Patent
US 10,381,517AlGaInP-Based Light-Emitting Diode Having GaN Layer for Improved Light Extraction Efficiency
Hyung Joo LEE
US
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Patent
Atlas literature
Patent
US 10,381,517Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An A lGaI nP-based light-emitting diode having both an electrode and an uppermost layer around the electrode directly upon an upper surface of the GaP window layer, wherein the uppermost layer is a rough GaN layer, and wherein both the electrode and the uppermost layer around the electrode directly contact and are on the upper surface of the GaP window la y er. Currently amended
The A lGaI nP-based light-emitting diode of claim 1, wherein the GaP window layer is a p-type GaP window layer. Previously presented
A method for fabricating an A lGaI nP-based light-emitting diode of claim 1, comprising the steps of: growing a first-type A lGaI nP-based semiconductor layer, an active layer and a second-type A lGaI nP-based semiconductor layer on a substrate; growing a GaP window layer on the second-type A lGaI nP-based semiconductor layer; and growing a GaN layer on a surface of the GaP window layer. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
AlGaInP-based light-emitting diode with rough GaN layer
Materials described outside the worked examples.
rough GaN layer
GaN
GaP window layer
GaP
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Refractive Index | 2.5 | GaN |
Refractive Index |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,381,517Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An A lGaI nP-based light-emitting diode having both an electrode and an uppermost layer around the electrode directly upon an upper surface of the GaP window layer, wherein the uppermost layer is a rough GaN layer, and wherein both the electrode and the uppermost layer around the electrode directly contact and are on the upper surface of the GaP window la y er. Currently amended
The A lGaI nP-based light-emitting diode of claim 1, wherein the GaP window layer is a p-type GaP window layer. Previously presented
A method for fabricating an A lGaI nP-based light-emitting diode of claim 1, comprising the steps of: growing a first-type A lGaI nP-based semiconductor layer, an active layer and a second-type A lGaI nP-based semiconductor layer on a substrate; growing a GaP window layer on the second-type A lGaI nP-based semiconductor layer; and growing a GaN layer on a surface of the GaP window layer. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
AlGaInP-based light-emitting diode with rough GaN layer
Materials described outside the worked examples.
rough GaN layer
GaN
GaP window layer
GaP
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Refractive Index | 2.5 | GaN |
Refractive Index |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,381,517Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An A lGaI nP-based light-emitting diode having both an electrode and an uppermost layer around the electrode directly upon an upper surface of the GaP window layer, wherein the uppermost layer is a rough GaN layer, and wherein both the electrode and the uppermost layer around the electrode directly contact and are on the upper surface of the GaP window la y er. Currently amended
The A lGaI nP-based light-emitting diode of claim 1, wherein the GaP window layer is a p-type GaP window layer. Previously presented
A method for fabricating an A lGaI nP-based light-emitting diode of claim 1, comprising the steps of: growing a first-type A lGaI nP-based semiconductor layer, an active layer and a second-type A lGaI nP-based semiconductor layer on a substrate; growing a GaP window layer on the second-type A lGaI nP-based semiconductor layer; and growing a GaN layer on a surface of the GaP window layer. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
AlGaInP-based light-emitting diode with rough GaN layer
Materials described outside the worked examples.
rough GaN layer
GaN
GaP window layer
GaP
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Refractive Index | 2.5 | GaN |
Refractive Index |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,381,517Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An A lGaI nP-based light-emitting diode having both an electrode and an uppermost layer around the electrode directly upon an upper surface of the GaP window layer, wherein the uppermost layer is a rough GaN layer, and wherein both the electrode and the uppermost layer around the electrode directly contact and are on the upper surface of the GaP window la y er. Currently amended
The A lGaI nP-based light-emitting diode of claim 1, wherein the GaP window layer is a p-type GaP window layer. Previously presented
A method for fabricating an A lGaI nP-based light-emitting diode of claim 1, comprising the steps of: growing a first-type A lGaI nP-based semiconductor layer, an active layer and a second-type A lGaI nP-based semiconductor layer on a substrate; growing a GaP window layer on the second-type A lGaI nP-based semiconductor layer; and growing a GaN layer on a surface of the GaP window layer. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
AlGaInP-based light-emitting diode with rough GaN layer
Materials described outside the worked examples.
rough GaN layer
GaN
GaP window layer
GaP
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Refractive Index | 2.5 | GaN |
Refractive Index |
Related documents with shared materials, methods, properties, or citations.
AlGaInP-based semiconductor
AlGaInP
DBR layer
AlGaInP |
Thickness | 100–2000 nm | — |
LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS
AlGaInP-based semiconductor
AlGaInP
DBR layer
AlGaInP |
Thickness | 100–2000 nm | — |
LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS
AlGaInP-based semiconductor
AlGaInP
DBR layer
AlGaInP |
Thickness | 100–2000 nm | — |
LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS
AlGaInP-based semiconductor
AlGaInP
DBR layer
AlGaInP |
Thickness | 100–2000 nm | — |