Patent
US 10,749,065Light-responsive LED based on GaN/CsPbBr I 3-x heterojunction, and preparation
Hao Wang
US
Copyright © 2026 Matter42. All rights reserved.
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-3. Canceled
Canceled
A preparation method for a light-responsive LED based on a GaN/CsPbBr XI 3-x heteroj unction, comprising steps of: (1) selecting a GaN base layer and washing, particularly comprising steps of: selecting a GaN base layer on a sapphire substrate, and ultrasonically cleaning; then processing with ultraviolet and ozone, and obtaining a preprocessed GaN base layer; (2) preparing an indium bottom electrode, particularly comprising steps of: coating molten indium uniformly on one side of the preprocessed GaN base layer obtained through the step (1); cooling to a room temperature, and obtaining the indium bottom electrode; (3) generating an all-inorganic perovskite CsPbBr I 3-x polycrystalline film with an anti-solvent, particularly comprising steps of: according to a proportion, successively dissolving all-inorganic perovskite CsPbBr 3 powders and CsPb I 3 powders in DMSO (dimethylsulfoxide); after standing for 1-3 hours, filtering by a filter, and obtaining a colorless transparent solution; thereafter, dropping a small amount of the colorless transparent solution uniformly on the other side of the GaN base layer; placing the GaN base layer on a spin coater, and running for 40-80 seconds with a rotation speed of 3000-5000 rpm, wherein the anti-solvent is dropped on the GaN base layer after running for 15-30 seconds; placing an obtained sample in an inert atmosphere, and annealing at 80-120 ° C for 5-15 minutes; and obtaining the all-inorganic perovskite CsPbBr I 3 -x polycrystalline fi lm; (4) preparing a carbon top electrode, particularly comprising steps of: with using a mask, blade-coating carbon paste on the CsPbBr XI 3-x polycrystalline fi lm obtained through the step (3); placing the sample in an argon atmosphere, and annealing, so as to remove solvent in the carbon paste; and (5) testing, particularly comprising steps of after fi nishing testing, obtaining a complete LED device, wherein: the obtained LED consists of the GaN base la y er on the sapphire substrate, the all-inorganic perovskite CsPbBr I 3 pol ycry stalline fi lm, the indium bottom electrode and the carbon top electrode, formin g an In/GaN/CsPbBr fIx/C structure; in the CsPbBr IN pol ycry stalline film, 0<x<3, the all-inorganic perovskite CsPbBr t. pol ycry stalline fi lm and the indium bottom electrode are arranged on the GaN base la y er in parallel; and the carbon top electrode is arranged on the all-inorganic perovskite CsPbBr ±. polvcrv stalline fi lm. Currently amended
The preparation method, as recited in claim 4, wherein: in the step (3), a weight ratio of the CsPbBr 3 powders to the CsPb I 3 powders is 1:0, 1:1, 1:3, or 0:1. Original
The preparation method, as recited in claim 4, wherein: in the step (3), the anti-solvent is ethyl ether, ethyl acetate, or methylbenzene. Original
The preparation method, as recited in claim 4, wherein: in the step (3), the all-inorganic perovskite CsPbBr 3 powders are prepared through steps of: dissolving PbBr 2 in an appropriate amount of HBr, heating and stirring until fully dissolved, and obtaining a solution A; dissolving CsBr in an appropriate amount of deionized water, heating and stirring until fully dissolved, and obtaining a solution B; rapidly adding the solution B into the solution A, stirring until completely reacted, and obtaining yellow powdery precipitates; washing the precipitates with methyl alcohol or ethyl alcohol; after suction filtration, annealing obtained powders in an inert atmosphere at 60-80 ° C for 20-40 minutes, so as to remove the residual methyl alcohol or ethyl alcohol, and obtaining the all-inorganic perovskite CsPbBr 3 powders. Original
Claims 9-10. Canceled
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Synthesis of all-inorganic perovskite CsPbBr₃ powders by dissolving PbBr₂ in HBr (solution A) and CsBr in deionized water (solution B), mixing to precipitate, washing with alcohol, suction filtering, and annealing in inert atmosphere at 60-80°C for 20-40 min. XRD patterns shown in Fig. 1.
3 materials1 process step
Synthesis of all-inorganic perovskite CsPbBr₃ polycrystalline films on GaN base layer using anti-solvents of different types and dosages. SEM surface micrographs shown in Fig. 2.
4 materials1 process step
Preparation of light-responsive LED based on GaN/CsPbBr₃ heterojunction (x=3, pure bromide). Device structure: In/GaN/CsPbBr₃/C. I-V curves under dark and illumination (Fig. 4), I-T curves with periodic on/off illumination (Fig. 5), electroluminescent I-V curve (Fig. 6), electroluminescent spectrum (Fig. 7), and CIE chromaticity coordinates (Fig. 8) reported.
4 materials1 process step
Preparation of light-responsive LED based on GaN/CsPbBr1.5I1.5 heterojunction. I-V curves shown in Fig. 9(b). Electroluminescent spectrum in Fig. 12.
4 materials1 process step
Preparation of light-responsive LED based on GaN/CsPbBr0.75I2.25 heterojunction. I-V curves shown in Fig. 9(c). Electroluminescent spectrum in Fig. 12.
4 materials1 process step
Preparation of light-responsive LED based on GaN/CsPbI₃ heterojunction (x=0, pure iodide). I-V curves shown in Fig. 9(d). Electroluminescent spectrum in Fig. 12.
Layer stacks claimed or described, ordered top of device to substrate.
light-responsive LED based on GaN/CsPbBrxI₃-x heterojunction
Materials described outside the worked examples.
all-inorganic perovskite CsPbBrxI₃-x polycrystalline film
CsPbBrxI₃-x
DMSO (dimethylsulfoxide)
C₂H₆OS
sapphire substrate
Al₂O₃
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical detection wavelength range | 350–550 nm | CsPbBrxI₃-x |
electroluminescence color under forward bias (pure green) | — | CsPbBr₃ |
XRD patterns of CsPbBr3 powders shown in Fig. 1 | — | CsPbBr₃ |
Thickness | ≤ 1 nm | — |
Duration | 1–3 hours | — |
Duration | 40–80 seconds | — |
Duration | 15–30 seconds | — |
Temperature | 80–120 °C | — |
Duration | 5–15 minutes | — |
Temperature | 60–80 °C | — |
Duration | 20–40 minutes | — |
Thickness | 100–300 nm | — |
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Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-3. Canceled
Canceled
A preparation method for a light-responsive LED based on a GaN/CsPbBr XI 3-x heteroj unction, comprising steps of: (1) selecting a GaN base layer and washing, particularly comprising steps of: selecting a GaN base layer on a sapphire substrate, and ultrasonically cleaning; then processing with ultraviolet and ozone, and obtaining a preprocessed GaN base layer; (2) preparing an indium bottom electrode, particularly comprising steps of: coating molten indium uniformly on one side of the preprocessed GaN base layer obtained through the step (1); cooling to a room temperature, and obtaining the indium bottom electrode; (3) generating an all-inorganic perovskite CsPbBr I 3-x polycrystalline film with an anti-solvent, particularly comprising steps of: according to a proportion, successively dissolving all-inorganic perovskite CsPbBr 3 powders and CsPb I 3 powders in DMSO (dimethylsulfoxide); after standing for 1-3 hours, filtering by a filter, and obtaining a colorless transparent solution; thereafter, dropping a small amount of the colorless transparent solution uniformly on the other side of the GaN base layer; placing the GaN base layer on a spin coater, and running for 40-80 seconds with a rotation speed of 3000-5000 rpm, wherein the anti-solvent is dropped on the GaN base layer after running for 15-30 seconds; placing an obtained sample in an inert atmosphere, and annealing at 80-120 ° C for 5-15 minutes; and obtaining the all-inorganic perovskite CsPbBr I 3 -x polycrystalline fi lm; (4) preparing a carbon top electrode, particularly comprising steps of: with using a mask, blade-coating carbon paste on the CsPbBr XI 3-x polycrystalline fi lm obtained through the step (3); placing the sample in an argon atmosphere, and annealing, so as to remove solvent in the carbon paste; and (5) testing, particularly comprising steps of after fi nishing testing, obtaining a complete LED device, wherein: the obtained LED consists of the GaN base la y er on the sapphire substrate, the all-inorganic perovskite CsPbBr I 3 pol ycry stalline fi lm, the indium bottom electrode and the carbon top electrode, formin g an In/GaN/CsPbBr fIx/C structure; in the CsPbBr IN pol ycry stalline film, 0<x<3, the all-inorganic perovskite CsPbBr t. pol ycry stalline fi lm and the indium bottom electrode are arranged on the GaN base la y er in parallel; and the carbon top electrode is arranged on the all-inorganic perovskite CsPbBr ±. polvcrv stalline fi lm. Currently amended
The preparation method, as recited in claim 4, wherein: in the step (3), a weight ratio of the CsPbBr 3 powders to the CsPb I 3 powders is 1:0, 1:1, 1:3, or 0:1. Original
The preparation method, as recited in claim 4, wherein: in the step (3), the anti-solvent is ethyl ether, ethyl acetate, or methylbenzene. Original
The preparation method, as recited in claim 4, wherein: in the step (3), the all-inorganic perovskite CsPbBr 3 powders are prepared through steps of: dissolving PbBr 2 in an appropriate amount of HBr, heating and stirring until fully dissolved, and obtaining a solution A; dissolving CsBr in an appropriate amount of deionized water, heating and stirring until fully dissolved, and obtaining a solution B; rapidly adding the solution B into the solution A, stirring until completely reacted, and obtaining yellow powdery precipitates; washing the precipitates with methyl alcohol or ethyl alcohol; after suction filtration, annealing obtained powders in an inert atmosphere at 60-80 ° C for 20-40 minutes, so as to remove the residual methyl alcohol or ethyl alcohol, and obtaining the all-inorganic perovskite CsPbBr 3 powders. Original
Claims 9-10. Canceled
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Synthesis of all-inorganic perovskite CsPbBr₃ powders by dissolving PbBr₂ in HBr (solution A) and CsBr in deionized water (solution B), mixing to precipitate, washing with alcohol, suction filtering, and annealing in inert atmosphere at 60-80°C for 20-40 min. XRD patterns shown in Fig. 1.
3 materials1 process step
Synthesis of all-inorganic perovskite CsPbBr₃ polycrystalline films on GaN base layer using anti-solvents of different types and dosages. SEM surface micrographs shown in Fig. 2.
4 materials1 process step
Preparation of light-responsive LED based on GaN/CsPbBr₃ heterojunction (x=3, pure bromide). Device structure: In/GaN/CsPbBr₃/C. I-V curves under dark and illumination (Fig. 4), I-T curves with periodic on/off illumination (Fig. 5), electroluminescent I-V curve (Fig. 6), electroluminescent spectrum (Fig. 7), and CIE chromaticity coordinates (Fig. 8) reported.
4 materials1 process step
Preparation of light-responsive LED based on GaN/CsPbBr1.5I1.5 heterojunction. I-V curves shown in Fig. 9(b). Electroluminescent spectrum in Fig. 12.
4 materials1 process step
Preparation of light-responsive LED based on GaN/CsPbBr0.75I2.25 heterojunction. I-V curves shown in Fig. 9(c). Electroluminescent spectrum in Fig. 12.
4 materials1 process step
Preparation of light-responsive LED based on GaN/CsPbI₃ heterojunction (x=0, pure iodide). I-V curves shown in Fig. 9(d). Electroluminescent spectrum in Fig. 12.
Layer stacks claimed or described, ordered top of device to substrate.
light-responsive LED based on GaN/CsPbBrxI₃-x heterojunction
Materials described outside the worked examples.
all-inorganic perovskite CsPbBrxI₃-x polycrystalline film
CsPbBrxI₃-x
DMSO (dimethylsulfoxide)
C₂H₆OS
sapphire substrate
Al₂O₃
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical detection wavelength range | 350–550 nm | CsPbBrxI₃-x |
electroluminescence color under forward bias (pure green) | — | CsPbBr₃ |
XRD patterns of CsPbBr3 powders shown in Fig. 1 | — | CsPbBr₃ |
Thickness | ≤ 1 nm | — |
Duration | 1–3 hours | — |
Duration | 40–80 seconds | — |
Duration | 15–30 seconds | — |
Temperature | 80–120 °C | — |
Duration | 5–15 minutes | — |
Temperature | 60–80 °C | — |
Duration | 20–40 minutes | — |
Thickness | 100–300 nm | — |
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GALLIUM NITRIDE BASED LIGHT EMITTING DIODE
GaN-based Light Emitting Diode with Current Spreading Structure
PATTERNED SUBSTRATE FOR GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND THE LIGHT EMITTING DIODE USING THE SAME
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Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-3. Canceled
Canceled
A preparation method for a light-responsive LED based on a GaN/CsPbBr XI 3-x heteroj unction, comprising steps of: (1) selecting a GaN base layer and washing, particularly comprising steps of: selecting a GaN base layer on a sapphire substrate, and ultrasonically cleaning; then processing with ultraviolet and ozone, and obtaining a preprocessed GaN base layer; (2) preparing an indium bottom electrode, particularly comprising steps of: coating molten indium uniformly on one side of the preprocessed GaN base layer obtained through the step (1); cooling to a room temperature, and obtaining the indium bottom electrode; (3) generating an all-inorganic perovskite CsPbBr I 3-x polycrystalline film with an anti-solvent, particularly comprising steps of: according to a proportion, successively dissolving all-inorganic perovskite CsPbBr 3 powders and CsPb I 3 powders in DMSO (dimethylsulfoxide); after standing for 1-3 hours, filtering by a filter, and obtaining a colorless transparent solution; thereafter, dropping a small amount of the colorless transparent solution uniformly on the other side of the GaN base layer; placing the GaN base layer on a spin coater, and running for 40-80 seconds with a rotation speed of 3000-5000 rpm, wherein the anti-solvent is dropped on the GaN base layer after running for 15-30 seconds; placing an obtained sample in an inert atmosphere, and annealing at 80-120 ° C for 5-15 minutes; and obtaining the all-inorganic perovskite CsPbBr I 3 -x polycrystalline fi lm; (4) preparing a carbon top electrode, particularly comprising steps of: with using a mask, blade-coating carbon paste on the CsPbBr XI 3-x polycrystalline fi lm obtained through the step (3); placing the sample in an argon atmosphere, and annealing, so as to remove solvent in the carbon paste; and (5) testing, particularly comprising steps of after fi nishing testing, obtaining a complete LED device, wherein: the obtained LED consists of the GaN base la y er on the sapphire substrate, the all-inorganic perovskite CsPbBr I 3 pol ycry stalline fi lm, the indium bottom electrode and the carbon top electrode, formin g an In/GaN/CsPbBr fIx/C structure; in the CsPbBr IN pol ycry stalline film, 0<x<3, the all-inorganic perovskite CsPbBr t. pol ycry stalline fi lm and the indium bottom electrode are arranged on the GaN base la y er in parallel; and the carbon top electrode is arranged on the all-inorganic perovskite CsPbBr ±. polvcrv stalline fi lm. Currently amended
The preparation method, as recited in claim 4, wherein: in the step (3), a weight ratio of the CsPbBr 3 powders to the CsPb I 3 powders is 1:0, 1:1, 1:3, or 0:1. Original
The preparation method, as recited in claim 4, wherein: in the step (3), the anti-solvent is ethyl ether, ethyl acetate, or methylbenzene. Original
The preparation method, as recited in claim 4, wherein: in the step (3), the all-inorganic perovskite CsPbBr 3 powders are prepared through steps of: dissolving PbBr 2 in an appropriate amount of HBr, heating and stirring until fully dissolved, and obtaining a solution A; dissolving CsBr in an appropriate amount of deionized water, heating and stirring until fully dissolved, and obtaining a solution B; rapidly adding the solution B into the solution A, stirring until completely reacted, and obtaining yellow powdery precipitates; washing the precipitates with methyl alcohol or ethyl alcohol; after suction filtration, annealing obtained powders in an inert atmosphere at 60-80 ° C for 20-40 minutes, so as to remove the residual methyl alcohol or ethyl alcohol, and obtaining the all-inorganic perovskite CsPbBr 3 powders. Original
Claims 9-10. Canceled
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Synthesis of all-inorganic perovskite CsPbBr₃ powders by dissolving PbBr₂ in HBr (solution A) and CsBr in deionized water (solution B), mixing to precipitate, washing with alcohol, suction filtering, and annealing in inert atmosphere at 60-80°C for 20-40 min. XRD patterns shown in Fig. 1.
3 materials1 process step
Synthesis of all-inorganic perovskite CsPbBr₃ polycrystalline films on GaN base layer using anti-solvents of different types and dosages. SEM surface micrographs shown in Fig. 2.
4 materials1 process step
Preparation of light-responsive LED based on GaN/CsPbBr₃ heterojunction (x=3, pure bromide). Device structure: In/GaN/CsPbBr₃/C. I-V curves under dark and illumination (Fig. 4), I-T curves with periodic on/off illumination (Fig. 5), electroluminescent I-V curve (Fig. 6), electroluminescent spectrum (Fig. 7), and CIE chromaticity coordinates (Fig. 8) reported.
4 materials1 process step
Preparation of light-responsive LED based on GaN/CsPbBr1.5I1.5 heterojunction. I-V curves shown in Fig. 9(b). Electroluminescent spectrum in Fig. 12.
4 materials1 process step
Preparation of light-responsive LED based on GaN/CsPbBr0.75I2.25 heterojunction. I-V curves shown in Fig. 9(c). Electroluminescent spectrum in Fig. 12.
4 materials1 process step
Preparation of light-responsive LED based on GaN/CsPbI₃ heterojunction (x=0, pure iodide). I-V curves shown in Fig. 9(d). Electroluminescent spectrum in Fig. 12.
Layer stacks claimed or described, ordered top of device to substrate.
light-responsive LED based on GaN/CsPbBrxI₃-x heterojunction
Materials described outside the worked examples.
all-inorganic perovskite CsPbBrxI₃-x polycrystalline film
CsPbBrxI₃-x
DMSO (dimethylsulfoxide)
C₂H₆OS
sapphire substrate
Al₂O₃
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical detection wavelength range | 350–550 nm | CsPbBrxI₃-x |
electroluminescence color under forward bias (pure green) | — | CsPbBr₃ |
XRD patterns of CsPbBr3 powders shown in Fig. 1 | — | CsPbBr₃ |
Thickness | ≤ 1 nm | — |
Duration | 1–3 hours | — |
Duration | 40–80 seconds | — |
Duration | 15–30 seconds | — |
Temperature | 80–120 °C | — |
Duration | 5–15 minutes | — |
Temperature | 60–80 °C | — |
Duration | 20–40 minutes | — |
Thickness | 100–300 nm | — |
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FLIP-CHIP GAN LED FABRICATION METHOD
GAN LIGHT EMITTING DIODE AND METHOD FOR INCREASING LIGHT EXTRACTION ON GAN LIGHT EMITTING DIODE VIA SAPPHIRE SHAPING
GALLIUM NITRIDE BASED LIGHT EMITTING DIODE
GaN-based Light Emitting Diode with Current Spreading Structure
PATTERNED SUBSTRATE FOR GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND THE LIGHT EMITTING DIODE USING THE SAME
LIGHT EMITTING DIODE HAVING N-FACE GAN WITH ROUGHENED SURFACE
SEMICONDUCTOR SUBSTRATE, GALLIUM NITRIDE SINGLE CRYSTAL, AND METHOD FOR PRODUCING GALLIUM NITRIDE SINGLE CRYSTAL
POLYCRYSTALLINE GALLIUM NITRIDE SELF-SUPPORTED SUBSTRATE AND LIGHT EMITTING ELEMENT USING SAME
FLEXIBLE GAN LIGHT-EMITTING DIODES
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POLYCRYSTALLINE GALLIUM-NITRIDE SELF-SUPPORTING SUBSTRATE AND LIGHT-EMITTING ELEMENT USING SAME
TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-3. Canceled
Canceled
A preparation method for a light-responsive LED based on a GaN/CsPbBr XI 3-x heteroj unction, comprising steps of: (1) selecting a GaN base layer and washing, particularly comprising steps of: selecting a GaN base layer on a sapphire substrate, and ultrasonically cleaning; then processing with ultraviolet and ozone, and obtaining a preprocessed GaN base layer; (2) preparing an indium bottom electrode, particularly comprising steps of: coating molten indium uniformly on one side of the preprocessed GaN base layer obtained through the step (1); cooling to a room temperature, and obtaining the indium bottom electrode; (3) generating an all-inorganic perovskite CsPbBr I 3-x polycrystalline film with an anti-solvent, particularly comprising steps of: according to a proportion, successively dissolving all-inorganic perovskite CsPbBr 3 powders and CsPb I 3 powders in DMSO (dimethylsulfoxide); after standing for 1-3 hours, filtering by a filter, and obtaining a colorless transparent solution; thereafter, dropping a small amount of the colorless transparent solution uniformly on the other side of the GaN base layer; placing the GaN base layer on a spin coater, and running for 40-80 seconds with a rotation speed of 3000-5000 rpm, wherein the anti-solvent is dropped on the GaN base layer after running for 15-30 seconds; placing an obtained sample in an inert atmosphere, and annealing at 80-120 ° C for 5-15 minutes; and obtaining the all-inorganic perovskite CsPbBr I 3 -x polycrystalline fi lm; (4) preparing a carbon top electrode, particularly comprising steps of: with using a mask, blade-coating carbon paste on the CsPbBr XI 3-x polycrystalline fi lm obtained through the step (3); placing the sample in an argon atmosphere, and annealing, so as to remove solvent in the carbon paste; and (5) testing, particularly comprising steps of after fi nishing testing, obtaining a complete LED device, wherein: the obtained LED consists of the GaN base la y er on the sapphire substrate, the all-inorganic perovskite CsPbBr I 3 pol ycry stalline fi lm, the indium bottom electrode and the carbon top electrode, formin g an In/GaN/CsPbBr fIx/C structure; in the CsPbBr IN pol ycry stalline film, 0<x<3, the all-inorganic perovskite CsPbBr t. pol ycry stalline fi lm and the indium bottom electrode are arranged on the GaN base la y er in parallel; and the carbon top electrode is arranged on the all-inorganic perovskite CsPbBr ±. polvcrv stalline fi lm. Currently amended
The preparation method, as recited in claim 4, wherein: in the step (3), a weight ratio of the CsPbBr 3 powders to the CsPb I 3 powders is 1:0, 1:1, 1:3, or 0:1. Original
The preparation method, as recited in claim 4, wherein: in the step (3), the anti-solvent is ethyl ether, ethyl acetate, or methylbenzene. Original
The preparation method, as recited in claim 4, wherein: in the step (3), the all-inorganic perovskite CsPbBr 3 powders are prepared through steps of: dissolving PbBr 2 in an appropriate amount of HBr, heating and stirring until fully dissolved, and obtaining a solution A; dissolving CsBr in an appropriate amount of deionized water, heating and stirring until fully dissolved, and obtaining a solution B; rapidly adding the solution B into the solution A, stirring until completely reacted, and obtaining yellow powdery precipitates; washing the precipitates with methyl alcohol or ethyl alcohol; after suction filtration, annealing obtained powders in an inert atmosphere at 60-80 ° C for 20-40 minutes, so as to remove the residual methyl alcohol or ethyl alcohol, and obtaining the all-inorganic perovskite CsPbBr 3 powders. Original
Claims 9-10. Canceled
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Synthesis of all-inorganic perovskite CsPbBr₃ powders by dissolving PbBr₂ in HBr (solution A) and CsBr in deionized water (solution B), mixing to precipitate, washing with alcohol, suction filtering, and annealing in inert atmosphere at 60-80°C for 20-40 min. XRD patterns shown in Fig. 1.
3 materials1 process step
Synthesis of all-inorganic perovskite CsPbBr₃ polycrystalline films on GaN base layer using anti-solvents of different types and dosages. SEM surface micrographs shown in Fig. 2.
4 materials1 process step
Preparation of light-responsive LED based on GaN/CsPbBr₃ heterojunction (x=3, pure bromide). Device structure: In/GaN/CsPbBr₃/C. I-V curves under dark and illumination (Fig. 4), I-T curves with periodic on/off illumination (Fig. 5), electroluminescent I-V curve (Fig. 6), electroluminescent spectrum (Fig. 7), and CIE chromaticity coordinates (Fig. 8) reported.
4 materials1 process step
Preparation of light-responsive LED based on GaN/CsPbBr1.5I1.5 heterojunction. I-V curves shown in Fig. 9(b). Electroluminescent spectrum in Fig. 12.
4 materials1 process step
Preparation of light-responsive LED based on GaN/CsPbBr0.75I2.25 heterojunction. I-V curves shown in Fig. 9(c). Electroluminescent spectrum in Fig. 12.
4 materials1 process step
Preparation of light-responsive LED based on GaN/CsPbI₃ heterojunction (x=0, pure iodide). I-V curves shown in Fig. 9(d). Electroluminescent spectrum in Fig. 12.
Layer stacks claimed or described, ordered top of device to substrate.
light-responsive LED based on GaN/CsPbBrxI₃-x heterojunction
Materials described outside the worked examples.
all-inorganic perovskite CsPbBrxI₃-x polycrystalline film
CsPbBrxI₃-x
DMSO (dimethylsulfoxide)
C₂H₆OS
sapphire substrate
Al₂O₃
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical detection wavelength range | 350–550 nm | CsPbBrxI₃-x |
electroluminescence color under forward bias (pure green) | — | CsPbBr₃ |
XRD patterns of CsPbBr3 powders shown in Fig. 1 | — | CsPbBr₃ |
Thickness | ≤ 1 nm | — |
Duration | 1–3 hours | — |
Duration | 40–80 seconds | — |
Duration | 15–30 seconds | — |
Temperature | 80–120 °C | — |
Duration | 5–15 minutes | — |
Temperature | 60–80 °C | — |
Duration | 20–40 minutes | — |
Thickness | 100–300 nm | — |
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GALLIUM NITRIDE BASED LIGHT EMITTING DIODE
GaN-based Light Emitting Diode with Current Spreading Structure
PATTERNED SUBSTRATE FOR GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND THE LIGHT EMITTING DIODE USING THE SAME
LIGHT EMITTING DIODE HAVING N-FACE GAN WITH ROUGHENED SURFACE
SEMICONDUCTOR SUBSTRATE, GALLIUM NITRIDE SINGLE CRYSTAL, AND METHOD FOR PRODUCING GALLIUM NITRIDE SINGLE CRYSTAL
POLYCRYSTALLINE GALLIUM NITRIDE SELF-SUPPORTED SUBSTRATE AND LIGHT EMITTING ELEMENT USING SAME
FLEXIBLE GAN LIGHT-EMITTING DIODES
LIGHT EMITTING DEVICE INCLUDING A PLURALITY OF GAN-BASED REFLECTIVE LAYERS
POLYCRYSTALLINE GALLIUM-NITRIDE SELF-SUPPORTING SUBSTRATE AND LIGHT-EMITTING ELEMENT USING SAME
TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE