Patent
US 8,791,499GaN CONTAINING OPTICAL DEVICES AND METHOD WITH ESD STABILITY
Rajat Sharma, Eric M. Hall
Soraa, Inc.·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,791,499Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows a simplified diagram of a cross sectional view of a sample LED device structure fabricated on a bulk GaN substrate wafer according to an embodiment of the present invention;
Figure 2 is a simplified cross-sectional view illustrating an optical device of the prior art;
Figure 3 is a simplified cross sectional view illustrating an optical device according to an embodiment of the present invention;
Figure 4 is a simplified plot of ESD voltage rating against defect density according to an embodiment of the present invention;
Figure 5 is a simplified diagram of an equivalent circuit simulating the electro-static discharge that is used to test the ESD voltage breakdown characteristics of the LED according to an embodiment of the present invention; and
Figure 6 is a simplified table of the various classifications of a device based upon the electro-static discharge characteristics tested under the human model circuit according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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An optical device compris ing a gal li um ni tride substrate structure, the gal li um ni tride substrate structure inc lud in g a surface region, an epitaxial layer overly in g the surface region, a p-n j unction formed with in a portion of the epitaxial layer, one or more plane or lin e defects spatially configured in a manner to be in tersect in g one or more spatial portions of the p-n j unction, the one or more plane or lin e defects be ing characte n zed by a spatial density of less than 1 x 10 4 cm⁻², and an electrostatic discharge voltage rat in g of at least 7 kvolts, where in the surface region is characte n zed by an m -plane that is angled rang in g from about 80 degrees to about 100 degrees from the polar o n entation of the c plane toward an (h k 1) plane where in 1 i s 0 and at least one of h and k is non-zero
The device of claim 11 where in the gal li um nitnde substrate structure has an area of at least 4 square mil li meters
The device of claim 11 where in the surface region is characte n zed as an m -plane previously presented
The device of claim 11 where in the gal li um nitnde substrate structure comp n ses an n-type impu n ty characteristic 2 App l No 12/785,953 PATENT Am dt dated Reply to Office Action of
The device of claim 11 where in the epitaxial layer comp n ses an n-type type characteristic and an p-type characteristic
The device of claim 11 where in the epitaxial layer comp n ses an n-type gallium ni tride conta inin g material, an overly in g InGaN layer, and an overly in g p-type gallium nitn de conta inin g material
The device of claim 11 where in the optical device is a light emitt in g diode
The device of claim 11 where in the optical device is a laser device
The device of claim 11 where in the p-n j unction comprises a p- i -n j unction 3
canceled
Layer stacks claimed or described, ordered top of device to substrate.
optical device on nonpolar/semipolar GaN substrate with ESD stability
Materials described outside the worked examples.
gallium nitride
GaN
n-type gallium nitride containing material
InGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrostatic discharge voltage rating | 7 kV | GaN |
plane or line defect spatial density (claimed upper bound) | 10000 cm⁻² |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,791,499Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows a simplified diagram of a cross sectional view of a sample LED device structure fabricated on a bulk GaN substrate wafer according to an embodiment of the present invention;
Figure 2 is a simplified cross-sectional view illustrating an optical device of the prior art;
Figure 3 is a simplified cross sectional view illustrating an optical device according to an embodiment of the present invention;
Figure 4 is a simplified plot of ESD voltage rating against defect density according to an embodiment of the present invention;
Figure 5 is a simplified diagram of an equivalent circuit simulating the electro-static discharge that is used to test the ESD voltage breakdown characteristics of the LED according to an embodiment of the present invention; and
Figure 6 is a simplified table of the various classifications of a device based upon the electro-static discharge characteristics tested under the human model circuit according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
An optical device compris ing a gal li um ni tride substrate structure, the gal li um ni tride substrate structure inc lud in g a surface region, an epitaxial layer overly in g the surface region, a p-n j unction formed with in a portion of the epitaxial layer, one or more plane or lin e defects spatially configured in a manner to be in tersect in g one or more spatial portions of the p-n j unction, the one or more plane or lin e defects be ing characte n zed by a spatial density of less than 1 x 10 4 cm⁻², and an electrostatic discharge voltage rat in g of at least 7 kvolts, where in the surface region is characte n zed by an m -plane that is angled rang in g from about 80 degrees to about 100 degrees from the polar o n entation of the c plane toward an (h k 1) plane where in 1 i s 0 and at least one of h and k is non-zero
The device of claim 11 where in the gal li um nitnde substrate structure has an area of at least 4 square mil li meters
The device of claim 11 where in the surface region is characte n zed as an m -plane previously presented
The device of claim 11 where in the gal li um nitnde substrate structure comp n ses an n-type impu n ty characteristic 2 App l No 12/785,953 PATENT Am dt dated Reply to Office Action of
The device of claim 11 where in the epitaxial layer comp n ses an n-type type characteristic and an p-type characteristic
The device of claim 11 where in the epitaxial layer comp n ses an n-type gallium ni tride conta inin g material, an overly in g InGaN layer, and an overly in g p-type gallium nitn de conta inin g material
The device of claim 11 where in the optical device is a light emitt in g diode
The device of claim 11 where in the optical device is a laser device
The device of claim 11 where in the p-n j unction comprises a p- i -n j unction 3
canceled
Layer stacks claimed or described, ordered top of device to substrate.
optical device on nonpolar/semipolar GaN substrate with ESD stability
Materials described outside the worked examples.
gallium nitride
GaN
n-type gallium nitride containing material
InGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrostatic discharge voltage rating | 7 kV | GaN |
plane or line defect spatial density (claimed upper bound) | 10000 cm⁻² |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,791,499Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows a simplified diagram of a cross sectional view of a sample LED device structure fabricated on a bulk GaN substrate wafer according to an embodiment of the present invention;
Figure 2 is a simplified cross-sectional view illustrating an optical device of the prior art;
Figure 3 is a simplified cross sectional view illustrating an optical device according to an embodiment of the present invention;
Figure 4 is a simplified plot of ESD voltage rating against defect density according to an embodiment of the present invention;
Figure 5 is a simplified diagram of an equivalent circuit simulating the electro-static discharge that is used to test the ESD voltage breakdown characteristics of the LED according to an embodiment of the present invention; and
Figure 6 is a simplified table of the various classifications of a device based upon the electro-static discharge characteristics tested under the human model circuit according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
An optical device compris ing a gal li um ni tride substrate structure, the gal li um ni tride substrate structure inc lud in g a surface region, an epitaxial layer overly in g the surface region, a p-n j unction formed with in a portion of the epitaxial layer, one or more plane or lin e defects spatially configured in a manner to be in tersect in g one or more spatial portions of the p-n j unction, the one or more plane or lin e defects be ing characte n zed by a spatial density of less than 1 x 10 4 cm⁻², and an electrostatic discharge voltage rat in g of at least 7 kvolts, where in the surface region is characte n zed by an m -plane that is angled rang in g from about 80 degrees to about 100 degrees from the polar o n entation of the c plane toward an (h k 1) plane where in 1 i s 0 and at least one of h and k is non-zero
The device of claim 11 where in the gal li um nitnde substrate structure has an area of at least 4 square mil li meters
The device of claim 11 where in the surface region is characte n zed as an m -plane previously presented
The device of claim 11 where in the gal li um nitnde substrate structure comp n ses an n-type impu n ty characteristic 2 App l No 12/785,953 PATENT Am dt dated Reply to Office Action of
The device of claim 11 where in the epitaxial layer comp n ses an n-type type characteristic and an p-type characteristic
The device of claim 11 where in the epitaxial layer comp n ses an n-type gallium ni tride conta inin g material, an overly in g InGaN layer, and an overly in g p-type gallium nitn de conta inin g material
The device of claim 11 where in the optical device is a light emitt in g diode
The device of claim 11 where in the optical device is a laser device
The device of claim 11 where in the p-n j unction comprises a p- i -n j unction 3
canceled
Layer stacks claimed or described, ordered top of device to substrate.
optical device on nonpolar/semipolar GaN substrate with ESD stability
Materials described outside the worked examples.
gallium nitride
GaN
n-type gallium nitride containing material
InGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrostatic discharge voltage rating | 7 kV | GaN |
plane or line defect spatial density (claimed upper bound) | 10000 cm⁻² |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,791,499Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows a simplified diagram of a cross sectional view of a sample LED device structure fabricated on a bulk GaN substrate wafer according to an embodiment of the present invention;
Figure 2 is a simplified cross-sectional view illustrating an optical device of the prior art;
Figure 3 is a simplified cross sectional view illustrating an optical device according to an embodiment of the present invention;
Figure 4 is a simplified plot of ESD voltage rating against defect density according to an embodiment of the present invention;
Figure 5 is a simplified diagram of an equivalent circuit simulating the electro-static discharge that is used to test the ESD voltage breakdown characteristics of the LED according to an embodiment of the present invention; and
Figure 6 is a simplified table of the various classifications of a device based upon the electro-static discharge characteristics tested under the human model circuit according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
An optical device compris ing a gal li um ni tride substrate structure, the gal li um ni tride substrate structure inc lud in g a surface region, an epitaxial layer overly in g the surface region, a p-n j unction formed with in a portion of the epitaxial layer, one or more plane or lin e defects spatially configured in a manner to be in tersect in g one or more spatial portions of the p-n j unction, the one or more plane or lin e defects be ing characte n zed by a spatial density of less than 1 x 10 4 cm⁻², and an electrostatic discharge voltage rat in g of at least 7 kvolts, where in the surface region is characte n zed by an m -plane that is angled rang in g from about 80 degrees to about 100 degrees from the polar o n entation of the c plane toward an (h k 1) plane where in 1 i s 0 and at least one of h and k is non-zero
The device of claim 11 where in the gal li um nitnde substrate structure has an area of at least 4 square mil li meters
The device of claim 11 where in the surface region is characte n zed as an m -plane previously presented
The device of claim 11 where in the gal li um nitnde substrate structure comp n ses an n-type impu n ty characteristic 2 App l No 12/785,953 PATENT Am dt dated Reply to Office Action of
The device of claim 11 where in the epitaxial layer comp n ses an n-type type characteristic and an p-type characteristic
The device of claim 11 where in the epitaxial layer comp n ses an n-type gallium ni tride conta inin g material, an overly in g InGaN layer, and an overly in g p-type gallium nitn de conta inin g material
The device of claim 11 where in the optical device is a light emitt in g diode
The device of claim 11 where in the optical device is a laser device
The device of claim 11 where in the p-n j unction comprises a p- i -n j unction 3
canceled
Layer stacks claimed or described, ordered top of device to substrate.
optical device on nonpolar/semipolar GaN substrate with ESD stability
Materials described outside the worked examples.
gallium nitride
GaN
n-type gallium nitride containing material
InGaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrostatic discharge voltage rating | 7 kV | GaN |
plane or line defect spatial density (claimed upper bound) | 10000 cm⁻² |
Related documents with shared materials, methods, properties, or citations.
p-type gallium nitride containing material
Thickness | 465–700 nm | — |
Thickness | 700–3077 nm | — |
Thickness | 3333–6667 nm | — |
Thickness | 0.05–50 µm | — |
Thickness | 1–20 nm | — |
Thickness | 5–500 nm | — |
Thickness | 20–500 nm | — |
Thickness | 1–30 nm | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 5 cm | — |
Thickness | ≥ 3 mm | — |
Thickness | ≥ 1 cm | — |
p-type gallium nitride containing material
Thickness | 465–700 nm | — |
Thickness | 700–3077 nm | — |
Thickness | 3333–6667 nm | — |
Thickness | 0.05–50 µm | — |
Thickness | 1–20 nm | — |
Thickness | 5–500 nm | — |
Thickness | 20–500 nm | — |
Thickness | 1–30 nm | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 5 cm | — |
Thickness | ≥ 3 mm | — |
Thickness | ≥ 1 cm | — |
p-type gallium nitride containing material
Thickness | 465–700 nm | — |
Thickness | 700–3077 nm | — |
Thickness | 3333–6667 nm | — |
Thickness | 0.05–50 µm | — |
Thickness | 1–20 nm | — |
Thickness | 5–500 nm | — |
Thickness | 20–500 nm | — |
Thickness | 1–30 nm | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 5 cm | — |
Thickness | ≥ 3 mm | — |
Thickness | ≥ 1 cm | — |
p-type gallium nitride containing material
Thickness | 465–700 nm | — |
Thickness | 700–3077 nm | — |
Thickness | 3333–6667 nm | — |
Thickness | 0.05–50 µm | — |
Thickness | 1–20 nm | — |
Thickness | 5–500 nm | — |
Thickness | 20–500 nm | — |
Thickness | 1–30 nm | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 5 cm | — |
Thickness | ≥ 3 mm | — |
Thickness | ≥ 1 cm | — |