Patent
US 9,356,190GaN-Based LED
JIANSEN ZHENG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,356,190Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram of a conventional LED. [0025]
FIG. 2 is a diagram of an improved LED structure. [0026]
FIG. 3 is a cross-sectional view of the GaN-based HBLED disclosed in Embodiment 1. [0027]
FIG. 4 is a top view of the GaN-based HBLED disclosed in Embodiment 1. [0028]
FIG. 5 is a cross-sectional view of the GaN-based HBLED disclosed in Embodiment 2. [0029]
FIG. 6 is a top view of the GaN-based HBLED disclosed in Embodiment 2. [0030]
FIG. 7 is a cross-sectional view of the GaN-based HBLED disclosed in Embodiment 3. [0031]
FIG. 8 is a top view of the GaN-based HBLED disclosed in Embodiment 3.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based LED, comprising: a substrate with front and back sides; an epitaxial layer formed over the front side of the substrate and including, from top down, a P-type layer, a light-emitting area, and an N-type layer; a current spreading layer formed over the P-type layer; a P electrode formed over the current spreading layer; a first reflecting layer between the current spreading layer and the epitaxial layer, disposed at a peripheral area of the epitaxial layer in a band-shaped distribution, and configured to reflect a portion of light emitted upward from the light-emitting area toward at least two sides of the LED to increase light extraction sideways and thereby improve a light distribution evenness; and a second reflecting layer over the back side the substrate.
The GaN-based LED of Claim 1, further comprising a third reflecting layer between the current spreading layer and the P electrode, underneath the P electrode.
The GaN-based LED of Claim 1, wherein the first reflecting layer has a closed annular shape.
The GaN-based LED of Claim 1, wherein the P electrode is disposed at a peripheral area of the current spreading layer, and wherein the first reflecting layer is disposed away from the P electrode.
The GaN-based LED of Claim 1, wherein a width of the first reflecting layer is [[about]] 5-30 pm.
The Ga N- based LED of Claim 1, wherein the first reflecting layer has an area of [[about]] 5%-30% of the light-emitting area of the epitaxial layer.
The Ga N- based LED of Claim 1, wherein the first reflecting layer comprises one of a DBR, a metal reflecting layer, or an ODR.
The Ga N- based LED of Claim 1, wherein the second reflecting layer comprises one of a DBR, a metal reflecting layer, or an ODR.
A light-emitting system comprising a plurality of Ga N- based LEDs, each LED comprising: a substrate with front and back sides; an epitaxial layer formed over the front side of the substrate and including, from top down, a P-type layer, a light-emitting area, and an N-type layer; a current spreading layer formed over the P-type layer; a P electrode formed over the current spreading layer; a first reflecting layer between the current spreading layer and the epitaxial layer, disposed at a peripheral area of the epitaxial layer in a band-shaped distribution, and configured to reflect a portion of light emitted upwards from the light-emitting area toward at least two sides of the LED to increase light extraction sideways and thereby improve a light distribution evenness; and 3 U.S. Patent Application Serial No. 14/536,713 Attorney Docket No.: 72626.0014 a second reflecting layer over the back side the substrate.
The system of Claim 11, each LED further comprising a third reflecting layer between the current spreading layer and the P electrode, underneath the P electrode.
The system of Claim 11, wherein the first reflecting layer has a closed annular shape.
The system of Claim 11, wherein the P electrode is disposed at a peripheral area of the current spreading layer, and wherein the first reflecting layer is disposed away from the P electrode.
The system of Claim 11, wherein a width of the first reflecting layer is [[about]] 5-30 pm.
The system of Claim 11, wherein the first reflecting layer has an area of [[about]] 5%-30% of the light-emitting area of the epitaxial layer.
The system of Claim 11, wherein the first reflecting layer comprises one of a DBR, a metal reflecting layer, or an ODR.
The system of Claim 11, wherein the second reflecting layer comprises one of a DBR, a metal reflecting layer, or an ODR.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED
Materials described outside the worked examples.
GaN-based semiconductor (epitaxial layer)
substrate (sapphire or SiC)
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,356,190Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram of a conventional LED. [0025]
FIG. 2 is a diagram of an improved LED structure. [0026]
FIG. 3 is a cross-sectional view of the GaN-based HBLED disclosed in Embodiment 1. [0027]
FIG. 4 is a top view of the GaN-based HBLED disclosed in Embodiment 1. [0028]
FIG. 5 is a cross-sectional view of the GaN-based HBLED disclosed in Embodiment 2. [0029]
FIG. 6 is a top view of the GaN-based HBLED disclosed in Embodiment 2. [0030]
FIG. 7 is a cross-sectional view of the GaN-based HBLED disclosed in Embodiment 3. [0031]
FIG. 8 is a top view of the GaN-based HBLED disclosed in Embodiment 3.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based LED, comprising: a substrate with front and back sides; an epitaxial layer formed over the front side of the substrate and including, from top down, a P-type layer, a light-emitting area, and an N-type layer; a current spreading layer formed over the P-type layer; a P electrode formed over the current spreading layer; a first reflecting layer between the current spreading layer and the epitaxial layer, disposed at a peripheral area of the epitaxial layer in a band-shaped distribution, and configured to reflect a portion of light emitted upward from the light-emitting area toward at least two sides of the LED to increase light extraction sideways and thereby improve a light distribution evenness; and a second reflecting layer over the back side the substrate.
The GaN-based LED of Claim 1, further comprising a third reflecting layer between the current spreading layer and the P electrode, underneath the P electrode.
The GaN-based LED of Claim 1, wherein the first reflecting layer has a closed annular shape.
The GaN-based LED of Claim 1, wherein the P electrode is disposed at a peripheral area of the current spreading layer, and wherein the first reflecting layer is disposed away from the P electrode.
The GaN-based LED of Claim 1, wherein a width of the first reflecting layer is [[about]] 5-30 pm.
The Ga N- based LED of Claim 1, wherein the first reflecting layer has an area of [[about]] 5%-30% of the light-emitting area of the epitaxial layer.
The Ga N- based LED of Claim 1, wherein the first reflecting layer comprises one of a DBR, a metal reflecting layer, or an ODR.
The Ga N- based LED of Claim 1, wherein the second reflecting layer comprises one of a DBR, a metal reflecting layer, or an ODR.
A light-emitting system comprising a plurality of Ga N- based LEDs, each LED comprising: a substrate with front and back sides; an epitaxial layer formed over the front side of the substrate and including, from top down, a P-type layer, a light-emitting area, and an N-type layer; a current spreading layer formed over the P-type layer; a P electrode formed over the current spreading layer; a first reflecting layer between the current spreading layer and the epitaxial layer, disposed at a peripheral area of the epitaxial layer in a band-shaped distribution, and configured to reflect a portion of light emitted upwards from the light-emitting area toward at least two sides of the LED to increase light extraction sideways and thereby improve a light distribution evenness; and 3 U.S. Patent Application Serial No. 14/536,713 Attorney Docket No.: 72626.0014 a second reflecting layer over the back side the substrate.
The system of Claim 11, each LED further comprising a third reflecting layer between the current spreading layer and the P electrode, underneath the P electrode.
The system of Claim 11, wherein the first reflecting layer has a closed annular shape.
The system of Claim 11, wherein the P electrode is disposed at a peripheral area of the current spreading layer, and wherein the first reflecting layer is disposed away from the P electrode.
The system of Claim 11, wherein a width of the first reflecting layer is [[about]] 5-30 pm.
The system of Claim 11, wherein the first reflecting layer has an area of [[about]] 5%-30% of the light-emitting area of the epitaxial layer.
The system of Claim 11, wherein the first reflecting layer comprises one of a DBR, a metal reflecting layer, or an ODR.
The system of Claim 11, wherein the second reflecting layer comprises one of a DBR, a metal reflecting layer, or an ODR.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED
Materials described outside the worked examples.
GaN-based semiconductor (epitaxial layer)
substrate (sapphire or SiC)
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,356,190Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram of a conventional LED. [0025]
FIG. 2 is a diagram of an improved LED structure. [0026]
FIG. 3 is a cross-sectional view of the GaN-based HBLED disclosed in Embodiment 1. [0027]
FIG. 4 is a top view of the GaN-based HBLED disclosed in Embodiment 1. [0028]
FIG. 5 is a cross-sectional view of the GaN-based HBLED disclosed in Embodiment 2. [0029]
FIG. 6 is a top view of the GaN-based HBLED disclosed in Embodiment 2. [0030]
FIG. 7 is a cross-sectional view of the GaN-based HBLED disclosed in Embodiment 3. [0031]
FIG. 8 is a top view of the GaN-based HBLED disclosed in Embodiment 3.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based LED, comprising: a substrate with front and back sides; an epitaxial layer formed over the front side of the substrate and including, from top down, a P-type layer, a light-emitting area, and an N-type layer; a current spreading layer formed over the P-type layer; a P electrode formed over the current spreading layer; a first reflecting layer between the current spreading layer and the epitaxial layer, disposed at a peripheral area of the epitaxial layer in a band-shaped distribution, and configured to reflect a portion of light emitted upward from the light-emitting area toward at least two sides of the LED to increase light extraction sideways and thereby improve a light distribution evenness; and a second reflecting layer over the back side the substrate.
The GaN-based LED of Claim 1, further comprising a third reflecting layer between the current spreading layer and the P electrode, underneath the P electrode.
The GaN-based LED of Claim 1, wherein the first reflecting layer has a closed annular shape.
The GaN-based LED of Claim 1, wherein the P electrode is disposed at a peripheral area of the current spreading layer, and wherein the first reflecting layer is disposed away from the P electrode.
The GaN-based LED of Claim 1, wherein a width of the first reflecting layer is [[about]] 5-30 pm.
The Ga N- based LED of Claim 1, wherein the first reflecting layer has an area of [[about]] 5%-30% of the light-emitting area of the epitaxial layer.
The Ga N- based LED of Claim 1, wherein the first reflecting layer comprises one of a DBR, a metal reflecting layer, or an ODR.
The Ga N- based LED of Claim 1, wherein the second reflecting layer comprises one of a DBR, a metal reflecting layer, or an ODR.
A light-emitting system comprising a plurality of Ga N- based LEDs, each LED comprising: a substrate with front and back sides; an epitaxial layer formed over the front side of the substrate and including, from top down, a P-type layer, a light-emitting area, and an N-type layer; a current spreading layer formed over the P-type layer; a P electrode formed over the current spreading layer; a first reflecting layer between the current spreading layer and the epitaxial layer, disposed at a peripheral area of the epitaxial layer in a band-shaped distribution, and configured to reflect a portion of light emitted upwards from the light-emitting area toward at least two sides of the LED to increase light extraction sideways and thereby improve a light distribution evenness; and 3 U.S. Patent Application Serial No. 14/536,713 Attorney Docket No.: 72626.0014 a second reflecting layer over the back side the substrate.
The system of Claim 11, each LED further comprising a third reflecting layer between the current spreading layer and the P electrode, underneath the P electrode.
The system of Claim 11, wherein the first reflecting layer has a closed annular shape.
The system of Claim 11, wherein the P electrode is disposed at a peripheral area of the current spreading layer, and wherein the first reflecting layer is disposed away from the P electrode.
The system of Claim 11, wherein a width of the first reflecting layer is [[about]] 5-30 pm.
The system of Claim 11, wherein the first reflecting layer has an area of [[about]] 5%-30% of the light-emitting area of the epitaxial layer.
The system of Claim 11, wherein the first reflecting layer comprises one of a DBR, a metal reflecting layer, or an ODR.
The system of Claim 11, wherein the second reflecting layer comprises one of a DBR, a metal reflecting layer, or an ODR.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED
Materials described outside the worked examples.
GaN-based semiconductor (epitaxial layer)
substrate (sapphire or SiC)
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,356,190Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram of a conventional LED. [0025]
FIG. 2 is a diagram of an improved LED structure. [0026]
FIG. 3 is a cross-sectional view of the GaN-based HBLED disclosed in Embodiment 1. [0027]
FIG. 4 is a top view of the GaN-based HBLED disclosed in Embodiment 1. [0028]
FIG. 5 is a cross-sectional view of the GaN-based HBLED disclosed in Embodiment 2. [0029]
FIG. 6 is a top view of the GaN-based HBLED disclosed in Embodiment 2. [0030]
FIG. 7 is a cross-sectional view of the GaN-based HBLED disclosed in Embodiment 3. [0031]
FIG. 8 is a top view of the GaN-based HBLED disclosed in Embodiment 3.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based LED, comprising: a substrate with front and back sides; an epitaxial layer formed over the front side of the substrate and including, from top down, a P-type layer, a light-emitting area, and an N-type layer; a current spreading layer formed over the P-type layer; a P electrode formed over the current spreading layer; a first reflecting layer between the current spreading layer and the epitaxial layer, disposed at a peripheral area of the epitaxial layer in a band-shaped distribution, and configured to reflect a portion of light emitted upward from the light-emitting area toward at least two sides of the LED to increase light extraction sideways and thereby improve a light distribution evenness; and a second reflecting layer over the back side the substrate.
The GaN-based LED of Claim 1, further comprising a third reflecting layer between the current spreading layer and the P electrode, underneath the P electrode.
The GaN-based LED of Claim 1, wherein the first reflecting layer has a closed annular shape.
The GaN-based LED of Claim 1, wherein the P electrode is disposed at a peripheral area of the current spreading layer, and wherein the first reflecting layer is disposed away from the P electrode.
The GaN-based LED of Claim 1, wherein a width of the first reflecting layer is [[about]] 5-30 pm.
The Ga N- based LED of Claim 1, wherein the first reflecting layer has an area of [[about]] 5%-30% of the light-emitting area of the epitaxial layer.
The Ga N- based LED of Claim 1, wherein the first reflecting layer comprises one of a DBR, a metal reflecting layer, or an ODR.
The Ga N- based LED of Claim 1, wherein the second reflecting layer comprises one of a DBR, a metal reflecting layer, or an ODR.
A light-emitting system comprising a plurality of Ga N- based LEDs, each LED comprising: a substrate with front and back sides; an epitaxial layer formed over the front side of the substrate and including, from top down, a P-type layer, a light-emitting area, and an N-type layer; a current spreading layer formed over the P-type layer; a P electrode formed over the current spreading layer; a first reflecting layer between the current spreading layer and the epitaxial layer, disposed at a peripheral area of the epitaxial layer in a band-shaped distribution, and configured to reflect a portion of light emitted upwards from the light-emitting area toward at least two sides of the LED to increase light extraction sideways and thereby improve a light distribution evenness; and 3 U.S. Patent Application Serial No. 14/536,713 Attorney Docket No.: 72626.0014 a second reflecting layer over the back side the substrate.
The system of Claim 11, each LED further comprising a third reflecting layer between the current spreading layer and the P electrode, underneath the P electrode.
The system of Claim 11, wherein the first reflecting layer has a closed annular shape.
The system of Claim 11, wherein the P electrode is disposed at a peripheral area of the current spreading layer, and wherein the first reflecting layer is disposed away from the P electrode.
The system of Claim 11, wherein a width of the first reflecting layer is [[about]] 5-30 pm.
The system of Claim 11, wherein the first reflecting layer has an area of [[about]] 5%-30% of the light-emitting area of the epitaxial layer.
The system of Claim 11, wherein the first reflecting layer comprises one of a DBR, a metal reflecting layer, or an ODR.
The system of Claim 11, wherein the second reflecting layer comprises one of a DBR, a metal reflecting layer, or an ODR.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED
Materials described outside the worked examples.
GaN-based semiconductor (epitaxial layer)
substrate (sapphire or SiC)
Related documents with shared materials, methods, properties, or citations.
light-emitting system of plurality of GaN-based LEDs
current spreading layer
sapphire
Al₂O₃
silicon carbide
SiC
current spreading layer materials (Ni/Au, Ni/ITO, ITO, ZnO, In-mixed ZnO, Al-mixed ZnO, Ga-mixed ZnO)
DBR (distributed Bragg reflector)
metal reflecting layer
ODR (omnidirectional reflector)
high refractive index layer materials (TiO, TiO2, Ti₃O5, Ti₂O3, Ta₂O5, ZrO₂)
low refractive index layer materials (SiO2, SiNx, Al₂O₃)
metal reflecting layer materials (Al, Ag, Ni)
light-emitting system of plurality of GaN-based LEDs
current spreading layer
sapphire
Al₂O₃
silicon carbide
SiC
current spreading layer materials (Ni/Au, Ni/ITO, ITO, ZnO, In-mixed ZnO, Al-mixed ZnO, Ga-mixed ZnO)
DBR (distributed Bragg reflector)
metal reflecting layer
ODR (omnidirectional reflector)
high refractive index layer materials (TiO, TiO2, Ti₃O5, Ti₂O3, Ta₂O5, ZrO₂)
low refractive index layer materials (SiO2, SiNx, Al₂O₃)
metal reflecting layer materials (Al, Ag, Ni)
light-emitting system of plurality of GaN-based LEDs
current spreading layer
sapphire
Al₂O₃
silicon carbide
SiC
current spreading layer materials (Ni/Au, Ni/ITO, ITO, ZnO, In-mixed ZnO, Al-mixed ZnO, Ga-mixed ZnO)
DBR (distributed Bragg reflector)
metal reflecting layer
ODR (omnidirectional reflector)
high refractive index layer materials (TiO, TiO2, Ti₃O5, Ti₂O3, Ta₂O5, ZrO₂)
low refractive index layer materials (SiO2, SiNx, Al₂O₃)
metal reflecting layer materials (Al, Ag, Ni)
light-emitting system of plurality of GaN-based LEDs
current spreading layer
sapphire
Al₂O₃
silicon carbide
SiC
current spreading layer materials (Ni/Au, Ni/ITO, ITO, ZnO, In-mixed ZnO, Al-mixed ZnO, Ga-mixed ZnO)
DBR (distributed Bragg reflector)
metal reflecting layer
ODR (omnidirectional reflector)
high refractive index layer materials (TiO, TiO2, Ti₃O5, Ti₂O3, Ta₂O5, ZrO₂)
low refractive index layer materials (SiO2, SiNx, Al₂O₃)
metal reflecting layer materials (Al, Ag, Ni)