Patent
US 9,842,963G aN- base d L E) Epit axial Str uc ture and Prep a ration Method thereof
Houyong MA
US
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Patent
Atlas literature
Patent
US 9,842,963Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A preparation method of a GaN-based LED epitaxial structure, comprising steps of: step 1): providing a growth substrate and growing a non-doped GaN buffer layer, wherein the non-doped GaN buffer layer consists of a GaN layer, an AlGaN layer and a GaN layer which are sequentially stacked on the growth substrate; wherein a growth temperature range of the non-doped GaN buffer layer is 450-650 ° C and a total growth thickness range thereof is 15- 50 nm; step 2): sequentially growing an undoped GaN layer and an N-type GaN layer on the non-doped GaN buffer layer; wherein a growth temperature range of the undoped GaN layer and the N-type GaN layer is 1000-1200 ° C, a total growth thickness range thereof is 1.5-4.5 m, and an Si doping concentration range in the N-type GaN layer is le1 8-3e 19; step 3): growing an InGaN/GaN superlattice quantum well structure on the N-type GaN layer; step 4): growing a multiple quantum well luminous layer structure on the InGaN/GaN superlattice quantum well structure; step 5): sequentially growing an AlGaN layer, a low-temperature P-type layer and a P- type electron blocking layer on the multiple quantum well luminous layer structure; and step 6): growing a P-type GaN layer on the P-type electron blocking layer. Previously presented
The preparation method of claim 1, wherein in step 1), the thickness of the GaN layer, the AlGaN layer and the GaN layer in the non-doped GaN buffer layer is all the same, the thickness of any two layers is the same or the thickness of all three layers is all different. Original
The preparation method of claim 1, wherein in step 3), a growth temperature range of the InGaN/GaN superlattice quantum well structure is 700-900 °C. Original
The preparation method of claim 1, wherein in step 3), a number range of cycle logarithms in the InGaN/GaN superlattice quantum well structure is 3-30, an atomic ratio range of an In component in an InGaN potential well is 1-5%, a thickness range of the InGaN potential well is 1.0-4. O nm and a thickness range of a GaN potential ba rr ier is 1.0-9. O nm. Original
The preparation method of claim 1, wherein in step 4), a growth temperature range of the multiple quantum well luminous layer structure is 700-900 °C. Original
The preparation method of claim 1, wherein in step 4), a number range of potential ba rr ier-potential well cycle logarithms contained in the multiple quantum well luminous layer structure is 5-18, an atomic ratio range of an In component in an InGaN potential well is 15-20%, a thickness range of the InGaN potential well is 2.0-4. O nm and a thickness range of a GaN potential barrier is 3- 15 nm. Original
The preparation method of claim 1, wherein in step 4), growing an InGaN potential well comprises steps of: step 4-1): turning on a Ga source and growing InGaN, wherein a feed amount of TMIn is 100-300s c cm; step 4-2): turning off the Ga source, changing the feed amount of TMIn to be 3-5 times of the feed amount in step 4-1) and turning off TMIn after predetermined feed time; and step 4-3): turning on the Ga source and continuously growing InGaN, wherein the feed amount of TM I n is 100-300s c cm and the total thickness of the InGaN potential well after growth is 2.0-4. O nm. Original
The preparation method of claim 1, wherein in step 5), an atomic ratio range of an Al component in the AlGaN layer is 2-20% and a thickness range of the AlGaN layer is 20-35nm. Original
The preparation method of claim 1, wherein in step 5), the P-type electron blocking layer comprises one of P-type AlGaN, P-type Al I nGaN and P-type AlGaN/GaN superlattice structures, a total thickness range of the P-type electron blocking layer is 30-8 0 nm and an Mg doping concentration range in the P-type electron blocking layer is 5e 1 8-3.5e 19. Original
The preparation method of claim 1, wherein in step 6), an Mg doping concentration range in the P-type GaN layer is 5e 18-l e20 and a thickness range of the P-type GaN layer is 30- 150 nm. Original
Canceled
Canceled
A GaN-based LED epitaxial structure, comprising a non-doped GaN buffer layer, an undoped GaN layer, an N-type GaN layer, an InGaN/GaN superlattice quantum well structure, a multiple quantum well luminous layer structure, an AlGaN layer, a low-temperature P-type layer, a P-type electron blocking layer and a P-type GaN layer which are sequentially stacked, wherein the nondoped GaN buffer layer comprises a sandwich structure consisting of a GaN layer, an AlGaN layer and a GaN layer which are sequentially stacked. Original
The GaN-based LED epitaxial structure of claim 13, wherein the GaN-based LED epitaxial structure is formed on a growth substrate comprising one of sapphire, GaN, silicon and silicon carbide. Original
The GaN-based LED epitaxial structure of claim 13, wherein a total thickness range of the non-doped GaN buffer layer is 15-50nm. Original
The GaN-based LED epitaxial structure of claim 13, wherein the thickness of the GaN layer, the AlGaN layer and the GaN layer in the non-doped GaN buffer layer is all the same, the thickness of any two layers is the same or the thickness of all three layers is all different. Original
The GaN-based LED epitaxial structure of claim 13, wherein a total growth thickness range of the undoped GaN layer and the N-type GaN layer is 1.5- 4.5 um, and an Si doping concentration range in the N-type GaN layer is le1 8-3e 19. Original
The GaN-based LED epitaxial structure of claim 13, wherein a number range of cycle logarithms in the InGaN/GaN superlattice quantum well structure is 3- 30, an atomic ratio range of an In component in an InGaN potential well is 1-5%, a thickness range of the InGaN potential well is 1.0-4. O nm and a thickness range of a GaN potential barr ier is 1.0-9. O nm. Original
The GaN-based LED epitaxial structure of claim 13, wherein a number range of potential barrier-potential well cycle logarithms contained in the multiple quantum well luminous layer structure is 5-18, an atomic ratio range of an In component in an InGaN potential well is 15-20%, a thickness range of the InGaN potential well is 2.0- 4.O nm and a thickness range of a GaN potential ba rri er is 3- 15 nm. Original
The GaN-based LED epitaxial structure of claim 13, wherein an atomic ratio range of an Al component in the AlGaN layer is 2-20% and a thickness range of the AlGaN layer is 20-35nm. Original
The GaN-based LED epitaxial structure of claim 13, wherein the P- type electron blocking layer comprises one of P-type AlGaN, P-type AlInGaN and P-type AlGaN/GaN superlattice structures, a total thickness range of the P-type doping concentration range in the P-type electron
The GaN-based LED epitaxial structure of claim range in the P-type GaN layer is 5e 18-l e20 and 150 nm. Original
The GaN-based LED epitaxial structure of claim is the sandwich structure consisting of a GaN layer, sequentially stacked. New electron blocking layer is 30-8 0 nm and an Mg blocking layer is 5e 1 8-3.5e 19. Original 13, wherein an Mg doping concentration a thickness range of the P-type GaN layer is 30-13, wherein the non- doped GaN buffer layer an AlGaN layer and a GaN layer which are
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED epitaxial structure
Materials described outside the worked examples.
non-doped GaN buffer layer (GaN/AlGaN/GaN sandwich)
GaN/AlGaN/GaN
AlGaN layer (in buffer)
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 450–650 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,842,963Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A preparation method of a GaN-based LED epitaxial structure, comprising steps of: step 1): providing a growth substrate and growing a non-doped GaN buffer layer, wherein the non-doped GaN buffer layer consists of a GaN layer, an AlGaN layer and a GaN layer which are sequentially stacked on the growth substrate; wherein a growth temperature range of the non-doped GaN buffer layer is 450-650 ° C and a total growth thickness range thereof is 15- 50 nm; step 2): sequentially growing an undoped GaN layer and an N-type GaN layer on the non-doped GaN buffer layer; wherein a growth temperature range of the undoped GaN layer and the N-type GaN layer is 1000-1200 ° C, a total growth thickness range thereof is 1.5-4.5 m, and an Si doping concentration range in the N-type GaN layer is le1 8-3e 19; step 3): growing an InGaN/GaN superlattice quantum well structure on the N-type GaN layer; step 4): growing a multiple quantum well luminous layer structure on the InGaN/GaN superlattice quantum well structure; step 5): sequentially growing an AlGaN layer, a low-temperature P-type layer and a P- type electron blocking layer on the multiple quantum well luminous layer structure; and step 6): growing a P-type GaN layer on the P-type electron blocking layer. Previously presented
The preparation method of claim 1, wherein in step 1), the thickness of the GaN layer, the AlGaN layer and the GaN layer in the non-doped GaN buffer layer is all the same, the thickness of any two layers is the same or the thickness of all three layers is all different. Original
The preparation method of claim 1, wherein in step 3), a growth temperature range of the InGaN/GaN superlattice quantum well structure is 700-900 °C. Original
The preparation method of claim 1, wherein in step 3), a number range of cycle logarithms in the InGaN/GaN superlattice quantum well structure is 3-30, an atomic ratio range of an In component in an InGaN potential well is 1-5%, a thickness range of the InGaN potential well is 1.0-4. O nm and a thickness range of a GaN potential ba rr ier is 1.0-9. O nm. Original
The preparation method of claim 1, wherein in step 4), a growth temperature range of the multiple quantum well luminous layer structure is 700-900 °C. Original
The preparation method of claim 1, wherein in step 4), a number range of potential ba rr ier-potential well cycle logarithms contained in the multiple quantum well luminous layer structure is 5-18, an atomic ratio range of an In component in an InGaN potential well is 15-20%, a thickness range of the InGaN potential well is 2.0-4. O nm and a thickness range of a GaN potential barrier is 3- 15 nm. Original
The preparation method of claim 1, wherein in step 4), growing an InGaN potential well comprises steps of: step 4-1): turning on a Ga source and growing InGaN, wherein a feed amount of TMIn is 100-300s c cm; step 4-2): turning off the Ga source, changing the feed amount of TMIn to be 3-5 times of the feed amount in step 4-1) and turning off TMIn after predetermined feed time; and step 4-3): turning on the Ga source and continuously growing InGaN, wherein the feed amount of TM I n is 100-300s c cm and the total thickness of the InGaN potential well after growth is 2.0-4. O nm. Original
The preparation method of claim 1, wherein in step 5), an atomic ratio range of an Al component in the AlGaN layer is 2-20% and a thickness range of the AlGaN layer is 20-35nm. Original
The preparation method of claim 1, wherein in step 5), the P-type electron blocking layer comprises one of P-type AlGaN, P-type Al I nGaN and P-type AlGaN/GaN superlattice structures, a total thickness range of the P-type electron blocking layer is 30-8 0 nm and an Mg doping concentration range in the P-type electron blocking layer is 5e 1 8-3.5e 19. Original
The preparation method of claim 1, wherein in step 6), an Mg doping concentration range in the P-type GaN layer is 5e 18-l e20 and a thickness range of the P-type GaN layer is 30- 150 nm. Original
Canceled
Canceled
A GaN-based LED epitaxial structure, comprising a non-doped GaN buffer layer, an undoped GaN layer, an N-type GaN layer, an InGaN/GaN superlattice quantum well structure, a multiple quantum well luminous layer structure, an AlGaN layer, a low-temperature P-type layer, a P-type electron blocking layer and a P-type GaN layer which are sequentially stacked, wherein the nondoped GaN buffer layer comprises a sandwich structure consisting of a GaN layer, an AlGaN layer and a GaN layer which are sequentially stacked. Original
The GaN-based LED epitaxial structure of claim 13, wherein the GaN-based LED epitaxial structure is formed on a growth substrate comprising one of sapphire, GaN, silicon and silicon carbide. Original
The GaN-based LED epitaxial structure of claim 13, wherein a total thickness range of the non-doped GaN buffer layer is 15-50nm. Original
The GaN-based LED epitaxial structure of claim 13, wherein the thickness of the GaN layer, the AlGaN layer and the GaN layer in the non-doped GaN buffer layer is all the same, the thickness of any two layers is the same or the thickness of all three layers is all different. Original
The GaN-based LED epitaxial structure of claim 13, wherein a total growth thickness range of the undoped GaN layer and the N-type GaN layer is 1.5- 4.5 um, and an Si doping concentration range in the N-type GaN layer is le1 8-3e 19. Original
The GaN-based LED epitaxial structure of claim 13, wherein a number range of cycle logarithms in the InGaN/GaN superlattice quantum well structure is 3- 30, an atomic ratio range of an In component in an InGaN potential well is 1-5%, a thickness range of the InGaN potential well is 1.0-4. O nm and a thickness range of a GaN potential barr ier is 1.0-9. O nm. Original
The GaN-based LED epitaxial structure of claim 13, wherein a number range of potential barrier-potential well cycle logarithms contained in the multiple quantum well luminous layer structure is 5-18, an atomic ratio range of an In component in an InGaN potential well is 15-20%, a thickness range of the InGaN potential well is 2.0- 4.O nm and a thickness range of a GaN potential ba rri er is 3- 15 nm. Original
The GaN-based LED epitaxial structure of claim 13, wherein an atomic ratio range of an Al component in the AlGaN layer is 2-20% and a thickness range of the AlGaN layer is 20-35nm. Original
The GaN-based LED epitaxial structure of claim 13, wherein the P- type electron blocking layer comprises one of P-type AlGaN, P-type AlInGaN and P-type AlGaN/GaN superlattice structures, a total thickness range of the P-type doping concentration range in the P-type electron
The GaN-based LED epitaxial structure of claim range in the P-type GaN layer is 5e 18-l e20 and 150 nm. Original
The GaN-based LED epitaxial structure of claim is the sandwich structure consisting of a GaN layer, sequentially stacked. New electron blocking layer is 30-8 0 nm and an Mg blocking layer is 5e 1 8-3.5e 19. Original 13, wherein an Mg doping concentration a thickness range of the P-type GaN layer is 30-13, wherein the non- doped GaN buffer layer an AlGaN layer and a GaN layer which are
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED epitaxial structure
Materials described outside the worked examples.
non-doped GaN buffer layer (GaN/AlGaN/GaN sandwich)
GaN/AlGaN/GaN
AlGaN layer (in buffer)
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 450–650 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,842,963Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A preparation method of a GaN-based LED epitaxial structure, comprising steps of: step 1): providing a growth substrate and growing a non-doped GaN buffer layer, wherein the non-doped GaN buffer layer consists of a GaN layer, an AlGaN layer and a GaN layer which are sequentially stacked on the growth substrate; wherein a growth temperature range of the non-doped GaN buffer layer is 450-650 ° C and a total growth thickness range thereof is 15- 50 nm; step 2): sequentially growing an undoped GaN layer and an N-type GaN layer on the non-doped GaN buffer layer; wherein a growth temperature range of the undoped GaN layer and the N-type GaN layer is 1000-1200 ° C, a total growth thickness range thereof is 1.5-4.5 m, and an Si doping concentration range in the N-type GaN layer is le1 8-3e 19; step 3): growing an InGaN/GaN superlattice quantum well structure on the N-type GaN layer; step 4): growing a multiple quantum well luminous layer structure on the InGaN/GaN superlattice quantum well structure; step 5): sequentially growing an AlGaN layer, a low-temperature P-type layer and a P- type electron blocking layer on the multiple quantum well luminous layer structure; and step 6): growing a P-type GaN layer on the P-type electron blocking layer. Previously presented
The preparation method of claim 1, wherein in step 1), the thickness of the GaN layer, the AlGaN layer and the GaN layer in the non-doped GaN buffer layer is all the same, the thickness of any two layers is the same or the thickness of all three layers is all different. Original
The preparation method of claim 1, wherein in step 3), a growth temperature range of the InGaN/GaN superlattice quantum well structure is 700-900 °C. Original
The preparation method of claim 1, wherein in step 3), a number range of cycle logarithms in the InGaN/GaN superlattice quantum well structure is 3-30, an atomic ratio range of an In component in an InGaN potential well is 1-5%, a thickness range of the InGaN potential well is 1.0-4. O nm and a thickness range of a GaN potential ba rr ier is 1.0-9. O nm. Original
The preparation method of claim 1, wherein in step 4), a growth temperature range of the multiple quantum well luminous layer structure is 700-900 °C. Original
The preparation method of claim 1, wherein in step 4), a number range of potential ba rr ier-potential well cycle logarithms contained in the multiple quantum well luminous layer structure is 5-18, an atomic ratio range of an In component in an InGaN potential well is 15-20%, a thickness range of the InGaN potential well is 2.0-4. O nm and a thickness range of a GaN potential barrier is 3- 15 nm. Original
The preparation method of claim 1, wherein in step 4), growing an InGaN potential well comprises steps of: step 4-1): turning on a Ga source and growing InGaN, wherein a feed amount of TMIn is 100-300s c cm; step 4-2): turning off the Ga source, changing the feed amount of TMIn to be 3-5 times of the feed amount in step 4-1) and turning off TMIn after predetermined feed time; and step 4-3): turning on the Ga source and continuously growing InGaN, wherein the feed amount of TM I n is 100-300s c cm and the total thickness of the InGaN potential well after growth is 2.0-4. O nm. Original
The preparation method of claim 1, wherein in step 5), an atomic ratio range of an Al component in the AlGaN layer is 2-20% and a thickness range of the AlGaN layer is 20-35nm. Original
The preparation method of claim 1, wherein in step 5), the P-type electron blocking layer comprises one of P-type AlGaN, P-type Al I nGaN and P-type AlGaN/GaN superlattice structures, a total thickness range of the P-type electron blocking layer is 30-8 0 nm and an Mg doping concentration range in the P-type electron blocking layer is 5e 1 8-3.5e 19. Original
The preparation method of claim 1, wherein in step 6), an Mg doping concentration range in the P-type GaN layer is 5e 18-l e20 and a thickness range of the P-type GaN layer is 30- 150 nm. Original
Canceled
Canceled
A GaN-based LED epitaxial structure, comprising a non-doped GaN buffer layer, an undoped GaN layer, an N-type GaN layer, an InGaN/GaN superlattice quantum well structure, a multiple quantum well luminous layer structure, an AlGaN layer, a low-temperature P-type layer, a P-type electron blocking layer and a P-type GaN layer which are sequentially stacked, wherein the nondoped GaN buffer layer comprises a sandwich structure consisting of a GaN layer, an AlGaN layer and a GaN layer which are sequentially stacked. Original
The GaN-based LED epitaxial structure of claim 13, wherein the GaN-based LED epitaxial structure is formed on a growth substrate comprising one of sapphire, GaN, silicon and silicon carbide. Original
The GaN-based LED epitaxial structure of claim 13, wherein a total thickness range of the non-doped GaN buffer layer is 15-50nm. Original
The GaN-based LED epitaxial structure of claim 13, wherein the thickness of the GaN layer, the AlGaN layer and the GaN layer in the non-doped GaN buffer layer is all the same, the thickness of any two layers is the same or the thickness of all three layers is all different. Original
The GaN-based LED epitaxial structure of claim 13, wherein a total growth thickness range of the undoped GaN layer and the N-type GaN layer is 1.5- 4.5 um, and an Si doping concentration range in the N-type GaN layer is le1 8-3e 19. Original
The GaN-based LED epitaxial structure of claim 13, wherein a number range of cycle logarithms in the InGaN/GaN superlattice quantum well structure is 3- 30, an atomic ratio range of an In component in an InGaN potential well is 1-5%, a thickness range of the InGaN potential well is 1.0-4. O nm and a thickness range of a GaN potential barr ier is 1.0-9. O nm. Original
The GaN-based LED epitaxial structure of claim 13, wherein a number range of potential barrier-potential well cycle logarithms contained in the multiple quantum well luminous layer structure is 5-18, an atomic ratio range of an In component in an InGaN potential well is 15-20%, a thickness range of the InGaN potential well is 2.0- 4.O nm and a thickness range of a GaN potential ba rri er is 3- 15 nm. Original
The GaN-based LED epitaxial structure of claim 13, wherein an atomic ratio range of an Al component in the AlGaN layer is 2-20% and a thickness range of the AlGaN layer is 20-35nm. Original
The GaN-based LED epitaxial structure of claim 13, wherein the P- type electron blocking layer comprises one of P-type AlGaN, P-type AlInGaN and P-type AlGaN/GaN superlattice structures, a total thickness range of the P-type doping concentration range in the P-type electron
The GaN-based LED epitaxial structure of claim range in the P-type GaN layer is 5e 18-l e20 and 150 nm. Original
The GaN-based LED epitaxial structure of claim is the sandwich structure consisting of a GaN layer, sequentially stacked. New electron blocking layer is 30-8 0 nm and an Mg blocking layer is 5e 1 8-3.5e 19. Original 13, wherein an Mg doping concentration a thickness range of the P-type GaN layer is 30-13, wherein the non- doped GaN buffer layer an AlGaN layer and a GaN layer which are
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED epitaxial structure
Materials described outside the worked examples.
non-doped GaN buffer layer (GaN/AlGaN/GaN sandwich)
GaN/AlGaN/GaN
AlGaN layer (in buffer)
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 450–650 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,842,963Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A preparation method of a GaN-based LED epitaxial structure, comprising steps of: step 1): providing a growth substrate and growing a non-doped GaN buffer layer, wherein the non-doped GaN buffer layer consists of a GaN layer, an AlGaN layer and a GaN layer which are sequentially stacked on the growth substrate; wherein a growth temperature range of the non-doped GaN buffer layer is 450-650 ° C and a total growth thickness range thereof is 15- 50 nm; step 2): sequentially growing an undoped GaN layer and an N-type GaN layer on the non-doped GaN buffer layer; wherein a growth temperature range of the undoped GaN layer and the N-type GaN layer is 1000-1200 ° C, a total growth thickness range thereof is 1.5-4.5 m, and an Si doping concentration range in the N-type GaN layer is le1 8-3e 19; step 3): growing an InGaN/GaN superlattice quantum well structure on the N-type GaN layer; step 4): growing a multiple quantum well luminous layer structure on the InGaN/GaN superlattice quantum well structure; step 5): sequentially growing an AlGaN layer, a low-temperature P-type layer and a P- type electron blocking layer on the multiple quantum well luminous layer structure; and step 6): growing a P-type GaN layer on the P-type electron blocking layer. Previously presented
The preparation method of claim 1, wherein in step 1), the thickness of the GaN layer, the AlGaN layer and the GaN layer in the non-doped GaN buffer layer is all the same, the thickness of any two layers is the same or the thickness of all three layers is all different. Original
The preparation method of claim 1, wherein in step 3), a growth temperature range of the InGaN/GaN superlattice quantum well structure is 700-900 °C. Original
The preparation method of claim 1, wherein in step 3), a number range of cycle logarithms in the InGaN/GaN superlattice quantum well structure is 3-30, an atomic ratio range of an In component in an InGaN potential well is 1-5%, a thickness range of the InGaN potential well is 1.0-4. O nm and a thickness range of a GaN potential ba rr ier is 1.0-9. O nm. Original
The preparation method of claim 1, wherein in step 4), a growth temperature range of the multiple quantum well luminous layer structure is 700-900 °C. Original
The preparation method of claim 1, wherein in step 4), a number range of potential ba rr ier-potential well cycle logarithms contained in the multiple quantum well luminous layer structure is 5-18, an atomic ratio range of an In component in an InGaN potential well is 15-20%, a thickness range of the InGaN potential well is 2.0-4. O nm and a thickness range of a GaN potential barrier is 3- 15 nm. Original
The preparation method of claim 1, wherein in step 4), growing an InGaN potential well comprises steps of: step 4-1): turning on a Ga source and growing InGaN, wherein a feed amount of TMIn is 100-300s c cm; step 4-2): turning off the Ga source, changing the feed amount of TMIn to be 3-5 times of the feed amount in step 4-1) and turning off TMIn after predetermined feed time; and step 4-3): turning on the Ga source and continuously growing InGaN, wherein the feed amount of TM I n is 100-300s c cm and the total thickness of the InGaN potential well after growth is 2.0-4. O nm. Original
The preparation method of claim 1, wherein in step 5), an atomic ratio range of an Al component in the AlGaN layer is 2-20% and a thickness range of the AlGaN layer is 20-35nm. Original
The preparation method of claim 1, wherein in step 5), the P-type electron blocking layer comprises one of P-type AlGaN, P-type Al I nGaN and P-type AlGaN/GaN superlattice structures, a total thickness range of the P-type electron blocking layer is 30-8 0 nm and an Mg doping concentration range in the P-type electron blocking layer is 5e 1 8-3.5e 19. Original
The preparation method of claim 1, wherein in step 6), an Mg doping concentration range in the P-type GaN layer is 5e 18-l e20 and a thickness range of the P-type GaN layer is 30- 150 nm. Original
Canceled
Canceled
A GaN-based LED epitaxial structure, comprising a non-doped GaN buffer layer, an undoped GaN layer, an N-type GaN layer, an InGaN/GaN superlattice quantum well structure, a multiple quantum well luminous layer structure, an AlGaN layer, a low-temperature P-type layer, a P-type electron blocking layer and a P-type GaN layer which are sequentially stacked, wherein the nondoped GaN buffer layer comprises a sandwich structure consisting of a GaN layer, an AlGaN layer and a GaN layer which are sequentially stacked. Original
The GaN-based LED epitaxial structure of claim 13, wherein the GaN-based LED epitaxial structure is formed on a growth substrate comprising one of sapphire, GaN, silicon and silicon carbide. Original
The GaN-based LED epitaxial structure of claim 13, wherein a total thickness range of the non-doped GaN buffer layer is 15-50nm. Original
The GaN-based LED epitaxial structure of claim 13, wherein the thickness of the GaN layer, the AlGaN layer and the GaN layer in the non-doped GaN buffer layer is all the same, the thickness of any two layers is the same or the thickness of all three layers is all different. Original
The GaN-based LED epitaxial structure of claim 13, wherein a total growth thickness range of the undoped GaN layer and the N-type GaN layer is 1.5- 4.5 um, and an Si doping concentration range in the N-type GaN layer is le1 8-3e 19. Original
The GaN-based LED epitaxial structure of claim 13, wherein a number range of cycle logarithms in the InGaN/GaN superlattice quantum well structure is 3- 30, an atomic ratio range of an In component in an InGaN potential well is 1-5%, a thickness range of the InGaN potential well is 1.0-4. O nm and a thickness range of a GaN potential barr ier is 1.0-9. O nm. Original
The GaN-based LED epitaxial structure of claim 13, wherein a number range of potential barrier-potential well cycle logarithms contained in the multiple quantum well luminous layer structure is 5-18, an atomic ratio range of an In component in an InGaN potential well is 15-20%, a thickness range of the InGaN potential well is 2.0- 4.O nm and a thickness range of a GaN potential ba rri er is 3- 15 nm. Original
The GaN-based LED epitaxial structure of claim 13, wherein an atomic ratio range of an Al component in the AlGaN layer is 2-20% and a thickness range of the AlGaN layer is 20-35nm. Original
The GaN-based LED epitaxial structure of claim 13, wherein the P- type electron blocking layer comprises one of P-type AlGaN, P-type AlInGaN and P-type AlGaN/GaN superlattice structures, a total thickness range of the P-type doping concentration range in the P-type electron
The GaN-based LED epitaxial structure of claim range in the P-type GaN layer is 5e 18-l e20 and 150 nm. Original
The GaN-based LED epitaxial structure of claim is the sandwich structure consisting of a GaN layer, sequentially stacked. New electron blocking layer is 30-8 0 nm and an Mg blocking layer is 5e 1 8-3.5e 19. Original 13, wherein an Mg doping concentration a thickness range of the P-type GaN layer is 30-13, wherein the non- doped GaN buffer layer an AlGaN layer and a GaN layer which are
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED epitaxial structure
Materials described outside the worked examples.
non-doped GaN buffer layer (GaN/AlGaN/GaN sandwich)
GaN/AlGaN/GaN
AlGaN layer (in buffer)
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 450–650 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
N-type GaN layer (including undoped GaN layer)
GaN
InGaN/GaN superlattice quantum well structure
InGaN/GaN
low-temperature P-type layer
P-type electron blocking layer
P-type GaN layer
GaN:Mg
growth substrate
| — |
Temperature | 1000–1200 °C | — |
Temperature | 700–900 °C | — |
Thickness | 3–15 nm | — |
Thickness | 20–35 nm | — |
Thickness | 30–150 nm | — |
Thickness | 1.5–4.5 um | — |
Thickness | 5 -4.5um. | — |
Thickness | 30–80 nm | — |
Thickness | 0–9 nm | — |
N-type GaN layer (including undoped GaN layer)
GaN
InGaN/GaN superlattice quantum well structure
InGaN/GaN
low-temperature P-type layer
P-type electron blocking layer
P-type GaN layer
GaN:Mg
growth substrate
| — |
Temperature | 1000–1200 °C | — |
Temperature | 700–900 °C | — |
Thickness | 3–15 nm | — |
Thickness | 20–35 nm | — |
Thickness | 30–150 nm | — |
Thickness | 1.5–4.5 um | — |
Thickness | 5 -4.5um. | — |
Thickness | 30–80 nm | — |
Thickness | 0–9 nm | — |
N-type GaN layer (including undoped GaN layer)
GaN
InGaN/GaN superlattice quantum well structure
InGaN/GaN
low-temperature P-type layer
P-type electron blocking layer
P-type GaN layer
GaN:Mg
growth substrate
| — |
Temperature | 1000–1200 °C | — |
Temperature | 700–900 °C | — |
Thickness | 3–15 nm | — |
Thickness | 20–35 nm | — |
Thickness | 30–150 nm | — |
Thickness | 1.5–4.5 um | — |
Thickness | 5 -4.5um. | — |
Thickness | 30–80 nm | — |
Thickness | 0–9 nm | — |
N-type GaN layer (including undoped GaN layer)
GaN
InGaN/GaN superlattice quantum well structure
InGaN/GaN
low-temperature P-type layer
P-type electron blocking layer
P-type GaN layer
GaN:Mg
growth substrate
| — |
Temperature | 1000–1200 °C | — |
Temperature | 700–900 °C | — |
Thickness | 3–15 nm | — |
Thickness | 20–35 nm | — |
Thickness | 30–150 nm | — |
Thickness | 1.5–4.5 um | — |
Thickness | 5 -4.5um. | — |
Thickness | 30–80 nm | — |
Thickness | 0–9 nm | — |