Method of fabricating nonpolar gallium nitride based semiconductor layers, nonpolar semiconductor device, and method of fabricating the same

Seung Kyu Choi

Patent

Atlas literature

Patent

US 9,966,497

Method of fabricating nonpolar gallium nitride based semiconductor layers, nonpolar semiconductor device, and method of fabricating the same

Seung Kyu Choi

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIGS. 1 3A to 13 C are opti c al pho togr aphs s howing surf ace morphologies of t he eptaNi al l aye r accordin g to the use of th e intermediate- temperature …

FIG. 4

FIGS. 4A to 4 <, are'£ opt ical photogra phs sh owin su r- fac e mo rphotl og ies oﬀhe nonpo l=.ar ealfbum niitrAide aye acc ordi ni to kinds of a rabt ent cs …

FIG. 6

FIG. 6 is a cr oss-sectitonal vi ew fo r descrbing a light emitting diode according. to an embodiment of the pr esent invemion. SVG …

FIG. 7

FIG. 7 ~ is a emsCs-sc Ltio nal d vie for decscrib"ing ih emitting d ijode accori#'> i?.: tot? anter ema bodi men:' t of the pr eseN nt inw ention. 1.0 ~ [OW₈ …

FIG. 9

FIG. 9, the superlattice layer 120 may be conﬁgured in such a way that a three-layer structure of InGa N lay er 12 l/AI GaN la yer 1 22/C aN layer 123 is r e …

FIG. 11

FIG. 11, the actie laye r 130 h as a str uct ure in wh ich ba rri er laeirs 3 l a and 3 1b and we ll lay ers 33 n, 33 and 3 3 p are alt ernately laminate d. T …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

13 independent · 12 dependent

1
Independent
Claims 1-22. Canceled
22
Independent
Canceled
23
IndependentGaNintermediate-temperature buffer layer
The method of claim 36, wherein the nonpolar gallium nitride substrate has an m -plane growth surface, and the intermediate-temperature buﬀer layer is grown on the m -plane growth surface. Previously presented
1. 24
  Dependent← claim 23intermediate-temperature buffer layerGaN
  The method of claim 23, wherein the intermediate- temperature buﬀer layer includes a GaN layer. Previously presented
25
Independent
. Canceled
26
IndependentGaNnonpolar light emitting diode
The method of claim 36, wherein the nonpolar gallium nitride semiconductor device includes a nonpolar light emitting diode. Previously presented
27
Independentnonpolar GaN semiconductor device with superlattice
The method of claim 36, further including: forming a superlattice layer with a multi-layered structure between the ﬁrst semiconductor layer and the active layer. Previously presented
28
Independent
. Canceled
29
Independentnonpolar GaN semiconductor device with graded active layer barrier structure
The method of claim 36, wherein the ﬁrst barrier layer has a greater thickness than an average thickness of the ba rr ier layers. Previously presented
1. 30
  Dependent← claim 29nonpolar GaN semiconductor device with graded active layer barrier structure
  The method of claim 29, wherein the ﬁrst barrier layer is disposed at a bottommost position in the structure of the active layer. Previously presented
2. 31
  Dependent← claim 29nonpolar GaN semiconductor device with graded active layer barrier structure
  The method of claim 29, wherein the thickness of the ﬁrst barr ier layer includes a thickness from 50A to 70A. Previously presented
3. 32
  Dependent← claim 29nonpolar GaN semiconductor device with graded active layer barrier structure
  The method of claim 29, wherein the third ba rr ier layer is disposed at a topmost position in the structure of the active layer. Previously presented
33
Independentnonpolar GaN semiconductor device with graded active layer barrier structure
The method of claim 36, wherein the second barrier layer has a smaller thickness than an average thickness of the barrier layers. Previously presented
1. 34
  Dependent← claim 33nonpolar GaN semiconductor device with graded active layer barrier structure
  The method of claim 33, wherein the second barrier layer is disposed between a topmost position in the structure of the active layer and a bottommost position in the structure of the active layer. Previously presented
2. 35
  Dependent← claim 33nonpolar GaN semiconductor device with graded active layer barrier structure
  The method of claim 33, wherein the thickness of the second barrier layer includes a thickness from 30A to 50A. Previously presented
36
IndependentGaNintermediate-temperature buffer layernonpolar GaN semiconductor device with graded active layer barrier structure
(Cu rr ently Amended) A method of fabricating a nonpolar gallium nitride semiconductor device using metal organic chemical vapor deposition, the method comprising: growing an intermediate-temperature buﬀer layer over a nonpolar gallium nitride substrate at a growth temperature of a range from 700 ° C to 800 °C; growing a gallium nitride based ﬁrst semiconductor layer over the intermediate- temperature buﬀer layer at a growth temperature above 900 ° C, wherein the ﬁrst semiconductor layer is n-typed semiconductor layer; forming an active layer over the ﬁrst semiconductor layer; and forming a second semiconductor layer over the active layer, wherein the second semiconductor layer is p-typed semiconductor layer; wherein the active layer includes a structure in which ba rri er layers and well layers are alternately laminated, wherein the barrier layers include a plurality of ﬁrst ba rr ier layers each having a ﬁrst thickness, a plurality of second barrier layers formed over the plurality of ﬁrst ba rr ier layers and having a second thickness, and a third barrier layer formed over the second ba rr ier layers and having a third thickness, wherein the plurality of ﬁrst ba rr ier layers, the plurality of second barr ier layers, and the third ba rr ier layer are sequentially arranged along a direction from the ﬁrst semiconductor layer to the second semiconductor layer such that the plurality of the ﬁrst barrier layers are followed by the plurality of second ba rr ier layers and the third ba rr ier layer, and wherein the third barrier layer is closer to the second semiconductor layer than the ﬁrst barrier layer and the second ba rr ier layer are and the third thickness is greater than the ﬁrst thickness. Currently amended
1. 37
  Dependent← claim 36nonpolar GaN semiconductor device with graded active layer barrier structure
  The method of claim 36, wherein the well layers have substantially the same thickness. Previously presented
2. 45
  Dependent← claim 36nonpolar GaN semiconductor device with graded active layer barrier structure
  The method of claim 36, wherein the ﬁrst Previously presented ba rr ier layer includes a ﬁrst plurality of barrier plurality of barrier layers formed over the ﬁrst thickness, and a third barrier layer formed over the of ba rr ier layers includes more ba rr ier Previously presented thickness is greater than the second thickness.
38
IndependentGaNintermediate-temperature buffer layernonpolar GaN semiconductor device with graded active layer barrier structure
A method of fabricating a nonpolar gallium nitride semiconductor device using metal organic chemical vapor deposition, the method comprising: providing a gallium nitride substrate; growing an intermediate-temperature buﬀer layer over the gallium nitride substrate in a ﬁrst temperature range higher than 600 °C; growing an n-type contact layer over the intermediate-temperature buﬀer layer in a second temperature range higher than the ﬁrst temperature range; and growing an active layer over the n-type contact layer to have a structure in which barrier layers and well layers are alternately laminated, and wherein the ba rr ier layers include a ﬁrst plurality of barrier layers each having a ﬁrst thickness, a second plurality of barrier layers formed over the ﬁrst plurality of ba rr ier layers and having a second thickness, and a third barrier layer formed over the second plurality of barrier layers and having a third thickness greater than the second thickness, wherein the ﬁrst plurality of ba rr ier layers, the second plurality of ba rr ier layers, and the third barrier layer sequentially arr anged along a direction away from the n-type contact layer such that the ﬁrst plurality of barr ier layers are followed by the second plurality of ba rr ier layers and the third ba rr ier layer, and wherein the third barrier layer is furthest away from the n-type contact layer as compared to the ﬁrst plurality of barrier layers and the second plurality of barrier layers. Currently amended
1. 39
  Dependent← claim 38
  The method of claim 38, wherein the ﬁrst temperature range is from 700 ° C to 800 ° C and the second temperature range is above 900 °C. Previously presented
2. 40
  Dependent← claim 38
  The method of claim 38, wherein the ﬁrst thickness is greater than the second thickness. Previously presented
3. 41
  Dependent← claim 38
  The method of claim 38, wherein the ﬁrst thickness is smaller than the third thickness. Previously presented
4. 42
  Dependent← claim 38nonpolar GaN semiconductor device with superlattice
  The method of claim 38, further comprising: after the growing of the n-type contact layer and before the growing of the active layer, growing a superlattice layer over the n-type contact layer. Previously presented
43
IndependentGaNintermediate-temperature buffer layernonpolar GaN semiconductor device with graded active layer barrier structure
A method of fabricating a nonpolar gallium nitride semiconductor device using metal organic chemical vapor deposition, the method comprising: providing a gallium nitride substrate; growing an intermediate-temperature buﬀer layer over the gallium nitride substrate in a ﬁrst temperature range higher than 600 °C; growing an n-type contact layer over the intermediate-temperature buﬀer layer in a second temperature range higher than the ﬁrst temperature range; and growing an active layer over the n-type contact layer to have a structure in which barrier layers and well layers are alternately laminated, and wherein the ba rr ier layer includes a ﬁrst plurality of ba rri er layers each having a ﬁrst thickness, a second plurality of barrier layers formed over the ﬁrst plurality of barrier layers and having a second thickness, and a third barrier layer formed over the second plurality of ba rr ier layers and wherein the ﬁrst plurality of ba rr ier layers includes more ba rr ier layers than the second plurality of barrier layers. Previously presented
44
IndependentGaNintermediate-temperature buffer layernonpolar GaN semiconductor device with graded active layer barrier structure
A method of fabricating a nonpolar gallium nitride semiconductor device using metal organic chemical vapor deposition, the method comprising: providing a gallium nitride substrate; growing an intermediate-temperature buﬀer layer over the gallium nitride substrate in a ﬁrst temperature range higher than 600 °C; growing an n-type contact layer over the intermediate-temperature buﬀer layer in a second temperature range higher than the ﬁrst temperature range; and growing an active layer over the n-type contact layer to have a structure in which barrier layers and well layers are alternately laminated, and wherein the layers each having a ﬁrst thickness, a second plurality of barrier layers and having a second second ba rr ier layers and wherein the ﬁrst plurality layers than the second plurality of ba rr ier layers.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

nonpolar light emitting diode

p-type second semiconductor layerp-type layer

barrier layersactive region

GaNn-type contact layer

intermediate-temperature buffer layerbuffer layer

GaNsubstrate

nonpolar GaN semiconductor device with superlattice

Materials

Materials described outside the worked examples.

nonpolar gallium nitride substrate

GaN

Substrate

Buffer LayerN-Type Contact Layer

intermediate-temperature buffer layer

Process steps

Additional fabrication and treatment steps described in the patent.

Mocvd Growth

Step 1

Temperature

700, 800°C

Ambient

Process details

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Temperature	700–800 °C	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Method of fabricating nonpolar gallium nitride based semiconductor layers, nonpolar semiconductor device, and method of fabricating the same | Matter42 Literature