Patent
US 9,449,815METHOD OF GROWING GALLIUM NITRIDE BASED SEMICONDUCTOR LAYERS AND METHOD OF FABRICATING LIGHT EMITTING DEVICE THEREWITH
Seung Kyu CHOI
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,449,815Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic sectional view of a semiconductor device in accordance with one embodiment of the present invention. [0020]
FIG. 2, the superlattice layer 25 has a lam in ated structure m which a first gal li um nitri de layer 25a and a second gal li um nitri de layer 25b are …
FIG. 3, the active layer 27 may have a multi-quantum well structure in which a plura li ty of bar ri er layers 27b and a plura li ty of well layers 27w are …
FIG. 4 is a graph schematically depicting chamber pressure versus processing time in fabrication of a semiconductor device. is DETAILED DESCRIPTION OF THE …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing gallium nitride-based semiconductor layers through metal-organic chemical vapor deposition, the method comprising: disposing a substrate in a chamber; growing a first conductivity-type gallium nitride-based semiconductor layer on the substrate at a first chamber pressure that is more than 100 Torr and less than or equal to 300 Torr; growing a superlattice layer directly on the first conductivity-type gallium nitride-based semiconductor layer, and growing the superlattice layer comprises: forming a indium gallium nitride layer at a fourth chamber pressure that is higher than the first chamber pressure and at a first superlattice growth temperature; and forming a gallium nitride layer at the fourth chamber pressure and at a second superlattice growth temperature that is within 10 0C of the first superlattice growth temperature; growing a gallium nitride-based active layer on the first conductivity-type gallium nitride- based semiconductor layer at a second chamber pressure that is higher than the first chamber pressure, and growing the gallium nitride-based active layer comprises: growing barrier layers at the second chamber pressure and at a first active layer growth temperature; and growing well layers at the second chamber pressure and at a second active layer growth temperature that is within 10 ° C of the first active layer growth temperature; and --4-- Application No.: 14/056,664 Amendment After Allowance dated growing a second conductivity-type gallium nitride-based semiconductor layer on the active layer at a third chamber pressure that is lower than the second chamber pressure, wherein the second and third chamber pressures are lower than 760 Torr.
The method of claim 1, wherein the second chamber pressure is in the range of 300 Torr to 700 Torr.
The method of claim 1, wherein the well layers comprise In-containing gallium nitride layers, and the barrier layers comprise gallium nitride layers having a wider band gap than the well layers.
The method of claim 1, wherein the first superlattice growth temperature and the second superlattice growth temperature are about the same.
The method of claim 1, wherein the first active layer --5-- Application No.: 14/056,664 Amendment After Allowance dated growth temperature and the second active layer growth temperature are about the same.
The method of claim 1, wherein growing the active layer comprises supplying an N 2 atmosphere gas, together with source gases of In, Ga, and N, into the chamber while the active layer is grown, and blocking the supply of H 2 gas.
The method of claim 1, further comprising growing a gallium nitride-based electron blocking layer at a chamber pressure in the range of 100 Torr to 300 Torr before growing the second conductivity-type semiconductor layer.
. canceled
. canceled
10 and 11. canceled
13-19. canceled
2 1-27. canceled
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based light emitting device (LED)
Materials described outside the worked examples.
first conductivity-type gallium nitride-based semiconductor layer
indium gallium nitride well layer
InGaN
gallium nitride barrier layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 300–700 Torr | — |
Pressure | 100–300 Torr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,449,815Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic sectional view of a semiconductor device in accordance with one embodiment of the present invention. [0020]
FIG. 2, the superlattice layer 25 has a lam in ated structure m which a first gal li um nitri de layer 25a and a second gal li um nitri de layer 25b are …
FIG. 3, the active layer 27 may have a multi-quantum well structure in which a plura li ty of bar ri er layers 27b and a plura li ty of well layers 27w are …
FIG. 4 is a graph schematically depicting chamber pressure versus processing time in fabrication of a semiconductor device. is DETAILED DESCRIPTION OF THE …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing gallium nitride-based semiconductor layers through metal-organic chemical vapor deposition, the method comprising: disposing a substrate in a chamber; growing a first conductivity-type gallium nitride-based semiconductor layer on the substrate at a first chamber pressure that is more than 100 Torr and less than or equal to 300 Torr; growing a superlattice layer directly on the first conductivity-type gallium nitride-based semiconductor layer, and growing the superlattice layer comprises: forming a indium gallium nitride layer at a fourth chamber pressure that is higher than the first chamber pressure and at a first superlattice growth temperature; and forming a gallium nitride layer at the fourth chamber pressure and at a second superlattice growth temperature that is within 10 0C of the first superlattice growth temperature; growing a gallium nitride-based active layer on the first conductivity-type gallium nitride- based semiconductor layer at a second chamber pressure that is higher than the first chamber pressure, and growing the gallium nitride-based active layer comprises: growing barrier layers at the second chamber pressure and at a first active layer growth temperature; and growing well layers at the second chamber pressure and at a second active layer growth temperature that is within 10 ° C of the first active layer growth temperature; and --4-- Application No.: 14/056,664 Amendment After Allowance dated growing a second conductivity-type gallium nitride-based semiconductor layer on the active layer at a third chamber pressure that is lower than the second chamber pressure, wherein the second and third chamber pressures are lower than 760 Torr.
The method of claim 1, wherein the second chamber pressure is in the range of 300 Torr to 700 Torr.
The method of claim 1, wherein the well layers comprise In-containing gallium nitride layers, and the barrier layers comprise gallium nitride layers having a wider band gap than the well layers.
The method of claim 1, wherein the first superlattice growth temperature and the second superlattice growth temperature are about the same.
The method of claim 1, wherein the first active layer --5-- Application No.: 14/056,664 Amendment After Allowance dated growth temperature and the second active layer growth temperature are about the same.
The method of claim 1, wherein growing the active layer comprises supplying an N 2 atmosphere gas, together with source gases of In, Ga, and N, into the chamber while the active layer is grown, and blocking the supply of H 2 gas.
The method of claim 1, further comprising growing a gallium nitride-based electron blocking layer at a chamber pressure in the range of 100 Torr to 300 Torr before growing the second conductivity-type semiconductor layer.
. canceled
. canceled
10 and 11. canceled
13-19. canceled
2 1-27. canceled
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based light emitting device (LED)
Materials described outside the worked examples.
first conductivity-type gallium nitride-based semiconductor layer
indium gallium nitride well layer
InGaN
gallium nitride barrier layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 300–700 Torr | — |
Pressure | 100–300 Torr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,449,815Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic sectional view of a semiconductor device in accordance with one embodiment of the present invention. [0020]
FIG. 2, the superlattice layer 25 has a lam in ated structure m which a first gal li um nitri de layer 25a and a second gal li um nitri de layer 25b are …
FIG. 3, the active layer 27 may have a multi-quantum well structure in which a plura li ty of bar ri er layers 27b and a plura li ty of well layers 27w are …
FIG. 4 is a graph schematically depicting chamber pressure versus processing time in fabrication of a semiconductor device. is DETAILED DESCRIPTION OF THE …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing gallium nitride-based semiconductor layers through metal-organic chemical vapor deposition, the method comprising: disposing a substrate in a chamber; growing a first conductivity-type gallium nitride-based semiconductor layer on the substrate at a first chamber pressure that is more than 100 Torr and less than or equal to 300 Torr; growing a superlattice layer directly on the first conductivity-type gallium nitride-based semiconductor layer, and growing the superlattice layer comprises: forming a indium gallium nitride layer at a fourth chamber pressure that is higher than the first chamber pressure and at a first superlattice growth temperature; and forming a gallium nitride layer at the fourth chamber pressure and at a second superlattice growth temperature that is within 10 0C of the first superlattice growth temperature; growing a gallium nitride-based active layer on the first conductivity-type gallium nitride- based semiconductor layer at a second chamber pressure that is higher than the first chamber pressure, and growing the gallium nitride-based active layer comprises: growing barrier layers at the second chamber pressure and at a first active layer growth temperature; and growing well layers at the second chamber pressure and at a second active layer growth temperature that is within 10 ° C of the first active layer growth temperature; and --4-- Application No.: 14/056,664 Amendment After Allowance dated growing a second conductivity-type gallium nitride-based semiconductor layer on the active layer at a third chamber pressure that is lower than the second chamber pressure, wherein the second and third chamber pressures are lower than 760 Torr.
The method of claim 1, wherein the second chamber pressure is in the range of 300 Torr to 700 Torr.
The method of claim 1, wherein the well layers comprise In-containing gallium nitride layers, and the barrier layers comprise gallium nitride layers having a wider band gap than the well layers.
The method of claim 1, wherein the first superlattice growth temperature and the second superlattice growth temperature are about the same.
The method of claim 1, wherein the first active layer --5-- Application No.: 14/056,664 Amendment After Allowance dated growth temperature and the second active layer growth temperature are about the same.
The method of claim 1, wherein growing the active layer comprises supplying an N 2 atmosphere gas, together with source gases of In, Ga, and N, into the chamber while the active layer is grown, and blocking the supply of H 2 gas.
The method of claim 1, further comprising growing a gallium nitride-based electron blocking layer at a chamber pressure in the range of 100 Torr to 300 Torr before growing the second conductivity-type semiconductor layer.
. canceled
. canceled
10 and 11. canceled
13-19. canceled
2 1-27. canceled
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based light emitting device (LED)
Materials described outside the worked examples.
first conductivity-type gallium nitride-based semiconductor layer
indium gallium nitride well layer
InGaN
gallium nitride barrier layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 300–700 Torr | — |
Pressure | 100–300 Torr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,449,815Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic sectional view of a semiconductor device in accordance with one embodiment of the present invention. [0020]
FIG. 2, the superlattice layer 25 has a lam in ated structure m which a first gal li um nitri de layer 25a and a second gal li um nitri de layer 25b are …
FIG. 3, the active layer 27 may have a multi-quantum well structure in which a plura li ty of bar ri er layers 27b and a plura li ty of well layers 27w are …
FIG. 4 is a graph schematically depicting chamber pressure versus processing time in fabrication of a semiconductor device. is DETAILED DESCRIPTION OF THE …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing gallium nitride-based semiconductor layers through metal-organic chemical vapor deposition, the method comprising: disposing a substrate in a chamber; growing a first conductivity-type gallium nitride-based semiconductor layer on the substrate at a first chamber pressure that is more than 100 Torr and less than or equal to 300 Torr; growing a superlattice layer directly on the first conductivity-type gallium nitride-based semiconductor layer, and growing the superlattice layer comprises: forming a indium gallium nitride layer at a fourth chamber pressure that is higher than the first chamber pressure and at a first superlattice growth temperature; and forming a gallium nitride layer at the fourth chamber pressure and at a second superlattice growth temperature that is within 10 0C of the first superlattice growth temperature; growing a gallium nitride-based active layer on the first conductivity-type gallium nitride- based semiconductor layer at a second chamber pressure that is higher than the first chamber pressure, and growing the gallium nitride-based active layer comprises: growing barrier layers at the second chamber pressure and at a first active layer growth temperature; and growing well layers at the second chamber pressure and at a second active layer growth temperature that is within 10 ° C of the first active layer growth temperature; and --4-- Application No.: 14/056,664 Amendment After Allowance dated growing a second conductivity-type gallium nitride-based semiconductor layer on the active layer at a third chamber pressure that is lower than the second chamber pressure, wherein the second and third chamber pressures are lower than 760 Torr.
The method of claim 1, wherein the second chamber pressure is in the range of 300 Torr to 700 Torr.
The method of claim 1, wherein the well layers comprise In-containing gallium nitride layers, and the barrier layers comprise gallium nitride layers having a wider band gap than the well layers.
The method of claim 1, wherein the first superlattice growth temperature and the second superlattice growth temperature are about the same.
The method of claim 1, wherein the first active layer --5-- Application No.: 14/056,664 Amendment After Allowance dated growth temperature and the second active layer growth temperature are about the same.
The method of claim 1, wherein growing the active layer comprises supplying an N 2 atmosphere gas, together with source gases of In, Ga, and N, into the chamber while the active layer is grown, and blocking the supply of H 2 gas.
The method of claim 1, further comprising growing a gallium nitride-based electron blocking layer at a chamber pressure in the range of 100 Torr to 300 Torr before growing the second conductivity-type semiconductor layer.
. canceled
. canceled
10 and 11. canceled
13-19. canceled
2 1-27. canceled
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based light emitting device (LED)
Materials described outside the worked examples.
first conductivity-type gallium nitride-based semiconductor layer
indium gallium nitride well layer
InGaN
gallium nitride barrier layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 300–700 Torr | — |
Pressure | 100–300 Torr |
Related documents with shared materials, methods, properties, or citations.
second conductivity-type gallium nitride-based semiconductor layer
gallium nitride-based electron blocking layer
silicon-doped superlattice layer uppermost layer
| — |
Pressure | ≥ 1 Torr | — |
LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS
second conductivity-type gallium nitride-based semiconductor layer
gallium nitride-based electron blocking layer
silicon-doped superlattice layer uppermost layer
| — |
Pressure | ≥ 1 Torr | — |
LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS
second conductivity-type gallium nitride-based semiconductor layer
gallium nitride-based electron blocking layer
silicon-doped superlattice layer uppermost layer
| — |
Pressure | ≥ 1 Torr | — |
LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS
second conductivity-type gallium nitride-based semiconductor layer
gallium nitride-based electron blocking layer
silicon-doped superlattice layer uppermost layer
| — |
Pressure | ≥ 1 Torr | — |