Patent
US 9,023,166OF THE INVENTION
Jin Sik CHOI
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,023,166Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart sequentially illustrating a method of transferring graphene in accordance with an exemplary embodiment of the present 20 invention.
FIG. 2 is a cross-sectional view schematically showing a step of forming a graphene layer by composing graphene and a base layer.
FIG. 3 is a cross-sectional view schematically showing a step of depositing a self-assembled monolayer on the graphene layer.
FIG. 4 is a cross-sectional view schematically showing a step of separating a combination layer, including the self-assembled monolayer and the graphene layer, …
FIG. 5 is a cross-sectional view schematically showing a step of 5 transferring the combination layer to a substrate so that the graphene layer is closely …
FIG. 6 is a cross-sectional view schematically showing a step of transferring the combination layer to a substrate so that the self-assembled monolayer is …
FIG. 7 is a cross-sectional view schematically showing a graphene dual junction diode (i.e., a graphene p-i-n junction diode) fabricated using the method of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
WHAT IS CLAIMED IS:
The method of claim 1, wherein the separating of a combination 10 layer comprising the self-assembled monolayer and the graphene layer from the base layer comprises separating the combination layer from the base layer with an etchant using the self-assembled monolayer as a support surface.
The method of claim 1, further comprising: 15 transferring the combination layer to a substrate after separating the combination layer comprising the self-assembled monolayer and the graphene layer from the base layer.
The method of claim 1, wherein the base layer is a copper (Cu) foil. 14
Layer stacks claimed or described, ordered top of device to substrate.
graphene dual junction diode (graphene p-i-n junction diode)
Materials described outside the worked examples.
graphene
self-assembled monolayer (SAM)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,023,166Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart sequentially illustrating a method of transferring graphene in accordance with an exemplary embodiment of the present 20 invention.
FIG. 2 is a cross-sectional view schematically showing a step of forming a graphene layer by composing graphene and a base layer.
FIG. 3 is a cross-sectional view schematically showing a step of depositing a self-assembled monolayer on the graphene layer.
FIG. 4 is a cross-sectional view schematically showing a step of separating a combination layer, including the self-assembled monolayer and the graphene layer, …
FIG. 5 is a cross-sectional view schematically showing a step of 5 transferring the combination layer to a substrate so that the graphene layer is closely …
FIG. 6 is a cross-sectional view schematically showing a step of transferring the combination layer to a substrate so that the self-assembled monolayer is …
FIG. 7 is a cross-sectional view schematically showing a graphene dual junction diode (i.e., a graphene p-i-n junction diode) fabricated using the method of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
WHAT IS CLAIMED IS:
The method of claim 1, wherein the separating of a combination 10 layer comprising the self-assembled monolayer and the graphene layer from the base layer comprises separating the combination layer from the base layer with an etchant using the self-assembled monolayer as a support surface.
The method of claim 1, further comprising: 15 transferring the combination layer to a substrate after separating the combination layer comprising the self-assembled monolayer and the graphene layer from the base layer.
The method of claim 1, wherein the base layer is a copper (Cu) foil. 14
Layer stacks claimed or described, ordered top of device to substrate.
graphene dual junction diode (graphene p-i-n junction diode)
Materials described outside the worked examples.
graphene
self-assembled monolayer (SAM)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,023,166Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart sequentially illustrating a method of transferring graphene in accordance with an exemplary embodiment of the present 20 invention.
FIG. 2 is a cross-sectional view schematically showing a step of forming a graphene layer by composing graphene and a base layer.
FIG. 3 is a cross-sectional view schematically showing a step of depositing a self-assembled monolayer on the graphene layer.
FIG. 4 is a cross-sectional view schematically showing a step of separating a combination layer, including the self-assembled monolayer and the graphene layer, …
FIG. 5 is a cross-sectional view schematically showing a step of 5 transferring the combination layer to a substrate so that the graphene layer is closely …
FIG. 6 is a cross-sectional view schematically showing a step of transferring the combination layer to a substrate so that the self-assembled monolayer is …
FIG. 7 is a cross-sectional view schematically showing a graphene dual junction diode (i.e., a graphene p-i-n junction diode) fabricated using the method of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
WHAT IS CLAIMED IS:
The method of claim 1, wherein the separating of a combination 10 layer comprising the self-assembled monolayer and the graphene layer from the base layer comprises separating the combination layer from the base layer with an etchant using the self-assembled monolayer as a support surface.
The method of claim 1, further comprising: 15 transferring the combination layer to a substrate after separating the combination layer comprising the self-assembled monolayer and the graphene layer from the base layer.
The method of claim 1, wherein the base layer is a copper (Cu) foil. 14
Layer stacks claimed or described, ordered top of device to substrate.
graphene dual junction diode (graphene p-i-n junction diode)
Materials described outside the worked examples.
graphene
self-assembled monolayer (SAM)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,023,166Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart sequentially illustrating a method of transferring graphene in accordance with an exemplary embodiment of the present 20 invention.
FIG. 2 is a cross-sectional view schematically showing a step of forming a graphene layer by composing graphene and a base layer.
FIG. 3 is a cross-sectional view schematically showing a step of depositing a self-assembled monolayer on the graphene layer.
FIG. 4 is a cross-sectional view schematically showing a step of separating a combination layer, including the self-assembled monolayer and the graphene layer, …
FIG. 5 is a cross-sectional view schematically showing a step of 5 transferring the combination layer to a substrate so that the graphene layer is closely …
FIG. 6 is a cross-sectional view schematically showing a step of transferring the combination layer to a substrate so that the self-assembled monolayer is …
FIG. 7 is a cross-sectional view schematically showing a graphene dual junction diode (i.e., a graphene p-i-n junction diode) fabricated using the method of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
WHAT IS CLAIMED IS:
The method of claim 1, wherein the separating of a combination 10 layer comprising the self-assembled monolayer and the graphene layer from the base layer comprises separating the combination layer from the base layer with an etchant using the self-assembled monolayer as a support surface.
The method of claim 1, further comprising: 15 transferring the combination layer to a substrate after separating the combination layer comprising the self-assembled monolayer and the graphene layer from the base layer.
The method of claim 1, wherein the base layer is a copper (Cu) foil. 14
Layer stacks claimed or described, ordered top of device to substrate.
graphene dual junction diode (graphene p-i-n junction diode)
Materials described outside the worked examples.
graphene
self-assembled monolayer (SAM)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
copper foil
Cu
n-type SAM (NH₂+ group)
p-type SAM (F₄-TCNQ)
polyethylene terephthalate (PET)
polycarbonate (PC)
polystyrene (PS)
polyimide
silicon oxide substrate
SiO₂
Methods of manufacturing and transferring larger-sized graphene
copper foil
Cu
n-type SAM (NH₂+ group)
p-type SAM (F₄-TCNQ)
polyethylene terephthalate (PET)
polycarbonate (PC)
polystyrene (PS)
polyimide
silicon oxide substrate
SiO₂
Methods of manufacturing and transferring larger-sized graphene
copper foil
Cu
n-type SAM (NH₂+ group)
p-type SAM (F₄-TCNQ)
polyethylene terephthalate (PET)
polycarbonate (PC)
polystyrene (PS)
polyimide
silicon oxide substrate
SiO₂
Methods of manufacturing and transferring larger-sized graphene
copper foil
Cu
n-type SAM (NH₂+ group)
p-type SAM (F₄-TCNQ)
polyethylene terephthalate (PET)
polycarbonate (PC)
polystyrene (PS)
polyimide
silicon oxide substrate
SiO₂
Methods of manufacturing and transferring larger-sized graphene