Patent
Atlas literature
Patent
US 12,571,123 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of a crystal production apparatus usable in an embodiment of the present invention.
FIG. 2 is a schematic view for describing a measurement position in PL lifetime measurement with a GaN crystal 45 according to Example 1.
FIG. 3 is a graph representing PL lifetime measurement results with a GaN crystal according to Example 2.
FIG. 4 is a graph representing PL lifetime measurement results with a GaN crystal according to Example 1. 50 MODE FOR CARRYING OUT THE INVENTION In the gallium …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride crystal having a light emission lifetime by time-resolved photoluminescence measurement, of 5 ps or more and 200 ps or less, and satisfying at least one of the following requirement (i) and requirement (ii): (i) an FWHM in a 004 diffraction X-ray rocking curve is 50 arcsec or less at least one position of the crystal; and (ii) a dislocation density is 5×106 cm⁻² or less.
The gallium nitride crystal according to claim 1, wherein the dislocation density is less than 1×106 cm⁻².
The gallium nitride crystal according to claim 1, wherein a hydrogen concentration is 2×1019 atoms/cm3 or less.
The gallium nitride crystal according to claim 1, wherein an oxygen concentration is 2×1019 atoms/cm3 or less.
A gallium nitride substrate obtained by slicing the gallium nitride crystal according to claim 1.
A method for producing a gallium nitride substrate, the method comprising a step of performing selection so as to cut out a region where a light emission lifetime by time-resolved photoluminescence measurement is 5 ps or more and 200 ps or less, and slicing the gallium nitride crystal according to claim 1.
A method for producing a gallium nitride substrate, the method comprising a step of growing a gallium nitride crystal having a thickness of 500 µm or more on a gallium nitride seed, by an ammonothermal method, and cutting out the gallium nitride crystal grown, to a plate shape, to produce a gallium nitride substrate, wherein the gallium nitride substrate has a light emission lifetime by time-resolved photoluminescence measure-ment, of 5 ps or more and 200 ps or less. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material2 process steps
GaN crystals were evaluated using: (1) SIMS for impurity analysis; (2) TRPL with Al₂O3:Ti laser third harmonic (4.65 eV, 100 fs pulse, 8 MHz repetition, 94 µm spot), at 295 K, 120 nJ/cm2 excitation density per pulse, using a synchroscan streak camera with ~1 ps time resolution; (3) 002 and 004 diffraction XRC FWHM measured using Panalytical X'Pert Pro MRD at 45 kV/40 mA with Ge(440)4 monochromator, parallel optical system, PIXcel3D detector, 5 mm × 1 mm beam footprint; (4) dislocation density by etch pit counting after CMP and 89% H₂SO₄ etch at 270°C for 1 hour.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
light emission lifetime (TRPL) — claimed range | 5–200 ps | GaNGaN |
FWHM in 004 diffraction XRC — claimed upper limit |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,571,123 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of a crystal production apparatus usable in an embodiment of the present invention.
FIG. 2 is a schematic view for describing a measurement position in PL lifetime measurement with a GaN crystal 45 according to Example 1.
FIG. 3 is a graph representing PL lifetime measurement results with a GaN crystal according to Example 2.
FIG. 4 is a graph representing PL lifetime measurement results with a GaN crystal according to Example 1. 50 MODE FOR CARRYING OUT THE INVENTION In the gallium …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride crystal having a light emission lifetime by time-resolved photoluminescence measurement, of 5 ps or more and 200 ps or less, and satisfying at least one of the following requirement (i) and requirement (ii): (i) an FWHM in a 004 diffraction X-ray rocking curve is 50 arcsec or less at least one position of the crystal; and (ii) a dislocation density is 5×106 cm⁻² or less.
The gallium nitride crystal according to claim 1, wherein the dislocation density is less than 1×106 cm⁻².
The gallium nitride crystal according to claim 1, wherein a hydrogen concentration is 2×1019 atoms/cm3 or less.
The gallium nitride crystal according to claim 1, wherein an oxygen concentration is 2×1019 atoms/cm3 or less.
A gallium nitride substrate obtained by slicing the gallium nitride crystal according to claim 1.
A method for producing a gallium nitride substrate, the method comprising a step of performing selection so as to cut out a region where a light emission lifetime by time-resolved photoluminescence measurement is 5 ps or more and 200 ps or less, and slicing the gallium nitride crystal according to claim 1.
A method for producing a gallium nitride substrate, the method comprising a step of growing a gallium nitride crystal having a thickness of 500 µm or more on a gallium nitride seed, by an ammonothermal method, and cutting out the gallium nitride crystal grown, to a plate shape, to produce a gallium nitride substrate, wherein the gallium nitride substrate has a light emission lifetime by time-resolved photoluminescence measure-ment, of 5 ps or more and 200 ps or less. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material2 process steps
GaN crystals were evaluated using: (1) SIMS for impurity analysis; (2) TRPL with Al₂O3:Ti laser third harmonic (4.65 eV, 100 fs pulse, 8 MHz repetition, 94 µm spot), at 295 K, 120 nJ/cm2 excitation density per pulse, using a synchroscan streak camera with ~1 ps time resolution; (3) 002 and 004 diffraction XRC FWHM measured using Panalytical X'Pert Pro MRD at 45 kV/40 mA with Ge(440)4 monochromator, parallel optical system, PIXcel3D detector, 5 mm × 1 mm beam footprint; (4) dislocation density by etch pit counting after CMP and 89% H₂SO₄ etch at 270°C for 1 hour.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
light emission lifetime (TRPL) — claimed range | 5–200 ps | GaNGaN |
FWHM in 004 diffraction XRC — claimed upper limit |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,571,123 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of a crystal production apparatus usable in an embodiment of the present invention.
FIG. 2 is a schematic view for describing a measurement position in PL lifetime measurement with a GaN crystal 45 according to Example 1.
FIG. 3 is a graph representing PL lifetime measurement results with a GaN crystal according to Example 2.
FIG. 4 is a graph representing PL lifetime measurement results with a GaN crystal according to Example 1. 50 MODE FOR CARRYING OUT THE INVENTION In the gallium …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride crystal having a light emission lifetime by time-resolved photoluminescence measurement, of 5 ps or more and 200 ps or less, and satisfying at least one of the following requirement (i) and requirement (ii): (i) an FWHM in a 004 diffraction X-ray rocking curve is 50 arcsec or less at least one position of the crystal; and (ii) a dislocation density is 5×106 cm⁻² or less.
The gallium nitride crystal according to claim 1, wherein the dislocation density is less than 1×106 cm⁻².
The gallium nitride crystal according to claim 1, wherein a hydrogen concentration is 2×1019 atoms/cm3 or less.
The gallium nitride crystal according to claim 1, wherein an oxygen concentration is 2×1019 atoms/cm3 or less.
A gallium nitride substrate obtained by slicing the gallium nitride crystal according to claim 1.
A method for producing a gallium nitride substrate, the method comprising a step of performing selection so as to cut out a region where a light emission lifetime by time-resolved photoluminescence measurement is 5 ps or more and 200 ps or less, and slicing the gallium nitride crystal according to claim 1.
A method for producing a gallium nitride substrate, the method comprising a step of growing a gallium nitride crystal having a thickness of 500 µm or more on a gallium nitride seed, by an ammonothermal method, and cutting out the gallium nitride crystal grown, to a plate shape, to produce a gallium nitride substrate, wherein the gallium nitride substrate has a light emission lifetime by time-resolved photoluminescence measure-ment, of 5 ps or more and 200 ps or less. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material2 process steps
GaN crystals were evaluated using: (1) SIMS for impurity analysis; (2) TRPL with Al₂O3:Ti laser third harmonic (4.65 eV, 100 fs pulse, 8 MHz repetition, 94 µm spot), at 295 K, 120 nJ/cm2 excitation density per pulse, using a synchroscan streak camera with ~1 ps time resolution; (3) 002 and 004 diffraction XRC FWHM measured using Panalytical X'Pert Pro MRD at 45 kV/40 mA with Ge(440)4 monochromator, parallel optical system, PIXcel3D detector, 5 mm × 1 mm beam footprint; (4) dislocation density by etch pit counting after CMP and 89% H₂SO₄ etch at 270°C for 1 hour.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
light emission lifetime (TRPL) — claimed range | 5–200 ps | GaNGaN |
FWHM in 004 diffraction XRC — claimed upper limit |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,571,123 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view of a crystal production apparatus usable in an embodiment of the present invention.
FIG. 2 is a schematic view for describing a measurement position in PL lifetime measurement with a GaN crystal 45 according to Example 1.
FIG. 3 is a graph representing PL lifetime measurement results with a GaN crystal according to Example 2.
FIG. 4 is a graph representing PL lifetime measurement results with a GaN crystal according to Example 1. 50 MODE FOR CARRYING OUT THE INVENTION In the gallium …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride crystal having a light emission lifetime by time-resolved photoluminescence measurement, of 5 ps or more and 200 ps or less, and satisfying at least one of the following requirement (i) and requirement (ii): (i) an FWHM in a 004 diffraction X-ray rocking curve is 50 arcsec or less at least one position of the crystal; and (ii) a dislocation density is 5×106 cm⁻² or less.
The gallium nitride crystal according to claim 1, wherein the dislocation density is less than 1×106 cm⁻².
The gallium nitride crystal according to claim 1, wherein a hydrogen concentration is 2×1019 atoms/cm3 or less.
The gallium nitride crystal according to claim 1, wherein an oxygen concentration is 2×1019 atoms/cm3 or less.
A gallium nitride substrate obtained by slicing the gallium nitride crystal according to claim 1.
A method for producing a gallium nitride substrate, the method comprising a step of performing selection so as to cut out a region where a light emission lifetime by time-resolved photoluminescence measurement is 5 ps or more and 200 ps or less, and slicing the gallium nitride crystal according to claim 1.
A method for producing a gallium nitride substrate, the method comprising a step of growing a gallium nitride crystal having a thickness of 500 µm or more on a gallium nitride seed, by an ammonothermal method, and cutting out the gallium nitride crystal grown, to a plate shape, to produce a gallium nitride substrate, wherein the gallium nitride substrate has a light emission lifetime by time-resolved photoluminescence measure-ment, of 5 ps or more and 200 ps or less. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material2 process steps
GaN crystals were evaluated using: (1) SIMS for impurity analysis; (2) TRPL with Al₂O3:Ti laser third harmonic (4.65 eV, 100 fs pulse, 8 MHz repetition, 94 µm spot), at 295 K, 120 nJ/cm2 excitation density per pulse, using a synchroscan streak camera with ~1 ps time resolution; (3) 002 and 004 diffraction XRC FWHM measured using Panalytical X'Pert Pro MRD at 45 kV/40 mA with Ge(440)4 monochromator, parallel optical system, PIXcel3D detector, 5 mm × 1 mm beam footprint; (4) dislocation density by etch pit counting after CMP and 89% H₂SO₄ etch at 270°C for 1 hour.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
light emission lifetime (TRPL) — claimed range | 5–200 ps | GaNGaN |
FWHM in 004 diffraction XRC — claimed upper limit |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
| ≤ 50 arcsec |
GaN |
dislocation density — claimed upper limit (claim 1) | ≤ 5000000 cm⁻² | GaN |
dislocation density — claimed upper limit (claim 2) | ≤ 1000000 cm⁻² | GaN |
hydrogen concentration — claimed upper limit | ≤ 20000000000000000000 atoms/cm3 | GaN |
oxygen concentration — claimed upper limit | ≤ 20000000000000000000 atoms/cm3 | GaN |
Thickness | 400–470 nm | — |
Cited non-patent literature · 2
| ≤ 50 arcsec |
GaN |
dislocation density — claimed upper limit (claim 1) | ≤ 5000000 cm⁻² | GaN |
dislocation density — claimed upper limit (claim 2) | ≤ 1000000 cm⁻² | GaN |
hydrogen concentration — claimed upper limit | ≤ 20000000000000000000 atoms/cm3 | GaN |
oxygen concentration — claimed upper limit | ≤ 20000000000000000000 atoms/cm3 | GaN |
Thickness | 400–470 nm | — |
Cited non-patent literature · 2
| ≤ 50 arcsec |
GaN |
dislocation density — claimed upper limit (claim 1) | ≤ 5000000 cm⁻² | GaN |
dislocation density — claimed upper limit (claim 2) | ≤ 1000000 cm⁻² | GaN |
hydrogen concentration — claimed upper limit | ≤ 20000000000000000000 atoms/cm3 | GaN |
oxygen concentration — claimed upper limit | ≤ 20000000000000000000 atoms/cm3 | GaN |
Thickness | 400–470 nm | — |
Cited non-patent literature · 2
| ≤ 50 arcsec |
GaN |
dislocation density — claimed upper limit (claim 1) | ≤ 5000000 cm⁻² | GaN |
dislocation density — claimed upper limit (claim 2) | ≤ 1000000 cm⁻² | GaN |
hydrogen concentration — claimed upper limit | ≤ 20000000000000000000 atoms/cm3 | GaN |
oxygen concentration — claimed upper limit | ≤ 20000000000000000000 atoms/cm3 | GaN |
Thickness | 400–470 nm | — |
Cited non-patent literature · 2
