Patent
US 12,347,678 B2MOCVD METHOD FOR GROWING INALGAN/GAN HETEROSTRUCTURE
Edward Yi Chang, You-Chen Weng, Xia-Xi Zheng
NATIONAL YANG MING CHIAO TUNG UNIVERSITY, Hsinchu (TW)·Jul. 1, 2025·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 12,347,678 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a flowchart of a MOCVD method for growing an InAlGaN/GaN heterostructure according to one embodiment of the present invention.
FIG. 2B schematically show sectional views corresponding to the steps of a MOCVD method for grow- ing an InAlGaN/GaN heterostructure according to one …
FIG. 3 shows a sectional view of an HEMT element containing an in-situ grown SiNx/InAlGaN/GaN hetero- structure fabricated according to one embodiment of the 5 …
FIG. 4 shows the surface micro-topographies of the InAlGaN/GaN heterostructures (taken by the atomic force microscope AFM D₃₁₀₀), wherein the image (a) is free …
FIG. 5 shows the surface micro-topographies of the interfaces of the in-situ grown SiNx protective layers and the InAlGaN barrier layers (taken by a …
FIG. 6 shows the XPS spectra of the inner cores of the SiNx protective layers respectively in-situ grown at different 20 temperatures, wherein the images (a), …
FIG. 7 shows a C-V curve obtained in a double-sweep 25 scan of the SiNx protective layer in-situ grown at a fre- quency of 100 kHz, wherein the scan is …
FIG. 8A shows C-V curves obtained in double-sweep scans of the in-situ grown SiNx protective layer wherein the 30 scans are performed at frequencies ranging …
FIG. 9D show the relationships of the shifts of the threshold voltage (Vth) and 40 the stress time ranging from 0 seconds and 1001 seconds while the gate …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating an indium aluminum gallium nitride (InAlGaN)/gallium nitride (GaN) heterostructure, which is realized by a metal-organic chemical vapor depo-sition (MOCVD) process and comprises Step (1): providing a substrate, and sequentially growing a nitride nucleation layer, a GaN buffer layer, an InAlGaN barrier layer on the substrate; and Step (2): using a precursor gas containing silane to in-situ grow a SiNx protective layer on the InAlGaN barrier layer at a temperature of 950-1000° C., B₂ wherein Step (1) and Step (2) are undertaken in an identical reaction chamber.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein the precursor gas contains silane (SiH₄), disilane (Si₂H₆), trisilane (Si₃H₈), tetrasilane (Si₄H₁₀), tetraethoxysilane (TEOS), or a combi-nation thereof.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein Step (2) is performed for 2-5 seconds at a gas flow rate of 5-8 sccm and a chamber pressure of less than 50 Torr.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein the nitride nucle-ation layer is an aluminum nitride (AlN) layer.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein Step (1) further includes providing a transitional layer, and wherein the transitional layer is grown between the nitride nucleation layer and the GaN buffer layer.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein Step (1) further include providing a barrier intermediate layer, and wherein the barrier intermediate layer is grown between the GaN buffer layer and the InAlGaN barrier layer.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein Step (1) uses trim-ethyl indium (TMIn), trimethyl aluminum (TMAl), trim-ethyl gallium (TMGa), and ammonia gas (NH₃) as precursor materials to grow the InAlGaN barrier layer.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein the InAlGaN barrier layer has a thickness of 3-5 nm. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials2 process steps
MOCVD process in a single reaction chamber: substrate (sapphire, SiC, or Si) is loaded; AlN nucleation layer, transitional layer, GaN buffer layer, AlN barrier intermediate layer, and InAlGaN barrier layer (3-5 nm, using TMIn, TMAl, TMGa, NH₃) are grown sequentially (Step S₁₀); then disilane (Si₂H₆) and NH₃ are filled into the chamber for 2-5 s at 950-1000°C, 5-8 sccm, <50 Torr to in-situ grow a SiNx protective layer on the InAlGaN barrier layer (Step S₂₀), yielding the in-situ SiNx/InAlGaN/GaN heterostructure.
Layer stacks claimed or described, ordered top of device to substrate.
InAlGaN/GaN HEMT with in-situ SiNx
Materials described outside the worked examples.
silane
SiH₄
trisilane
Si₃H₈
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 0–1001 seconds | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Cited non-patent literature · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,347,678 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a flowchart of a MOCVD method for growing an InAlGaN/GaN heterostructure according to one embodiment of the present invention.
FIG. 2B schematically show sectional views corresponding to the steps of a MOCVD method for grow- ing an InAlGaN/GaN heterostructure according to one …
FIG. 3 shows a sectional view of an HEMT element containing an in-situ grown SiNx/InAlGaN/GaN hetero- structure fabricated according to one embodiment of the 5 …
FIG. 4 shows the surface micro-topographies of the InAlGaN/GaN heterostructures (taken by the atomic force microscope AFM D₃₁₀₀), wherein the image (a) is free …
FIG. 5 shows the surface micro-topographies of the interfaces of the in-situ grown SiNx protective layers and the InAlGaN barrier layers (taken by a …
FIG. 6 shows the XPS spectra of the inner cores of the SiNx protective layers respectively in-situ grown at different 20 temperatures, wherein the images (a), …
FIG. 7 shows a C-V curve obtained in a double-sweep 25 scan of the SiNx protective layer in-situ grown at a fre- quency of 100 kHz, wherein the scan is …
FIG. 8A shows C-V curves obtained in double-sweep scans of the in-situ grown SiNx protective layer wherein the 30 scans are performed at frequencies ranging …
FIG. 9D show the relationships of the shifts of the threshold voltage (Vth) and 40 the stress time ranging from 0 seconds and 1001 seconds while the gate …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating an indium aluminum gallium nitride (InAlGaN)/gallium nitride (GaN) heterostructure, which is realized by a metal-organic chemical vapor depo-sition (MOCVD) process and comprises Step (1): providing a substrate, and sequentially growing a nitride nucleation layer, a GaN buffer layer, an InAlGaN barrier layer on the substrate; and Step (2): using a precursor gas containing silane to in-situ grow a SiNx protective layer on the InAlGaN barrier layer at a temperature of 950-1000° C., B₂ wherein Step (1) and Step (2) are undertaken in an identical reaction chamber.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein the precursor gas contains silane (SiH₄), disilane (Si₂H₆), trisilane (Si₃H₈), tetrasilane (Si₄H₁₀), tetraethoxysilane (TEOS), or a combi-nation thereof.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein Step (2) is performed for 2-5 seconds at a gas flow rate of 5-8 sccm and a chamber pressure of less than 50 Torr.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein the nitride nucle-ation layer is an aluminum nitride (AlN) layer.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein Step (1) further includes providing a transitional layer, and wherein the transitional layer is grown between the nitride nucleation layer and the GaN buffer layer.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein Step (1) further include providing a barrier intermediate layer, and wherein the barrier intermediate layer is grown between the GaN buffer layer and the InAlGaN barrier layer.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein Step (1) uses trim-ethyl indium (TMIn), trimethyl aluminum (TMAl), trim-ethyl gallium (TMGa), and ammonia gas (NH₃) as precursor materials to grow the InAlGaN barrier layer.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein the InAlGaN barrier layer has a thickness of 3-5 nm. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials2 process steps
MOCVD process in a single reaction chamber: substrate (sapphire, SiC, or Si) is loaded; AlN nucleation layer, transitional layer, GaN buffer layer, AlN barrier intermediate layer, and InAlGaN barrier layer (3-5 nm, using TMIn, TMAl, TMGa, NH₃) are grown sequentially (Step S₁₀); then disilane (Si₂H₆) and NH₃ are filled into the chamber for 2-5 s at 950-1000°C, 5-8 sccm, <50 Torr to in-situ grow a SiNx protective layer on the InAlGaN barrier layer (Step S₂₀), yielding the in-situ SiNx/InAlGaN/GaN heterostructure.
Layer stacks claimed or described, ordered top of device to substrate.
InAlGaN/GaN HEMT with in-situ SiNx
Materials described outside the worked examples.
silane
SiH₄
trisilane
Si₃H₈
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 0–1001 seconds | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Cited non-patent literature · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,347,678 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a flowchart of a MOCVD method for growing an InAlGaN/GaN heterostructure according to one embodiment of the present invention.
FIG. 2B schematically show sectional views corresponding to the steps of a MOCVD method for grow- ing an InAlGaN/GaN heterostructure according to one …
FIG. 3 shows a sectional view of an HEMT element containing an in-situ grown SiNx/InAlGaN/GaN hetero- structure fabricated according to one embodiment of the 5 …
FIG. 4 shows the surface micro-topographies of the InAlGaN/GaN heterostructures (taken by the atomic force microscope AFM D₃₁₀₀), wherein the image (a) is free …
FIG. 5 shows the surface micro-topographies of the interfaces of the in-situ grown SiNx protective layers and the InAlGaN barrier layers (taken by a …
FIG. 6 shows the XPS spectra of the inner cores of the SiNx protective layers respectively in-situ grown at different 20 temperatures, wherein the images (a), …
FIG. 7 shows a C-V curve obtained in a double-sweep 25 scan of the SiNx protective layer in-situ grown at a fre- quency of 100 kHz, wherein the scan is …
FIG. 8A shows C-V curves obtained in double-sweep scans of the in-situ grown SiNx protective layer wherein the 30 scans are performed at frequencies ranging …
FIG. 9D show the relationships of the shifts of the threshold voltage (Vth) and 40 the stress time ranging from 0 seconds and 1001 seconds while the gate …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating an indium aluminum gallium nitride (InAlGaN)/gallium nitride (GaN) heterostructure, which is realized by a metal-organic chemical vapor depo-sition (MOCVD) process and comprises Step (1): providing a substrate, and sequentially growing a nitride nucleation layer, a GaN buffer layer, an InAlGaN barrier layer on the substrate; and Step (2): using a precursor gas containing silane to in-situ grow a SiNx protective layer on the InAlGaN barrier layer at a temperature of 950-1000° C., B₂ wherein Step (1) and Step (2) are undertaken in an identical reaction chamber.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein the precursor gas contains silane (SiH₄), disilane (Si₂H₆), trisilane (Si₃H₈), tetrasilane (Si₄H₁₀), tetraethoxysilane (TEOS), or a combi-nation thereof.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein Step (2) is performed for 2-5 seconds at a gas flow rate of 5-8 sccm and a chamber pressure of less than 50 Torr.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein the nitride nucle-ation layer is an aluminum nitride (AlN) layer.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein Step (1) further includes providing a transitional layer, and wherein the transitional layer is grown between the nitride nucleation layer and the GaN buffer layer.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein Step (1) further include providing a barrier intermediate layer, and wherein the barrier intermediate layer is grown between the GaN buffer layer and the InAlGaN barrier layer.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein Step (1) uses trim-ethyl indium (TMIn), trimethyl aluminum (TMAl), trim-ethyl gallium (TMGa), and ammonia gas (NH₃) as precursor materials to grow the InAlGaN barrier layer.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein the InAlGaN barrier layer has a thickness of 3-5 nm. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials2 process steps
MOCVD process in a single reaction chamber: substrate (sapphire, SiC, or Si) is loaded; AlN nucleation layer, transitional layer, GaN buffer layer, AlN barrier intermediate layer, and InAlGaN barrier layer (3-5 nm, using TMIn, TMAl, TMGa, NH₃) are grown sequentially (Step S₁₀); then disilane (Si₂H₆) and NH₃ are filled into the chamber for 2-5 s at 950-1000°C, 5-8 sccm, <50 Torr to in-situ grow a SiNx protective layer on the InAlGaN barrier layer (Step S₂₀), yielding the in-situ SiNx/InAlGaN/GaN heterostructure.
Layer stacks claimed or described, ordered top of device to substrate.
InAlGaN/GaN HEMT with in-situ SiNx
Materials described outside the worked examples.
silane
SiH₄
trisilane
Si₃H₈
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 0–1001 seconds | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Cited non-patent literature · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,347,678 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a flowchart of a MOCVD method for growing an InAlGaN/GaN heterostructure according to one embodiment of the present invention.
FIG. 2B schematically show sectional views corresponding to the steps of a MOCVD method for grow- ing an InAlGaN/GaN heterostructure according to one …
FIG. 3 shows a sectional view of an HEMT element containing an in-situ grown SiNx/InAlGaN/GaN hetero- structure fabricated according to one embodiment of the 5 …
FIG. 4 shows the surface micro-topographies of the InAlGaN/GaN heterostructures (taken by the atomic force microscope AFM D₃₁₀₀), wherein the image (a) is free …
FIG. 5 shows the surface micro-topographies of the interfaces of the in-situ grown SiNx protective layers and the InAlGaN barrier layers (taken by a …
FIG. 6 shows the XPS spectra of the inner cores of the SiNx protective layers respectively in-situ grown at different 20 temperatures, wherein the images (a), …
FIG. 7 shows a C-V curve obtained in a double-sweep 25 scan of the SiNx protective layer in-situ grown at a fre- quency of 100 kHz, wherein the scan is …
FIG. 8A shows C-V curves obtained in double-sweep scans of the in-situ grown SiNx protective layer wherein the 30 scans are performed at frequencies ranging …
FIG. 9D show the relationships of the shifts of the threshold voltage (Vth) and 40 the stress time ranging from 0 seconds and 1001 seconds while the gate …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating an indium aluminum gallium nitride (InAlGaN)/gallium nitride (GaN) heterostructure, which is realized by a metal-organic chemical vapor depo-sition (MOCVD) process and comprises Step (1): providing a substrate, and sequentially growing a nitride nucleation layer, a GaN buffer layer, an InAlGaN barrier layer on the substrate; and Step (2): using a precursor gas containing silane to in-situ grow a SiNx protective layer on the InAlGaN barrier layer at a temperature of 950-1000° C., B₂ wherein Step (1) and Step (2) are undertaken in an identical reaction chamber.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein the precursor gas contains silane (SiH₄), disilane (Si₂H₆), trisilane (Si₃H₈), tetrasilane (Si₄H₁₀), tetraethoxysilane (TEOS), or a combi-nation thereof.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein Step (2) is performed for 2-5 seconds at a gas flow rate of 5-8 sccm and a chamber pressure of less than 50 Torr.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein the nitride nucle-ation layer is an aluminum nitride (AlN) layer.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein Step (1) further includes providing a transitional layer, and wherein the transitional layer is grown between the nitride nucleation layer and the GaN buffer layer.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein Step (1) further include providing a barrier intermediate layer, and wherein the barrier intermediate layer is grown between the GaN buffer layer and the InAlGaN barrier layer.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein Step (1) uses trim-ethyl indium (TMIn), trimethyl aluminum (TMAl), trim-ethyl gallium (TMGa), and ammonia gas (NH₃) as precursor materials to grow the InAlGaN barrier layer.
The method for fabricating an InAlGaN/GaN heterostructure according to claim 1, wherein the InAlGaN barrier layer has a thickness of 3-5 nm. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials2 process steps
MOCVD process in a single reaction chamber: substrate (sapphire, SiC, or Si) is loaded; AlN nucleation layer, transitional layer, GaN buffer layer, AlN barrier intermediate layer, and InAlGaN barrier layer (3-5 nm, using TMIn, TMAl, TMGa, NH₃) are grown sequentially (Step S₁₀); then disilane (Si₂H₆) and NH₃ are filled into the chamber for 2-5 s at 950-1000°C, 5-8 sccm, <50 Torr to in-situ grow a SiNx protective layer on the InAlGaN barrier layer (Step S₂₀), yielding the in-situ SiNx/InAlGaN/GaN heterostructure.
Layer stacks claimed or described, ordered top of device to substrate.
InAlGaN/GaN HEMT with in-situ SiNx
Materials described outside the worked examples.
silane
SiH₄
trisilane
Si₃H₈
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 0–1001 seconds | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Cited non-patent literature · 3
Related documents with shared materials, methods, properties, or citations.
tetrasilane
Si₄H₁₀
tetraethoxysilane
TEOS
trimethyl indium
TMIn
trimethyl aluminum
TMAl
trimethyl gallium
TMGa
ammonia gas
NH₃
transitional layer
| — |
Duration | 2–5 seconds | — |
Temperature | 950–1000 °C | — |
Flow Rate | 5–8 sccm | — |
— | 0.34–0.51 eV | — |
Pressure | ≤ 50 Torr | — |
tetrasilane
Si₄H₁₀
tetraethoxysilane
TEOS
trimethyl indium
TMIn
trimethyl aluminum
TMAl
trimethyl gallium
TMGa
ammonia gas
NH₃
transitional layer
| — |
Duration | 2–5 seconds | — |
Temperature | 950–1000 °C | — |
Flow Rate | 5–8 sccm | — |
— | 0.34–0.51 eV | — |
Pressure | ≤ 50 Torr | — |
tetrasilane
Si₄H₁₀
tetraethoxysilane
TEOS
trimethyl indium
TMIn
trimethyl aluminum
TMAl
trimethyl gallium
TMGa
ammonia gas
NH₃
transitional layer
| — |
Duration | 2–5 seconds | — |
Temperature | 950–1000 °C | — |
Flow Rate | 5–8 sccm | — |
— | 0.34–0.51 eV | — |
Pressure | ≤ 50 Torr | — |
tetrasilane
Si₄H₁₀
tetraethoxysilane
TEOS
trimethyl indium
TMIn
trimethyl aluminum
TMAl
trimethyl gallium
TMGa
ammonia gas
NH₃
transitional layer
| — |
Duration | 2–5 seconds | — |
Temperature | 950–1000 °C | — |
Flow Rate | 5–8 sccm | — |
— | 0.34–0.51 eV | — |
Pressure | ≤ 50 Torr | — |