Patent
US 9,899,569PATTERNED SUBSTRATE FOR GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND THE LIGHT EMITTING DIODE USING THE SAME
Si Hyun Park
US
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US 9,899,569Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 shows a various kinds of patterned shapes in the patterned substrate according to an embodiment of the present invention. 5 Referring to Fig. 2, the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A patterned substrate for gallium nitride-based light emitting diode, comprising: a patterned substrate having patterns, wherein the plurality of patterns are circle type having diameters (d) and the distances between the centers of the patterns are pitches (p), and the cross sections of the patterns are extruded shapes and have heights (h), and wherein the value of [diameter (d)/pitch (p)] is larger than (2.6)/3, and equal or smaller than 3/3.
The patterned substrate of claim 1, wherein the heights (h) are larger than (d/2)-0.10 m, and are the smaller than (d/2) + 0.10 rm.
canceled
A planar type g allium nitride-based light emitting diode having a patterned substrate, the diode comprising: 2388586 Application No.: 14/923,935 Docket No.: 17923/065001 a patterned substrate having patterns, a buffer layer, a first doping layer, an active layer, and a second doping layer, wherein the plurality of patterns are circle type having diameters (d) and t he distances between the centers of the patterns are pitches (p), and the cross sections of the patterns are extruded shapes and have heights (h), and wherein the value of [diameter (d)/pitch (p)] is larger than 2.6/3, and equal or smaller than 3/3.
The patterned substrate of claim 5, wherein the heights (h) are larger than (d/2)-0.10 p m and are the smaller than (d/2) + 0.10 pm.
238858S 3 canceled
Layer stacks claimed or described, ordered top of device to substrate.
patterned substrate for GaN-based LED
planar type GaN-based LED with patterned substrate
Materials described outside the worked examples.
sapphire
gallium nitride
GaN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,899,569Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 shows a various kinds of patterned shapes in the patterned substrate according to an embodiment of the present invention. 5 Referring to Fig. 2, the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A patterned substrate for gallium nitride-based light emitting diode, comprising: a patterned substrate having patterns, wherein the plurality of patterns are circle type having diameters (d) and the distances between the centers of the patterns are pitches (p), and the cross sections of the patterns are extruded shapes and have heights (h), and wherein the value of [diameter (d)/pitch (p)] is larger than (2.6)/3, and equal or smaller than 3/3.
The patterned substrate of claim 1, wherein the heights (h) are larger than (d/2)-0.10 m, and are the smaller than (d/2) + 0.10 rm.
canceled
A planar type g allium nitride-based light emitting diode having a patterned substrate, the diode comprising: 2388586 Application No.: 14/923,935 Docket No.: 17923/065001 a patterned substrate having patterns, a buffer layer, a first doping layer, an active layer, and a second doping layer, wherein the plurality of patterns are circle type having diameters (d) and t he distances between the centers of the patterns are pitches (p), and the cross sections of the patterns are extruded shapes and have heights (h), and wherein the value of [diameter (d)/pitch (p)] is larger than 2.6/3, and equal or smaller than 3/3.
The patterned substrate of claim 5, wherein the heights (h) are larger than (d/2)-0.10 p m and are the smaller than (d/2) + 0.10 pm.
238858S 3 canceled
Layer stacks claimed or described, ordered top of device to substrate.
patterned substrate for GaN-based LED
planar type GaN-based LED with patterned substrate
Materials described outside the worked examples.
sapphire
gallium nitride
GaN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,899,569Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 shows a various kinds of patterned shapes in the patterned substrate according to an embodiment of the present invention. 5 Referring to Fig. 2, the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A patterned substrate for gallium nitride-based light emitting diode, comprising: a patterned substrate having patterns, wherein the plurality of patterns are circle type having diameters (d) and the distances between the centers of the patterns are pitches (p), and the cross sections of the patterns are extruded shapes and have heights (h), and wherein the value of [diameter (d)/pitch (p)] is larger than (2.6)/3, and equal or smaller than 3/3.
The patterned substrate of claim 1, wherein the heights (h) are larger than (d/2)-0.10 m, and are the smaller than (d/2) + 0.10 rm.
canceled
A planar type g allium nitride-based light emitting diode having a patterned substrate, the diode comprising: 2388586 Application No.: 14/923,935 Docket No.: 17923/065001 a patterned substrate having patterns, a buffer layer, a first doping layer, an active layer, and a second doping layer, wherein the plurality of patterns are circle type having diameters (d) and t he distances between the centers of the patterns are pitches (p), and the cross sections of the patterns are extruded shapes and have heights (h), and wherein the value of [diameter (d)/pitch (p)] is larger than 2.6/3, and equal or smaller than 3/3.
The patterned substrate of claim 5, wherein the heights (h) are larger than (d/2)-0.10 p m and are the smaller than (d/2) + 0.10 pm.
238858S 3 canceled
Layer stacks claimed or described, ordered top of device to substrate.
patterned substrate for GaN-based LED
planar type GaN-based LED with patterned substrate
Materials described outside the worked examples.
sapphire
gallium nitride
GaN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,899,569Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 shows a various kinds of patterned shapes in the patterned substrate according to an embodiment of the present invention. 5 Referring to Fig. 2, the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A patterned substrate for gallium nitride-based light emitting diode, comprising: a patterned substrate having patterns, wherein the plurality of patterns are circle type having diameters (d) and the distances between the centers of the patterns are pitches (p), and the cross sections of the patterns are extruded shapes and have heights (h), and wherein the value of [diameter (d)/pitch (p)] is larger than (2.6)/3, and equal or smaller than 3/3.
The patterned substrate of claim 1, wherein the heights (h) are larger than (d/2)-0.10 m, and are the smaller than (d/2) + 0.10 rm.
canceled
A planar type g allium nitride-based light emitting diode having a patterned substrate, the diode comprising: 2388586 Application No.: 14/923,935 Docket No.: 17923/065001 a patterned substrate having patterns, a buffer layer, a first doping layer, an active layer, and a second doping layer, wherein the plurality of patterns are circle type having diameters (d) and t he distances between the centers of the patterns are pitches (p), and the cross sections of the patterns are extruded shapes and have heights (h), and wherein the value of [diameter (d)/pitch (p)] is larger than 2.6/3, and equal or smaller than 3/3.
The patterned substrate of claim 5, wherein the heights (h) are larger than (d/2)-0.10 p m and are the smaller than (d/2) + 0.10 pm.
238858S 3 canceled
Layer stacks claimed or described, ordered top of device to substrate.
patterned substrate for GaN-based LED
planar type GaN-based LED with patterned substrate
Materials described outside the worked examples.
sapphire
gallium nitride
GaN
Related documents with shared materials, methods, properties, or citations.