Patent
US 8,217,488GaN light emitting diode and method for increasing light extraction on GaN light emitting diode via sapphire shaping
Shiue-Lung CHEN
US
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Patent
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US 8,217,488Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. A method for increasing light extraction on GaN light emitting diode via sapphire shaping, comprising the steps o f: a) providing a GaN light emitting diode having a sapphire substrate which includes a patterned top surface and a bottom surface opposite to the patterned top surface; b) machining the sapphire substrate by cutting off a portion from each end of bottom of the sapphire substrate to form a slope or by creating a plurality of depressions on the bottom surface of the sapphire substrate; and c) enveloping a lower portion of the sapphire substrate in a reflector for reflecting light from the sapphire substrate, thereby enhancing light extraction efficiency of the GaN light emitting diode.
The method according to claim 1, wherein the reflector comprises silver, aluminum, or a distributed Bragg reflector (DBR).
The method according to claim 1, further comprising a step d) of encompassing the reflector with a reflective adhesive.
The method according to claim 1, wherein the cut-off portion has a height larger than 5 0pm.
The method according to claim 1, wherein the slope has an inclination angle greater than 45 0 with respect to the bottom surface.
The method according to claim 1, wherein step b) is performed by laser cutting, d r y etching, photolithography, or inductively coupled plasma etching.
The method according to claim 1, wherein the depression has a depth 11 larger than 50pm.
A GaN light emitting diode, comprising: a GaN light emitting diode having a sapphire substrate which includes a patterned top surface and a bottom surface opposite to the patterned top surface, the sapphire substrate having a slope on each end of bottom of the sapphire substrate or a plurality of depressions on the bottom surface of the sapphire substrate; and a reflector enveloping a lower portion of the sapphire substrate for reflecting light from the sapphire substrate, thereby enhancing light extraction efficiency of the GaN light emitting diode.
The GaN light emitting diode according to claim 9, wherein the reflector comprises silver, aluminum, or a distributed Bragg reflector (DBR).
The GaN light emitting diode according to claim 9, further comprising a reflective adhesive encompassing the reflector.
The GaN light emitting diode according to claim 9, wherein the slope has an inclination angle greater than 45 0 with respect to the bottom surface.
The GaN light emitting diode according to claim 9, wherein the slope and the depressions are formed by laser cutting, d r y etching, photolithography, or inductively coupled plasma etching.
The GaN light emitting diode according to claim 9, wherein the depression has a depth larger than 50pm.
Embodiments described in the patent, grouped by the materials and process steps they use.
9 materials1 process step
A GaN LED with sapphire substrate is provided. Laser cutting (or dry etching, photolithography, or ICP etching) is used to cut off a portion from each end of the bottom of the sapphire substrate to form two slopes, each with height D > 50 µm and inclination angle > 45°. A reflector made of silver, aluminum, or DBR is then formed enveloping the lower portion of the sapphire substrate, and encompassed with a reflective adhesive (silver or aluminum-containing glue) to further enhance light extraction efficiency. Laser cutting can also be used to dice substrates containing multiple LEDs, forming V-shaped grooves.
Layer stacks claimed or described, ordered top of device to substrate.
GaN light emitting diode with shaped sapphire substrate and reflector
Materials described outside the worked examples.
reflector
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,217,488Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. A method for increasing light extraction on GaN light emitting diode via sapphire shaping, comprising the steps o f: a) providing a GaN light emitting diode having a sapphire substrate which includes a patterned top surface and a bottom surface opposite to the patterned top surface; b) machining the sapphire substrate by cutting off a portion from each end of bottom of the sapphire substrate to form a slope or by creating a plurality of depressions on the bottom surface of the sapphire substrate; and c) enveloping a lower portion of the sapphire substrate in a reflector for reflecting light from the sapphire substrate, thereby enhancing light extraction efficiency of the GaN light emitting diode.
The method according to claim 1, wherein the reflector comprises silver, aluminum, or a distributed Bragg reflector (DBR).
The method according to claim 1, further comprising a step d) of encompassing the reflector with a reflective adhesive.
The method according to claim 1, wherein the cut-off portion has a height larger than 5 0pm.
The method according to claim 1, wherein the slope has an inclination angle greater than 45 0 with respect to the bottom surface.
The method according to claim 1, wherein step b) is performed by laser cutting, d r y etching, photolithography, or inductively coupled plasma etching.
The method according to claim 1, wherein the depression has a depth 11 larger than 50pm.
A GaN light emitting diode, comprising: a GaN light emitting diode having a sapphire substrate which includes a patterned top surface and a bottom surface opposite to the patterned top surface, the sapphire substrate having a slope on each end of bottom of the sapphire substrate or a plurality of depressions on the bottom surface of the sapphire substrate; and a reflector enveloping a lower portion of the sapphire substrate for reflecting light from the sapphire substrate, thereby enhancing light extraction efficiency of the GaN light emitting diode.
The GaN light emitting diode according to claim 9, wherein the reflector comprises silver, aluminum, or a distributed Bragg reflector (DBR).
The GaN light emitting diode according to claim 9, further comprising a reflective adhesive encompassing the reflector.
The GaN light emitting diode according to claim 9, wherein the slope has an inclination angle greater than 45 0 with respect to the bottom surface.
The GaN light emitting diode according to claim 9, wherein the slope and the depressions are formed by laser cutting, d r y etching, photolithography, or inductively coupled plasma etching.
The GaN light emitting diode according to claim 9, wherein the depression has a depth larger than 50pm.
Embodiments described in the patent, grouped by the materials and process steps they use.
9 materials1 process step
A GaN LED with sapphire substrate is provided. Laser cutting (or dry etching, photolithography, or ICP etching) is used to cut off a portion from each end of the bottom of the sapphire substrate to form two slopes, each with height D > 50 µm and inclination angle > 45°. A reflector made of silver, aluminum, or DBR is then formed enveloping the lower portion of the sapphire substrate, and encompassed with a reflective adhesive (silver or aluminum-containing glue) to further enhance light extraction efficiency. Laser cutting can also be used to dice substrates containing multiple LEDs, forming V-shaped grooves.
Layer stacks claimed or described, ordered top of device to substrate.
GaN light emitting diode with shaped sapphire substrate and reflector
Materials described outside the worked examples.
reflector
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,217,488Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. A method for increasing light extraction on GaN light emitting diode via sapphire shaping, comprising the steps o f: a) providing a GaN light emitting diode having a sapphire substrate which includes a patterned top surface and a bottom surface opposite to the patterned top surface; b) machining the sapphire substrate by cutting off a portion from each end of bottom of the sapphire substrate to form a slope or by creating a plurality of depressions on the bottom surface of the sapphire substrate; and c) enveloping a lower portion of the sapphire substrate in a reflector for reflecting light from the sapphire substrate, thereby enhancing light extraction efficiency of the GaN light emitting diode.
The method according to claim 1, wherein the reflector comprises silver, aluminum, or a distributed Bragg reflector (DBR).
The method according to claim 1, further comprising a step d) of encompassing the reflector with a reflective adhesive.
The method according to claim 1, wherein the cut-off portion has a height larger than 5 0pm.
The method according to claim 1, wherein the slope has an inclination angle greater than 45 0 with respect to the bottom surface.
The method according to claim 1, wherein step b) is performed by laser cutting, d r y etching, photolithography, or inductively coupled plasma etching.
The method according to claim 1, wherein the depression has a depth 11 larger than 50pm.
A GaN light emitting diode, comprising: a GaN light emitting diode having a sapphire substrate which includes a patterned top surface and a bottom surface opposite to the patterned top surface, the sapphire substrate having a slope on each end of bottom of the sapphire substrate or a plurality of depressions on the bottom surface of the sapphire substrate; and a reflector enveloping a lower portion of the sapphire substrate for reflecting light from the sapphire substrate, thereby enhancing light extraction efficiency of the GaN light emitting diode.
The GaN light emitting diode according to claim 9, wherein the reflector comprises silver, aluminum, or a distributed Bragg reflector (DBR).
The GaN light emitting diode according to claim 9, further comprising a reflective adhesive encompassing the reflector.
The GaN light emitting diode according to claim 9, wherein the slope has an inclination angle greater than 45 0 with respect to the bottom surface.
The GaN light emitting diode according to claim 9, wherein the slope and the depressions are formed by laser cutting, d r y etching, photolithography, or inductively coupled plasma etching.
The GaN light emitting diode according to claim 9, wherein the depression has a depth larger than 50pm.
Embodiments described in the patent, grouped by the materials and process steps they use.
9 materials1 process step
A GaN LED with sapphire substrate is provided. Laser cutting (or dry etching, photolithography, or ICP etching) is used to cut off a portion from each end of the bottom of the sapphire substrate to form two slopes, each with height D > 50 µm and inclination angle > 45°. A reflector made of silver, aluminum, or DBR is then formed enveloping the lower portion of the sapphire substrate, and encompassed with a reflective adhesive (silver or aluminum-containing glue) to further enhance light extraction efficiency. Laser cutting can also be used to dice substrates containing multiple LEDs, forming V-shaped grooves.
Layer stacks claimed or described, ordered top of device to substrate.
GaN light emitting diode with shaped sapphire substrate and reflector
Materials described outside the worked examples.
reflector
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,217,488Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. A method for increasing light extraction on GaN light emitting diode via sapphire shaping, comprising the steps o f: a) providing a GaN light emitting diode having a sapphire substrate which includes a patterned top surface and a bottom surface opposite to the patterned top surface; b) machining the sapphire substrate by cutting off a portion from each end of bottom of the sapphire substrate to form a slope or by creating a plurality of depressions on the bottom surface of the sapphire substrate; and c) enveloping a lower portion of the sapphire substrate in a reflector for reflecting light from the sapphire substrate, thereby enhancing light extraction efficiency of the GaN light emitting diode.
The method according to claim 1, wherein the reflector comprises silver, aluminum, or a distributed Bragg reflector (DBR).
The method according to claim 1, further comprising a step d) of encompassing the reflector with a reflective adhesive.
The method according to claim 1, wherein the cut-off portion has a height larger than 5 0pm.
The method according to claim 1, wherein the slope has an inclination angle greater than 45 0 with respect to the bottom surface.
The method according to claim 1, wherein step b) is performed by laser cutting, d r y etching, photolithography, or inductively coupled plasma etching.
The method according to claim 1, wherein the depression has a depth 11 larger than 50pm.
A GaN light emitting diode, comprising: a GaN light emitting diode having a sapphire substrate which includes a patterned top surface and a bottom surface opposite to the patterned top surface, the sapphire substrate having a slope on each end of bottom of the sapphire substrate or a plurality of depressions on the bottom surface of the sapphire substrate; and a reflector enveloping a lower portion of the sapphire substrate for reflecting light from the sapphire substrate, thereby enhancing light extraction efficiency of the GaN light emitting diode.
The GaN light emitting diode according to claim 9, wherein the reflector comprises silver, aluminum, or a distributed Bragg reflector (DBR).
The GaN light emitting diode according to claim 9, further comprising a reflective adhesive encompassing the reflector.
The GaN light emitting diode according to claim 9, wherein the slope has an inclination angle greater than 45 0 with respect to the bottom surface.
The GaN light emitting diode according to claim 9, wherein the slope and the depressions are formed by laser cutting, d r y etching, photolithography, or inductively coupled plasma etching.
The GaN light emitting diode according to claim 9, wherein the depression has a depth larger than 50pm.
Embodiments described in the patent, grouped by the materials and process steps they use.
9 materials1 process step
A GaN LED with sapphire substrate is provided. Laser cutting (or dry etching, photolithography, or ICP etching) is used to cut off a portion from each end of the bottom of the sapphire substrate to form two slopes, each with height D > 50 µm and inclination angle > 45°. A reflector made of silver, aluminum, or DBR is then formed enveloping the lower portion of the sapphire substrate, and encompassed with a reflective adhesive (silver or aluminum-containing glue) to further enhance light extraction efficiency. Laser cutting can also be used to dice substrates containing multiple LEDs, forming V-shaped grooves.
Layer stacks claimed or described, ordered top of device to substrate.
GaN light emitting diode with shaped sapphire substrate and reflector
Materials described outside the worked examples.
reflector
Related documents with shared materials, methods, properties, or citations.