Patent
US 8,912,025Method for Manufacture of Bright GaN LEDs Using a Selective Removal Process
Andrew J. Felker, Raphael L. Aldaz, Max Batres
Soraa, Inc.·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,912,025Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing high brightness LED devices, the method of manufacturing comprising: providing a gallium and nitrogen substrate having a surface with a plurali ty of light emitting diodes; treating the a-gallium-and-nitrgen substrate h emittng-4edes to form a plurality of trenches among the light emitting diodes, the plurality of trenches extending from the surface toward an opposing surface, by scanning a coherent beam of energy onto the surface, the plurality of trenches extending from the surface towara su-faee- wherein the step of treating causes ea ttsiin g formation of slag along the plurality of trenches; and subjecting the trenches and the slag to a chemical solution including potassium ferricyanide to substantially remove the slag without substantially changing the trenches, wherein the temperature of the chemical solution ranges from about 60 to 75 de gr ees Celsius, and the chemical solution comprises potassium hexa cy anoferrate in a range of 30 % to 40% by weight, potassium hydroxide in a range of 1% to 5 0% by weight, and water in a ran g e of 55%-69% by weight. currently amended
The method of claim 1 wherein the substrate comprises GaN, an d the slag matefial is formed overlying each of the trenches, and at least some trenches have a protruding portion of slag, the slag having a lower density than a density of the substrate. currently amended
The method of claim 1 further comprising separating the plurality of light emitting diodes from each other.
The method of claim 1 f u rther comprising 0C. Page 5 of 9 comprising heating the chemical hy dreehlerc-ae aeid wherein the plurality of trenches are formed using a heating the chemical solution to approximately
canceled
canceled
A method of separating individual semiconductor die having light emitting diodes formed on a surface of a substrate, wherein the substrate comprises inetdin g gallium nitride, the method comprising: forming a plurality of trenches in the substrate by scanning the substrate with a coherent beam of energy, the plurality of trenches extending from the surface of the substrate toward an opposing surface, the step of forming the plurality of trenches also forming slag along the plurality of trenches dur;g the fofmato of the plurality of trene subjecting the substrate, including the trenches and the slag, to a chemical solution to selectively remove substantially all of the slag mater ial without substantially changing the trenches,, potassium feyanide solution, or a hydrochlori aci soltion; and separating the individual semiconductor die from each othe r wherein the temperature of the chemical solution ranges from about 60 to 75 degrees Celsius, and the chemical solution consists of potassium hexa cy anoferrate in a range of 30 % to 40% by weight, potassium hydroxide in a range of l% to 5 0% by weight and water in a range of 55%-69% by weight. Page 3 of 9 App l. No. 13/304,182 PATENT Amdt. dated Response to Office Action mailed on 9-10.
The method as recited in claim 8 f u rther comprising heating the chemical hydreehleri-aid solution to approximately 65 0C, with the hydrochloric weight.
The method as recited in claim 8 f u rther comprising, after the step of forming the plurality of trenches, a step of mounting the substrate on a flexible adhesive layer.
canceled
canceled
A method of manufacturing light emitting diode (LED) devices, the method comprising: providing a sapphire substrate including a layer of material, the la y er containing gallium and nitrogen and eentaining materia having a plurality of LEDs thereon; forming a plurality of trenches in at least the layer of g allium and nitroge contaning material by scanning the substrate with a coherent beam of energy, thereby the step ef scanig causing ablation of th e surface regions of the substrate and formation of slag along the plurality of trenches; subjecting the substrate, including the trenches and the slag, to a chemical solution to selectively remove the slag without substantially changing the trenches, the chemieal solu tion ahi; and separating the plurality of LEDs from each other using the trenches, wherein the temperature of the chemical solution ranges from about 60 to 75 degrees Celsius, and the chemical solution comprises potassium hexa cy anoferrate in a range of 30 % to 40% by weight, potassium hydroxide in a range of l% to 5 0% by weight and water in a range of 55%-69% by weight. Page 4 of 9 App l. No. 13/304,182 PATENT Amdt. dated Response to Office Action mailed on
The method as recited in claim 13 wherein: 55%-water by-weight; wherein an adhesive tape is affixed to a bottom surface of the substrate; and whe reim the LEDs are separated from each other by the trenches and then each LED is removed from the tape. currently amended
The method as recited in claim 13 f u rther id solution to above about 65 C, the-hydreehlerie
The method as recited in claim 13 [[15]] pulsed laser.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED on GaN substrate
GaN LED on sapphire substrate
Materials described outside the worked examples.
gallium nitride (GaN) substrate
GaN
potassium hexacyanoferrate (potassium ferricyanide)
K3[Fe(CN)6]
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical absorption coefficient of nitride substrate | — | GaN |
light output increase after slag removal | — | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,912,025Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing high brightness LED devices, the method of manufacturing comprising: providing a gallium and nitrogen substrate having a surface with a plurali ty of light emitting diodes; treating the a-gallium-and-nitrgen substrate h emittng-4edes to form a plurality of trenches among the light emitting diodes, the plurality of trenches extending from the surface toward an opposing surface, by scanning a coherent beam of energy onto the surface, the plurality of trenches extending from the surface towara su-faee- wherein the step of treating causes ea ttsiin g formation of slag along the plurality of trenches; and subjecting the trenches and the slag to a chemical solution including potassium ferricyanide to substantially remove the slag without substantially changing the trenches, wherein the temperature of the chemical solution ranges from about 60 to 75 de gr ees Celsius, and the chemical solution comprises potassium hexa cy anoferrate in a range of 30 % to 40% by weight, potassium hydroxide in a range of 1% to 5 0% by weight, and water in a ran g e of 55%-69% by weight. currently amended
The method of claim 1 wherein the substrate comprises GaN, an d the slag matefial is formed overlying each of the trenches, and at least some trenches have a protruding portion of slag, the slag having a lower density than a density of the substrate. currently amended
The method of claim 1 further comprising separating the plurality of light emitting diodes from each other.
The method of claim 1 f u rther comprising 0C. Page 5 of 9 comprising heating the chemical hy dreehlerc-ae aeid wherein the plurality of trenches are formed using a heating the chemical solution to approximately
canceled
canceled
A method of separating individual semiconductor die having light emitting diodes formed on a surface of a substrate, wherein the substrate comprises inetdin g gallium nitride, the method comprising: forming a plurality of trenches in the substrate by scanning the substrate with a coherent beam of energy, the plurality of trenches extending from the surface of the substrate toward an opposing surface, the step of forming the plurality of trenches also forming slag along the plurality of trenches dur;g the fofmato of the plurality of trene subjecting the substrate, including the trenches and the slag, to a chemical solution to selectively remove substantially all of the slag mater ial without substantially changing the trenches,, potassium feyanide solution, or a hydrochlori aci soltion; and separating the individual semiconductor die from each othe r wherein the temperature of the chemical solution ranges from about 60 to 75 degrees Celsius, and the chemical solution consists of potassium hexa cy anoferrate in a range of 30 % to 40% by weight, potassium hydroxide in a range of l% to 5 0% by weight and water in a range of 55%-69% by weight. Page 3 of 9 App l. No. 13/304,182 PATENT Amdt. dated Response to Office Action mailed on 9-10.
The method as recited in claim 8 f u rther comprising heating the chemical hydreehleri-aid solution to approximately 65 0C, with the hydrochloric weight.
The method as recited in claim 8 f u rther comprising, after the step of forming the plurality of trenches, a step of mounting the substrate on a flexible adhesive layer.
canceled
canceled
A method of manufacturing light emitting diode (LED) devices, the method comprising: providing a sapphire substrate including a layer of material, the la y er containing gallium and nitrogen and eentaining materia having a plurality of LEDs thereon; forming a plurality of trenches in at least the layer of g allium and nitroge contaning material by scanning the substrate with a coherent beam of energy, thereby the step ef scanig causing ablation of th e surface regions of the substrate and formation of slag along the plurality of trenches; subjecting the substrate, including the trenches and the slag, to a chemical solution to selectively remove the slag without substantially changing the trenches, the chemieal solu tion ahi; and separating the plurality of LEDs from each other using the trenches, wherein the temperature of the chemical solution ranges from about 60 to 75 degrees Celsius, and the chemical solution comprises potassium hexa cy anoferrate in a range of 30 % to 40% by weight, potassium hydroxide in a range of l% to 5 0% by weight and water in a range of 55%-69% by weight. Page 4 of 9 App l. No. 13/304,182 PATENT Amdt. dated Response to Office Action mailed on
The method as recited in claim 13 wherein: 55%-water by-weight; wherein an adhesive tape is affixed to a bottom surface of the substrate; and whe reim the LEDs are separated from each other by the trenches and then each LED is removed from the tape. currently amended
The method as recited in claim 13 f u rther id solution to above about 65 C, the-hydreehlerie
The method as recited in claim 13 [[15]] pulsed laser.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED on GaN substrate
GaN LED on sapphire substrate
Materials described outside the worked examples.
gallium nitride (GaN) substrate
GaN
potassium hexacyanoferrate (potassium ferricyanide)
K3[Fe(CN)6]
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical absorption coefficient of nitride substrate | — | GaN |
light output increase after slag removal | — | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,912,025Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing high brightness LED devices, the method of manufacturing comprising: providing a gallium and nitrogen substrate having a surface with a plurali ty of light emitting diodes; treating the a-gallium-and-nitrgen substrate h emittng-4edes to form a plurality of trenches among the light emitting diodes, the plurality of trenches extending from the surface toward an opposing surface, by scanning a coherent beam of energy onto the surface, the plurality of trenches extending from the surface towara su-faee- wherein the step of treating causes ea ttsiin g formation of slag along the plurality of trenches; and subjecting the trenches and the slag to a chemical solution including potassium ferricyanide to substantially remove the slag without substantially changing the trenches, wherein the temperature of the chemical solution ranges from about 60 to 75 de gr ees Celsius, and the chemical solution comprises potassium hexa cy anoferrate in a range of 30 % to 40% by weight, potassium hydroxide in a range of 1% to 5 0% by weight, and water in a ran g e of 55%-69% by weight. currently amended
The method of claim 1 wherein the substrate comprises GaN, an d the slag matefial is formed overlying each of the trenches, and at least some trenches have a protruding portion of slag, the slag having a lower density than a density of the substrate. currently amended
The method of claim 1 further comprising separating the plurality of light emitting diodes from each other.
The method of claim 1 f u rther comprising 0C. Page 5 of 9 comprising heating the chemical hy dreehlerc-ae aeid wherein the plurality of trenches are formed using a heating the chemical solution to approximately
canceled
canceled
A method of separating individual semiconductor die having light emitting diodes formed on a surface of a substrate, wherein the substrate comprises inetdin g gallium nitride, the method comprising: forming a plurality of trenches in the substrate by scanning the substrate with a coherent beam of energy, the plurality of trenches extending from the surface of the substrate toward an opposing surface, the step of forming the plurality of trenches also forming slag along the plurality of trenches dur;g the fofmato of the plurality of trene subjecting the substrate, including the trenches and the slag, to a chemical solution to selectively remove substantially all of the slag mater ial without substantially changing the trenches,, potassium feyanide solution, or a hydrochlori aci soltion; and separating the individual semiconductor die from each othe r wherein the temperature of the chemical solution ranges from about 60 to 75 degrees Celsius, and the chemical solution consists of potassium hexa cy anoferrate in a range of 30 % to 40% by weight, potassium hydroxide in a range of l% to 5 0% by weight and water in a range of 55%-69% by weight. Page 3 of 9 App l. No. 13/304,182 PATENT Amdt. dated Response to Office Action mailed on 9-10.
The method as recited in claim 8 f u rther comprising heating the chemical hydreehleri-aid solution to approximately 65 0C, with the hydrochloric weight.
The method as recited in claim 8 f u rther comprising, after the step of forming the plurality of trenches, a step of mounting the substrate on a flexible adhesive layer.
canceled
canceled
A method of manufacturing light emitting diode (LED) devices, the method comprising: providing a sapphire substrate including a layer of material, the la y er containing gallium and nitrogen and eentaining materia having a plurality of LEDs thereon; forming a plurality of trenches in at least the layer of g allium and nitroge contaning material by scanning the substrate with a coherent beam of energy, thereby the step ef scanig causing ablation of th e surface regions of the substrate and formation of slag along the plurality of trenches; subjecting the substrate, including the trenches and the slag, to a chemical solution to selectively remove the slag without substantially changing the trenches, the chemieal solu tion ahi; and separating the plurality of LEDs from each other using the trenches, wherein the temperature of the chemical solution ranges from about 60 to 75 degrees Celsius, and the chemical solution comprises potassium hexa cy anoferrate in a range of 30 % to 40% by weight, potassium hydroxide in a range of l% to 5 0% by weight and water in a range of 55%-69% by weight. Page 4 of 9 App l. No. 13/304,182 PATENT Amdt. dated Response to Office Action mailed on
The method as recited in claim 13 wherein: 55%-water by-weight; wherein an adhesive tape is affixed to a bottom surface of the substrate; and whe reim the LEDs are separated from each other by the trenches and then each LED is removed from the tape. currently amended
The method as recited in claim 13 f u rther id solution to above about 65 C, the-hydreehlerie
The method as recited in claim 13 [[15]] pulsed laser.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED on GaN substrate
GaN LED on sapphire substrate
Materials described outside the worked examples.
gallium nitride (GaN) substrate
GaN
potassium hexacyanoferrate (potassium ferricyanide)
K3[Fe(CN)6]
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical absorption coefficient of nitride substrate | — | GaN |
light output increase after slag removal | — | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,912,025Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing high brightness LED devices, the method of manufacturing comprising: providing a gallium and nitrogen substrate having a surface with a plurali ty of light emitting diodes; treating the a-gallium-and-nitrgen substrate h emittng-4edes to form a plurality of trenches among the light emitting diodes, the plurality of trenches extending from the surface toward an opposing surface, by scanning a coherent beam of energy onto the surface, the plurality of trenches extending from the surface towara su-faee- wherein the step of treating causes ea ttsiin g formation of slag along the plurality of trenches; and subjecting the trenches and the slag to a chemical solution including potassium ferricyanide to substantially remove the slag without substantially changing the trenches, wherein the temperature of the chemical solution ranges from about 60 to 75 de gr ees Celsius, and the chemical solution comprises potassium hexa cy anoferrate in a range of 30 % to 40% by weight, potassium hydroxide in a range of 1% to 5 0% by weight, and water in a ran g e of 55%-69% by weight. currently amended
The method of claim 1 wherein the substrate comprises GaN, an d the slag matefial is formed overlying each of the trenches, and at least some trenches have a protruding portion of slag, the slag having a lower density than a density of the substrate. currently amended
The method of claim 1 further comprising separating the plurality of light emitting diodes from each other.
The method of claim 1 f u rther comprising 0C. Page 5 of 9 comprising heating the chemical hy dreehlerc-ae aeid wherein the plurality of trenches are formed using a heating the chemical solution to approximately
canceled
canceled
A method of separating individual semiconductor die having light emitting diodes formed on a surface of a substrate, wherein the substrate comprises inetdin g gallium nitride, the method comprising: forming a plurality of trenches in the substrate by scanning the substrate with a coherent beam of energy, the plurality of trenches extending from the surface of the substrate toward an opposing surface, the step of forming the plurality of trenches also forming slag along the plurality of trenches dur;g the fofmato of the plurality of trene subjecting the substrate, including the trenches and the slag, to a chemical solution to selectively remove substantially all of the slag mater ial without substantially changing the trenches,, potassium feyanide solution, or a hydrochlori aci soltion; and separating the individual semiconductor die from each othe r wherein the temperature of the chemical solution ranges from about 60 to 75 degrees Celsius, and the chemical solution consists of potassium hexa cy anoferrate in a range of 30 % to 40% by weight, potassium hydroxide in a range of l% to 5 0% by weight and water in a range of 55%-69% by weight. Page 3 of 9 App l. No. 13/304,182 PATENT Amdt. dated Response to Office Action mailed on 9-10.
The method as recited in claim 8 f u rther comprising heating the chemical hydreehleri-aid solution to approximately 65 0C, with the hydrochloric weight.
The method as recited in claim 8 f u rther comprising, after the step of forming the plurality of trenches, a step of mounting the substrate on a flexible adhesive layer.
canceled
canceled
A method of manufacturing light emitting diode (LED) devices, the method comprising: providing a sapphire substrate including a layer of material, the la y er containing gallium and nitrogen and eentaining materia having a plurality of LEDs thereon; forming a plurality of trenches in at least the layer of g allium and nitroge contaning material by scanning the substrate with a coherent beam of energy, thereby the step ef scanig causing ablation of th e surface regions of the substrate and formation of slag along the plurality of trenches; subjecting the substrate, including the trenches and the slag, to a chemical solution to selectively remove the slag without substantially changing the trenches, the chemieal solu tion ahi; and separating the plurality of LEDs from each other using the trenches, wherein the temperature of the chemical solution ranges from about 60 to 75 degrees Celsius, and the chemical solution comprises potassium hexa cy anoferrate in a range of 30 % to 40% by weight, potassium hydroxide in a range of l% to 5 0% by weight and water in a range of 55%-69% by weight. Page 4 of 9 App l. No. 13/304,182 PATENT Amdt. dated Response to Office Action mailed on
The method as recited in claim 13 wherein: 55%-water by-weight; wherein an adhesive tape is affixed to a bottom surface of the substrate; and whe reim the LEDs are separated from each other by the trenches and then each LED is removed from the tape. currently amended
The method as recited in claim 13 f u rther id solution to above about 65 C, the-hydreehlerie
The method as recited in claim 13 [[15]] pulsed laser.
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED on GaN substrate
GaN LED on sapphire substrate
Materials described outside the worked examples.
gallium nitride (GaN) substrate
GaN
potassium hexacyanoferrate (potassium ferricyanide)
K3[Fe(CN)6]
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical absorption coefficient of nitride substrate | — | GaN |
light output increase after slag removal | — | — |
Related documents with shared materials, methods, properties, or citations.
potassium hydroxide
KOH
water
H₂O
sapphire substrate
Al₂O₃
gallium and nitrogen containing layer on sapphire
InGaN/GaN quantum wells (active layer)
platinum
Pt
silver
Ag
potassium hydroxide solution (45 wt% KOH, 55 wt% water)
hydrochloric acid solution (~35 wt% HCl, ~65 wt% water)
slag (laser ablation residue on GaN)
Thickness | 465–700 nm | — |
Thickness | 700–6667 nm | — |
Thickness | 1–20 nm | — |
Thickness | 20–500 nm | — |
Thickness | 200–400 nm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≥ 3 mm | — |
potassium hydroxide
KOH
water
H₂O
sapphire substrate
Al₂O₃
gallium and nitrogen containing layer on sapphire
InGaN/GaN quantum wells (active layer)
platinum
Pt
silver
Ag
potassium hydroxide solution (45 wt% KOH, 55 wt% water)
hydrochloric acid solution (~35 wt% HCl, ~65 wt% water)
slag (laser ablation residue on GaN)
Thickness | 465–700 nm | — |
Thickness | 700–6667 nm | — |
Thickness | 1–20 nm | — |
Thickness | 20–500 nm | — |
Thickness | 200–400 nm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≥ 3 mm | — |
potassium hydroxide
KOH
water
H₂O
sapphire substrate
Al₂O₃
gallium and nitrogen containing layer on sapphire
InGaN/GaN quantum wells (active layer)
platinum
Pt
silver
Ag
potassium hydroxide solution (45 wt% KOH, 55 wt% water)
hydrochloric acid solution (~35 wt% HCl, ~65 wt% water)
slag (laser ablation residue on GaN)
Thickness | 465–700 nm | — |
Thickness | 700–6667 nm | — |
Thickness | 1–20 nm | — |
Thickness | 20–500 nm | — |
Thickness | 200–400 nm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≥ 3 mm | — |
potassium hydroxide
KOH
water
H₂O
sapphire substrate
Al₂O₃
gallium and nitrogen containing layer on sapphire
InGaN/GaN quantum wells (active layer)
platinum
Pt
silver
Ag
potassium hydroxide solution (45 wt% KOH, 55 wt% water)
hydrochloric acid solution (~35 wt% HCl, ~65 wt% water)
slag (laser ablation residue on GaN)
Thickness | 465–700 nm | — |
Thickness | 700–6667 nm | — |
Thickness | 1–20 nm | — |
Thickness | 20–500 nm | — |
Thickness | 200–400 nm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≥ 3 mm | — |