Patent
US 9,991,416Light Emitting Diode and Method of Manufacturing the Same
Taeksoo JI
US
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Atlas literature
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US 9,991,416Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2, trimethylgallium (TMG), trimethylindium (TMI) and a nitrogen 10 based gas (NH 3 or N 2) are supplied onto a substrate 100 on which the n-type …
FIGS. 3A and 3B are schematic diagrams illustrating a method of manufacturing a light 20 emitting diode according to another embodiment of the present …
FIGS. 4A and 4B are a schematic diagram illustrating a structure of a light emitting diode according to one embodiment of the present invention and an image of …
FIGS. 6A and 6B are tables describing photoluminescence intensity (PL intensity) 20 according to a change of wavelength and temperature according to Embodiment …
FIGS. 7A and 7B are tables illustrating electrical characteristics according to wavelength according to Embodiment 1 and Comparative Embodiments I to 3 of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a light emitting diode, comprising: forming an n-type semiconductor layer on a substrate; forming an inclined type superlattice thin film layer on the n-type semiconductor layer; forming an active layer having a quantum well structure on the inclined type superlattice thin film layer; and forming a p-type semiconductor layer on the active layer, wherein forming the inclined type superlattice thin film layer comprises: forming an InGaN thin film, subsequently removing indium from an upper portion of the InGaN thin film such that the upper portion turns to a GaN layer while a lower portion of the InGaN thin film becomes an InGaN layer, and repeating the steps of forming an InGaN thin film and subsequently removing indium therefrom, wherein repeating the steps forms the inclined type superlattice thin film layer, in which a pair of the GaN layer and the InGaN layer is repeated, wherein a compositional ratio of indium varies in the inclined type superlattice thin film layer such that more indium is contained in InGaN layers located closer to the active layer. Currently amended
The method of claim 1, wherein before forming the active layer of the quantum well structure, the method further comprises forming -a another GaN layer on the inclined type superlattice thin film layer. Currently amended
(Canceled Herein) Canceled
The method of claim-2 1, wherein the InGaN is formed using a metal organic chemical vapor deposition (MOCVD) method under nitrogen atmosphere. Currently amended
The method of claim-2 1, wherein removing indium comprises supplying hydrogen (H 2) onto the upper portion of the InGaN thin film. Currently amended
The method of claim 4, wherein hydrogen is supplied for 25 seconds to 30 seconds at a speed in a range of 8,000 s ee m to 8,500 s ecm. Currently amended
The method of claim-2 1, wherein the steps of forming an InGaN thin film and subsequently removing indium therefrom is repeated 2 to 100 times. Currently amended
The method of claim -r_ 1, wherein in repeating the steps, multiple ones of forming the I nGaN thin film are performed at different temperatures such that a later one of forming the InGaN thin film is performed at a temperature lower than that of an earlier one of forming the InGaN thin film. Currently amended
The method of claim 7, wherein the later one of forming the InGaN thin film is performed at a temperature lower than that of the earlier one by 5 *C. Currently amended
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Manufacturing of a light emitting diode with an inclined type superlattice thin film layer. Process temperature is varied during repeated InGaN/GaN pair formation steps. TEM imaging performed on the resulting LED structure. Photoluminescence intensity (PL intensity) and electrical characteristics are compared with Comparative Embodiments 1 to 3.
Layer stacks claimed or described, ordered top of device to substrate.
light emitting diode with inclined type superlattice thin film layer
Materials described outside the worked examples.
hydrogen
H₂
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 25–30 seconds | — |
Thickness |
Table 1
In particular, the measurement values are represented by following Table 1.
p. 12
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,991,416Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2, trimethylgallium (TMG), trimethylindium (TMI) and a nitrogen 10 based gas (NH 3 or N 2) are supplied onto a substrate 100 on which the n-type …
FIGS. 3A and 3B are schematic diagrams illustrating a method of manufacturing a light 20 emitting diode according to another embodiment of the present …
FIGS. 4A and 4B are a schematic diagram illustrating a structure of a light emitting diode according to one embodiment of the present invention and an image of …
FIGS. 6A and 6B are tables describing photoluminescence intensity (PL intensity) 20 according to a change of wavelength and temperature according to Embodiment …
FIGS. 7A and 7B are tables illustrating electrical characteristics according to wavelength according to Embodiment 1 and Comparative Embodiments I to 3 of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a light emitting diode, comprising: forming an n-type semiconductor layer on a substrate; forming an inclined type superlattice thin film layer on the n-type semiconductor layer; forming an active layer having a quantum well structure on the inclined type superlattice thin film layer; and forming a p-type semiconductor layer on the active layer, wherein forming the inclined type superlattice thin film layer comprises: forming an InGaN thin film, subsequently removing indium from an upper portion of the InGaN thin film such that the upper portion turns to a GaN layer while a lower portion of the InGaN thin film becomes an InGaN layer, and repeating the steps of forming an InGaN thin film and subsequently removing indium therefrom, wherein repeating the steps forms the inclined type superlattice thin film layer, in which a pair of the GaN layer and the InGaN layer is repeated, wherein a compositional ratio of indium varies in the inclined type superlattice thin film layer such that more indium is contained in InGaN layers located closer to the active layer. Currently amended
The method of claim 1, wherein before forming the active layer of the quantum well structure, the method further comprises forming -a another GaN layer on the inclined type superlattice thin film layer. Currently amended
(Canceled Herein) Canceled
The method of claim-2 1, wherein the InGaN is formed using a metal organic chemical vapor deposition (MOCVD) method under nitrogen atmosphere. Currently amended
The method of claim-2 1, wherein removing indium comprises supplying hydrogen (H 2) onto the upper portion of the InGaN thin film. Currently amended
The method of claim 4, wherein hydrogen is supplied for 25 seconds to 30 seconds at a speed in a range of 8,000 s ee m to 8,500 s ecm. Currently amended
The method of claim-2 1, wherein the steps of forming an InGaN thin film and subsequently removing indium therefrom is repeated 2 to 100 times. Currently amended
The method of claim -r_ 1, wherein in repeating the steps, multiple ones of forming the I nGaN thin film are performed at different temperatures such that a later one of forming the InGaN thin film is performed at a temperature lower than that of an earlier one of forming the InGaN thin film. Currently amended
The method of claim 7, wherein the later one of forming the InGaN thin film is performed at a temperature lower than that of the earlier one by 5 *C. Currently amended
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Manufacturing of a light emitting diode with an inclined type superlattice thin film layer. Process temperature is varied during repeated InGaN/GaN pair formation steps. TEM imaging performed on the resulting LED structure. Photoluminescence intensity (PL intensity) and electrical characteristics are compared with Comparative Embodiments 1 to 3.
Layer stacks claimed or described, ordered top of device to substrate.
light emitting diode with inclined type superlattice thin film layer
Materials described outside the worked examples.
hydrogen
H₂
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 25–30 seconds | — |
Thickness |
Table 1
In particular, the measurement values are represented by following Table 1.
p. 12
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,991,416Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2, trimethylgallium (TMG), trimethylindium (TMI) and a nitrogen 10 based gas (NH 3 or N 2) are supplied onto a substrate 100 on which the n-type …
FIGS. 3A and 3B are schematic diagrams illustrating a method of manufacturing a light 20 emitting diode according to another embodiment of the present …
FIGS. 4A and 4B are a schematic diagram illustrating a structure of a light emitting diode according to one embodiment of the present invention and an image of …
FIGS. 6A and 6B are tables describing photoluminescence intensity (PL intensity) 20 according to a change of wavelength and temperature according to Embodiment …
FIGS. 7A and 7B are tables illustrating electrical characteristics according to wavelength according to Embodiment 1 and Comparative Embodiments I to 3 of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a light emitting diode, comprising: forming an n-type semiconductor layer on a substrate; forming an inclined type superlattice thin film layer on the n-type semiconductor layer; forming an active layer having a quantum well structure on the inclined type superlattice thin film layer; and forming a p-type semiconductor layer on the active layer, wherein forming the inclined type superlattice thin film layer comprises: forming an InGaN thin film, subsequently removing indium from an upper portion of the InGaN thin film such that the upper portion turns to a GaN layer while a lower portion of the InGaN thin film becomes an InGaN layer, and repeating the steps of forming an InGaN thin film and subsequently removing indium therefrom, wherein repeating the steps forms the inclined type superlattice thin film layer, in which a pair of the GaN layer and the InGaN layer is repeated, wherein a compositional ratio of indium varies in the inclined type superlattice thin film layer such that more indium is contained in InGaN layers located closer to the active layer. Currently amended
The method of claim 1, wherein before forming the active layer of the quantum well structure, the method further comprises forming -a another GaN layer on the inclined type superlattice thin film layer. Currently amended
(Canceled Herein) Canceled
The method of claim-2 1, wherein the InGaN is formed using a metal organic chemical vapor deposition (MOCVD) method under nitrogen atmosphere. Currently amended
The method of claim-2 1, wherein removing indium comprises supplying hydrogen (H 2) onto the upper portion of the InGaN thin film. Currently amended
The method of claim 4, wherein hydrogen is supplied for 25 seconds to 30 seconds at a speed in a range of 8,000 s ee m to 8,500 s ecm. Currently amended
The method of claim-2 1, wherein the steps of forming an InGaN thin film and subsequently removing indium therefrom is repeated 2 to 100 times. Currently amended
The method of claim -r_ 1, wherein in repeating the steps, multiple ones of forming the I nGaN thin film are performed at different temperatures such that a later one of forming the InGaN thin film is performed at a temperature lower than that of an earlier one of forming the InGaN thin film. Currently amended
The method of claim 7, wherein the later one of forming the InGaN thin film is performed at a temperature lower than that of the earlier one by 5 *C. Currently amended
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Manufacturing of a light emitting diode with an inclined type superlattice thin film layer. Process temperature is varied during repeated InGaN/GaN pair formation steps. TEM imaging performed on the resulting LED structure. Photoluminescence intensity (PL intensity) and electrical characteristics are compared with Comparative Embodiments 1 to 3.
Layer stacks claimed or described, ordered top of device to substrate.
light emitting diode with inclined type superlattice thin film layer
Materials described outside the worked examples.
hydrogen
H₂
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 25–30 seconds | — |
Thickness |
Table 1
In particular, the measurement values are represented by following Table 1.
p. 12
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,991,416Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2, trimethylgallium (TMG), trimethylindium (TMI) and a nitrogen 10 based gas (NH 3 or N 2) are supplied onto a substrate 100 on which the n-type …
FIGS. 3A and 3B are schematic diagrams illustrating a method of manufacturing a light 20 emitting diode according to another embodiment of the present …
FIGS. 4A and 4B are a schematic diagram illustrating a structure of a light emitting diode according to one embodiment of the present invention and an image of …
FIGS. 6A and 6B are tables describing photoluminescence intensity (PL intensity) 20 according to a change of wavelength and temperature according to Embodiment …
FIGS. 7A and 7B are tables illustrating electrical characteristics according to wavelength according to Embodiment 1 and Comparative Embodiments I to 3 of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a light emitting diode, comprising: forming an n-type semiconductor layer on a substrate; forming an inclined type superlattice thin film layer on the n-type semiconductor layer; forming an active layer having a quantum well structure on the inclined type superlattice thin film layer; and forming a p-type semiconductor layer on the active layer, wherein forming the inclined type superlattice thin film layer comprises: forming an InGaN thin film, subsequently removing indium from an upper portion of the InGaN thin film such that the upper portion turns to a GaN layer while a lower portion of the InGaN thin film becomes an InGaN layer, and repeating the steps of forming an InGaN thin film and subsequently removing indium therefrom, wherein repeating the steps forms the inclined type superlattice thin film layer, in which a pair of the GaN layer and the InGaN layer is repeated, wherein a compositional ratio of indium varies in the inclined type superlattice thin film layer such that more indium is contained in InGaN layers located closer to the active layer. Currently amended
The method of claim 1, wherein before forming the active layer of the quantum well structure, the method further comprises forming -a another GaN layer on the inclined type superlattice thin film layer. Currently amended
(Canceled Herein) Canceled
The method of claim-2 1, wherein the InGaN is formed using a metal organic chemical vapor deposition (MOCVD) method under nitrogen atmosphere. Currently amended
The method of claim-2 1, wherein removing indium comprises supplying hydrogen (H 2) onto the upper portion of the InGaN thin film. Currently amended
The method of claim 4, wherein hydrogen is supplied for 25 seconds to 30 seconds at a speed in a range of 8,000 s ee m to 8,500 s ecm. Currently amended
The method of claim-2 1, wherein the steps of forming an InGaN thin film and subsequently removing indium therefrom is repeated 2 to 100 times. Currently amended
The method of claim -r_ 1, wherein in repeating the steps, multiple ones of forming the I nGaN thin film are performed at different temperatures such that a later one of forming the InGaN thin film is performed at a temperature lower than that of an earlier one of forming the InGaN thin film. Currently amended
The method of claim 7, wherein the later one of forming the InGaN thin film is performed at a temperature lower than that of the earlier one by 5 *C. Currently amended
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Manufacturing of a light emitting diode with an inclined type superlattice thin film layer. Process temperature is varied during repeated InGaN/GaN pair formation steps. TEM imaging performed on the resulting LED structure. Photoluminescence intensity (PL intensity) and electrical characteristics are compared with Comparative Embodiments 1 to 3.
Layer stacks claimed or described, ordered top of device to substrate.
light emitting diode with inclined type superlattice thin film layer
Materials described outside the worked examples.
hydrogen
H₂
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 25–30 seconds | — |
Thickness |
Table 1
In particular, the measurement values are represented by following Table 1.
p. 12
Related documents with shared materials, methods, properties, or citations.
| — |
Thickness | 2–3 nm | — |
Temperature | 10–300 K | — |
Pressure | 2–100 pa | — |
| — |
Thickness | 2–3 nm | — |
Temperature | 10–300 K | — |
Pressure | 2–100 pa | — |
| — |
Thickness | 2–3 nm | — |
Temperature | 10–300 K | — |
Pressure | 2–100 pa | — |
| — |
Thickness | 2–3 nm | — |
Temperature | 10–300 K | — |
Pressure | 2–100 pa | — |