Patent
US 9,362,454GALLIUM NITRIDE BASED LIGHT EMITTING DIODE
Seong Jae KIM
US
Copyright © 2026 Matter42. All rights reserved.
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Patent
US 9,362,454Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-7. canceled
A light emitting diode comprising: an un-doped GaN layer having a thickness of 1 pm ~ 3 pm; a first conductive type semiconductor layer on the un-doped GaN layer; at least one In x Gai.-, N layer (0<x<0.2) on the first conductive type semiconductor layer; at least one GaN layer having a thickness of 10 A-30 A directly on the at least one InK GadN SVG 14555979.12-23-2015.IIZYEF₁IPXXIFW4.CLM.1.10.491.1020.1357.1068.svg 0.16 2.887 Chemistry Black and white an active layer directly on the at least one GaN layer; a second conductive type semiconductor layer on the active layer; and a transparent I-TO(Indium-Tin-Oxide) ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer; wherein the active layer comprises a well layer including an InGaN and a barrier layer including a GaN, wherein a thickness of the barrier layer is greater than a thickness of the well layer, and wherein a thickness of the at least one In x Gai- N layer (0<x<0.2) is less than a thickness of the second conductive type semiconductor layer having 750A ~ 1500 A.
The light emitting diode according to claim 8, wherein the active layer comprises a multiquantum well structure including at least one dopant in at least one of the well layer or the barrier layer.
The light emitting diode according to claim 8, wherein light generated at the active layer is emitted via the transparent ITO (Indium-Tin-Oxide) layer to an external.
The light emitting diode according to claim 8, wherein the at least one In x Gai.-, N layer (0<x<0.2) is directly disposed on the first conductive type semiconductor layer.
The light emitting diode according to claim 8, wherein an Indium composition of the at least one In x Gai X N layer (0<x<0.2) is lower than an Indium composition of the active layer. BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/CJM/smt SVG 14555979.12-23-2015.IIZYEF₁IPXXIFW4.CLM.2.1.176.124.191.135.svg 0.037 0.05 Chemistry Black and white Application No.: 14/555,979 Docket No.: 3449-0577PUS₈ Reply to Office Action of Page 4 of 7
The light emitting diode according to claim 8, wherein the at least one InxGai.x N layer (0<x<0.2) has a thickness less than 200A.
The light emitting diode according to claim 8, further comprising a sapphire substrate under the un-doped GaN layer.
The light emitting diode according to claim 8, wherein at least one period of the active layer comprises at least three layers including the InGaN and the GaN.
The light emitting diode according to claim 8, wherein the second conductive type semiconductor layer has a thickness of 750A ~ 1 500A.
The light emitting diode according to claim 8, wherein a thickness of the at least one In x Gai. x N layer (0<x<0.2) is less than a thickness of the second conductive type semiconductor layer.
A light emitting diode comprising: an un-doped GaN layer; a first conductive type semiconductor layer on the un-doped GaN layer; at least one In xGai X N layer (0<x<0.2) on the first conductive type semiconductor layer; at least one GaN layer directly on the at least one-In.Ga'iN Iayer(0<x<0.2) I 1 GraN la y er (0<x<0.2); an active layer directly on the at least one GaN layer; a second conductive type semiconductor layer on the active layer; and a transparent ITO(Indium-Tin-Oxide) ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer, wherein the second conductive type semiconductor layer has a thickness of 750 A 1500A.
The light emitting diode according to claim 14, wherein a thickness of the at least one GaN layer is 10 A ~ 30 A.
The light emitting diode according to claim 14, wherein the undoped GaN layer having a thickness of 1 pm-3 pm.
The light emitting diode according to claim 14, wherein a thickness of the at least one In x Gai.-, N layer (0<x<0.2) is less than a thickness of the second conductive type semiconductor layer.
The light emitting diode according to claim 14, wherein the at least one InxGai.x N layer (0<x<0.2) has a thickness less than 200A.
The light emitting diode according to claim 14, wherein the at least one SVG 14555979.12-23-2015.IIZYEF₁IPXXIFW4.CLM.2.27.275.2908.471.2950.svg 0.14 0.653 Chemistry Black and white layer (0<x<0.2) is directly disposed on the first conductive type semiconductor layer. BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/C JM/smt Application No.: 14/555,979 Docket No.: 3449-0577PUS₈ Reply to Office Action of Page 5 of 7
The light emitting diode according to claim 14, wherein an Indium composition of the at least one In x Gai. x N layer (0 <x<0.2) is lower than an Indium composition of the active layer.
The light emitting diode according to claim 14, further comprising a substrate under the un-doped GaN layer
The light emitting diode according to claim comprises at least three layers including an InGaN
The light emitting diode according to claim quantum well structure including at least one least one ba rri er. BIRCH, STEWART, KOLASCH 14, wherein at least one period of the active layer an a GaN. 14, wherein the active layer comprises a multidopant in at least one of at least one well layer or at & BIRCH, LLP JTE/CJM/smt
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED (claim 8)
Materials described outside the worked examples.
un-doped GaN
GaN
InxGa₁-xN (0<x<0.2)
InxGa₁-xN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,362,454Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-7. canceled
A light emitting diode comprising: an un-doped GaN layer having a thickness of 1 pm ~ 3 pm; a first conductive type semiconductor layer on the un-doped GaN layer; at least one In x Gai.-, N layer (0<x<0.2) on the first conductive type semiconductor layer; at least one GaN layer having a thickness of 10 A-30 A directly on the at least one InK GadN SVG 14555979.12-23-2015.IIZYEF₁IPXXIFW4.CLM.1.10.491.1020.1357.1068.svg 0.16 2.887 Chemistry Black and white an active layer directly on the at least one GaN layer; a second conductive type semiconductor layer on the active layer; and a transparent I-TO(Indium-Tin-Oxide) ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer; wherein the active layer comprises a well layer including an InGaN and a barrier layer including a GaN, wherein a thickness of the barrier layer is greater than a thickness of the well layer, and wherein a thickness of the at least one In x Gai- N layer (0<x<0.2) is less than a thickness of the second conductive type semiconductor layer having 750A ~ 1500 A.
The light emitting diode according to claim 8, wherein the active layer comprises a multiquantum well structure including at least one dopant in at least one of the well layer or the barrier layer.
The light emitting diode according to claim 8, wherein light generated at the active layer is emitted via the transparent ITO (Indium-Tin-Oxide) layer to an external.
The light emitting diode according to claim 8, wherein the at least one In x Gai.-, N layer (0<x<0.2) is directly disposed on the first conductive type semiconductor layer.
The light emitting diode according to claim 8, wherein an Indium composition of the at least one In x Gai X N layer (0<x<0.2) is lower than an Indium composition of the active layer. BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/CJM/smt SVG 14555979.12-23-2015.IIZYEF₁IPXXIFW4.CLM.2.1.176.124.191.135.svg 0.037 0.05 Chemistry Black and white Application No.: 14/555,979 Docket No.: 3449-0577PUS₈ Reply to Office Action of Page 4 of 7
The light emitting diode according to claim 8, wherein the at least one InxGai.x N layer (0<x<0.2) has a thickness less than 200A.
The light emitting diode according to claim 8, further comprising a sapphire substrate under the un-doped GaN layer.
The light emitting diode according to claim 8, wherein at least one period of the active layer comprises at least three layers including the InGaN and the GaN.
The light emitting diode according to claim 8, wherein the second conductive type semiconductor layer has a thickness of 750A ~ 1 500A.
The light emitting diode according to claim 8, wherein a thickness of the at least one In x Gai. x N layer (0<x<0.2) is less than a thickness of the second conductive type semiconductor layer.
A light emitting diode comprising: an un-doped GaN layer; a first conductive type semiconductor layer on the un-doped GaN layer; at least one In xGai X N layer (0<x<0.2) on the first conductive type semiconductor layer; at least one GaN layer directly on the at least one-In.Ga'iN Iayer(0<x<0.2) I 1 GraN la y er (0<x<0.2); an active layer directly on the at least one GaN layer; a second conductive type semiconductor layer on the active layer; and a transparent ITO(Indium-Tin-Oxide) ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer, wherein the second conductive type semiconductor layer has a thickness of 750 A 1500A.
The light emitting diode according to claim 14, wherein a thickness of the at least one GaN layer is 10 A ~ 30 A.
The light emitting diode according to claim 14, wherein the undoped GaN layer having a thickness of 1 pm-3 pm.
The light emitting diode according to claim 14, wherein a thickness of the at least one In x Gai.-, N layer (0<x<0.2) is less than a thickness of the second conductive type semiconductor layer.
The light emitting diode according to claim 14, wherein the at least one InxGai.x N layer (0<x<0.2) has a thickness less than 200A.
The light emitting diode according to claim 14, wherein the at least one SVG 14555979.12-23-2015.IIZYEF₁IPXXIFW4.CLM.2.27.275.2908.471.2950.svg 0.14 0.653 Chemistry Black and white layer (0<x<0.2) is directly disposed on the first conductive type semiconductor layer. BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/C JM/smt Application No.: 14/555,979 Docket No.: 3449-0577PUS₈ Reply to Office Action of Page 5 of 7
The light emitting diode according to claim 14, wherein an Indium composition of the at least one In x Gai. x N layer (0 <x<0.2) is lower than an Indium composition of the active layer.
The light emitting diode according to claim 14, further comprising a substrate under the un-doped GaN layer
The light emitting diode according to claim comprises at least three layers including an InGaN
The light emitting diode according to claim quantum well structure including at least one least one ba rri er. BIRCH, STEWART, KOLASCH 14, wherein at least one period of the active layer an a GaN. 14, wherein the active layer comprises a multidopant in at least one of at least one well layer or at & BIRCH, LLP JTE/CJM/smt
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED (claim 8)
Materials described outside the worked examples.
un-doped GaN
GaN
InxGa₁-xN (0<x<0.2)
InxGa₁-xN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,362,454Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-7. canceled
A light emitting diode comprising: an un-doped GaN layer having a thickness of 1 pm ~ 3 pm; a first conductive type semiconductor layer on the un-doped GaN layer; at least one In x Gai.-, N layer (0<x<0.2) on the first conductive type semiconductor layer; at least one GaN layer having a thickness of 10 A-30 A directly on the at least one InK GadN SVG 14555979.12-23-2015.IIZYEF₁IPXXIFW4.CLM.1.10.491.1020.1357.1068.svg 0.16 2.887 Chemistry Black and white an active layer directly on the at least one GaN layer; a second conductive type semiconductor layer on the active layer; and a transparent I-TO(Indium-Tin-Oxide) ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer; wherein the active layer comprises a well layer including an InGaN and a barrier layer including a GaN, wherein a thickness of the barrier layer is greater than a thickness of the well layer, and wherein a thickness of the at least one In x Gai- N layer (0<x<0.2) is less than a thickness of the second conductive type semiconductor layer having 750A ~ 1500 A.
The light emitting diode according to claim 8, wherein the active layer comprises a multiquantum well structure including at least one dopant in at least one of the well layer or the barrier layer.
The light emitting diode according to claim 8, wherein light generated at the active layer is emitted via the transparent ITO (Indium-Tin-Oxide) layer to an external.
The light emitting diode according to claim 8, wherein the at least one In x Gai.-, N layer (0<x<0.2) is directly disposed on the first conductive type semiconductor layer.
The light emitting diode according to claim 8, wherein an Indium composition of the at least one In x Gai X N layer (0<x<0.2) is lower than an Indium composition of the active layer. BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/CJM/smt SVG 14555979.12-23-2015.IIZYEF₁IPXXIFW4.CLM.2.1.176.124.191.135.svg 0.037 0.05 Chemistry Black and white Application No.: 14/555,979 Docket No.: 3449-0577PUS₈ Reply to Office Action of Page 4 of 7
The light emitting diode according to claim 8, wherein the at least one InxGai.x N layer (0<x<0.2) has a thickness less than 200A.
The light emitting diode according to claim 8, further comprising a sapphire substrate under the un-doped GaN layer.
The light emitting diode according to claim 8, wherein at least one period of the active layer comprises at least three layers including the InGaN and the GaN.
The light emitting diode according to claim 8, wherein the second conductive type semiconductor layer has a thickness of 750A ~ 1 500A.
The light emitting diode according to claim 8, wherein a thickness of the at least one In x Gai. x N layer (0<x<0.2) is less than a thickness of the second conductive type semiconductor layer.
A light emitting diode comprising: an un-doped GaN layer; a first conductive type semiconductor layer on the un-doped GaN layer; at least one In xGai X N layer (0<x<0.2) on the first conductive type semiconductor layer; at least one GaN layer directly on the at least one-In.Ga'iN Iayer(0<x<0.2) I 1 GraN la y er (0<x<0.2); an active layer directly on the at least one GaN layer; a second conductive type semiconductor layer on the active layer; and a transparent ITO(Indium-Tin-Oxide) ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer, wherein the second conductive type semiconductor layer has a thickness of 750 A 1500A.
The light emitting diode according to claim 14, wherein a thickness of the at least one GaN layer is 10 A ~ 30 A.
The light emitting diode according to claim 14, wherein the undoped GaN layer having a thickness of 1 pm-3 pm.
The light emitting diode according to claim 14, wherein a thickness of the at least one In x Gai.-, N layer (0<x<0.2) is less than a thickness of the second conductive type semiconductor layer.
The light emitting diode according to claim 14, wherein the at least one InxGai.x N layer (0<x<0.2) has a thickness less than 200A.
The light emitting diode according to claim 14, wherein the at least one SVG 14555979.12-23-2015.IIZYEF₁IPXXIFW4.CLM.2.27.275.2908.471.2950.svg 0.14 0.653 Chemistry Black and white layer (0<x<0.2) is directly disposed on the first conductive type semiconductor layer. BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/C JM/smt Application No.: 14/555,979 Docket No.: 3449-0577PUS₈ Reply to Office Action of Page 5 of 7
The light emitting diode according to claim 14, wherein an Indium composition of the at least one In x Gai. x N layer (0 <x<0.2) is lower than an Indium composition of the active layer.
The light emitting diode according to claim 14, further comprising a substrate under the un-doped GaN layer
The light emitting diode according to claim comprises at least three layers including an InGaN
The light emitting diode according to claim quantum well structure including at least one least one ba rri er. BIRCH, STEWART, KOLASCH 14, wherein at least one period of the active layer an a GaN. 14, wherein the active layer comprises a multidopant in at least one of at least one well layer or at & BIRCH, LLP JTE/CJM/smt
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED (claim 8)
Materials described outside the worked examples.
un-doped GaN
GaN
InxGa₁-xN (0<x<0.2)
InxGa₁-xN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,362,454Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-7. canceled
A light emitting diode comprising: an un-doped GaN layer having a thickness of 1 pm ~ 3 pm; a first conductive type semiconductor layer on the un-doped GaN layer; at least one In x Gai.-, N layer (0<x<0.2) on the first conductive type semiconductor layer; at least one GaN layer having a thickness of 10 A-30 A directly on the at least one InK GadN SVG 14555979.12-23-2015.IIZYEF₁IPXXIFW4.CLM.1.10.491.1020.1357.1068.svg 0.16 2.887 Chemistry Black and white an active layer directly on the at least one GaN layer; a second conductive type semiconductor layer on the active layer; and a transparent I-TO(Indium-Tin-Oxide) ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer; wherein the active layer comprises a well layer including an InGaN and a barrier layer including a GaN, wherein a thickness of the barrier layer is greater than a thickness of the well layer, and wherein a thickness of the at least one In x Gai- N layer (0<x<0.2) is less than a thickness of the second conductive type semiconductor layer having 750A ~ 1500 A.
The light emitting diode according to claim 8, wherein the active layer comprises a multiquantum well structure including at least one dopant in at least one of the well layer or the barrier layer.
The light emitting diode according to claim 8, wherein light generated at the active layer is emitted via the transparent ITO (Indium-Tin-Oxide) layer to an external.
The light emitting diode according to claim 8, wherein the at least one In x Gai.-, N layer (0<x<0.2) is directly disposed on the first conductive type semiconductor layer.
The light emitting diode according to claim 8, wherein an Indium composition of the at least one In x Gai X N layer (0<x<0.2) is lower than an Indium composition of the active layer. BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/CJM/smt SVG 14555979.12-23-2015.IIZYEF₁IPXXIFW4.CLM.2.1.176.124.191.135.svg 0.037 0.05 Chemistry Black and white Application No.: 14/555,979 Docket No.: 3449-0577PUS₈ Reply to Office Action of Page 4 of 7
The light emitting diode according to claim 8, wherein the at least one InxGai.x N layer (0<x<0.2) has a thickness less than 200A.
The light emitting diode according to claim 8, further comprising a sapphire substrate under the un-doped GaN layer.
The light emitting diode according to claim 8, wherein at least one period of the active layer comprises at least three layers including the InGaN and the GaN.
The light emitting diode according to claim 8, wherein the second conductive type semiconductor layer has a thickness of 750A ~ 1 500A.
The light emitting diode according to claim 8, wherein a thickness of the at least one In x Gai. x N layer (0<x<0.2) is less than a thickness of the second conductive type semiconductor layer.
A light emitting diode comprising: an un-doped GaN layer; a first conductive type semiconductor layer on the un-doped GaN layer; at least one In xGai X N layer (0<x<0.2) on the first conductive type semiconductor layer; at least one GaN layer directly on the at least one-In.Ga'iN Iayer(0<x<0.2) I 1 GraN la y er (0<x<0.2); an active layer directly on the at least one GaN layer; a second conductive type semiconductor layer on the active layer; and a transparent ITO(Indium-Tin-Oxide) ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer, wherein the second conductive type semiconductor layer has a thickness of 750 A 1500A.
The light emitting diode according to claim 14, wherein a thickness of the at least one GaN layer is 10 A ~ 30 A.
The light emitting diode according to claim 14, wherein the undoped GaN layer having a thickness of 1 pm-3 pm.
The light emitting diode according to claim 14, wherein a thickness of the at least one In x Gai.-, N layer (0<x<0.2) is less than a thickness of the second conductive type semiconductor layer.
The light emitting diode according to claim 14, wherein the at least one InxGai.x N layer (0<x<0.2) has a thickness less than 200A.
The light emitting diode according to claim 14, wherein the at least one SVG 14555979.12-23-2015.IIZYEF₁IPXXIFW4.CLM.2.27.275.2908.471.2950.svg 0.14 0.653 Chemistry Black and white layer (0<x<0.2) is directly disposed on the first conductive type semiconductor layer. BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/C JM/smt Application No.: 14/555,979 Docket No.: 3449-0577PUS₈ Reply to Office Action of Page 5 of 7
The light emitting diode according to claim 14, wherein an Indium composition of the at least one In x Gai. x N layer (0 <x<0.2) is lower than an Indium composition of the active layer.
The light emitting diode according to claim 14, further comprising a substrate under the un-doped GaN layer
The light emitting diode according to claim comprises at least three layers including an InGaN
The light emitting diode according to claim quantum well structure including at least one least one ba rri er. BIRCH, STEWART, KOLASCH 14, wherein at least one period of the active layer an a GaN. 14, wherein the active layer comprises a multidopant in at least one of at least one well layer or at & BIRCH, LLP JTE/CJM/smt
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED (claim 8)
Materials described outside the worked examples.
un-doped GaN
GaN
InxGa₁-xN (0<x<0.2)
InxGa₁-xN
Related documents with shared materials, methods, properties, or citations.
GaN-based LED (claim 14)
InGaN/GaN active layer (MQW)
ITO (Indium-Tin-Oxide)
sapphire substrate
Al₂O₃
GaN-based LED (claim 14)
InGaN/GaN active layer (MQW)
ITO (Indium-Tin-Oxide)
sapphire substrate
Al₂O₃
GaN-based LED (claim 14)
InGaN/GaN active layer (MQW)
ITO (Indium-Tin-Oxide)
sapphire substrate
Al₂O₃
GaN-based LED (claim 14)
InGaN/GaN active layer (MQW)
ITO (Indium-Tin-Oxide)
sapphire substrate
Al₂O₃