Method for preparing thin GaN layers by implantation and recycling of a starting substrate

Aur¿lie Tauzin

Patent

Atlas literature

Patent

US 8,778,775

Method for preparing thin GaN layers by implantation and recycling of a starting substrate

Aurélie Tauzin

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 23 dependent

1
IndependentGaNHe+H+
A method of fabrication of a thin layer of GaN from a starting substrate of which at least a thick surface area along a free face of the starting substrate comprises GaN, the method comprising the following steps: bombarding the free face of the starting substrate with helium ions and hydrogen ions, wherein the helium ions are implanted ﬁrst in the thick surface area and the hydrogen ions are implanted second, and wherein implantation doses of the helium ions and the hydrogen ions each range between 1.10 7 atoms/cm2 and 4.10 17 atoms/cm2; and applying a fracture treatment to the starting substrate adapted to cause a detachment of the thick surface area between the free face and an implantation depth of the helium ions and of the hydrogen ions from a remainder of the starting substrate.
1. 2
  Dependent← claim 1He+H+
  The method according to claim 1, wherein the implantation dose of the helium ions is at least equal to the implantation dose of the hydrogen ions.
2. 3
  Dependent← claim 1GaN
  The method according to claim 1 or claim 2, further comprising recycling the remainder of the starting substrate after applying the fracture treatment.
3. 5
  Dependent← claim 1GaN
  The method according to claim 1, further comprising bringing the starting substrate into intimate contact with a host substrate via the free -2- BR₁NK S......... i&tL f3Ni App. Ser. No. 12/51 8,198 Response to Oﬃce Action of Reply dated face before applying the fracture treatment.
4. 19
  Dependent← claim 1He+
  The method according to claim 1, wherein helium ion implantation dose ranges between 1.10 7 and 2.10 17 He +/cm2.
5. 20
  Dependent← claim 1H+
  The method according to claim 1, wherein the hydrogen ion implantation dose ranges between 1.10 7 and 2.10 17 H+/cm2.
6. 21
  Dependent← claim 1
  The method according to claim 1, wherein a -4- BR₁NK S......... i&tL f3Ni App. Ser. No. 12/51 8,198 Response to Oﬃce Action of Reply dated cumulative implantation dose is between approximately cm2.
7. 22
  Dependent← claim 1
  The method according to claim 1, wherein an implantation is greater than an implantation energy
8. 23
  Dependent← claim 1
  The method according to claim 1, wherein an between 90 keV and 210 keV and an implantation and 120 keV.
9. 24
  Dependent← claim 1
  The method according to claim 1, further perfecting the detachment of all the thin layer,
25
Independent
- 26. -5- R K......... i&tL f3Ni canceled
26
Independent
canceled 3.10 7 atoms/cm 2 and 4.5 10 17 atoms/implantation energy of the helium ion of the hydrogen ion implantation. implantation energy of the helium ions is energy of the hydrogen ions is between 60 keV comprising applying a ﬁnishing heat treatment for including in any non-bonded areas.

Materials

Materials described outside the worked examples.

GaN

Thin Layer Substrate Material

helium ions

He+

Process steps

Additional fabrication and treatment steps described in the patent.

Ion Implantation

Step 1

Process details

species order:helium first, hydrogen second

helium dose range:1e7 to 4e17 atoms/cm2

hydrogen dose range:1e7 to 4e17 atoms/cm2

helium energy range keV:90 to 210

hydrogen energy range keV:

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	≤ 1 µm	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Method for preparing thin GaN layers by implantation and recycling of a starting substrate | Matter42 Literature