Patent
US 8,946,903electrical interconnect (nested laminate in trench)
copper
Cu
nickel
Ni
silicon carbide
SiC
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
GRAPHENE GROWN SUBSTRATE AND ELECTRONIC/PHOTONIC INTEGRATED CIRCUITS USING SAME
electrical interconnect (nested laminate in trench)
copper
Cu
nickel
Ni
silicon carbide
SiC
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
GRAPHENE GROWN SUBSTRATE AND ELECTRONIC/PHOTONIC INTEGRATED CIRCUITS USING SAME
electrical interconnect (nested laminate in trench)
copper
Cu
nickel
Ni
silicon carbide
SiC
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
GRAPHENE GROWN SUBSTRATE AND ELECTRONIC/PHOTONIC INTEGRATED CIRCUITS USING SAME
electrical interconnect (nested laminate in trench)
copper
Cu
nickel
Ni
silicon carbide
SiC
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
GRAPHENE GROWN SUBSTRATE AND ELECTRONIC/PHOTONIC INTEGRATED CIRCUITS USING SAME