FLEXIBLE GAN LIGHT-EMITTING DIODES

Hoi Wai Choi

Patent

Atlas literature

Patent

US 10,615,222

FLEXIBLE GAN LIGHT-EMITTING DIODES

Hoi Wai Choi

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

6 independent · 24 dependent

1
IndependentGaN-based semiconductorepoxysolventcontinuous-film crystalline flexible free-standing GaN LED
A method of fabricating a continuous-ﬁlm, crystalline, semiconductor, ﬂexible, free-standing light-emitting diode (LED), the method comprising: forming an LED structure on a ﬁrst rigid substrate; attaching the LED structure to a supporting substrate using an adhesive; usin g a selective laser lift-oﬀ (LLO) process through a shadow mask to separate at least a portion of the LED structure from the ﬁrst rigid substrate; and immersing the LED structure in a solvent bath to dissolve the adhesive and separate the LED structure from the rigid supporting substrate; wherein the shadow mask comprises a masked region having low transmission and a transparent unmasked region, wherein the masked region provides coverage over at least one selected region in which the LED structure is on the ﬁrst rigid substrate, and wherein the method further co m prises separating a region of the ﬁrst rigid substrate corresponding to the transparent unmasked region from the LED structure, while a region of the ﬁrst rigid substrate corresponding to the masked region attached on the LED structure remains. Previously presented
1. 2
  Dependent← claim 1Al₂O₃
  The method according to claim 1, wherein the ﬁrst rigid substrate is a sapphire substrate. Original
2. 3
  Dependent← claim 1epoxy
  The method according to claim 1, wherein the adhesive is an epoxy. Original
3. 4
  Dependent← claim 1
  The method according to claim 1, wherein the supporting substrate is rigid. Original
4. 6
  Dependent← claim 1
  (Origina l) The method according to claim 1, wherein the supporting substrate is ﬂexible. Original
5. 8
  Dependent← claim 1GaN-based semiconductorcontinuous-film crystalline flexible free-standing GaN LED
  The method according to claim 1, wherein the LED is a GaN-based semiconductor. Original
6. 10
  Dependent← claim 1epoxy
  The method according to claim 1, wherein attaching the LED structure to the supporting substrate using the adhesive comprises: applying the adhesive to the LED structure; and curing the adhesive to a solid state. Original
7. 11
  Dependent← claim 1
  The method according to claim 1, wherein using the selective LLO process to separate at least a portion of the LED structure from the ﬁrst rigid substrate comprises: passing a high-energy, pulsed-mode laser beam at U V wavelengths through the shadow mask and through the ﬁrst rigid substrate over regions of the LE D structure to be l ift ed-o f f of the ﬁ rst rigid substrate. Previously presented
8. 13
  Dependent← claim 1
  The method according to claim 1, wherein a plurality of LED structures is formed as an array on the ﬁrst rigid substrate so that a plurality of LED strips is formed at once. Original
9. 14
  Dependent← claim 1
  The method according to claim 1, wherein the ﬂexible, free- standing LED structure has a ﬁrst end attached to the ﬁrst rigid substrate and a second end opposite to the ﬁrst end freely suspended, and wherein the method further comprises: providing a second rigid substrate; attaching the freely suspended end to the second rigid substrate; and moving the ﬁrst and second rigid substrates to tune the curvature of the LED structure. Previously presented
10. 15
  Dependent← claim 1
  (P reviously Presented) The method according to claim 1, wherein the ﬂexible, free- standing LED structure has a ﬁrst end attached to the ﬁrst rigid substrate and a second end opposite to the ﬁrst end fre ely suspended, and wherein the method further comprises adjusting the thickness, length, and strain of the LED structure so that it rolls itself into a tube-shaped LED. Previously presented
11. 16
  Dependent← claim 1bowl-shaped micro-LED structure
  1 6. The method according to claim 1 wherein using the selective LLO process to separate at least a portion of the LE D structure from the ﬁrst rigid substrate comprises: selectively lifting oﬀ polygonal or circular shaped mesas; and detaching surrounding regions from the ﬁrst rigid substrate to form a bowl-shaped micro-LED structure. Previously presented
12. 18
  Dependent← claim 1
  T he method according to claim 1, wherein the LED structure is a suspended continuous ﬁlm that bends due to strain in a semiconductor ﬁlm of the LED structure. Original
13. 20
  Dependent← claim 1flexible LED display with 2D array of continuous semiconductor film LED structures
  The method according to claim 1, further comprising attaching multiple ﬂexible LED structures onto a second rigid substrate to form a ﬂexible display, the ﬂexible display comprising: at least one pixel; and a t w o-dimensional array of discrete continuous semiconductor ﬁlm LED structures. Original
17
IndependentGaN-based semiconductorflexible free-standing micro-display panel
(Previously P resented) A method of Ia bricating a continuous-ﬁlm, crystalline, semiconductor, ﬂexible, free-standing light-emitting diode (LED), the method comprising: forming an LED structure on a ﬁrst rigid substrate; attaching the LED structure to a supporting substrate using an adhesive; using a selective laser lift-oﬀ (LlO) process to separate at least a portion of the LED structure from the ﬁrst rigid substrate; and immersing the LED structure in a solvent bath to dissolve the adhesive and separate the LED structure from the rigid supporting substrate, wherein the LED is a GaN-based semiconductor, and wherein forming an LED structure on a ﬁrst rigid substrate comprises: creating emissive micro-pixel arrays at ends of strips that will be freely suspended after the immersing step; and creating a metal contact layer so that individual pixels can be operated independently so as to construct a micro-display panel. Previously presented
19
Independent
1 9. A method of fabricating a continuous-ﬁlm, crystalline, semiconductor, ﬂexible, free-standing light-emitting diode (LE D), the method comprising: forming an LED structure on a ﬁrst rigid substrate; attaching the LED structure to a supporting substrate using an adhesive; using a selective laser lift-oﬀ (LLO) process through a shadow mask to separate at least a portion of the LED structure from the ﬁrst rigid substrate; and immersing the LED structure in a solvent bath to dissolve the adhesive and separate the LED structure from the rigid supporting substrate, wherein the LED structure is attached to at least one additional separate rigid substrate so that a curvature of the LED structure is tunable by adjusting spacing between the rigid substrates, wherein the shadow mask comprises a masked region having low transmission and a transparent unmasked region, wherein the masked region provides coverage over at least one selected region in which the LED structure is on the ﬁrst rigid substrate, and wherein the method further comprises separating a region of the ﬁrst rigid substrate corresponding to the transparent unmasked region from the LED structure, while a region o f the ﬁrst rigid substrate corresponding to the masked region attached on the LED structure remains, Previously presented
22
IndependentGaN-based semiconductorAl₂O₃soft metal layercontinuous-film crystalline flexible free-standing GaN LED
A method of fabricating an inorganic, continuous-ﬁlm, crystalline, semiconductor, ﬂexible LED device without attachment to a substrate, the method comprising: forming a GaN-based LED device from GaN-based LED wafers g rown on sapphire substrates; depositing a soft metal layer onto the GaN-based LED device after forming the GaN-based LED device; and completely detaching the sapphire substrates by complete las e r lift-oﬀ, after depositing the soft metal layer onto the GaN-based LED device, to form the ﬂexible LEDs, wherein the soft metal layer is a ﬂexible support such that the entire LED device is bent. Previously presented
1. 23
  Dependent← claim 22soft metal layer
  The method according to claim 22, wherein the soft metal layer is deposited by electroplating or thermal evaporation. Previously presented
2. 24
  Dependent← claim 22
  The method according to claim 22, wherein the entire LED device is f lexible. Original
3. 25
  Dependent← claim 22GaN-based semiconductorflexible LED display with 2D array of continuous semiconductor film LED structures
  The method according to claim 22, wherein the LED device is a display, and wherein forming the GaN-based LED device from GaN-based LED wafers grown on sapphire substrates comprises f orming a GaN-based LED display from GaN-based LED wafers grown on sapphire substrates. Original
4. 30
  Dependent← claim 22
  The method according to claim 22, further comprising attaching the LED device, after completely detaching the sapphire substrates by complete laser lift-oﬀ, to a surface of a foreign substrate, wherein the LED adopts a shape of the surface of the foreign substrate. New
28
Independentphotonic system with flexible free-standing LED as optical waveguide
A method of fabricating a photonic system, the method comprising the steps of: fabricating a continuous-ﬁlm, crystalline, semiconductor, ﬂexible, free-standing light- emitting diode (LED); attaching one region of the LED to a second rigid substrate; and detaching the remaining regions of the LED from the second rigid substrate to form an optical w aveguide of the photonic system, wherein fabricating the continuous-ﬁlm, crystalline, semiconductor, ﬂexible, free-standing LED co m prises: forming an LED structure on a ﬁrst rigid substrate; attaching the L ED structure to a supporting substrate using an adhesive; usin g a selective laser lift-oﬀ (LLO) process to separate at least a portion of the LED structure from the ﬁrst rigid substrate; and immersing the LED structure in a solvent bath to dissolve the adhesive and separate the LED structure from the rigid supporting substrate. Previously presented
29
Independent
Canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

continuous-film crystalline flexible free-standing GaN LED

Ni/Au current spreading layercurrent spreading layer

p-type GaNp-type layer

GaN-based semiconductoractive layer (multiple quantum wells)

n-type GaNn-type layer

Al₂O₃growth substrate

bowl-shaped micro-LED structure

No layer stack recorded.

Materials

Materials described outside the worked examples.

GaN-based semiconductor

LED Active Material

epoxy

Adhesive/Temporary Bonding Layer

Process steps

Additional fabrication and treatment steps described in the patent.

Mocvd Growth

Step 1

Process details

layers:n-type GaN/multiple quantum well active layer/p-type GaN

substrate:sapphire

technique:MOCVD or MBE

Materials:GaN-based semiconductor

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
—	0.7–3.4 eV	—
—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

FLEXIBLE GAN LIGHT-EMITTING DIODES | Matter42 Literature