Patent
Atlas literature
Patent
US 12,640,720 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic diagram of an embodiment of a power electronics device that includes a first semicon- ductor die with a GaN power transistor and …
FIG. 2 illustrates a schematic diagram of the power electronics device, according to another embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A power electronics device, comprising: a first semiconductor die comprising: a first current sense terminal; a second current sense terminal; a main GaN (gallium nitride) power transistor; a first GaN current sense transistor having a source electrically connected to the second current sense terminal and a drain electrically connected to a drain of the main GaN power transistor; a second GaN current sense transistor having a source electrically connected to a source of the main GaN power transistor; a diode device electrically connected in series between the drain of the main GaN power transistor and a drain of the second GaN current sense transistor; and a voltage protection device electrically connecting the drain of the second GaN current sense transistor to the first current sense terminal; a second semiconductor die comprising a current sense circuit and a short circuit detection circuit electrically connected to the first and second current sense termi-nals of the first semiconductor die, wherein the short circuit detection circuit is configured to detect when the drain current of the main GaN power transistor exceeds a predetermined value and when the main GaN power transistor is in saturation.
The power electronics device of claim 1, wherein the short circuit detection circuit comprises: 10 a first comparator having a first input electrically con-nected to the first current sense terminal of the first semiconductor die and a second input electrically con-nected to a first reference voltage source; and a second comparator having a first input electrically connected to the second current sense terminal of the first semiconductor die and a second input electrically connected to a second reference voltage source, wherein an output of the first comparator indicates when the main GaN power transistor is in saturation, wherein an output of the second comparator indicates when the drain current of the main GaN power tran-sistor exceeds the predetermined value.
The power electronics device of claim 1, wherein the diode device is a GaN transistor having a drain electrically connected to the drain of the main GaN power transistor, a source electrically connected to the drain of the second GaN current sense transistor, and a gate electrically connected to the drain of the GaN transistor.
The power electronics device of claim 1, wherein the diode device is a pn diode having an anode electrically connected to the drain of the main GaN power transistor and a cathode electrically connected to the drain of the second GaN current sense transistor.
The power electronics device of claim 1, wherein the diode device is in reverse conduction when the main GaN power transistor is on, wherein the diode device enters forward conduction when the main GaN power transistor enters saturation, and wherein current flows into the voltage protection device from the diode device when the diode device enters forward conduction.
The power electronics device of claim 1, wherein the voltage protection device is a GaN transistor having a drain electrically connected to the drain of the second GaN current sense transistor, a source electrically connected to the first current sense terminal of the first semiconductor die, and a gate electrically connected to a gate terminal of the first semiconductor die, wherein the gate terminal of the first semiconductor die also is electrically connected to a gate of the main GaN power transistor and a gate of the first GaN current sense transistor.
The power electronics device of claim 1, wherein the current sense circuit comprises: an operational amplifier having a first input electrically connected to the first current sense terminal of the first semiconductor die and a second input electrically con-nected to the second current sense terminal of the first semiconductor die; and a current source circuit configured to output a current sense signal based on an output of the operational amplifier, wherein a magnitude of the current sense signal is generated to minimize a voltage difference across the first and second current sense terminals of the first semiconductor die.
A sensing method for a GaN (gallium nitride) die that includes a main GaN power transistor, a first GaN current sense transistor having a source electrically connected to a second current sense terminal of the GaN die and a drain electrically connected to a drain of the main GaN power transistor, a second GaN current sense transistor having a source electrically connected to a source of the main GaN power transistor, a diode device electrically connected in series between the drain of the main GaN power transistor and a drain of the second GaN current sense transistor, and a voltage protection device electrically connecting the drain of the second GaN current sense transistor to a first current sense terminal of the GaN Die, the sensing method com-prising: sensing a scaled-down replica of current flowing in the main GaN power transistor based on a voltage at the first current sense terminal of the GaN die and a voltage at the second current sense terminal of the GaN die; detecting when the main GaN power transistor is in saturation based on the voltage at the first current sense terminal of the GaN die and a first reference voltage; and detecting when the drain current of the main GaN power transistor exceeds a predetermined value based on the voltage at the second current sense terminal of the GaN die and a second reference voltage.
The sensing method of claim 13, wherein detecting when the main GaN power transistor is in saturation comprises: inputting the voltage at the first current sense terminal of the GaN die and the first reference voltage to a first comparator on a separate die from the GaN die; and outputting, via the first comparator, an indication of when the main GaN power transistor is in saturation, wherein detecting when the drain current of the main GaN power transistor exceeds the predetermined value com-prises: inputting the voltage at the second current sense ter-minal of the GaN die and the second reference voltage to a second comparator on the die as the first comparator; and outputting, via the second comparator, an indication of when the drain current of the main GaN power transistor exceeds the predetermined value.
Layer stacks claimed or described, ordered top of device to substrate.
GaN power electronics device with dual-die current sensing and short-circuit detection
Materials described outside the worked examples.
GaN (gallium nitride)
GaN
p-GaN gate injection transistor (GIT)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates a schematic diagram of an embodiment of a power electronics device that includes a first semicon- ductor die with a GaN power transistor and …
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
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Patent
Atlas literature
Patent
US 12,640,720 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic diagram of an embodiment of a power electronics device that includes a first semicon- ductor die with a GaN power transistor and …
FIG. 2 illustrates a schematic diagram of the power electronics device, according to another embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A power electronics device, comprising: a first semiconductor die comprising: a first current sense terminal; a second current sense terminal; a main GaN (gallium nitride) power transistor; a first GaN current sense transistor having a source electrically connected to the second current sense terminal and a drain electrically connected to a drain of the main GaN power transistor; a second GaN current sense transistor having a source electrically connected to a source of the main GaN power transistor; a diode device electrically connected in series between the drain of the main GaN power transistor and a drain of the second GaN current sense transistor; and a voltage protection device electrically connecting the drain of the second GaN current sense transistor to the first current sense terminal; a second semiconductor die comprising a current sense circuit and a short circuit detection circuit electrically connected to the first and second current sense termi-nals of the first semiconductor die, wherein the short circuit detection circuit is configured to detect when the drain current of the main GaN power transistor exceeds a predetermined value and when the main GaN power transistor is in saturation.
The power electronics device of claim 1, wherein the short circuit detection circuit comprises: 10 a first comparator having a first input electrically con-nected to the first current sense terminal of the first semiconductor die and a second input electrically con-nected to a first reference voltage source; and a second comparator having a first input electrically connected to the second current sense terminal of the first semiconductor die and a second input electrically connected to a second reference voltage source, wherein an output of the first comparator indicates when the main GaN power transistor is in saturation, wherein an output of the second comparator indicates when the drain current of the main GaN power tran-sistor exceeds the predetermined value.
The power electronics device of claim 1, wherein the diode device is a GaN transistor having a drain electrically connected to the drain of the main GaN power transistor, a source electrically connected to the drain of the second GaN current sense transistor, and a gate electrically connected to the drain of the GaN transistor.
The power electronics device of claim 1, wherein the diode device is a pn diode having an anode electrically connected to the drain of the main GaN power transistor and a cathode electrically connected to the drain of the second GaN current sense transistor.
The power electronics device of claim 1, wherein the diode device is in reverse conduction when the main GaN power transistor is on, wherein the diode device enters forward conduction when the main GaN power transistor enters saturation, and wherein current flows into the voltage protection device from the diode device when the diode device enters forward conduction.
The power electronics device of claim 1, wherein the voltage protection device is a GaN transistor having a drain electrically connected to the drain of the second GaN current sense transistor, a source electrically connected to the first current sense terminal of the first semiconductor die, and a gate electrically connected to a gate terminal of the first semiconductor die, wherein the gate terminal of the first semiconductor die also is electrically connected to a gate of the main GaN power transistor and a gate of the first GaN current sense transistor.
The power electronics device of claim 1, wherein the current sense circuit comprises: an operational amplifier having a first input electrically connected to the first current sense terminal of the first semiconductor die and a second input electrically con-nected to the second current sense terminal of the first semiconductor die; and a current source circuit configured to output a current sense signal based on an output of the operational amplifier, wherein a magnitude of the current sense signal is generated to minimize a voltage difference across the first and second current sense terminals of the first semiconductor die.
A sensing method for a GaN (gallium nitride) die that includes a main GaN power transistor, a first GaN current sense transistor having a source electrically connected to a second current sense terminal of the GaN die and a drain electrically connected to a drain of the main GaN power transistor, a second GaN current sense transistor having a source electrically connected to a source of the main GaN power transistor, a diode device electrically connected in series between the drain of the main GaN power transistor and a drain of the second GaN current sense transistor, and a voltage protection device electrically connecting the drain of the second GaN current sense transistor to a first current sense terminal of the GaN Die, the sensing method com-prising: sensing a scaled-down replica of current flowing in the main GaN power transistor based on a voltage at the first current sense terminal of the GaN die and a voltage at the second current sense terminal of the GaN die; detecting when the main GaN power transistor is in saturation based on the voltage at the first current sense terminal of the GaN die and a first reference voltage; and detecting when the drain current of the main GaN power transistor exceeds a predetermined value based on the voltage at the second current sense terminal of the GaN die and a second reference voltage.
The sensing method of claim 13, wherein detecting when the main GaN power transistor is in saturation comprises: inputting the voltage at the first current sense terminal of the GaN die and the first reference voltage to a first comparator on a separate die from the GaN die; and outputting, via the first comparator, an indication of when the main GaN power transistor is in saturation, wherein detecting when the drain current of the main GaN power transistor exceeds the predetermined value com-prises: inputting the voltage at the second current sense ter-minal of the GaN die and the second reference voltage to a second comparator on the die as the first comparator; and outputting, via the second comparator, an indication of when the drain current of the main GaN power transistor exceeds the predetermined value.
Layer stacks claimed or described, ordered top of device to substrate.
GaN power electronics device with dual-die current sensing and short-circuit detection
Materials described outside the worked examples.
GaN (gallium nitride)
GaN
p-GaN gate injection transistor (GIT)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates a schematic diagram of an embodiment of a power electronics device that includes a first semicon- ductor die with a GaN power transistor and …
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,640,720 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic diagram of an embodiment of a power electronics device that includes a first semicon- ductor die with a GaN power transistor and …
FIG. 2 illustrates a schematic diagram of the power electronics device, according to another embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A power electronics device, comprising: a first semiconductor die comprising: a first current sense terminal; a second current sense terminal; a main GaN (gallium nitride) power transistor; a first GaN current sense transistor having a source electrically connected to the second current sense terminal and a drain electrically connected to a drain of the main GaN power transistor; a second GaN current sense transistor having a source electrically connected to a source of the main GaN power transistor; a diode device electrically connected in series between the drain of the main GaN power transistor and a drain of the second GaN current sense transistor; and a voltage protection device electrically connecting the drain of the second GaN current sense transistor to the first current sense terminal; a second semiconductor die comprising a current sense circuit and a short circuit detection circuit electrically connected to the first and second current sense termi-nals of the first semiconductor die, wherein the short circuit detection circuit is configured to detect when the drain current of the main GaN power transistor exceeds a predetermined value and when the main GaN power transistor is in saturation.
The power electronics device of claim 1, wherein the short circuit detection circuit comprises: 10 a first comparator having a first input electrically con-nected to the first current sense terminal of the first semiconductor die and a second input electrically con-nected to a first reference voltage source; and a second comparator having a first input electrically connected to the second current sense terminal of the first semiconductor die and a second input electrically connected to a second reference voltage source, wherein an output of the first comparator indicates when the main GaN power transistor is in saturation, wherein an output of the second comparator indicates when the drain current of the main GaN power tran-sistor exceeds the predetermined value.
The power electronics device of claim 1, wherein the diode device is a GaN transistor having a drain electrically connected to the drain of the main GaN power transistor, a source electrically connected to the drain of the second GaN current sense transistor, and a gate electrically connected to the drain of the GaN transistor.
The power electronics device of claim 1, wherein the diode device is a pn diode having an anode electrically connected to the drain of the main GaN power transistor and a cathode electrically connected to the drain of the second GaN current sense transistor.
The power electronics device of claim 1, wherein the diode device is in reverse conduction when the main GaN power transistor is on, wherein the diode device enters forward conduction when the main GaN power transistor enters saturation, and wherein current flows into the voltage protection device from the diode device when the diode device enters forward conduction.
The power electronics device of claim 1, wherein the voltage protection device is a GaN transistor having a drain electrically connected to the drain of the second GaN current sense transistor, a source electrically connected to the first current sense terminal of the first semiconductor die, and a gate electrically connected to a gate terminal of the first semiconductor die, wherein the gate terminal of the first semiconductor die also is electrically connected to a gate of the main GaN power transistor and a gate of the first GaN current sense transistor.
The power electronics device of claim 1, wherein the current sense circuit comprises: an operational amplifier having a first input electrically connected to the first current sense terminal of the first semiconductor die and a second input electrically con-nected to the second current sense terminal of the first semiconductor die; and a current source circuit configured to output a current sense signal based on an output of the operational amplifier, wherein a magnitude of the current sense signal is generated to minimize a voltage difference across the first and second current sense terminals of the first semiconductor die.
A sensing method for a GaN (gallium nitride) die that includes a main GaN power transistor, a first GaN current sense transistor having a source electrically connected to a second current sense terminal of the GaN die and a drain electrically connected to a drain of the main GaN power transistor, a second GaN current sense transistor having a source electrically connected to a source of the main GaN power transistor, a diode device electrically connected in series between the drain of the main GaN power transistor and a drain of the second GaN current sense transistor, and a voltage protection device electrically connecting the drain of the second GaN current sense transistor to a first current sense terminal of the GaN Die, the sensing method com-prising: sensing a scaled-down replica of current flowing in the main GaN power transistor based on a voltage at the first current sense terminal of the GaN die and a voltage at the second current sense terminal of the GaN die; detecting when the main GaN power transistor is in saturation based on the voltage at the first current sense terminal of the GaN die and a first reference voltage; and detecting when the drain current of the main GaN power transistor exceeds a predetermined value based on the voltage at the second current sense terminal of the GaN die and a second reference voltage.
The sensing method of claim 13, wherein detecting when the main GaN power transistor is in saturation comprises: inputting the voltage at the first current sense terminal of the GaN die and the first reference voltage to a first comparator on a separate die from the GaN die; and outputting, via the first comparator, an indication of when the main GaN power transistor is in saturation, wherein detecting when the drain current of the main GaN power transistor exceeds the predetermined value com-prises: inputting the voltage at the second current sense ter-minal of the GaN die and the second reference voltage to a second comparator on the die as the first comparator; and outputting, via the second comparator, an indication of when the drain current of the main GaN power transistor exceeds the predetermined value.
Layer stacks claimed or described, ordered top of device to substrate.
GaN power electronics device with dual-die current sensing and short-circuit detection
Materials described outside the worked examples.
GaN (gallium nitride)
GaN
p-GaN gate injection transistor (GIT)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates a schematic diagram of an embodiment of a power electronics device that includes a first semicon- ductor die with a GaN power transistor and …
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,640,720 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic diagram of an embodiment of a power electronics device that includes a first semicon- ductor die with a GaN power transistor and …
FIG. 2 illustrates a schematic diagram of the power electronics device, according to another embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A power electronics device, comprising: a first semiconductor die comprising: a first current sense terminal; a second current sense terminal; a main GaN (gallium nitride) power transistor; a first GaN current sense transistor having a source electrically connected to the second current sense terminal and a drain electrically connected to a drain of the main GaN power transistor; a second GaN current sense transistor having a source electrically connected to a source of the main GaN power transistor; a diode device electrically connected in series between the drain of the main GaN power transistor and a drain of the second GaN current sense transistor; and a voltage protection device electrically connecting the drain of the second GaN current sense transistor to the first current sense terminal; a second semiconductor die comprising a current sense circuit and a short circuit detection circuit electrically connected to the first and second current sense termi-nals of the first semiconductor die, wherein the short circuit detection circuit is configured to detect when the drain current of the main GaN power transistor exceeds a predetermined value and when the main GaN power transistor is in saturation.
The power electronics device of claim 1, wherein the short circuit detection circuit comprises: 10 a first comparator having a first input electrically con-nected to the first current sense terminal of the first semiconductor die and a second input electrically con-nected to a first reference voltage source; and a second comparator having a first input electrically connected to the second current sense terminal of the first semiconductor die and a second input electrically connected to a second reference voltage source, wherein an output of the first comparator indicates when the main GaN power transistor is in saturation, wherein an output of the second comparator indicates when the drain current of the main GaN power tran-sistor exceeds the predetermined value.
The power electronics device of claim 1, wherein the diode device is a GaN transistor having a drain electrically connected to the drain of the main GaN power transistor, a source electrically connected to the drain of the second GaN current sense transistor, and a gate electrically connected to the drain of the GaN transistor.
The power electronics device of claim 1, wherein the diode device is a pn diode having an anode electrically connected to the drain of the main GaN power transistor and a cathode electrically connected to the drain of the second GaN current sense transistor.
The power electronics device of claim 1, wherein the diode device is in reverse conduction when the main GaN power transistor is on, wherein the diode device enters forward conduction when the main GaN power transistor enters saturation, and wherein current flows into the voltage protection device from the diode device when the diode device enters forward conduction.
The power electronics device of claim 1, wherein the voltage protection device is a GaN transistor having a drain electrically connected to the drain of the second GaN current sense transistor, a source electrically connected to the first current sense terminal of the first semiconductor die, and a gate electrically connected to a gate terminal of the first semiconductor die, wherein the gate terminal of the first semiconductor die also is electrically connected to a gate of the main GaN power transistor and a gate of the first GaN current sense transistor.
The power electronics device of claim 1, wherein the current sense circuit comprises: an operational amplifier having a first input electrically connected to the first current sense terminal of the first semiconductor die and a second input electrically con-nected to the second current sense terminal of the first semiconductor die; and a current source circuit configured to output a current sense signal based on an output of the operational amplifier, wherein a magnitude of the current sense signal is generated to minimize a voltage difference across the first and second current sense terminals of the first semiconductor die.
A sensing method for a GaN (gallium nitride) die that includes a main GaN power transistor, a first GaN current sense transistor having a source electrically connected to a second current sense terminal of the GaN die and a drain electrically connected to a drain of the main GaN power transistor, a second GaN current sense transistor having a source electrically connected to a source of the main GaN power transistor, a diode device electrically connected in series between the drain of the main GaN power transistor and a drain of the second GaN current sense transistor, and a voltage protection device electrically connecting the drain of the second GaN current sense transistor to a first current sense terminal of the GaN Die, the sensing method com-prising: sensing a scaled-down replica of current flowing in the main GaN power transistor based on a voltage at the first current sense terminal of the GaN die and a voltage at the second current sense terminal of the GaN die; detecting when the main GaN power transistor is in saturation based on the voltage at the first current sense terminal of the GaN die and a first reference voltage; and detecting when the drain current of the main GaN power transistor exceeds a predetermined value based on the voltage at the second current sense terminal of the GaN die and a second reference voltage.
The sensing method of claim 13, wherein detecting when the main GaN power transistor is in saturation comprises: inputting the voltage at the first current sense terminal of the GaN die and the first reference voltage to a first comparator on a separate die from the GaN die; and outputting, via the first comparator, an indication of when the main GaN power transistor is in saturation, wherein detecting when the drain current of the main GaN power transistor exceeds the predetermined value com-prises: inputting the voltage at the second current sense ter-minal of the GaN die and the second reference voltage to a second comparator on the die as the first comparator; and outputting, via the second comparator, an indication of when the drain current of the main GaN power transistor exceeds the predetermined value.
Layer stacks claimed or described, ordered top of device to substrate.
GaN power electronics device with dual-die current sensing and short-circuit detection
Materials described outside the worked examples.
GaN (gallium nitride)
GaN
p-GaN gate injection transistor (GIT)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates a schematic diagram of an embodiment of a power electronics device that includes a first semicon- ductor die with a GaN power transistor and …
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Related documents with shared materials, methods, properties, or citations.
Schottky-gate HEMT with p-GaN layer
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