Patent
US 10,707,373POLYCRYSTALLINE GALLIUM NITRIDE SELF-SUPPORTED SUBSTRATE AND LIGHT EMITTING ELEMENT USING SAME
Morimichi WATANABE
US
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Patent
Atlas literature
Patent
US 10,707,373Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A self-supporting polycrystalline gallium nitride substrate composed of a plurality of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate, wherein the self-supporting polycrystalline gallium nitride substrate has a top surface and a bottom surface and the crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis performed on the top surface are distributed at various tilt angles from the specific crystal orientation, the average tilt angle thereof being 0.1 0 or more and less than 10 and the cross-sectional average diameter D T being 10 pm o r mo re at the outermo st surface of the gallium nitride-based single crystal grains exposed on the top surface.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein tilt angles of the gallium nitride-based single crystal grains have a Gaussian distribution.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a single crystal structure in the direction approximately normal to the substrate.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains exposed on the top surface connect to the bottom surface without intervention of grain boundaries.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the cross-sectional average diameter D T at the outermost surface of gallium nitride-based single crystal grains exposed on the top surface is different from the cross-sectional average diameter D B at the o utermo st s urface of the gallium nitride-ba sed single crystal grains exposed on the bottom surface.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein a ratio D T/D B, which is the ratio of the cross-sectional average diameter D r at the outermost surface of gallium nitride-based single crystal grains exposed on the top surface to the cross-sectional average diameter D B at the outermo st s urfa ce o f the gallium nitride-based single crystal grains exposed on the bottom surface, is greater than 1.0.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a thickness of 20 pm or more.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a diameter of 50.8 mm or more.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are doped with an n-type dopant or a p-type dopant.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are free from a dopant.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains comprise mixed crystals.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains constituting the self-supporting polycrystalline gallium nitride substrate are crystallographically non-oriented in a direction parallel to a plate surface, which is perpendicular to the direction normal to the substrate.
A light emitting device comprising: the self-supporting polycrystalline gallium nitride substrate according to claim 1; and a light emitting functional layer disposed on the substrate, wherein the light emitting functional layer has at least one layer composed of a plurality of semiconductor single crystal grains, wherein the at least one layer has a single crystal structure in a direction approximately normal to the substrate.
Layer stacks claimed or described, ordered top of device to substrate.
self-supporting polycrystalline gallium nitride substrate
light emitting device
Materials described outside the worked examples.
gallium nitride-based single crystal grains (polycrystalline GaN substrate)
GaN
semiconductor single crystal grains (light emitting functional layer)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–15 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,707,373Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A self-supporting polycrystalline gallium nitride substrate composed of a plurality of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate, wherein the self-supporting polycrystalline gallium nitride substrate has a top surface and a bottom surface and the crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis performed on the top surface are distributed at various tilt angles from the specific crystal orientation, the average tilt angle thereof being 0.1 0 or more and less than 10 and the cross-sectional average diameter D T being 10 pm o r mo re at the outermo st surface of the gallium nitride-based single crystal grains exposed on the top surface.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein tilt angles of the gallium nitride-based single crystal grains have a Gaussian distribution.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a single crystal structure in the direction approximately normal to the substrate.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains exposed on the top surface connect to the bottom surface without intervention of grain boundaries.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the cross-sectional average diameter D T at the outermost surface of gallium nitride-based single crystal grains exposed on the top surface is different from the cross-sectional average diameter D B at the o utermo st s urface of the gallium nitride-ba sed single crystal grains exposed on the bottom surface.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein a ratio D T/D B, which is the ratio of the cross-sectional average diameter D r at the outermost surface of gallium nitride-based single crystal grains exposed on the top surface to the cross-sectional average diameter D B at the outermo st s urfa ce o f the gallium nitride-based single crystal grains exposed on the bottom surface, is greater than 1.0.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a thickness of 20 pm or more.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a diameter of 50.8 mm or more.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are doped with an n-type dopant or a p-type dopant.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are free from a dopant.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains comprise mixed crystals.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains constituting the self-supporting polycrystalline gallium nitride substrate are crystallographically non-oriented in a direction parallel to a plate surface, which is perpendicular to the direction normal to the substrate.
A light emitting device comprising: the self-supporting polycrystalline gallium nitride substrate according to claim 1; and a light emitting functional layer disposed on the substrate, wherein the light emitting functional layer has at least one layer composed of a plurality of semiconductor single crystal grains, wherein the at least one layer has a single crystal structure in a direction approximately normal to the substrate.
Layer stacks claimed or described, ordered top of device to substrate.
self-supporting polycrystalline gallium nitride substrate
light emitting device
Materials described outside the worked examples.
gallium nitride-based single crystal grains (polycrystalline GaN substrate)
GaN
semiconductor single crystal grains (light emitting functional layer)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–15 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,707,373Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A self-supporting polycrystalline gallium nitride substrate composed of a plurality of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate, wherein the self-supporting polycrystalline gallium nitride substrate has a top surface and a bottom surface and the crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis performed on the top surface are distributed at various tilt angles from the specific crystal orientation, the average tilt angle thereof being 0.1 0 or more and less than 10 and the cross-sectional average diameter D T being 10 pm o r mo re at the outermo st surface of the gallium nitride-based single crystal grains exposed on the top surface.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein tilt angles of the gallium nitride-based single crystal grains have a Gaussian distribution.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a single crystal structure in the direction approximately normal to the substrate.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains exposed on the top surface connect to the bottom surface without intervention of grain boundaries.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the cross-sectional average diameter D T at the outermost surface of gallium nitride-based single crystal grains exposed on the top surface is different from the cross-sectional average diameter D B at the o utermo st s urface of the gallium nitride-ba sed single crystal grains exposed on the bottom surface.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein a ratio D T/D B, which is the ratio of the cross-sectional average diameter D r at the outermost surface of gallium nitride-based single crystal grains exposed on the top surface to the cross-sectional average diameter D B at the outermo st s urfa ce o f the gallium nitride-based single crystal grains exposed on the bottom surface, is greater than 1.0.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a thickness of 20 pm or more.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a diameter of 50.8 mm or more.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are doped with an n-type dopant or a p-type dopant.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are free from a dopant.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains comprise mixed crystals.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains constituting the self-supporting polycrystalline gallium nitride substrate are crystallographically non-oriented in a direction parallel to a plate surface, which is perpendicular to the direction normal to the substrate.
A light emitting device comprising: the self-supporting polycrystalline gallium nitride substrate according to claim 1; and a light emitting functional layer disposed on the substrate, wherein the light emitting functional layer has at least one layer composed of a plurality of semiconductor single crystal grains, wherein the at least one layer has a single crystal structure in a direction approximately normal to the substrate.
Layer stacks claimed or described, ordered top of device to substrate.
self-supporting polycrystalline gallium nitride substrate
light emitting device
Materials described outside the worked examples.
gallium nitride-based single crystal grains (polycrystalline GaN substrate)
GaN
semiconductor single crystal grains (light emitting functional layer)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–15 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,707,373Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A self-supporting polycrystalline gallium nitride substrate composed of a plurality of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate, wherein the self-supporting polycrystalline gallium nitride substrate has a top surface and a bottom surface and the crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis performed on the top surface are distributed at various tilt angles from the specific crystal orientation, the average tilt angle thereof being 0.1 0 or more and less than 10 and the cross-sectional average diameter D T being 10 pm o r mo re at the outermo st surface of the gallium nitride-based single crystal grains exposed on the top surface.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein tilt angles of the gallium nitride-based single crystal grains have a Gaussian distribution.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a single crystal structure in the direction approximately normal to the substrate.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains exposed on the top surface connect to the bottom surface without intervention of grain boundaries.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the cross-sectional average diameter D T at the outermost surface of gallium nitride-based single crystal grains exposed on the top surface is different from the cross-sectional average diameter D B at the o utermo st s urface of the gallium nitride-ba sed single crystal grains exposed on the bottom surface.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein a ratio D T/D B, which is the ratio of the cross-sectional average diameter D r at the outermost surface of gallium nitride-based single crystal grains exposed on the top surface to the cross-sectional average diameter D B at the outermo st s urfa ce o f the gallium nitride-based single crystal grains exposed on the bottom surface, is greater than 1.0.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a thickness of 20 pm or more.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a diameter of 50.8 mm or more.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are doped with an n-type dopant or a p-type dopant.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are free from a dopant.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains comprise mixed crystals.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains constituting the self-supporting polycrystalline gallium nitride substrate are crystallographically non-oriented in a direction parallel to a plate surface, which is perpendicular to the direction normal to the substrate.
A light emitting device comprising: the self-supporting polycrystalline gallium nitride substrate according to claim 1; and a light emitting functional layer disposed on the substrate, wherein the light emitting functional layer has at least one layer composed of a plurality of semiconductor single crystal grains, wherein the at least one layer has a single crystal structure in a direction approximately normal to the substrate.
Layer stacks claimed or described, ordered top of device to substrate.
self-supporting polycrystalline gallium nitride substrate
light emitting device
Materials described outside the worked examples.
gallium nitride-based single crystal grains (polycrystalline GaN substrate)
GaN
semiconductor single crystal grains (light emitting functional layer)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–15 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
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