Patent
Atlas literature
Patent
US 12,438,535 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic of a GaN half-bridge motor drive circuit, according to an embodiment of the disclosure; 25
FIG. 2 illustrates a current flow through the GaN half- bridge motor drive circuit of
FIG. 3 shows a current flow through the GaN half-bridge motor drive circuit of
FIG. 4 illustrates steps associated with a method of autonomously controlling a low-side GaN switch in a half- bridge circuit, according to certain …
FIG. 5A illustrates a schematic of an autonomous turn-on circuit for turning on the low-side GaN switch in the half-bridge circuit, according to an embodiment …
FIG. 6 illustrates various signals at different nodes of the circuits of
FIG. 7B illustrates a schematic of a composite switch along with a zero current detection circuit, according to an embodiment of the disclosure. 50
FIG. 40 2 the motor 118 has been replaced by an equivalent motor inductor 218. Control circuit 120 can be arranged to generate control signals to control …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of operating a motor drive circuit, the method comprising: providing a half-bridge circuit including: a high-side gallium nitride (GaN) switch having a first gate terminal, a first drain terminal and a first source terminal; and a low-side GaN switch having a second gate terminal, a second drain terminal and a second source termi-nal, wherein the first drain terminal is coupled to a power supply, the first source terminal is coupled to the second drain terminal at an output node and the second source terminal is coupled to a ground; providing a motor coupled to the output node; turning on the high-side GaN switch such that a first current flows through the motor; turning off the high-side GaN switch; turning on the low-side GaN switch when a voltage between the second drain terminal and the second source terminal drops below a predetermined threshold voltage; sensing, using a sense device coupled to the low-side GaN switch, a magnitude of a second current that flows through the low-side GaN switch; and turning off the low-side GaN switch when the magnitude of the second current drops below a predetermined threshold current.
The method of claim 1, wherein turning on the low-side GaN switch is performed within a predetermined period of time after a control signal that controls a conductivity state of the high-side GaN switch goes high.
The method of claim 1, further comprising turning off the low-side GaN switch prior to turning on the high-side GaN switch if a control signal that controls a conductivity state of the high-side GaN switch goes high after the low-side GaN switch is turned on.
The method of claim 1, wherein the predetermined threshold current has a value that is 10% of a rated current of the low-side GaN switch.
The method of claim 1, wherein the predetermined threshold voltage is a first predetermined threshold voltage, and wherein the method of claim 1 further comprises transmitting an arming signal to the low-side GaN switch when the voltage between the second drain terminal and the second source terminal exceeds a second predetermined threshold voltage, and wherein the arming signal goes low prior to the low-side GaN switch turning on.
The method of claim 1, wherein the half-bridge circuit is a first half-bridge circuit and the output node is a first output node, and wherein the method of claim 1 further comprises a second half-bridge circuit having a second output node, wherein the motor is coupled between the first output node and the second output node.
The method of claim 14, wherein the predetermined threshold voltage is a first predetermined threshold voltage, and wherein the method of claim 1 further comprises transmitting an arming signal to the low-side GaN switch when the voltage between the second drain terminal and the second source terminal exceeds a second predetermined threshold voltage, and wherein the arming signal goes low prior to the low-side GaN switch turning on. 15 16
A circuit comprising: a high-side gallium nitride (GaN) switch having a first gate terminal, a first drain terminal and a first source terminal; a low-side GaN switch having a second gate terminal, a second drain terminal and a second source terminal, wherein the first drain terminal is coupled to a power supply, the first source terminal is coupled to the second drain terminal at an output node and the second source terminal is coupled to a ground; a drive circuit coupled to the high-side GaN switch and to the low-side GaN switch; and a sense device coupled to the low-side GaN switch and arranged to sense a magnitude of a current that flows through the low-side GaN switch; wherein the drive circuit is arranged to: turn on the high-side GaN switch when a control signal that controls a conductivity state of the high-side GaN switch goes high; turning off the high-side GaN switch when the control signal goes low; turn on the low-side GaN switch when a voltage between the second drain terminal and the second source terminal drops below a predetermined thresh-old voltage; and B₂ turn off the low-side GaN switch when the magnitude of the current drops below a predetermined threshold current.
The circuit of claim 8, wherein the drive circuit is further arranged to turn on the low-side GaN switch within a predetermined period of time after the control signal goes high.
The circuit of claim 8, wherein the drive circuit is further arranged to turn off the low-side GaN switch prior to turning on the high-side GaN switch if the control signal goes high after the low-side GaN switch is turned on.
The circuit of claim 8, wherein the predetermined threshold current has a value that is 10% of a rated current of the low-side GaN switch.
The circuit of claim 8, wherein the predetermined threshold voltage is a first predetermined threshold voltage, and wherein the drive circuit is further arranged to transmit an arming signal to the low-side GaN switch when the voltage between the second drain terminal and the second source terminal exceeds a second predetermined threshold voltage, and to set the arming signal to a low state prior to the low-side GaN switch turning on.
The circuit of claim 8, wherein the drive circuit is formed in silicon.
A method of operating a motor drive circuit, the method comprising: providing a half-bridge circuit including: a high-side gallium nitride (GaN) switch having a first gate terminal, a first drain terminal and a first source terminal; and a low-side GaN switch having a second gate terminal, a second drain terminal and a second source termi-nal, wherein the first drain terminal is coupled to a power supply, the first source terminal is coupled to the second drain terminal at an output node and the second source terminal is coupled to a ground; providing a motor coupled to the output node; turning on the high-side GaN switch such that a first current flows through the motor; turning off the high-side GaN switch; turning on the low-side GaN switch when a voltage between the second drain terminal and the second source terminal drops below a predetermined threshold voltage; and turning off the low-side GaN switch when the voltage between the second drain terminal and the second source terminal exceeds the predetermined threshold voltage.
The method of claim 14, wherein turning on the low-side GaN switch is performed within a predetermined period of time after a control signal that controls a conduc-tivity state of the high-side GaN switch goes high.
The method of claim 14, further comprising turning off the low-side GaN switch prior to turning on the high-side GaN switch if a control signal that controls a conductivity state of the high-side GaN switch goes high after the low-side GaN switch is turned on.
The method of claim 14, further comprising providing 5 a drive circuit coupled to the high-side GaN switch and to the low-side GaN switch.
Layer stacks claimed or described, ordered top of device to substrate.
GaN half-bridge motor drive circuit (method embodiment)
GaN half-bridge motor drive circuit (circuit embodiment) with drive circuit and sense device
Materials described outside the worked examples.
gallium nitride
GaN
silicon
Si
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 6
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,438,535 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic of a GaN half-bridge motor drive circuit, according to an embodiment of the disclosure; 25
FIG. 2 illustrates a current flow through the GaN half- bridge motor drive circuit of
FIG. 3 shows a current flow through the GaN half-bridge motor drive circuit of
FIG. 4 illustrates steps associated with a method of autonomously controlling a low-side GaN switch in a half- bridge circuit, according to certain …
FIG. 5A illustrates a schematic of an autonomous turn-on circuit for turning on the low-side GaN switch in the half-bridge circuit, according to an embodiment …
FIG. 6 illustrates various signals at different nodes of the circuits of
FIG. 7B illustrates a schematic of a composite switch along with a zero current detection circuit, according to an embodiment of the disclosure. 50
FIG. 40 2 the motor 118 has been replaced by an equivalent motor inductor 218. Control circuit 120 can be arranged to generate control signals to control …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of operating a motor drive circuit, the method comprising: providing a half-bridge circuit including: a high-side gallium nitride (GaN) switch having a first gate terminal, a first drain terminal and a first source terminal; and a low-side GaN switch having a second gate terminal, a second drain terminal and a second source termi-nal, wherein the first drain terminal is coupled to a power supply, the first source terminal is coupled to the second drain terminal at an output node and the second source terminal is coupled to a ground; providing a motor coupled to the output node; turning on the high-side GaN switch such that a first current flows through the motor; turning off the high-side GaN switch; turning on the low-side GaN switch when a voltage between the second drain terminal and the second source terminal drops below a predetermined threshold voltage; sensing, using a sense device coupled to the low-side GaN switch, a magnitude of a second current that flows through the low-side GaN switch; and turning off the low-side GaN switch when the magnitude of the second current drops below a predetermined threshold current.
The method of claim 1, wherein turning on the low-side GaN switch is performed within a predetermined period of time after a control signal that controls a conductivity state of the high-side GaN switch goes high.
The method of claim 1, further comprising turning off the low-side GaN switch prior to turning on the high-side GaN switch if a control signal that controls a conductivity state of the high-side GaN switch goes high after the low-side GaN switch is turned on.
The method of claim 1, wherein the predetermined threshold current has a value that is 10% of a rated current of the low-side GaN switch.
The method of claim 1, wherein the predetermined threshold voltage is a first predetermined threshold voltage, and wherein the method of claim 1 further comprises transmitting an arming signal to the low-side GaN switch when the voltage between the second drain terminal and the second source terminal exceeds a second predetermined threshold voltage, and wherein the arming signal goes low prior to the low-side GaN switch turning on.
The method of claim 1, wherein the half-bridge circuit is a first half-bridge circuit and the output node is a first output node, and wherein the method of claim 1 further comprises a second half-bridge circuit having a second output node, wherein the motor is coupled between the first output node and the second output node.
The method of claim 14, wherein the predetermined threshold voltage is a first predetermined threshold voltage, and wherein the method of claim 1 further comprises transmitting an arming signal to the low-side GaN switch when the voltage between the second drain terminal and the second source terminal exceeds a second predetermined threshold voltage, and wherein the arming signal goes low prior to the low-side GaN switch turning on. 15 16
A circuit comprising: a high-side gallium nitride (GaN) switch having a first gate terminal, a first drain terminal and a first source terminal; a low-side GaN switch having a second gate terminal, a second drain terminal and a second source terminal, wherein the first drain terminal is coupled to a power supply, the first source terminal is coupled to the second drain terminal at an output node and the second source terminal is coupled to a ground; a drive circuit coupled to the high-side GaN switch and to the low-side GaN switch; and a sense device coupled to the low-side GaN switch and arranged to sense a magnitude of a current that flows through the low-side GaN switch; wherein the drive circuit is arranged to: turn on the high-side GaN switch when a control signal that controls a conductivity state of the high-side GaN switch goes high; turning off the high-side GaN switch when the control signal goes low; turn on the low-side GaN switch when a voltage between the second drain terminal and the second source terminal drops below a predetermined thresh-old voltage; and B₂ turn off the low-side GaN switch when the magnitude of the current drops below a predetermined threshold current.
The circuit of claim 8, wherein the drive circuit is further arranged to turn on the low-side GaN switch within a predetermined period of time after the control signal goes high.
The circuit of claim 8, wherein the drive circuit is further arranged to turn off the low-side GaN switch prior to turning on the high-side GaN switch if the control signal goes high after the low-side GaN switch is turned on.
The circuit of claim 8, wherein the predetermined threshold current has a value that is 10% of a rated current of the low-side GaN switch.
The circuit of claim 8, wherein the predetermined threshold voltage is a first predetermined threshold voltage, and wherein the drive circuit is further arranged to transmit an arming signal to the low-side GaN switch when the voltage between the second drain terminal and the second source terminal exceeds a second predetermined threshold voltage, and to set the arming signal to a low state prior to the low-side GaN switch turning on.
The circuit of claim 8, wherein the drive circuit is formed in silicon.
A method of operating a motor drive circuit, the method comprising: providing a half-bridge circuit including: a high-side gallium nitride (GaN) switch having a first gate terminal, a first drain terminal and a first source terminal; and a low-side GaN switch having a second gate terminal, a second drain terminal and a second source termi-nal, wherein the first drain terminal is coupled to a power supply, the first source terminal is coupled to the second drain terminal at an output node and the second source terminal is coupled to a ground; providing a motor coupled to the output node; turning on the high-side GaN switch such that a first current flows through the motor; turning off the high-side GaN switch; turning on the low-side GaN switch when a voltage between the second drain terminal and the second source terminal drops below a predetermined threshold voltage; and turning off the low-side GaN switch when the voltage between the second drain terminal and the second source terminal exceeds the predetermined threshold voltage.
The method of claim 14, wherein turning on the low-side GaN switch is performed within a predetermined period of time after a control signal that controls a conduc-tivity state of the high-side GaN switch goes high.
The method of claim 14, further comprising turning off the low-side GaN switch prior to turning on the high-side GaN switch if a control signal that controls a conductivity state of the high-side GaN switch goes high after the low-side GaN switch is turned on.
The method of claim 14, further comprising providing 5 a drive circuit coupled to the high-side GaN switch and to the low-side GaN switch.
Layer stacks claimed or described, ordered top of device to substrate.
GaN half-bridge motor drive circuit (method embodiment)
GaN half-bridge motor drive circuit (circuit embodiment) with drive circuit and sense device
Materials described outside the worked examples.
gallium nitride
GaN
silicon
Si
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 6
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,438,535 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic of a GaN half-bridge motor drive circuit, according to an embodiment of the disclosure; 25
FIG. 2 illustrates a current flow through the GaN half- bridge motor drive circuit of
FIG. 3 shows a current flow through the GaN half-bridge motor drive circuit of
FIG. 4 illustrates steps associated with a method of autonomously controlling a low-side GaN switch in a half- bridge circuit, according to certain …
FIG. 5A illustrates a schematic of an autonomous turn-on circuit for turning on the low-side GaN switch in the half-bridge circuit, according to an embodiment …
FIG. 6 illustrates various signals at different nodes of the circuits of
FIG. 7B illustrates a schematic of a composite switch along with a zero current detection circuit, according to an embodiment of the disclosure. 50
FIG. 40 2 the motor 118 has been replaced by an equivalent motor inductor 218. Control circuit 120 can be arranged to generate control signals to control …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of operating a motor drive circuit, the method comprising: providing a half-bridge circuit including: a high-side gallium nitride (GaN) switch having a first gate terminal, a first drain terminal and a first source terminal; and a low-side GaN switch having a second gate terminal, a second drain terminal and a second source termi-nal, wherein the first drain terminal is coupled to a power supply, the first source terminal is coupled to the second drain terminal at an output node and the second source terminal is coupled to a ground; providing a motor coupled to the output node; turning on the high-side GaN switch such that a first current flows through the motor; turning off the high-side GaN switch; turning on the low-side GaN switch when a voltage between the second drain terminal and the second source terminal drops below a predetermined threshold voltage; sensing, using a sense device coupled to the low-side GaN switch, a magnitude of a second current that flows through the low-side GaN switch; and turning off the low-side GaN switch when the magnitude of the second current drops below a predetermined threshold current.
The method of claim 1, wherein turning on the low-side GaN switch is performed within a predetermined period of time after a control signal that controls a conductivity state of the high-side GaN switch goes high.
The method of claim 1, further comprising turning off the low-side GaN switch prior to turning on the high-side GaN switch if a control signal that controls a conductivity state of the high-side GaN switch goes high after the low-side GaN switch is turned on.
The method of claim 1, wherein the predetermined threshold current has a value that is 10% of a rated current of the low-side GaN switch.
The method of claim 1, wherein the predetermined threshold voltage is a first predetermined threshold voltage, and wherein the method of claim 1 further comprises transmitting an arming signal to the low-side GaN switch when the voltage between the second drain terminal and the second source terminal exceeds a second predetermined threshold voltage, and wherein the arming signal goes low prior to the low-side GaN switch turning on.
The method of claim 1, wherein the half-bridge circuit is a first half-bridge circuit and the output node is a first output node, and wherein the method of claim 1 further comprises a second half-bridge circuit having a second output node, wherein the motor is coupled between the first output node and the second output node.
The method of claim 14, wherein the predetermined threshold voltage is a first predetermined threshold voltage, and wherein the method of claim 1 further comprises transmitting an arming signal to the low-side GaN switch when the voltage between the second drain terminal and the second source terminal exceeds a second predetermined threshold voltage, and wherein the arming signal goes low prior to the low-side GaN switch turning on. 15 16
A circuit comprising: a high-side gallium nitride (GaN) switch having a first gate terminal, a first drain terminal and a first source terminal; a low-side GaN switch having a second gate terminal, a second drain terminal and a second source terminal, wherein the first drain terminal is coupled to a power supply, the first source terminal is coupled to the second drain terminal at an output node and the second source terminal is coupled to a ground; a drive circuit coupled to the high-side GaN switch and to the low-side GaN switch; and a sense device coupled to the low-side GaN switch and arranged to sense a magnitude of a current that flows through the low-side GaN switch; wherein the drive circuit is arranged to: turn on the high-side GaN switch when a control signal that controls a conductivity state of the high-side GaN switch goes high; turning off the high-side GaN switch when the control signal goes low; turn on the low-side GaN switch when a voltage between the second drain terminal and the second source terminal drops below a predetermined thresh-old voltage; and B₂ turn off the low-side GaN switch when the magnitude of the current drops below a predetermined threshold current.
The circuit of claim 8, wherein the drive circuit is further arranged to turn on the low-side GaN switch within a predetermined period of time after the control signal goes high.
The circuit of claim 8, wherein the drive circuit is further arranged to turn off the low-side GaN switch prior to turning on the high-side GaN switch if the control signal goes high after the low-side GaN switch is turned on.
The circuit of claim 8, wherein the predetermined threshold current has a value that is 10% of a rated current of the low-side GaN switch.
The circuit of claim 8, wherein the predetermined threshold voltage is a first predetermined threshold voltage, and wherein the drive circuit is further arranged to transmit an arming signal to the low-side GaN switch when the voltage between the second drain terminal and the second source terminal exceeds a second predetermined threshold voltage, and to set the arming signal to a low state prior to the low-side GaN switch turning on.
The circuit of claim 8, wherein the drive circuit is formed in silicon.
A method of operating a motor drive circuit, the method comprising: providing a half-bridge circuit including: a high-side gallium nitride (GaN) switch having a first gate terminal, a first drain terminal and a first source terminal; and a low-side GaN switch having a second gate terminal, a second drain terminal and a second source termi-nal, wherein the first drain terminal is coupled to a power supply, the first source terminal is coupled to the second drain terminal at an output node and the second source terminal is coupled to a ground; providing a motor coupled to the output node; turning on the high-side GaN switch such that a first current flows through the motor; turning off the high-side GaN switch; turning on the low-side GaN switch when a voltage between the second drain terminal and the second source terminal drops below a predetermined threshold voltage; and turning off the low-side GaN switch when the voltage between the second drain terminal and the second source terminal exceeds the predetermined threshold voltage.
The method of claim 14, wherein turning on the low-side GaN switch is performed within a predetermined period of time after a control signal that controls a conduc-tivity state of the high-side GaN switch goes high.
The method of claim 14, further comprising turning off the low-side GaN switch prior to turning on the high-side GaN switch if a control signal that controls a conductivity state of the high-side GaN switch goes high after the low-side GaN switch is turned on.
The method of claim 14, further comprising providing 5 a drive circuit coupled to the high-side GaN switch and to the low-side GaN switch.
Layer stacks claimed or described, ordered top of device to substrate.
GaN half-bridge motor drive circuit (method embodiment)
GaN half-bridge motor drive circuit (circuit embodiment) with drive circuit and sense device
Materials described outside the worked examples.
gallium nitride
GaN
silicon
Si
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 6
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,438,535 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic of a GaN half-bridge motor drive circuit, according to an embodiment of the disclosure; 25
FIG. 2 illustrates a current flow through the GaN half- bridge motor drive circuit of
FIG. 3 shows a current flow through the GaN half-bridge motor drive circuit of
FIG. 4 illustrates steps associated with a method of autonomously controlling a low-side GaN switch in a half- bridge circuit, according to certain …
FIG. 5A illustrates a schematic of an autonomous turn-on circuit for turning on the low-side GaN switch in the half-bridge circuit, according to an embodiment …
FIG. 6 illustrates various signals at different nodes of the circuits of
FIG. 7B illustrates a schematic of a composite switch along with a zero current detection circuit, according to an embodiment of the disclosure. 50
FIG. 40 2 the motor 118 has been replaced by an equivalent motor inductor 218. Control circuit 120 can be arranged to generate control signals to control …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of operating a motor drive circuit, the method comprising: providing a half-bridge circuit including: a high-side gallium nitride (GaN) switch having a first gate terminal, a first drain terminal and a first source terminal; and a low-side GaN switch having a second gate terminal, a second drain terminal and a second source termi-nal, wherein the first drain terminal is coupled to a power supply, the first source terminal is coupled to the second drain terminal at an output node and the second source terminal is coupled to a ground; providing a motor coupled to the output node; turning on the high-side GaN switch such that a first current flows through the motor; turning off the high-side GaN switch; turning on the low-side GaN switch when a voltage between the second drain terminal and the second source terminal drops below a predetermined threshold voltage; sensing, using a sense device coupled to the low-side GaN switch, a magnitude of a second current that flows through the low-side GaN switch; and turning off the low-side GaN switch when the magnitude of the second current drops below a predetermined threshold current.
The method of claim 1, wherein turning on the low-side GaN switch is performed within a predetermined period of time after a control signal that controls a conductivity state of the high-side GaN switch goes high.
The method of claim 1, further comprising turning off the low-side GaN switch prior to turning on the high-side GaN switch if a control signal that controls a conductivity state of the high-side GaN switch goes high after the low-side GaN switch is turned on.
The method of claim 1, wherein the predetermined threshold current has a value that is 10% of a rated current of the low-side GaN switch.
The method of claim 1, wherein the predetermined threshold voltage is a first predetermined threshold voltage, and wherein the method of claim 1 further comprises transmitting an arming signal to the low-side GaN switch when the voltage between the second drain terminal and the second source terminal exceeds a second predetermined threshold voltage, and wherein the arming signal goes low prior to the low-side GaN switch turning on.
The method of claim 1, wherein the half-bridge circuit is a first half-bridge circuit and the output node is a first output node, and wherein the method of claim 1 further comprises a second half-bridge circuit having a second output node, wherein the motor is coupled between the first output node and the second output node.
The method of claim 14, wherein the predetermined threshold voltage is a first predetermined threshold voltage, and wherein the method of claim 1 further comprises transmitting an arming signal to the low-side GaN switch when the voltage between the second drain terminal and the second source terminal exceeds a second predetermined threshold voltage, and wherein the arming signal goes low prior to the low-side GaN switch turning on. 15 16
A circuit comprising: a high-side gallium nitride (GaN) switch having a first gate terminal, a first drain terminal and a first source terminal; a low-side GaN switch having a second gate terminal, a second drain terminal and a second source terminal, wherein the first drain terminal is coupled to a power supply, the first source terminal is coupled to the second drain terminal at an output node and the second source terminal is coupled to a ground; a drive circuit coupled to the high-side GaN switch and to the low-side GaN switch; and a sense device coupled to the low-side GaN switch and arranged to sense a magnitude of a current that flows through the low-side GaN switch; wherein the drive circuit is arranged to: turn on the high-side GaN switch when a control signal that controls a conductivity state of the high-side GaN switch goes high; turning off the high-side GaN switch when the control signal goes low; turn on the low-side GaN switch when a voltage between the second drain terminal and the second source terminal drops below a predetermined thresh-old voltage; and B₂ turn off the low-side GaN switch when the magnitude of the current drops below a predetermined threshold current.
The circuit of claim 8, wherein the drive circuit is further arranged to turn on the low-side GaN switch within a predetermined period of time after the control signal goes high.
The circuit of claim 8, wherein the drive circuit is further arranged to turn off the low-side GaN switch prior to turning on the high-side GaN switch if the control signal goes high after the low-side GaN switch is turned on.
The circuit of claim 8, wherein the predetermined threshold current has a value that is 10% of a rated current of the low-side GaN switch.
The circuit of claim 8, wherein the predetermined threshold voltage is a first predetermined threshold voltage, and wherein the drive circuit is further arranged to transmit an arming signal to the low-side GaN switch when the voltage between the second drain terminal and the second source terminal exceeds a second predetermined threshold voltage, and to set the arming signal to a low state prior to the low-side GaN switch turning on.
The circuit of claim 8, wherein the drive circuit is formed in silicon.
A method of operating a motor drive circuit, the method comprising: providing a half-bridge circuit including: a high-side gallium nitride (GaN) switch having a first gate terminal, a first drain terminal and a first source terminal; and a low-side GaN switch having a second gate terminal, a second drain terminal and a second source termi-nal, wherein the first drain terminal is coupled to a power supply, the first source terminal is coupled to the second drain terminal at an output node and the second source terminal is coupled to a ground; providing a motor coupled to the output node; turning on the high-side GaN switch such that a first current flows through the motor; turning off the high-side GaN switch; turning on the low-side GaN switch when a voltage between the second drain terminal and the second source terminal drops below a predetermined threshold voltage; and turning off the low-side GaN switch when the voltage between the second drain terminal and the second source terminal exceeds the predetermined threshold voltage.
The method of claim 14, wherein turning on the low-side GaN switch is performed within a predetermined period of time after a control signal that controls a conduc-tivity state of the high-side GaN switch goes high.
The method of claim 14, further comprising turning off the low-side GaN switch prior to turning on the high-side GaN switch if a control signal that controls a conductivity state of the high-side GaN switch goes high after the low-side GaN switch is turned on.
The method of claim 14, further comprising providing 5 a drive circuit coupled to the high-side GaN switch and to the low-side GaN switch.
Layer stacks claimed or described, ordered top of device to substrate.
GaN half-bridge motor drive circuit (method embodiment)
GaN half-bridge motor drive circuit (circuit embodiment) with drive circuit and sense device
Materials described outside the worked examples.
gallium nitride
GaN
silicon
Si
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 6
Related documents with shared materials, methods, properties, or citations.
