INTEGRATION OF CURRENT BLOCKING LAYER AND n-GaN CONTACT DOPING BY IMPLANTATION

Tao Jiang

Patent

Atlas literature

Patent

US 8,603,847

INTEGRATION OF CURRENT BLOCKING LAYER AND n-GaN CONTACT DOPING BY IMPLANTATION

Tao Jiang, Chi-Chun Chen

2013-12-10·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 14 dependent

1
Independentn-type layermulti-quantum well (MQW)p-type layerlight emitting diode (LED)
A method of fabricating a light emitting diode (LED), 5 comprising: creating a structure having a n-type layer, a multi- quantum well (MQW) on said n-type layer, and a p- type layer on said MQW, where a portion of said n- type layer is exposed; 10 simultaneously selectively implanting ions into a ﬁrst region of said p-type layer to reduce conductivity in said ﬁrst region and into a second region of said n-type layer to increase conductivity in said second region; 15 applying a p electrode to said p-type layer; and applying an n electrode to said portion of said n- type layer.
1. 2
  Dependent← claim 1n-type dopant ions
  The method of claim 1, wherein said ions comprise an n-type dopant.
2. 4
  Dependent← claim 1light emitting diode (LED)
  The method of claim 1, wherein said creating step comprises: growing said n-type layer on a substrate; 25 growing said MQW on said n-type layer; growing said p-type layer on said MQW; disposing a mask on said p-type layer that deﬁnes an opening conﬁgured to leave a portion of said p- type layer exposed; 30 performing an etching process of said portion of said p-type layer, such that said portion of said p- 10 type layer and said MQW beneath said portion of said p-type layer are removed, thereby exposing said portion of said n-type layer.
3. 5
  Dependent← claim 1
  The method of claim 1, wherein said LED comprises a 5 vertical sidewall, and said method further comprises disposing a mask on said vertical sidewall prior to said selective implanting.
4. 6
  Dependent← claim 1transparent coating layer
  The method of claim 1, further comprising depositing a transparent coating layer on a top surface of said LED 10 prior to applying said p electrode and said n electrode.
5. 7
  Dependent← claim 1
  The method of claim 1, further comprising performing an anneal cycle after said selectively implanting said ions into said ﬁrst region and said second region.
8
Independentn-type layermulti-quantum well (MQW)p-type layerlight emitting diode (LED)
15 8. A light emitting diode, comprising: a structure having a n-type layer, a multi-quantum well (MQW) on said n-type layer, and a p-type layer on said MQW, where a portion of said n-type layer is exposed; 20 a p electrode on said p-type layer; an n electrode on said portion of said n-type layer; a region of reduced conductivity disposed in said p- type layer beneath said p electrode; and a region of increased conductivity disposed in said 25 portion of said n-type layer beneath said n electrode; wherein said region of reduced conductivity and said region of increased conductivity both comprise one species of implanted ions.
1. 9
  Dependent← claim 8Si
  30 9. The light emitting diode of claim 8, wherein said one species comprises silicon.
2. 10
  Dependent← claim 8transparent coating layer
  The light emitting diode of claim 8, further comprising a transparent coating layer disposed on a top surface of said light emitting diode beneath said p electrode and said n electrode.
11
Independentn-type layermulti-quantum well (MQW)p-type layerlight emitting diode (LED)
5 11. A light emitting diode made by a process comprising: creating a structure having a n-type layer, a multi- quantum well (MQW) on said n-type layer, and a p- type layer on said MQW, where a portion of said n- type layer is exposed; 10 simultaneously selectively implanting ions into a ﬁrst region of said p-type layer to reduce conductivity in said ﬁrst region and into a second region of said n-type layer to increase conductivity in said second region; 15 applying a p electrode to said p-type layer; and applying an n electrode to said portion of said n- type layer.
1. 12
  Dependent← claim 11n-type dopant ions
  The light emitting diode of claim 11, wherein said ions comprise an n-type dopant.
2. 14
  Dependent← claim 11light emitting diode (LED)
  The light emitting diode of claim 11, wherein said creating step comprises: growing said n-type layer on a substrate; 25 growing said MQW on said n-type layer; growing said p-type layer on said MQW; disposing a mask on said p-type layer that deﬁnes an opening conﬁgured to leave a portion of said p- type layer exposed; 30 performing an etching process of said portion of said p-type layer, such that said portion of said p- 12 type layer and said MQW beneath said portion of said p-type layer are removed, thereby exposing said portion of said n-type layer.
3. 15
  Dependent← claim 11
  The light emitting diode of claim 11, wherein said LED 5 comprises a vertical sidewall, and said process further comprises disposing a mask on said vertical sidewall prior to said selective implanting.
4. 16
  Dependent← claim 11transparent coating layer
  The light emitting diode of claim 11, wherein said process further comprises depositing a transparent 10 coating layer on a top surface of said light emitting diode prior to applying said p electrode and said n electrode.
5. 17
  Dependent← claim 11
  The light emitting diode of claim 11, wherein said process further comprises performing an anneal cycle 15 after said selectively implanting said ions into said ﬁrst region and said second region.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

light emitting diode (LED)

p-type layerp-type layer

multi-quantum well (MQW)multi-quantum well active layer

n-type layern-type layer

Materials

Materials described outside the worked examples.

n-type layer

N-Type Semiconductor Layer In LED Structure

multi-quantum well (MQW)

Active Light-Emitting Layer In LED Structure

Why these are connected

Related documents with shared materials, methods, properties, or citations.

INTEGRATION OF CURRENT BLOCKING LAYER AND n-GaN CONTACT DOPING BY IMPLANTATION | Matter42 Literature