METHOD FOR MANUFACTURING A GAN TYPE LIGHT-EMITTING DIODE

Matthew CHARLES

Patent

Atlas literature

Patent

US 10,923,620

METHOD FOR MANUFACTURING A GAN TYPE LIGHT-EMITTING DIODE

Matthew CHARLES

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

14 independent · 3 dependent

1
Independent
-15. Canceled
15
Independent
Canceled
16
Independentfirst GaN alloy layer (P-doped with magnesium)sacrificial GaN alloy layersecond N-type doped GaN alloy layerGaN-type light-emitting diode with tunnel junction
(Ne w) A method for manufactu rn g a light-emitting diode, comprising the following steps in succession, xv hile maintaining a substrate i nl a vapour-p he ase epitaxial 2roxvi th chamber: epitaxial deposition, xv ith an atmosp l ere having a ﬁrst non1 -zero concentration of auuioia n he vapour-p he ase epitaxial growth cabrofaistGN alloy la v er P- doe with mlag nesi umn: epitaxial deposition. on the ﬁrst Gi aN alloy la ver, of a sacriﬁcial G aN alloy layer in a second atmosphere in the vapour-p he ase epitaxial growth chamber that is not supplied xv ith magnesiu ml: placing the second atmosphere inside the v apo lu-phe ase epitaxial gro xv th chamber under conditions xv ith a second concentration of an un onia that is at least equal to a third of the ﬁrst non-zero concentration so as to remo v e the sacriﬁcial G aN la x- er: and then epitaxial deposition of a second N-type doped G aN alloy layer so as to form a tu nniel junction with the ﬁrst Gi aN alloy la y- er. New
1. 17
  Dependent← claim 16AlGaN
  The method according to claim 16, wherein an alloy of the ﬁrst GaN alloy lay er is AI~ aN. New
2. 22
  Dependent← claim 16first GaN alloy layer (P-doped with magnesium)GaN-type light-emitting diode with tunnel junction
  The method according to claim 16. wherein the substrate maintained in the vapo u r-p he ase epitaxial gro xvth. chamber is overlaid with a multiple quant un xv ell layer. and wherein the ﬁrst C aN alloy layer is deposited on the multiple quantum well layer. New
3. 27
  Dependent← claim 16sacrificial GaN alloy layer
  The method according Claim 16. xv herein the removal of the sacriﬁcial Gi aN alloy lay-er is car r ied out xvitli an atmosphere that contains C TI 2 or HCI in the vapour- phe ase epitaxial gro xv th chamber. New
18
IndependentAlGaN
The method accordi ing to Cla ht n 17. xvi erein the ﬁrst G aN alloy la y er has an alum un um concentration gradient in a thick ni ess thereof. New
19
Independentfirst GaN alloy layer (P-doped with magnesium)
The method according to Cla hn 16. xv herein a thic kn ess of the ﬁrst GiaN alloy layer is bet w- een 50 iu n and 400 n. New
20
Independentsacrificial GaN alloy layer
20 The method according to Clai in 16. wherein an alloy of the sacriﬁcial GaN alloy layer is diﬀerent from an alloy of the ﬁrst G aN alloy layer. New
21
IndependentAlGaN
The method according to Cla im 16. wherein an alloy of the second N-type doped G aN alloy layer is A I GaN. New
23
Independentsecond N-type doped GaN alloy layerGaN-type light-emitting diode with tunnel junction
The method according to Clai mn 16. f a rther comprising a step of depositing a conductive electrode on the second N-type doped C aN alloy layer. New
24
IndependentInaN layer
The method according to Cla im 16. further comprising a step of depositing a nl In aN layer on the ﬁrst G aN alloy la y er, the second N-type doped G aN alloy being deposited on the In aN layer. New
25
Independentsacrificial GaN alloy layer
The method accordi ig to Clai mn 16. xvhl erein a partial a iill onia p ies sure at least equal to 20 0 Pa is maintained in the vapour-phase epitaxial growth chamber during the removal of the sacriﬁcial GaN alloy layer. New
26
Independentsacrificial GaN alloy layer
The method according to Cla im 16. xv herein the removal of the sacriﬁcial Gi aN alloy layer is carried out xvitli an atmosphere comprising di hvy drogen in the vapour- phe ase epitaxial growth chamber. New
28
Independentfirst GaN alloy layer (P-doped with magnesium)
The method according to Clai mn 16. xv herein the step of epitaxial deposition of the ﬁrst GaN alloy layer is preceded by a step of saturation. in magnesium dopant, of a surface on which the ﬁrst Gi aN alloy la x- er is to be deposited. New
29
Independentsacrificial GaN alloy layer
The method according to Cla im 16. xv herein the removal of the sacriﬁcial Gi aN alloy lay-er remo v es a thickness of at least 20 tn fro mn the sacriﬁcial Gi aN alloy lay-er. New
30
Independentfirst GaN alloy layer (P-doped with magnesium)sacrificial GaN alloy layer
The method according to Cla im 16. wherein the removal of the sacriﬁcial Gi aN alloy lay-er is continued until the ﬁrst GaN alloy la y er is re v ealed. New

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-type light-emitting diode with tunnel junction

second N-type doped GaN alloy layerN-type (tunnel junction top)

AlGaNP-type (tunnel junction bottom)

multiple quantum well layer (layer 3)active/MQW

AlGaNN-type base

GaNbuffer

substratesubstrate

Materials

Materials described outside the worked examples.

first GaN alloy layer (P-doped with magnesium)

P-Type Layer In Tunnel Junction/LED Stack

sacrificial GaN alloy layer

Sacrificial Layer Removed During Process To Expose P-Type Layer

second N-type doped GaN alloy layer

N-Type Layer Forming Tunnel Junction With First GaN Alloy Layer

Process steps

Additional fabrication and treatment steps described in the patent.

Mocvd Growth

Step 1

Temperature

1000°C

Ambient

TMGa, TMAl, Cp2Mg, NH3, H2, N2

Process details

thickness nm:50–400

temperature c max:

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
P-doped AlGaN layer (layer 2) thickness	50–400 nm	AlGaN
Magnesium chemical concentration in P-doped AlGaN layer (layer 2)	1000000000000000000–100000000000000000000 cm⁻³

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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