Patent
US 9,834,855METHOD FOR MANUFACTURING MONOCRYSTALLINE GRAPHENE
Chanyong HWANG
US
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US 9,834,855Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 3, the method of producing the monocrystalline graphene layer, according to an embodiment of the present invention includes forming polycrystalline …
FIGS. 2 and 3 are sequential cross-sectional views for describing the method of producing the monocrystalline graphene layer, according to an embodiment of the …
FIG. 4 is a flowchart of a recrystallizing process in the method of producing the monocrystalline graphene layer, according to an embodiment of the present …
FIGS. 5 and 6 are sequential plan views for describing the recrystallizing process in the method of producing the monocrystalline graphene layer, according to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing monocrystalline graphene, the method comprising: forming polycrystalline graphene on a substrate using a hydrocarbon gas; forming a catalyst on the polycrystalline graphene; and recrystallizing the polycrystalline graphene into monocrystalline graphene by heat- treating the polycrystalline graphene and the catalyst.
The method of claim 1, wherein the substrate is an insulating substrate comprising A 12O 3, A l N, Si₃N4, SrTi O 3, or BN.
The method of claim 1, wherein the substrate is a metal substrate comprising tungsten (W) or molybdenum (Mo).
The method of claim 1, wherein the substrate comprises a wafer-scale substrate.
The method of claim 1, wherein the forming of the polycrystalline graphene on the substrate using the hydrocarbon gas is performed at a temperature of 600 ° C to 1 100 °C.
The method of claim 1, wherein the catalyst comprises aluminum (Al), an Al-containing compound, or a 3d transition metal compound.
The method of claim 1, wherein the heat-treating polycrystalline graphene and the catalyst using a source to another location to cool the first part and
Materials described outside the worked examples.
monocrystalline graphene
polycrystalline graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1100 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,834,855Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 3, the method of producing the monocrystalline graphene layer, according to an embodiment of the present invention includes forming polycrystalline …
FIGS. 2 and 3 are sequential cross-sectional views for describing the method of producing the monocrystalline graphene layer, according to an embodiment of the …
FIG. 4 is a flowchart of a recrystallizing process in the method of producing the monocrystalline graphene layer, according to an embodiment of the present …
FIGS. 5 and 6 are sequential plan views for describing the recrystallizing process in the method of producing the monocrystalline graphene layer, according to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing monocrystalline graphene, the method comprising: forming polycrystalline graphene on a substrate using a hydrocarbon gas; forming a catalyst on the polycrystalline graphene; and recrystallizing the polycrystalline graphene into monocrystalline graphene by heat- treating the polycrystalline graphene and the catalyst.
The method of claim 1, wherein the substrate is an insulating substrate comprising A 12O 3, A l N, Si₃N4, SrTi O 3, or BN.
The method of claim 1, wherein the substrate is a metal substrate comprising tungsten (W) or molybdenum (Mo).
The method of claim 1, wherein the substrate comprises a wafer-scale substrate.
The method of claim 1, wherein the forming of the polycrystalline graphene on the substrate using the hydrocarbon gas is performed at a temperature of 600 ° C to 1 100 °C.
The method of claim 1, wherein the catalyst comprises aluminum (Al), an Al-containing compound, or a 3d transition metal compound.
The method of claim 1, wherein the heat-treating polycrystalline graphene and the catalyst using a source to another location to cool the first part and
Materials described outside the worked examples.
monocrystalline graphene
polycrystalline graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1100 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,834,855Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 3, the method of producing the monocrystalline graphene layer, according to an embodiment of the present invention includes forming polycrystalline …
FIGS. 2 and 3 are sequential cross-sectional views for describing the method of producing the monocrystalline graphene layer, according to an embodiment of the …
FIG. 4 is a flowchart of a recrystallizing process in the method of producing the monocrystalline graphene layer, according to an embodiment of the present …
FIGS. 5 and 6 are sequential plan views for describing the recrystallizing process in the method of producing the monocrystalline graphene layer, according to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing monocrystalline graphene, the method comprising: forming polycrystalline graphene on a substrate using a hydrocarbon gas; forming a catalyst on the polycrystalline graphene; and recrystallizing the polycrystalline graphene into monocrystalline graphene by heat- treating the polycrystalline graphene and the catalyst.
The method of claim 1, wherein the substrate is an insulating substrate comprising A 12O 3, A l N, Si₃N4, SrTi O 3, or BN.
The method of claim 1, wherein the substrate is a metal substrate comprising tungsten (W) or molybdenum (Mo).
The method of claim 1, wherein the substrate comprises a wafer-scale substrate.
The method of claim 1, wherein the forming of the polycrystalline graphene on the substrate using the hydrocarbon gas is performed at a temperature of 600 ° C to 1 100 °C.
The method of claim 1, wherein the catalyst comprises aluminum (Al), an Al-containing compound, or a 3d transition metal compound.
The method of claim 1, wherein the heat-treating polycrystalline graphene and the catalyst using a source to another location to cool the first part and
Materials described outside the worked examples.
monocrystalline graphene
polycrystalline graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1100 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,834,855Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 3, the method of producing the monocrystalline graphene layer, according to an embodiment of the present invention includes forming polycrystalline …
FIGS. 2 and 3 are sequential cross-sectional views for describing the method of producing the monocrystalline graphene layer, according to an embodiment of the …
FIG. 4 is a flowchart of a recrystallizing process in the method of producing the monocrystalline graphene layer, according to an embodiment of the present …
FIGS. 5 and 6 are sequential plan views for describing the recrystallizing process in the method of producing the monocrystalline graphene layer, according to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing monocrystalline graphene, the method comprising: forming polycrystalline graphene on a substrate using a hydrocarbon gas; forming a catalyst on the polycrystalline graphene; and recrystallizing the polycrystalline graphene into monocrystalline graphene by heat- treating the polycrystalline graphene and the catalyst.
The method of claim 1, wherein the substrate is an insulating substrate comprising A 12O 3, A l N, Si₃N4, SrTi O 3, or BN.
The method of claim 1, wherein the substrate is a metal substrate comprising tungsten (W) or molybdenum (Mo).
The method of claim 1, wherein the substrate comprises a wafer-scale substrate.
The method of claim 1, wherein the forming of the polycrystalline graphene on the substrate using the hydrocarbon gas is performed at a temperature of 600 ° C to 1 100 °C.
The method of claim 1, wherein the catalyst comprises aluminum (Al), an Al-containing compound, or a 3d transition metal compound.
The method of claim 1, wherein the heat-treating polycrystalline graphene and the catalyst using a source to another location to cool the first part and
Materials described outside the worked examples.
monocrystalline graphene
polycrystalline graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1100 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
catalyst
aluminum
Al
Al-containing compound
3d transition metal compound
alumina
Al₂O₃
aluminum nitride
AlN
silicon nitride
Si₃N₄
strontium titanate
SrTiO₃
boron nitride
BN
transition metal thin layer (Cu or Ni)
tungsten
W
molybdenum
Mo
hydrocarbon gas
| — |
Temperature | 400–2000 °C | — |
Temperature | 1400–2000 K | — |
Temperature | ≥ 2500 K | — |
catalyst
aluminum
Al
Al-containing compound
3d transition metal compound
alumina
Al₂O₃
aluminum nitride
AlN
silicon nitride
Si₃N₄
strontium titanate
SrTiO₃
boron nitride
BN
transition metal thin layer (Cu or Ni)
tungsten
W
molybdenum
Mo
hydrocarbon gas
| — |
Temperature | 400–2000 °C | — |
Temperature | 1400–2000 K | — |
Temperature | ≥ 2500 K | — |
catalyst
aluminum
Al
Al-containing compound
3d transition metal compound
alumina
Al₂O₃
aluminum nitride
AlN
silicon nitride
Si₃N₄
strontium titanate
SrTiO₃
boron nitride
BN
transition metal thin layer (Cu or Ni)
tungsten
W
molybdenum
Mo
hydrocarbon gas
| — |
Temperature | 400–2000 °C | — |
Temperature | 1400–2000 K | — |
Temperature | ≥ 2500 K | — |
catalyst
aluminum
Al
Al-containing compound
3d transition metal compound
alumina
Al₂O₃
aluminum nitride
AlN
silicon nitride
Si₃N₄
strontium titanate
SrTiO₃
boron nitride
BN
transition metal thin layer (Cu or Ni)
tungsten
W
molybdenum
Mo
hydrocarbon gas
| — |
Temperature | 400–2000 °C | — |
Temperature | 1400–2000 K | — |
Temperature | ≥ 2500 K | — |