Patent
US 8,211,722FLIP-CHIP GAN LED FABRICATION METHOD
Lien-Shine LU
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 8,211,722Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flip-chip LED fabrication flow chart in 5 accordance with the present invention.
FIG. 2 is a schematic sectional view illustrating the structure of the GaN epitaxial layer of a GaN LED chip prepared in accordance with the present invention.
FIG. 3, illustrating a second groove formed in the GaN epitaxial layer.
FIG. 4, illustrating a translucent conducting layer formed on the surface of the epitaxial layer 15 portions of the epitaxial layer and a P-type electrode pad …
FIG. 5, illustrating a first isolation protection layer formed on the P-type electrode pad, the N-type 20 electrode pad, the first groove and the second groove …
FIG. 6, illustrating a second isolation protection layer on the surface of the first isolation protection layer and the metallic reflection layer.
FIG. 7, illustrating a third groove 5 formed in the first isolation protection layer and the second isolation protection layer adjacent to the metallic …
FIG. 8 corresponds to
FIG. 9 is a schematic sectional view of an individual GaN 10 LED chip obtained according to the present invention.
FIG. 10 is a schematic drawing illustrating an individual GaN LED chip bonded to a thermal substrate with a conducting adhesive.
FIG. 11 corresponds to
FIG. 12 is a schematic structural view of a GaN LED chip according to the prior art.
FIG. 13 is a schematic sectional view of a flip-chip LED 20 according to the prior art.
FIG. 14 is a schematic sectional view of another structure of flip-chip LED according to the prior art.
FIG. 15 illustrates still another prior art LED design disclosed in US 6514782, which comprises a sapphire substrate D 1, an N-type GaN ohmic contact layer D2, …
FIG. 16 is a schematic sectional view of still another 12 structure of flip-chip LED according to the prior art.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The first isolation protection layer 17 and the metallic reflection layer 18 are respectively formed at two opposite sides relative to the second isolation protection layer 19 so that the translucent conducting layer 14 and the metallic reflection 20 layer 18 are electrically isolated to minimize forward voltage and power consumption during electricity conduction operation of the metallic reflection layer 18, avoiding interference with the light-emitting efficiency of the individual GaN LED chip 1. Further, the metallic reflection layer 18 is directly mounted inside the individual GaN LED chip 1 for direct reflection, avoiding light loss.
The flip-chip LED fabrication method as claimed in claim 1, wherein said N-type electrode pad extends to said N-type GaN ohmic contact layer.
7. The flip-chip LED fabrication method as claimed in claim 1, wherein said first isolation protection layer covers said first groove and said second groove completely.
Subject to the formation of the first groove 101 and the second 5 groove 102 in the GaN epitaxial layer 2 by etching to expose a part of the N-type GaN ohmic contact layer 11 of the GaN epitaxial layer 2 and to divide the GaN epitaxial layer 2 into two epitaxial layer portions 2A;2B, the posteriorly formed P-type electrode pad 15 and N-type electrode pad 16 have the 10 same elevation, stabilizing electric connection between the individual GaN LED chip 1 and the thermal substrate 3 and improving LED module yield rate.
The first isolation protection layer 17 and the second isolation protection layer 19 are formed on the two epitaxial layer 15 portions 2A;2B at two opposite sides relative to the second groove 102, and therefore, the two epitaxial layer portions 2A;2B are well isolated and protected, avoiding a short circuit and enhancing operation reliability.
The third groove 103 is formed in the first isolation protection 20 layer 17 and the second isolation protection layer 19 adjacent to the metallic reflection layer 18 by etching to expose one lateral side of the N-type electrode pad 16 so that the applied conducting material 4 can climb over the N-type electrode pad 20 16 into the third groove 103 and be accumulated and cured therein, enhancing the binding strength and the strength of solidification and the connection stability between the N-type electrode pad 16 of the individual GaN LED chip 1 and the 5 negative solder pad 32 of the thermal substrate 3.
The individual GaN LED chip 1 is electrically connected with the thermal substrate 3 by means of the large area conducting material 4, and the insulative adhesive 5 is bonded to the thermal substrate 3 between the positive solder pad 31 and the 10 negative solder pad 32 so that the second isolation protection layer 19 can be fixedly secured to the thermal substrate 3 between the positive solder pad 31 and the negative solder pad 32 by means of the conducting material 4, saving the manufacturing cost, facilitating heat dissipation, improving the 15 luminous efficiency of the individual GaN LED chip 1 and its lifespan. Although a particular embodiment of the invention has been described in detail for purposes of illustration, various modifications and enhancements may be made without departing 20 from the spirit and scope of the invention. Accordingly, the invention is not to be limited except as by the appended claims. Claims What is claimed is:
Layer stacks claimed or described, ordered top of device to substrate.
flip-chip GaN LED chip
Materials described outside the worked examples.
GaN epitaxial layer
translucent conducting layer
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,211,722Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flip-chip LED fabrication flow chart in 5 accordance with the present invention.
FIG. 2 is a schematic sectional view illustrating the structure of the GaN epitaxial layer of a GaN LED chip prepared in accordance with the present invention.
FIG. 3, illustrating a second groove formed in the GaN epitaxial layer.
FIG. 4, illustrating a translucent conducting layer formed on the surface of the epitaxial layer 15 portions of the epitaxial layer and a P-type electrode pad …
FIG. 5, illustrating a first isolation protection layer formed on the P-type electrode pad, the N-type 20 electrode pad, the first groove and the second groove …
FIG. 6, illustrating a second isolation protection layer on the surface of the first isolation protection layer and the metallic reflection layer.
FIG. 7, illustrating a third groove 5 formed in the first isolation protection layer and the second isolation protection layer adjacent to the metallic …
FIG. 8 corresponds to
FIG. 9 is a schematic sectional view of an individual GaN 10 LED chip obtained according to the present invention.
FIG. 10 is a schematic drawing illustrating an individual GaN LED chip bonded to a thermal substrate with a conducting adhesive.
FIG. 11 corresponds to
FIG. 12 is a schematic structural view of a GaN LED chip according to the prior art.
FIG. 13 is a schematic sectional view of a flip-chip LED 20 according to the prior art.
FIG. 14 is a schematic sectional view of another structure of flip-chip LED according to the prior art.
FIG. 15 illustrates still another prior art LED design disclosed in US 6514782, which comprises a sapphire substrate D 1, an N-type GaN ohmic contact layer D2, …
FIG. 16 is a schematic sectional view of still another 12 structure of flip-chip LED according to the prior art.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The first isolation protection layer 17 and the metallic reflection layer 18 are respectively formed at two opposite sides relative to the second isolation protection layer 19 so that the translucent conducting layer 14 and the metallic reflection 20 layer 18 are electrically isolated to minimize forward voltage and power consumption during electricity conduction operation of the metallic reflection layer 18, avoiding interference with the light-emitting efficiency of the individual GaN LED chip 1. Further, the metallic reflection layer 18 is directly mounted inside the individual GaN LED chip 1 for direct reflection, avoiding light loss.
The flip-chip LED fabrication method as claimed in claim 1, wherein said N-type electrode pad extends to said N-type GaN ohmic contact layer.
7. The flip-chip LED fabrication method as claimed in claim 1, wherein said first isolation protection layer covers said first groove and said second groove completely.
Subject to the formation of the first groove 101 and the second 5 groove 102 in the GaN epitaxial layer 2 by etching to expose a part of the N-type GaN ohmic contact layer 11 of the GaN epitaxial layer 2 and to divide the GaN epitaxial layer 2 into two epitaxial layer portions 2A;2B, the posteriorly formed P-type electrode pad 15 and N-type electrode pad 16 have the 10 same elevation, stabilizing electric connection between the individual GaN LED chip 1 and the thermal substrate 3 and improving LED module yield rate.
The first isolation protection layer 17 and the second isolation protection layer 19 are formed on the two epitaxial layer 15 portions 2A;2B at two opposite sides relative to the second groove 102, and therefore, the two epitaxial layer portions 2A;2B are well isolated and protected, avoiding a short circuit and enhancing operation reliability.
The third groove 103 is formed in the first isolation protection 20 layer 17 and the second isolation protection layer 19 adjacent to the metallic reflection layer 18 by etching to expose one lateral side of the N-type electrode pad 16 so that the applied conducting material 4 can climb over the N-type electrode pad 20 16 into the third groove 103 and be accumulated and cured therein, enhancing the binding strength and the strength of solidification and the connection stability between the N-type electrode pad 16 of the individual GaN LED chip 1 and the 5 negative solder pad 32 of the thermal substrate 3.
The individual GaN LED chip 1 is electrically connected with the thermal substrate 3 by means of the large area conducting material 4, and the insulative adhesive 5 is bonded to the thermal substrate 3 between the positive solder pad 31 and the 10 negative solder pad 32 so that the second isolation protection layer 19 can be fixedly secured to the thermal substrate 3 between the positive solder pad 31 and the negative solder pad 32 by means of the conducting material 4, saving the manufacturing cost, facilitating heat dissipation, improving the 15 luminous efficiency of the individual GaN LED chip 1 and its lifespan. Although a particular embodiment of the invention has been described in detail for purposes of illustration, various modifications and enhancements may be made without departing 20 from the spirit and scope of the invention. Accordingly, the invention is not to be limited except as by the appended claims. Claims What is claimed is:
Layer stacks claimed or described, ordered top of device to substrate.
flip-chip GaN LED chip
Materials described outside the worked examples.
GaN epitaxial layer
translucent conducting layer
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,211,722Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flip-chip LED fabrication flow chart in 5 accordance with the present invention.
FIG. 2 is a schematic sectional view illustrating the structure of the GaN epitaxial layer of a GaN LED chip prepared in accordance with the present invention.
FIG. 3, illustrating a second groove formed in the GaN epitaxial layer.
FIG. 4, illustrating a translucent conducting layer formed on the surface of the epitaxial layer 15 portions of the epitaxial layer and a P-type electrode pad …
FIG. 5, illustrating a first isolation protection layer formed on the P-type electrode pad, the N-type 20 electrode pad, the first groove and the second groove …
FIG. 6, illustrating a second isolation protection layer on the surface of the first isolation protection layer and the metallic reflection layer.
FIG. 7, illustrating a third groove 5 formed in the first isolation protection layer and the second isolation protection layer adjacent to the metallic …
FIG. 8 corresponds to
FIG. 9 is a schematic sectional view of an individual GaN 10 LED chip obtained according to the present invention.
FIG. 10 is a schematic drawing illustrating an individual GaN LED chip bonded to a thermal substrate with a conducting adhesive.
FIG. 11 corresponds to
FIG. 12 is a schematic structural view of a GaN LED chip according to the prior art.
FIG. 13 is a schematic sectional view of a flip-chip LED 20 according to the prior art.
FIG. 14 is a schematic sectional view of another structure of flip-chip LED according to the prior art.
FIG. 15 illustrates still another prior art LED design disclosed in US 6514782, which comprises a sapphire substrate D 1, an N-type GaN ohmic contact layer D2, …
FIG. 16 is a schematic sectional view of still another 12 structure of flip-chip LED according to the prior art.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The first isolation protection layer 17 and the metallic reflection layer 18 are respectively formed at two opposite sides relative to the second isolation protection layer 19 so that the translucent conducting layer 14 and the metallic reflection 20 layer 18 are electrically isolated to minimize forward voltage and power consumption during electricity conduction operation of the metallic reflection layer 18, avoiding interference with the light-emitting efficiency of the individual GaN LED chip 1. Further, the metallic reflection layer 18 is directly mounted inside the individual GaN LED chip 1 for direct reflection, avoiding light loss.
The flip-chip LED fabrication method as claimed in claim 1, wherein said N-type electrode pad extends to said N-type GaN ohmic contact layer.
7. The flip-chip LED fabrication method as claimed in claim 1, wherein said first isolation protection layer covers said first groove and said second groove completely.
Subject to the formation of the first groove 101 and the second 5 groove 102 in the GaN epitaxial layer 2 by etching to expose a part of the N-type GaN ohmic contact layer 11 of the GaN epitaxial layer 2 and to divide the GaN epitaxial layer 2 into two epitaxial layer portions 2A;2B, the posteriorly formed P-type electrode pad 15 and N-type electrode pad 16 have the 10 same elevation, stabilizing electric connection between the individual GaN LED chip 1 and the thermal substrate 3 and improving LED module yield rate.
The first isolation protection layer 17 and the second isolation protection layer 19 are formed on the two epitaxial layer 15 portions 2A;2B at two opposite sides relative to the second groove 102, and therefore, the two epitaxial layer portions 2A;2B are well isolated and protected, avoiding a short circuit and enhancing operation reliability.
The third groove 103 is formed in the first isolation protection 20 layer 17 and the second isolation protection layer 19 adjacent to the metallic reflection layer 18 by etching to expose one lateral side of the N-type electrode pad 16 so that the applied conducting material 4 can climb over the N-type electrode pad 20 16 into the third groove 103 and be accumulated and cured therein, enhancing the binding strength and the strength of solidification and the connection stability between the N-type electrode pad 16 of the individual GaN LED chip 1 and the 5 negative solder pad 32 of the thermal substrate 3.
The individual GaN LED chip 1 is electrically connected with the thermal substrate 3 by means of the large area conducting material 4, and the insulative adhesive 5 is bonded to the thermal substrate 3 between the positive solder pad 31 and the 10 negative solder pad 32 so that the second isolation protection layer 19 can be fixedly secured to the thermal substrate 3 between the positive solder pad 31 and the negative solder pad 32 by means of the conducting material 4, saving the manufacturing cost, facilitating heat dissipation, improving the 15 luminous efficiency of the individual GaN LED chip 1 and its lifespan. Although a particular embodiment of the invention has been described in detail for purposes of illustration, various modifications and enhancements may be made without departing 20 from the spirit and scope of the invention. Accordingly, the invention is not to be limited except as by the appended claims. Claims What is claimed is:
Layer stacks claimed or described, ordered top of device to substrate.
flip-chip GaN LED chip
Materials described outside the worked examples.
GaN epitaxial layer
translucent conducting layer
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,211,722Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flip-chip LED fabrication flow chart in 5 accordance with the present invention.
FIG. 2 is a schematic sectional view illustrating the structure of the GaN epitaxial layer of a GaN LED chip prepared in accordance with the present invention.
FIG. 3, illustrating a second groove formed in the GaN epitaxial layer.
FIG. 4, illustrating a translucent conducting layer formed on the surface of the epitaxial layer 15 portions of the epitaxial layer and a P-type electrode pad …
FIG. 5, illustrating a first isolation protection layer formed on the P-type electrode pad, the N-type 20 electrode pad, the first groove and the second groove …
FIG. 6, illustrating a second isolation protection layer on the surface of the first isolation protection layer and the metallic reflection layer.
FIG. 7, illustrating a third groove 5 formed in the first isolation protection layer and the second isolation protection layer adjacent to the metallic …
FIG. 8 corresponds to
FIG. 9 is a schematic sectional view of an individual GaN 10 LED chip obtained according to the present invention.
FIG. 10 is a schematic drawing illustrating an individual GaN LED chip bonded to a thermal substrate with a conducting adhesive.
FIG. 11 corresponds to
FIG. 12 is a schematic structural view of a GaN LED chip according to the prior art.
FIG. 13 is a schematic sectional view of a flip-chip LED 20 according to the prior art.
FIG. 14 is a schematic sectional view of another structure of flip-chip LED according to the prior art.
FIG. 15 illustrates still another prior art LED design disclosed in US 6514782, which comprises a sapphire substrate D 1, an N-type GaN ohmic contact layer D2, …
FIG. 16 is a schematic sectional view of still another 12 structure of flip-chip LED according to the prior art.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The first isolation protection layer 17 and the metallic reflection layer 18 are respectively formed at two opposite sides relative to the second isolation protection layer 19 so that the translucent conducting layer 14 and the metallic reflection 20 layer 18 are electrically isolated to minimize forward voltage and power consumption during electricity conduction operation of the metallic reflection layer 18, avoiding interference with the light-emitting efficiency of the individual GaN LED chip 1. Further, the metallic reflection layer 18 is directly mounted inside the individual GaN LED chip 1 for direct reflection, avoiding light loss.
The flip-chip LED fabrication method as claimed in claim 1, wherein said N-type electrode pad extends to said N-type GaN ohmic contact layer.
7. The flip-chip LED fabrication method as claimed in claim 1, wherein said first isolation protection layer covers said first groove and said second groove completely.
Subject to the formation of the first groove 101 and the second 5 groove 102 in the GaN epitaxial layer 2 by etching to expose a part of the N-type GaN ohmic contact layer 11 of the GaN epitaxial layer 2 and to divide the GaN epitaxial layer 2 into two epitaxial layer portions 2A;2B, the posteriorly formed P-type electrode pad 15 and N-type electrode pad 16 have the 10 same elevation, stabilizing electric connection between the individual GaN LED chip 1 and the thermal substrate 3 and improving LED module yield rate.
The first isolation protection layer 17 and the second isolation protection layer 19 are formed on the two epitaxial layer 15 portions 2A;2B at two opposite sides relative to the second groove 102, and therefore, the two epitaxial layer portions 2A;2B are well isolated and protected, avoiding a short circuit and enhancing operation reliability.
The third groove 103 is formed in the first isolation protection 20 layer 17 and the second isolation protection layer 19 adjacent to the metallic reflection layer 18 by etching to expose one lateral side of the N-type electrode pad 16 so that the applied conducting material 4 can climb over the N-type electrode pad 20 16 into the third groove 103 and be accumulated and cured therein, enhancing the binding strength and the strength of solidification and the connection stability between the N-type electrode pad 16 of the individual GaN LED chip 1 and the 5 negative solder pad 32 of the thermal substrate 3.
The individual GaN LED chip 1 is electrically connected with the thermal substrate 3 by means of the large area conducting material 4, and the insulative adhesive 5 is bonded to the thermal substrate 3 between the positive solder pad 31 and the 10 negative solder pad 32 so that the second isolation protection layer 19 can be fixedly secured to the thermal substrate 3 between the positive solder pad 31 and the negative solder pad 32 by means of the conducting material 4, saving the manufacturing cost, facilitating heat dissipation, improving the 15 luminous efficiency of the individual GaN LED chip 1 and its lifespan. Although a particular embodiment of the invention has been described in detail for purposes of illustration, various modifications and enhancements may be made without departing 20 from the spirit and scope of the invention. Accordingly, the invention is not to be limited except as by the appended claims. Claims What is claimed is:
Layer stacks claimed or described, ordered top of device to substrate.
flip-chip GaN LED chip
Materials described outside the worked examples.
GaN epitaxial layer
translucent conducting layer
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
thermal substrate
No layer stack recorded.
first isolation protection layer
metallic reflection layer
second isolation protection layer
N-type GaN ohmic contact layer
N-type electrode pad
conducting material
insulative adhesive
P-type electrode pad
light-emitting layer
P-type semiconductor layer
sapphire substrate
thermal substrate
No layer stack recorded.
first isolation protection layer
metallic reflection layer
second isolation protection layer
N-type GaN ohmic contact layer
N-type electrode pad
conducting material
insulative adhesive
P-type electrode pad
light-emitting layer
P-type semiconductor layer
sapphire substrate
thermal substrate
No layer stack recorded.
first isolation protection layer
metallic reflection layer
second isolation protection layer
N-type GaN ohmic contact layer
N-type electrode pad
conducting material
insulative adhesive
P-type electrode pad
light-emitting layer
P-type semiconductor layer
sapphire substrate
thermal substrate
No layer stack recorded.
first isolation protection layer
metallic reflection layer
second isolation protection layer
N-type GaN ohmic contact layer
N-type electrode pad
conducting material
insulative adhesive
P-type electrode pad
light-emitting layer
P-type semiconductor layer
sapphire substrate