Patent
US 8,410,474OF THE INVENTION
Makoto Okai
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,410,474Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A substrate having a graphene film grown thereon, comprising: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having a composition of A l2 x03+x (where x is 0 or more) a desired circuit pattern of the p atterned aluminum oxide film being formed on the base substrate, no aluminum oxide film bein g dis p osed on the base substrate in re ions other than the desired circuit p attern; and a graphene film preferentially grown directly and only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the patterned aluminum oxide film, the graphene film consistin g of a p lura li t y of graphene domains havin g an average size from 25 to 41 nm, the graphene film having an electrical conductivity of 1 x 104 S/cm or more measured by a four-probe resistive method using an intervoltage- probe distance of 0.2 mm.
The substrate according to claim 1, wherein a distance between a surface atomic layer of the patterned aluminum oxide film and an atomic layer of the graphene film adjacent to the surface atomic layer of the patterned aluminum oxide -2- Docket No. 520.51366X00 Application No. 13/010,075 film is 0.34 nm or less.
The substrate according to claim 1, wherein an arithmetic mean surface roughness Ra of the patterned aluminum oxide film is 1 nm or less.
The substrate according to claim 1, wherein a maximum surface height Rz of the patterned aluminum oxide film is 10 nm or less.
The substrate according to claim 1, wherein an average thickness of the patterned aluminum oxide film is from 10 to 500 nm.
The substrate according to claim 1, wherein the base substrate is a single crystalline silicon substrate having a silicon oxide film formed thereon.
The substrate according to claim 1, wherein an area of the substrate is 20 cm2 or more.
An electronic-photonic integrated circuit formed on the substrate -3- Docket No. 520.51366X00 Application No. 13/010,075 according to claim 1.
The substrate according to claim 1, wherein the plurality of -5- Docket No. 520.51366X00 Application No. 13/010,075 graphene domains have an average size from to 41 nm.
canceled
A fabrication method for a substrate having a graphene film grown thereon, the fabrication method comprising: a substrate preparation step including: using, as a base substrate, a single crystalline silicon substrate having a silicon oxide film formed thereon; and forming, on at least one main surface of the base substrate, an aluminum oxide film having a composition of A l2 x03+x (where x is 0 or more); a circuit patterning step of forming a desired circuit pattern in the aluminum oxide film; and a graphene film formation step of preferentially growing a graphene film only on the circuit pattern by a chemical vapor deposition method using a carbon compound as a precursor, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the aluminum oxide film. withdrawn
The fabrication method according to claim 13, wherein the circuit patterning step is conducted using reactive ion etching with CHF₃ gas. withdrawn
The fabrication method according to claim 13 further -4- Docket No. 520.51366X00 Application No. 13/010,075 comprising, before the graphene film formation step, a surface smoothing step of smoothing the surface of the aluminum oxide film so that an arithmetic mean surface roughness Ra of the aluminum oxide film becomes 1 nm or less. withdrawn
The fabrication method according to claim 13, wherein the chemical vapor deposition method in the graphene film forming step is conducted using acetylene, propylene or methane as a precursor in a non-oxidizing atmosphere at 750 to 1000 0C for 0.1 to 10 m in. withdrawn
A substrate having a graphene film grown thereon, comprising: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having a composition of A l2 x03+x (where x is 0 or more), a desired circuit pattern of the patterned aluminum oxide film being formed on the base substrate, no aluminum oxide film being disposed on the base substrate in regions other than the desired circuit pattern; and a graphene film preferentially grown directly and only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the patterned aluminum oxide film, the graphene film consisting of a plurality of graphene domains having an average size from 25 to 41 nm, the plurality of graphene domains being electrically connected with one another, the graphene film having an electrical conductivity of 1 x 1 04 S/cm or more through the plurality of graphene domains.
The substrate according to claim 17, wherein the plurality of graphene domains have an average size from 30 to 41 nm.
Layer stacks claimed or described, ordered top of device to substrate.
substrate with patterned graphene film
electronic-photonic integrated circuit
Materials described outside the worked examples.
graphene film
C
patterned aluminum oxide film
Al₂-xO₃+x
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical conductivity of graphene film (four-probe resistive method, inter-voltage-probe distance 0.2 mm) | ≥ 10000 S/cm | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,410,474Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A substrate having a graphene film grown thereon, comprising: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having a composition of A l2 x03+x (where x is 0 or more) a desired circuit pattern of the p atterned aluminum oxide film being formed on the base substrate, no aluminum oxide film bein g dis p osed on the base substrate in re ions other than the desired circuit p attern; and a graphene film preferentially grown directly and only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the patterned aluminum oxide film, the graphene film consistin g of a p lura li t y of graphene domains havin g an average size from 25 to 41 nm, the graphene film having an electrical conductivity of 1 x 104 S/cm or more measured by a four-probe resistive method using an intervoltage- probe distance of 0.2 mm.
The substrate according to claim 1, wherein a distance between a surface atomic layer of the patterned aluminum oxide film and an atomic layer of the graphene film adjacent to the surface atomic layer of the patterned aluminum oxide -2- Docket No. 520.51366X00 Application No. 13/010,075 film is 0.34 nm or less.
The substrate according to claim 1, wherein an arithmetic mean surface roughness Ra of the patterned aluminum oxide film is 1 nm or less.
The substrate according to claim 1, wherein a maximum surface height Rz of the patterned aluminum oxide film is 10 nm or less.
The substrate according to claim 1, wherein an average thickness of the patterned aluminum oxide film is from 10 to 500 nm.
The substrate according to claim 1, wherein the base substrate is a single crystalline silicon substrate having a silicon oxide film formed thereon.
The substrate according to claim 1, wherein an area of the substrate is 20 cm2 or more.
An electronic-photonic integrated circuit formed on the substrate -3- Docket No. 520.51366X00 Application No. 13/010,075 according to claim 1.
The substrate according to claim 1, wherein the plurality of -5- Docket No. 520.51366X00 Application No. 13/010,075 graphene domains have an average size from to 41 nm.
canceled
A fabrication method for a substrate having a graphene film grown thereon, the fabrication method comprising: a substrate preparation step including: using, as a base substrate, a single crystalline silicon substrate having a silicon oxide film formed thereon; and forming, on at least one main surface of the base substrate, an aluminum oxide film having a composition of A l2 x03+x (where x is 0 or more); a circuit patterning step of forming a desired circuit pattern in the aluminum oxide film; and a graphene film formation step of preferentially growing a graphene film only on the circuit pattern by a chemical vapor deposition method using a carbon compound as a precursor, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the aluminum oxide film. withdrawn
The fabrication method according to claim 13, wherein the circuit patterning step is conducted using reactive ion etching with CHF₃ gas. withdrawn
The fabrication method according to claim 13 further -4- Docket No. 520.51366X00 Application No. 13/010,075 comprising, before the graphene film formation step, a surface smoothing step of smoothing the surface of the aluminum oxide film so that an arithmetic mean surface roughness Ra of the aluminum oxide film becomes 1 nm or less. withdrawn
The fabrication method according to claim 13, wherein the chemical vapor deposition method in the graphene film forming step is conducted using acetylene, propylene or methane as a precursor in a non-oxidizing atmosphere at 750 to 1000 0C for 0.1 to 10 m in. withdrawn
A substrate having a graphene film grown thereon, comprising: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having a composition of A l2 x03+x (where x is 0 or more), a desired circuit pattern of the patterned aluminum oxide film being formed on the base substrate, no aluminum oxide film being disposed on the base substrate in regions other than the desired circuit pattern; and a graphene film preferentially grown directly and only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the patterned aluminum oxide film, the graphene film consisting of a plurality of graphene domains having an average size from 25 to 41 nm, the plurality of graphene domains being electrically connected with one another, the graphene film having an electrical conductivity of 1 x 1 04 S/cm or more through the plurality of graphene domains.
The substrate according to claim 17, wherein the plurality of graphene domains have an average size from 30 to 41 nm.
Layer stacks claimed or described, ordered top of device to substrate.
substrate with patterned graphene film
electronic-photonic integrated circuit
Materials described outside the worked examples.
graphene film
C
patterned aluminum oxide film
Al₂-xO₃+x
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical conductivity of graphene film (four-probe resistive method, inter-voltage-probe distance 0.2 mm) | ≥ 10000 S/cm | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,410,474Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A substrate having a graphene film grown thereon, comprising: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having a composition of A l2 x03+x (where x is 0 or more) a desired circuit pattern of the p atterned aluminum oxide film being formed on the base substrate, no aluminum oxide film bein g dis p osed on the base substrate in re ions other than the desired circuit p attern; and a graphene film preferentially grown directly and only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the patterned aluminum oxide film, the graphene film consistin g of a p lura li t y of graphene domains havin g an average size from 25 to 41 nm, the graphene film having an electrical conductivity of 1 x 104 S/cm or more measured by a four-probe resistive method using an intervoltage- probe distance of 0.2 mm.
The substrate according to claim 1, wherein a distance between a surface atomic layer of the patterned aluminum oxide film and an atomic layer of the graphene film adjacent to the surface atomic layer of the patterned aluminum oxide -2- Docket No. 520.51366X00 Application No. 13/010,075 film is 0.34 nm or less.
The substrate according to claim 1, wherein an arithmetic mean surface roughness Ra of the patterned aluminum oxide film is 1 nm or less.
The substrate according to claim 1, wherein a maximum surface height Rz of the patterned aluminum oxide film is 10 nm or less.
The substrate according to claim 1, wherein an average thickness of the patterned aluminum oxide film is from 10 to 500 nm.
The substrate according to claim 1, wherein the base substrate is a single crystalline silicon substrate having a silicon oxide film formed thereon.
The substrate according to claim 1, wherein an area of the substrate is 20 cm2 or more.
An electronic-photonic integrated circuit formed on the substrate -3- Docket No. 520.51366X00 Application No. 13/010,075 according to claim 1.
The substrate according to claim 1, wherein the plurality of -5- Docket No. 520.51366X00 Application No. 13/010,075 graphene domains have an average size from to 41 nm.
canceled
A fabrication method for a substrate having a graphene film grown thereon, the fabrication method comprising: a substrate preparation step including: using, as a base substrate, a single crystalline silicon substrate having a silicon oxide film formed thereon; and forming, on at least one main surface of the base substrate, an aluminum oxide film having a composition of A l2 x03+x (where x is 0 or more); a circuit patterning step of forming a desired circuit pattern in the aluminum oxide film; and a graphene film formation step of preferentially growing a graphene film only on the circuit pattern by a chemical vapor deposition method using a carbon compound as a precursor, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the aluminum oxide film. withdrawn
The fabrication method according to claim 13, wherein the circuit patterning step is conducted using reactive ion etching with CHF₃ gas. withdrawn
The fabrication method according to claim 13 further -4- Docket No. 520.51366X00 Application No. 13/010,075 comprising, before the graphene film formation step, a surface smoothing step of smoothing the surface of the aluminum oxide film so that an arithmetic mean surface roughness Ra of the aluminum oxide film becomes 1 nm or less. withdrawn
The fabrication method according to claim 13, wherein the chemical vapor deposition method in the graphene film forming step is conducted using acetylene, propylene or methane as a precursor in a non-oxidizing atmosphere at 750 to 1000 0C for 0.1 to 10 m in. withdrawn
A substrate having a graphene film grown thereon, comprising: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having a composition of A l2 x03+x (where x is 0 or more), a desired circuit pattern of the patterned aluminum oxide film being formed on the base substrate, no aluminum oxide film being disposed on the base substrate in regions other than the desired circuit pattern; and a graphene film preferentially grown directly and only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the patterned aluminum oxide film, the graphene film consisting of a plurality of graphene domains having an average size from 25 to 41 nm, the plurality of graphene domains being electrically connected with one another, the graphene film having an electrical conductivity of 1 x 1 04 S/cm or more through the plurality of graphene domains.
The substrate according to claim 17, wherein the plurality of graphene domains have an average size from 30 to 41 nm.
Layer stacks claimed or described, ordered top of device to substrate.
substrate with patterned graphene film
electronic-photonic integrated circuit
Materials described outside the worked examples.
graphene film
C
patterned aluminum oxide film
Al₂-xO₃+x
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical conductivity of graphene film (four-probe resistive method, inter-voltage-probe distance 0.2 mm) | ≥ 10000 S/cm | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,410,474Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A substrate having a graphene film grown thereon, comprising: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having a composition of A l2 x03+x (where x is 0 or more) a desired circuit pattern of the p atterned aluminum oxide film being formed on the base substrate, no aluminum oxide film bein g dis p osed on the base substrate in re ions other than the desired circuit p attern; and a graphene film preferentially grown directly and only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the patterned aluminum oxide film, the graphene film consistin g of a p lura li t y of graphene domains havin g an average size from 25 to 41 nm, the graphene film having an electrical conductivity of 1 x 104 S/cm or more measured by a four-probe resistive method using an intervoltage- probe distance of 0.2 mm.
The substrate according to claim 1, wherein a distance between a surface atomic layer of the patterned aluminum oxide film and an atomic layer of the graphene film adjacent to the surface atomic layer of the patterned aluminum oxide -2- Docket No. 520.51366X00 Application No. 13/010,075 film is 0.34 nm or less.
The substrate according to claim 1, wherein an arithmetic mean surface roughness Ra of the patterned aluminum oxide film is 1 nm or less.
The substrate according to claim 1, wherein a maximum surface height Rz of the patterned aluminum oxide film is 10 nm or less.
The substrate according to claim 1, wherein an average thickness of the patterned aluminum oxide film is from 10 to 500 nm.
The substrate according to claim 1, wherein the base substrate is a single crystalline silicon substrate having a silicon oxide film formed thereon.
The substrate according to claim 1, wherein an area of the substrate is 20 cm2 or more.
An electronic-photonic integrated circuit formed on the substrate -3- Docket No. 520.51366X00 Application No. 13/010,075 according to claim 1.
The substrate according to claim 1, wherein the plurality of -5- Docket No. 520.51366X00 Application No. 13/010,075 graphene domains have an average size from to 41 nm.
canceled
A fabrication method for a substrate having a graphene film grown thereon, the fabrication method comprising: a substrate preparation step including: using, as a base substrate, a single crystalline silicon substrate having a silicon oxide film formed thereon; and forming, on at least one main surface of the base substrate, an aluminum oxide film having a composition of A l2 x03+x (where x is 0 or more); a circuit patterning step of forming a desired circuit pattern in the aluminum oxide film; and a graphene film formation step of preferentially growing a graphene film only on the circuit pattern by a chemical vapor deposition method using a carbon compound as a precursor, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the aluminum oxide film. withdrawn
The fabrication method according to claim 13, wherein the circuit patterning step is conducted using reactive ion etching with CHF₃ gas. withdrawn
The fabrication method according to claim 13 further -4- Docket No. 520.51366X00 Application No. 13/010,075 comprising, before the graphene film formation step, a surface smoothing step of smoothing the surface of the aluminum oxide film so that an arithmetic mean surface roughness Ra of the aluminum oxide film becomes 1 nm or less. withdrawn
The fabrication method according to claim 13, wherein the chemical vapor deposition method in the graphene film forming step is conducted using acetylene, propylene or methane as a precursor in a non-oxidizing atmosphere at 750 to 1000 0C for 0.1 to 10 m in. withdrawn
A substrate having a graphene film grown thereon, comprising: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having a composition of A l2 x03+x (where x is 0 or more), a desired circuit pattern of the patterned aluminum oxide film being formed on the base substrate, no aluminum oxide film being disposed on the base substrate in regions other than the desired circuit pattern; and a graphene film preferentially grown directly and only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the patterned aluminum oxide film, the graphene film consisting of a plurality of graphene domains having an average size from 25 to 41 nm, the plurality of graphene domains being electrically connected with one another, the graphene film having an electrical conductivity of 1 x 1 04 S/cm or more through the plurality of graphene domains.
The substrate according to claim 17, wherein the plurality of graphene domains have an average size from 30 to 41 nm.
Layer stacks claimed or described, ordered top of device to substrate.
substrate with patterned graphene film
electronic-photonic integrated circuit
Materials described outside the worked examples.
graphene film
C
patterned aluminum oxide film
Al₂-xO₃+x
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electrical conductivity of graphene film (four-probe resistive method, inter-voltage-probe distance 0.2 mm) | ≥ 10000 S/cm | C |
Related documents with shared materials, methods, properties, or citations.
field effect transistor with graphene channel
single crystalline silicon substrate
Si
silicon oxide film
SiO₂
carbon compound precursor (acetylene, propylene or methane)
average graphene domain size |
| 25–41 nm |
C |
Thickness | 1800–1900 nm | — |
Thickness | 400–2000 nm | — |
Thickness | 20–300 nm | — |
Thickness | 0.3–0.34 nm | — |
Thickness | ≤ 10 nm | — |
Pressure | ≤ 20 pA | — |
Pressure | ≤ 5 pA | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | 10–500 nm | — |
Thickness | 30–41 nm | — |
SEMICONDUCTOR DEVICE WITH GRAPHENE LAYER AS CHANNEL
field effect transistor with graphene channel
single crystalline silicon substrate
Si
silicon oxide film
SiO₂
carbon compound precursor (acetylene, propylene or methane)
average graphene domain size |
| 25–41 nm |
C |
Thickness | 1800–1900 nm | — |
Thickness | 400–2000 nm | — |
Thickness | 20–300 nm | — |
Thickness | 0.3–0.34 nm | — |
Thickness | ≤ 10 nm | — |
Pressure | ≤ 20 pA | — |
Pressure | ≤ 5 pA | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | 10–500 nm | — |
Thickness | 30–41 nm | — |
SEMICONDUCTOR DEVICE WITH GRAPHENE LAYER AS CHANNEL
field effect transistor with graphene channel
single crystalline silicon substrate
Si
silicon oxide film
SiO₂
carbon compound precursor (acetylene, propylene or methane)
average graphene domain size |
| 25–41 nm |
C |
Thickness | 1800–1900 nm | — |
Thickness | 400–2000 nm | — |
Thickness | 20–300 nm | — |
Thickness | 0.3–0.34 nm | — |
Thickness | ≤ 10 nm | — |
Pressure | ≤ 20 pA | — |
Pressure | ≤ 5 pA | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | 10–500 nm | — |
Thickness | 30–41 nm | — |
SEMICONDUCTOR DEVICE WITH GRAPHENE LAYER AS CHANNEL
field effect transistor with graphene channel
single crystalline silicon substrate
Si
silicon oxide film
SiO₂
carbon compound precursor (acetylene, propylene or methane)
average graphene domain size |
| 25–41 nm |
C |
Thickness | 1800–1900 nm | — |
Thickness | 400–2000 nm | — |
Thickness | 20–300 nm | — |
Thickness | 0.3–0.34 nm | — |
Thickness | ≤ 10 nm | — |
Pressure | ≤ 20 pA | — |
Pressure | ≤ 5 pA | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | 10–500 nm | — |
Thickness | 30–41 nm | — |