GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME

Shinsuke FUJIWARA

Patent

Atlas literature

Patent

US 9,153,742

GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME

Shinsuke FUJIWARA

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 3 dependent

1
IndependentGaNGaN-crystal free-standing substrate
Listing of Claims: Claim 1: A GaN substrate causing yellow-light emission, comprising: a ﬁrst crystal region having a ﬁrst intensity of yellow-light emission; and a plurality of second crystal r egi e n regions having a second intensity of yellow-light emission, wherein the ﬁrst intensity is not equal to the second intensity, and the ﬁrst crystal region and the plurality of second crystal regi e n regions being arranged in a same physical plane -the same physical plane having a plurality of th, 0ena °1 regi n and wherein a crystal growth plane of a surface in the GaN substrate of the ﬁrst crystal region is not equal to a crystal growth plane of a surface in the GaN substrate of the plurality of second crystal re gi ons.
1. 2
  Dependent← claim 1GaNGaNGaNGaN-crystal free-standing substrate
  The GaN substrate according to Claim 1, wherein the ﬁrst crystal region has a carbon concentration of 3 x 1016 atoms/cm3 or less, a silicon concentration of 5 x 10 17 atoms/cm3 or more and 1 x 10 18 atoms/cm 3 or less, and an oxygen concentration of 1 x 1017 atoms/c m 3 or less; and the second crystal region has a carbon concentration of 2 x 1016 atoms/cm 3 or less, a silicon concentration of 5 x 10 17 atoms/cm3 or less, and an oxygen concentration of 5 x 10 17 80827827.1 Application No. 13/933,514 Docket No.: 048404-0076-0 1 -US-499733 Amendment dated Page 3 Reply to the Oﬃce Action of atoms/cm3 or more and 2 x 1018 atoms/cm3 or less.
2. 3
  Dependent← claim 1GaNGaNGaNGaN-crystal free-standing substrate
  The GaN substrate according to Claim 1, wherein the ﬁrst crystal region has a carbon concentration of 5 x 10 16 atoms/cm3 or less, a silicon concentration of 5 x 10 1 atoms/cm3 or more and 2 x 10 18 atoms/cm3 or less, and an oxygen concentration of 1 x 1017 atoms/cm3 or less; and the second crystal region has a carbon concentration of 3 x 1016 atoms/cm3 or less, a silicon concentration of 5 x 10 17 atoms/cm3 or less, and an oxygen concentration of 5 x 1017 atoms/cm3 or more and 5 x 1018 atoms/cm3 or less.
3. 4
  Dependent← claim 1GaNGaN-crystal free-standing substrate
  The GaN substrate according to Claim 1, wherein a crystal growth plane of a surface in the GaN substrate of the ﬁrst crystal region is a (0001) plane, and a crystal growth plane of a surface in the GaN substrate of the plurality of second crystal regions is at least one of a {10-11 } plane and a { 11-22 } plane. 80827827.1

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-crystal free-standing substrate

GaNsecond crystal regions (facet-growth, {10-11} and/or {11-22} planes)

GaNfirst crystal region ((0001)-plane-growth)

Materials

Materials described outside the worked examples.

GaN substrate (free-standing)

GaN

Substrate

First Crystal Region (C-Plane Growth)Second Crystal Region (Facet Plane Growth)

Process steps

Additional fabrication and treatment steps described in the patent.

Hvpe Growth

Step 1

Process details

notes:GaN crystal grown by HVPE with (0001) plane and at least one of {10-11} and {11-22} planes as crystal growth planes, except for the side surface of the crystal; substrate formed by processing the grown GaN crystal

method:HVPE

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
carbon concentration — first crystal region (claim 2 preferred)	≤ 30000000000000000 atoms/cm3	GaN
silicon concentration — first crystal region (claim 2 preferred)	500000000000000000–1000000000000000000 atoms/cm3

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME | Matter42 Literature