness | ≤ 40 mm | — |
Thickness | ≤ 60 mm | — |