Abstract

Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass 10 has a wurtzitic crystalline structure and, at 30°C, its elastic constant C₁₁ is from 348 GPa to 365 GPa and its elastic constant C₁₃ is from 90 GPa to 98 GPa; alternatively its elastic constant C₁₁ is from 352 GPa to 362 GPa.

Abstract

Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass 10 has a wurtzitic crystalline structure and, at 30°C, its elastic constant C₁₁ is from 348 GPa to 365 GPa and its elastic constant C₁₃ is from 90 GPa to 98 GPa; alternatively its elastic constant C₁₁ is from 352 GPa to 362 GPa.

Abstract

Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass 10 has a wurtzitic crystalline structure and, at 30°C, its elastic constant C₁₁ is from 348 GPa to 365 GPa and its elastic constant C₁₃ is from 90 GPa to 98 GPa; alternatively its elastic constant C₁₁ is from 352 GPa to 362 GPa.

Abstract

Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass 10 has a wurtzitic crystalline structure and, at 30°C, its elastic constant C₁₁ is from 348 GPa to 365 GPa and its elastic constant C₁₃ is from 90 GPa to 98 GPa; alternatively its elastic constant C₁₁ is from 352 GPa to 362 GPa.