Patent
US 8,796,054GALLIUM NITRIDE TO SILICON DIRECT WAFER BONDING
Alexander Usenko
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,796,054Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a hybrid semiconducto i structure, said method comprising: SVG 13484542.01-17-2014.HQJRZUYOPXXIFW3.CLM11438541.9.444.1039.1890.1115.svg 0.253 4.82 Chemistry Black and white exposing the si li con surface and the nitride su i face to an ammonia-containing plasma to form plasma-treated surfaces; and exposing the plasma-treated surfaces to molecular ammonia to form respective ammonia-treated surfaces; join ing the am m onia- tr eated silicon surface and the ammonia-treated nitride surface to form an intermediate bonding structure; and annealing the intermediate bonding structure to form a bonded hybrid semiconductor st r ucture having a bonding interface between the silicon su r face and the nitride surface. 2 (Origina l) The method acco i ding to claim 1, wherein the nitride surface comprises gallium ni tride.
The method according to claim 1, wherein the ammonia-treated surfaces comprise ammo ni a radicals.
The method according to claim 1, where in the ammo ni a-treated surfaces comprise molecular ammo nia.
The method according to claim 1, wherein the ammonia- ti eated s ui faces comprise a mmni onia radicals in contact with each su i face to be bonded and molecular ammonia in contact with the ammo ni a radicals. 2 App li cation No.. 13/484, 542 Office Action dated- previously presented
The method acco i ding to claim 1, whe i ein the bonding inte i face is substantially f ie e of oxygen.
The method according to claim 1, where in the bonded hybrid semiconductor structure is a si li con-on-insulator structure
The method accord in g to cla im 1, whe i ein the ammonia-treated surfaces comprise ammonia radicals and molecular ammonia
canceled
The method according to cl aim 1, wherein the annealing is effective to remove ammonia radicals and molecular ammonia from the ammonia-treated si li con sui face and the ammonia-t i eated nitride surface
An intermediate bonding st i ucture compris in g a si lic on surface to be bonded, a nit i ide surface to be bonded, ammonia radicals in contact with each surface to be bonded and molecular ammo ni a in contact with the ammo nia r adicals. withdrawn
A bonded hybrid semiconductor structure having a bonding interface between a silicon su i face and a nitride surface w herein the bonding interface is substa n tially f r ee of oxygen. 13 An LED comprising the bonded hybrid semiconductor stiucture according to claim 12. 3 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
bonded hybrid semiconductor structure
silicon-on-insulator structure
No layer stack recorded.
intermediate bonding structure
Materials described outside the worked examples.
silicon
Si
nitride
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 400–1200 °C | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,796,054Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a hybrid semiconducto i structure, said method comprising: SVG 13484542.01-17-2014.HQJRZUYOPXXIFW3.CLM11438541.9.444.1039.1890.1115.svg 0.253 4.82 Chemistry Black and white exposing the si li con surface and the nitride su i face to an ammonia-containing plasma to form plasma-treated surfaces; and exposing the plasma-treated surfaces to molecular ammonia to form respective ammonia-treated surfaces; join ing the am m onia- tr eated silicon surface and the ammonia-treated nitride surface to form an intermediate bonding structure; and annealing the intermediate bonding structure to form a bonded hybrid semiconductor st r ucture having a bonding interface between the silicon su r face and the nitride surface. 2 (Origina l) The method acco i ding to claim 1, wherein the nitride surface comprises gallium ni tride.
The method according to claim 1, wherein the ammonia-treated surfaces comprise ammo ni a radicals.
The method according to claim 1, where in the ammo ni a-treated surfaces comprise molecular ammo nia.
The method according to claim 1, wherein the ammonia- ti eated s ui faces comprise a mmni onia radicals in contact with each su i face to be bonded and molecular ammonia in contact with the ammo ni a radicals. 2 App li cation No.. 13/484, 542 Office Action dated- previously presented
The method acco i ding to claim 1, whe i ein the bonding inte i face is substantially f ie e of oxygen.
The method according to claim 1, where in the bonded hybrid semiconductor structure is a si li con-on-insulator structure
The method accord in g to cla im 1, whe i ein the ammonia-treated surfaces comprise ammonia radicals and molecular ammonia
canceled
The method according to cl aim 1, wherein the annealing is effective to remove ammonia radicals and molecular ammonia from the ammonia-treated si li con sui face and the ammonia-t i eated nitride surface
An intermediate bonding st i ucture compris in g a si lic on surface to be bonded, a nit i ide surface to be bonded, ammonia radicals in contact with each surface to be bonded and molecular ammo ni a in contact with the ammo nia r adicals. withdrawn
A bonded hybrid semiconductor structure having a bonding interface between a silicon su i face and a nitride surface w herein the bonding interface is substa n tially f r ee of oxygen. 13 An LED comprising the bonded hybrid semiconductor stiucture according to claim 12. 3 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
bonded hybrid semiconductor structure
silicon-on-insulator structure
No layer stack recorded.
intermediate bonding structure
Materials described outside the worked examples.
silicon
Si
nitride
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 400–1200 °C | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,796,054Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a hybrid semiconducto i structure, said method comprising: SVG 13484542.01-17-2014.HQJRZUYOPXXIFW3.CLM11438541.9.444.1039.1890.1115.svg 0.253 4.82 Chemistry Black and white exposing the si li con surface and the nitride su i face to an ammonia-containing plasma to form plasma-treated surfaces; and exposing the plasma-treated surfaces to molecular ammonia to form respective ammonia-treated surfaces; join ing the am m onia- tr eated silicon surface and the ammonia-treated nitride surface to form an intermediate bonding structure; and annealing the intermediate bonding structure to form a bonded hybrid semiconductor st r ucture having a bonding interface between the silicon su r face and the nitride surface. 2 (Origina l) The method acco i ding to claim 1, wherein the nitride surface comprises gallium ni tride.
The method according to claim 1, wherein the ammonia-treated surfaces comprise ammo ni a radicals.
The method according to claim 1, where in the ammo ni a-treated surfaces comprise molecular ammo nia.
The method according to claim 1, wherein the ammonia- ti eated s ui faces comprise a mmni onia radicals in contact with each su i face to be bonded and molecular ammonia in contact with the ammo ni a radicals. 2 App li cation No.. 13/484, 542 Office Action dated- previously presented
The method acco i ding to claim 1, whe i ein the bonding inte i face is substantially f ie e of oxygen.
The method according to claim 1, where in the bonded hybrid semiconductor structure is a si li con-on-insulator structure
The method accord in g to cla im 1, whe i ein the ammonia-treated surfaces comprise ammonia radicals and molecular ammonia
canceled
The method according to cl aim 1, wherein the annealing is effective to remove ammonia radicals and molecular ammonia from the ammonia-treated si li con sui face and the ammonia-t i eated nitride surface
An intermediate bonding st i ucture compris in g a si lic on surface to be bonded, a nit i ide surface to be bonded, ammonia radicals in contact with each surface to be bonded and molecular ammo ni a in contact with the ammo nia r adicals. withdrawn
A bonded hybrid semiconductor structure having a bonding interface between a silicon su i face and a nitride surface w herein the bonding interface is substa n tially f r ee of oxygen. 13 An LED comprising the bonded hybrid semiconductor stiucture according to claim 12. 3 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
bonded hybrid semiconductor structure
silicon-on-insulator structure
No layer stack recorded.
intermediate bonding structure
Materials described outside the worked examples.
silicon
Si
nitride
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 400–1200 °C | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,796,054Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a hybrid semiconducto i structure, said method comprising: SVG 13484542.01-17-2014.HQJRZUYOPXXIFW3.CLM11438541.9.444.1039.1890.1115.svg 0.253 4.82 Chemistry Black and white exposing the si li con surface and the nitride su i face to an ammonia-containing plasma to form plasma-treated surfaces; and exposing the plasma-treated surfaces to molecular ammonia to form respective ammonia-treated surfaces; join ing the am m onia- tr eated silicon surface and the ammonia-treated nitride surface to form an intermediate bonding structure; and annealing the intermediate bonding structure to form a bonded hybrid semiconductor st r ucture having a bonding interface between the silicon su r face and the nitride surface. 2 (Origina l) The method acco i ding to claim 1, wherein the nitride surface comprises gallium ni tride.
The method according to claim 1, wherein the ammonia-treated surfaces comprise ammo ni a radicals.
The method according to claim 1, where in the ammo ni a-treated surfaces comprise molecular ammo nia.
The method according to claim 1, wherein the ammonia- ti eated s ui faces comprise a mmni onia radicals in contact with each su i face to be bonded and molecular ammonia in contact with the ammo ni a radicals. 2 App li cation No.. 13/484, 542 Office Action dated- previously presented
The method acco i ding to claim 1, whe i ein the bonding inte i face is substantially f ie e of oxygen.
The method according to claim 1, where in the bonded hybrid semiconductor structure is a si li con-on-insulator structure
The method accord in g to cla im 1, whe i ein the ammonia-treated surfaces comprise ammonia radicals and molecular ammonia
canceled
The method according to cl aim 1, wherein the annealing is effective to remove ammonia radicals and molecular ammonia from the ammonia-treated si li con sui face and the ammonia-t i eated nitride surface
An intermediate bonding st i ucture compris in g a si lic on surface to be bonded, a nit i ide surface to be bonded, ammonia radicals in contact with each surface to be bonded and molecular ammo ni a in contact with the ammo nia r adicals. withdrawn
A bonded hybrid semiconductor structure having a bonding interface between a silicon su i face and a nitride surface w herein the bonding interface is substa n tially f r ee of oxygen. 13 An LED comprising the bonded hybrid semiconductor stiucture according to claim 12. 3 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
bonded hybrid semiconductor structure
silicon-on-insulator structure
No layer stack recorded.
intermediate bonding structure
Materials described outside the worked examples.
silicon
Si
nitride
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 400–1200 °C | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
LED
gallium nitride
GaN
ammonia
NH₃
ammonia radicals
NH₂-
GaInN
| — |
Thickness | ≤ 1 cm | — |
Duration | ≤ 2 seconds | — |
LED
gallium nitride
GaN
ammonia
NH₃
ammonia radicals
NH₂-
GaInN
| — |
Thickness | ≤ 1 cm | — |
Duration | ≤ 2 seconds | — |
LED
gallium nitride
GaN
ammonia
NH₃
ammonia radicals
NH₂-
GaInN
| — |
Thickness | ≤ 1 cm | — |
Duration | ≤ 2 seconds | — |
LED
gallium nitride
GaN
ammonia
NH₃
ammonia radicals
NH₂-
GaInN
| — |
Thickness | ≤ 1 cm | — |
Duration | ≤ 2 seconds | — |