Patent
US 8,138,510GALLIUM NITRIDE LIGHT EMITTING DEVICES AND METHODS OF MANUFACTURING THE SAME
Young-jo Tak, Jun-youn Kim, Hyun-gi Hong, Jae-won Lee et al.
2012-03-20·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,138,510Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) light emitting device, comprising: a buffer layer on a silicon substrate; a first nitride layer on the buffer layer, the first nitride layer including a plurality of patterns, wherein each of the patterns includes a pair of sidewalls that face each other; a reflective layer on the first nitride layer, wherein one sidewall of the pair is exposed by the reflective layer; an n-type nitride layer on the reflective layer, wherein the n-type nitride layer covers the exposed sidewall; and a GaN-based light emitting structure layer on the n-type nitride layer.
The device of claim 25, wherein the plurality of patterns include a pattern having a shape selected from the group consisting of striped, rectangular, hexagonal and circular.
The device of claim 25, wherein the reflective layer has a thickness of about 0.01-pm to about 2- pm.
The device of claim 25, wherein the reflective layer includes a plurality of dielectric layers having different refractive indexes and being alternately stacked, or includes a metal layer.
The device of claim 25, wherein the buffer layer includes at least one of the group consisting of In xGayAl₂ N (wherein 0<x< 1, Oys1, Oszs 1, x+y+z=1), zirconium diboride (ZrB₂), hafnium diboride (HfB₂), zirconium nitride (ZrN), hafnium nitride (HfN), titanium nitride (Ti N), aluminum nitride (A I N) and combinations thereof.
The device of claim 25, wherein the GaN-based light emitting structure layer includes: an active layer, a p-type nitride layer and a transparent electrode layer sequentially stacked on the n-type nitride layer; a p-type electrode on the transparent electrode layer; and an n-type electrode on a bottom surface of the silicon substrate, wherein the buffer layer and the first nitride layer have a conductivity.
The device of claim 25, wherein the GaN-based light emitting structure layer includes: an active layer, a p-type nitride layer, a transparent electrode layer and a p- type electrode sequentially formed on a first region of the n-type nitride layer; and an n-type electrode on a second region of the n-type nitride layer.
A gallium nitride (G aN) light emitting device, comprising: a silicon substrate having a plurality of patterns, wherein each pattern includes a pair of sidewalls facing each other; a reflective layer on the silicon substrate, wherein one sidewall of the pair is exposed by the reflective layer; a buffer layer on the exposed sidewall; an n-type nitride layer on the reflective layer, wherein the n-type nitride layer covers the exposed side wall; and a GaN-based light emitting structure layer formed on the n-type nitride layer.
The device of claim 32, wherein the plurality of patterns include a pattern having a shape selected from the group consisting of striped, rectangular, hexagonal and circular.
The device of claim 32, wherein the reflective layer has a thickness of about 0.01-p m to about 2- pm.
The device of claim 32, wherein the reflective layer includes a plurality of dielectric layers having different refractive indexes and being alternately stacked, or includes a metal layer.
The device of claim 32, wherein the buffer layer includes at least one of the group consisting of In xGayAl N (wherein Osxs 1, 0sys 1, Osz:5 1, x+y+z=1), zirconium diboride (ZrB₂), hafnium diboride (HfB₂), zirconium nitride (ZrN), hafnium nitride (H f N), titanium nitride (TiN), aluminum nitride (A I N) and combinations thereof.
The device of claim 32, wherein the GaN-based light emitting structure layer includes: an active layer, a p-type nitride layer and a transparent electrode layer sequentially stacked on the n-type nitride layer; a p-type electrode on the transparent electrode layer; and an n-type electrode on a bottom surface of the silicon substrate, wherein the buffer layer and the first nitride layer have a conductivity.
The device of claim 32, wherein the GaN-based light emitting structure layer includes: an active layer, a p-type nitride layer, a transparent electrode layer and a p- type electrode sequentially formed on a first region of the n-type nitride layer; and an n-type electrode on a second region of the n-type nitride layer.
The device of claim 32, wherein the buffer layer is on the silicon substrate, and the reflective layer is on the buffer layer.
(W ITH DRAWN-NEW) A method of a manufacturing a gallium nitride (GaN) light emitting device, the method comprising: sequentially forming a buffer layer and a first nitride layer on a silicon substrate; forming a plurality of patterns by dry etching the first nitride layer, wherein each of the patterns includes a pair of sidewalls that face each other; depositing a reflective layer on the first nitride layer so that one sidewall of the pair is exposed by the reflective layer; forming an n-type nitride layer that covers the first nitride layer by horizontally growing an n-type nitride from the exposed sidewall; and forming a GaN-based light emitting structure layer on the n-type nitride layer. withdrawn
(W IT HDRAWN-NE W) The method of claim 46, wherein forming the plurality of patterns includes forming a pattern having a shape selected from the group consisting of striped, rectangular, hexagonal and circular. withdrawn
(W ITH DRAWN-NE W) The method of claim 46, wherein depositing the reflective layer includes irradiating beams formed of a reflective material in a set inclined angle with respect to the first nitride layer by using physical vapor deposition (PVD) having linearity. withdrawn
(W IT HDRAWN-NEW) The method of claim 46, wherein the buffer layer includes at least one of the group consisting of In.GayAl. N (wherein Osxs 1, O sys 1, O szs 1, x+y+z=1), zirconium diboride (ZrB₂), haf nium diboride (HfB₂), zirconium nitride U.S. Application No. 12/662,925 Atty. Dkt. No. 2557 SI -001433/US Page 7 of 12 (ZrN), hafnium nitride (HfN), titanium nitride (Ti N), aluminum nitride (A N) and combinations thereof. withdrawn
(W ITH DRAWN-NE W) The method of claim 46, wherein forming the GaN-based light emitting structure layer on the n-type nitride layer includes: forming an active layer, a p-type nitride layer and a transparent electrode layer on the n-type nitride layer; and forming a p-type electrode on the transparent electrode layer and a n-type electrode on a bottom surface of the silicon substrate, wherein the buffer layer and the first nitride layer have a conductivity. withdrawn
(W IT HDRAWN-NE W) The method of claim 46, wherein forming the GaN-based light emitting structure layer on the n-type nitride layer includes: forming an active layer, a p-type nitride layer and a transparent electrode layer on the n-type nitride layer; sequentially etching the transparent electrode layer, the active layer, the p- type nitride layer and an upper portion of the n-type nitride layer, wherein the transparent electrode layer, the active layer and the p-type nitride layer are formed in a first region of the n-type nitride; and forming a p-type electrode on the transparent electrode layer and an n-type electrode on an upper surface of the n-type nitride layer in the first region of the n- type nitride. withdrawn
(W IT HDRAWN-NE w) A method of manufacturing a gallium nitride (GaN) light emitting device, the method comprising: forming a plurality of patterns by patterning a silicon substrate, wherein each of the patterns includes a pair of sidewalls that face each other; depositing a reflective layer on the silicon substrate so that one sidewall of the pair is exposed by the reflective layer; forming a buffer layer on the exposed sidewall; forming an n-type nitride layer that covers the silicon substrate by horizontally growing an n-type nitride from the buffer layer; and U.S. Application No. 12/662,925 Atty. Dkt. No. 2557 SI -001433/US Page 8 of 12 forming a GaN-based light emitting structure layer on the n-type nitride layer. withdrawn
(W IT HDRAWN-NE W) The method of claim 54, wherein forming the plurality of patterns includes forming a pattern having a shape selected from the group consisting of striped, rectangular, hexagonal and circular. withdrawn
(W IT HDRAWN-NE W) The method of claim 54, wherein depositing the reflective layer includes irradiating beams formed of a reflective material in a set inclined angle with respect to the n-type nitride layer by using physical vapor deposition (PVD) having linearity. withdrawn
(W IT HDRAWN-NE w) The method of claim 54, wherein the buffer layer includes at least one of the group consisting of In XGayAl₂N (wherein Osxs 1, Osys 1, Oszs 1, x+y+z=1), zirconium diboride (ZrB₂), hafnium diboride (HfB₂), zirconium nitride (ZrN), hafnium nitride (HfN), titanium nitride (TiN), aluminum nitride (A i N) and combinations thereof. withdrawn
(W IT HDRAWN-NE W) The method of claim 54, wherein forming the GaN-based light emitting structure layer on the n-type nitride layer includes: forming an active layer, a p-type nitride layer and a transparent electrode layer on the n-type nitride layer; and forming a p-type electrode on the transparent electrode layer and a n-type electrode on a bottom surface of the silicon substrate, wherein the buffer layer and the first nitride layer have a conductivity. withdrawn
(WI TH DRA W N-NE W) The method of claim 54, wherein forming the GaN-based light emitting structure layer on the n-type nitride layer includes: forming an active layer, a p-type nitride layer and a transparent electrode layer on the n-type nitride layer; sequentially etching the transparent electrode layer, the active layer, the p- type nitride layer and an upper portion of the n-type nitride layer, wherein the transparent electrode layer, the active layer and the p-type nitride layer are formed in a first region of the n-type nitride; and forming a p-type electrode on the transparent electrode layer and a n-type electrode on an upper surface of the n-type nitride layer in the first region of the n- type nitride. withdrawn
(W ITH DRAWN-NE W) The method of claim 54, wherein the buffer layer is formed on the plurality of patterns, and the reflective layer is deposited on the buffer layer. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaN light emitting device (nitride layer on buffer layer on silicon substrate)
GaN light emitting device (patterned silicon substrate)
Materials described outside the worked examples.
silicon substrate
Si
buffer layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,138,510Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) light emitting device, comprising: a buffer layer on a silicon substrate; a first nitride layer on the buffer layer, the first nitride layer including a plurality of patterns, wherein each of the patterns includes a pair of sidewalls that face each other; a reflective layer on the first nitride layer, wherein one sidewall of the pair is exposed by the reflective layer; an n-type nitride layer on the reflective layer, wherein the n-type nitride layer covers the exposed sidewall; and a GaN-based light emitting structure layer on the n-type nitride layer.
The device of claim 25, wherein the plurality of patterns include a pattern having a shape selected from the group consisting of striped, rectangular, hexagonal and circular.
The device of claim 25, wherein the reflective layer has a thickness of about 0.01-pm to about 2- pm.
The device of claim 25, wherein the reflective layer includes a plurality of dielectric layers having different refractive indexes and being alternately stacked, or includes a metal layer.
The device of claim 25, wherein the buffer layer includes at least one of the group consisting of In xGayAl₂ N (wherein 0<x< 1, Oys1, Oszs 1, x+y+z=1), zirconium diboride (ZrB₂), hafnium diboride (HfB₂), zirconium nitride (ZrN), hafnium nitride (HfN), titanium nitride (Ti N), aluminum nitride (A I N) and combinations thereof.
The device of claim 25, wherein the GaN-based light emitting structure layer includes: an active layer, a p-type nitride layer and a transparent electrode layer sequentially stacked on the n-type nitride layer; a p-type electrode on the transparent electrode layer; and an n-type electrode on a bottom surface of the silicon substrate, wherein the buffer layer and the first nitride layer have a conductivity.
The device of claim 25, wherein the GaN-based light emitting structure layer includes: an active layer, a p-type nitride layer, a transparent electrode layer and a p- type electrode sequentially formed on a first region of the n-type nitride layer; and an n-type electrode on a second region of the n-type nitride layer.
A gallium nitride (G aN) light emitting device, comprising: a silicon substrate having a plurality of patterns, wherein each pattern includes a pair of sidewalls facing each other; a reflective layer on the silicon substrate, wherein one sidewall of the pair is exposed by the reflective layer; a buffer layer on the exposed sidewall; an n-type nitride layer on the reflective layer, wherein the n-type nitride layer covers the exposed side wall; and a GaN-based light emitting structure layer formed on the n-type nitride layer.
The device of claim 32, wherein the plurality of patterns include a pattern having a shape selected from the group consisting of striped, rectangular, hexagonal and circular.
The device of claim 32, wherein the reflective layer has a thickness of about 0.01-p m to about 2- pm.
The device of claim 32, wherein the reflective layer includes a plurality of dielectric layers having different refractive indexes and being alternately stacked, or includes a metal layer.
The device of claim 32, wherein the buffer layer includes at least one of the group consisting of In xGayAl N (wherein Osxs 1, 0sys 1, Osz:5 1, x+y+z=1), zirconium diboride (ZrB₂), hafnium diboride (HfB₂), zirconium nitride (ZrN), hafnium nitride (H f N), titanium nitride (TiN), aluminum nitride (A I N) and combinations thereof.
The device of claim 32, wherein the GaN-based light emitting structure layer includes: an active layer, a p-type nitride layer and a transparent electrode layer sequentially stacked on the n-type nitride layer; a p-type electrode on the transparent electrode layer; and an n-type electrode on a bottom surface of the silicon substrate, wherein the buffer layer and the first nitride layer have a conductivity.
The device of claim 32, wherein the GaN-based light emitting structure layer includes: an active layer, a p-type nitride layer, a transparent electrode layer and a p- type electrode sequentially formed on a first region of the n-type nitride layer; and an n-type electrode on a second region of the n-type nitride layer.
The device of claim 32, wherein the buffer layer is on the silicon substrate, and the reflective layer is on the buffer layer.
(W ITH DRAWN-NEW) A method of a manufacturing a gallium nitride (GaN) light emitting device, the method comprising: sequentially forming a buffer layer and a first nitride layer on a silicon substrate; forming a plurality of patterns by dry etching the first nitride layer, wherein each of the patterns includes a pair of sidewalls that face each other; depositing a reflective layer on the first nitride layer so that one sidewall of the pair is exposed by the reflective layer; forming an n-type nitride layer that covers the first nitride layer by horizontally growing an n-type nitride from the exposed sidewall; and forming a GaN-based light emitting structure layer on the n-type nitride layer. withdrawn
(W IT HDRAWN-NE W) The method of claim 46, wherein forming the plurality of patterns includes forming a pattern having a shape selected from the group consisting of striped, rectangular, hexagonal and circular. withdrawn
(W ITH DRAWN-NE W) The method of claim 46, wherein depositing the reflective layer includes irradiating beams formed of a reflective material in a set inclined angle with respect to the first nitride layer by using physical vapor deposition (PVD) having linearity. withdrawn
(W IT HDRAWN-NEW) The method of claim 46, wherein the buffer layer includes at least one of the group consisting of In.GayAl. N (wherein Osxs 1, O sys 1, O szs 1, x+y+z=1), zirconium diboride (ZrB₂), haf nium diboride (HfB₂), zirconium nitride U.S. Application No. 12/662,925 Atty. Dkt. No. 2557 SI -001433/US Page 7 of 12 (ZrN), hafnium nitride (HfN), titanium nitride (Ti N), aluminum nitride (A N) and combinations thereof. withdrawn
(W ITH DRAWN-NE W) The method of claim 46, wherein forming the GaN-based light emitting structure layer on the n-type nitride layer includes: forming an active layer, a p-type nitride layer and a transparent electrode layer on the n-type nitride layer; and forming a p-type electrode on the transparent electrode layer and a n-type electrode on a bottom surface of the silicon substrate, wherein the buffer layer and the first nitride layer have a conductivity. withdrawn
(W IT HDRAWN-NE W) The method of claim 46, wherein forming the GaN-based light emitting structure layer on the n-type nitride layer includes: forming an active layer, a p-type nitride layer and a transparent electrode layer on the n-type nitride layer; sequentially etching the transparent electrode layer, the active layer, the p- type nitride layer and an upper portion of the n-type nitride layer, wherein the transparent electrode layer, the active layer and the p-type nitride layer are formed in a first region of the n-type nitride; and forming a p-type electrode on the transparent electrode layer and an n-type electrode on an upper surface of the n-type nitride layer in the first region of the n- type nitride. withdrawn
(W IT HDRAWN-NE w) A method of manufacturing a gallium nitride (GaN) light emitting device, the method comprising: forming a plurality of patterns by patterning a silicon substrate, wherein each of the patterns includes a pair of sidewalls that face each other; depositing a reflective layer on the silicon substrate so that one sidewall of the pair is exposed by the reflective layer; forming a buffer layer on the exposed sidewall; forming an n-type nitride layer that covers the silicon substrate by horizontally growing an n-type nitride from the buffer layer; and U.S. Application No. 12/662,925 Atty. Dkt. No. 2557 SI -001433/US Page 8 of 12 forming a GaN-based light emitting structure layer on the n-type nitride layer. withdrawn
(W IT HDRAWN-NE W) The method of claim 54, wherein forming the plurality of patterns includes forming a pattern having a shape selected from the group consisting of striped, rectangular, hexagonal and circular. withdrawn
(W IT HDRAWN-NE W) The method of claim 54, wherein depositing the reflective layer includes irradiating beams formed of a reflective material in a set inclined angle with respect to the n-type nitride layer by using physical vapor deposition (PVD) having linearity. withdrawn
(W IT HDRAWN-NE w) The method of claim 54, wherein the buffer layer includes at least one of the group consisting of In XGayAl₂N (wherein Osxs 1, Osys 1, Oszs 1, x+y+z=1), zirconium diboride (ZrB₂), hafnium diboride (HfB₂), zirconium nitride (ZrN), hafnium nitride (HfN), titanium nitride (TiN), aluminum nitride (A i N) and combinations thereof. withdrawn
(W IT HDRAWN-NE W) The method of claim 54, wherein forming the GaN-based light emitting structure layer on the n-type nitride layer includes: forming an active layer, a p-type nitride layer and a transparent electrode layer on the n-type nitride layer; and forming a p-type electrode on the transparent electrode layer and a n-type electrode on a bottom surface of the silicon substrate, wherein the buffer layer and the first nitride layer have a conductivity. withdrawn
(WI TH DRA W N-NE W) The method of claim 54, wherein forming the GaN-based light emitting structure layer on the n-type nitride layer includes: forming an active layer, a p-type nitride layer and a transparent electrode layer on the n-type nitride layer; sequentially etching the transparent electrode layer, the active layer, the p- type nitride layer and an upper portion of the n-type nitride layer, wherein the transparent electrode layer, the active layer and the p-type nitride layer are formed in a first region of the n-type nitride; and forming a p-type electrode on the transparent electrode layer and a n-type electrode on an upper surface of the n-type nitride layer in the first region of the n- type nitride. withdrawn
(W ITH DRAWN-NE W) The method of claim 54, wherein the buffer layer is formed on the plurality of patterns, and the reflective layer is deposited on the buffer layer. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaN light emitting device (nitride layer on buffer layer on silicon substrate)
GaN light emitting device (patterned silicon substrate)
Materials described outside the worked examples.
silicon substrate
Si
buffer layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,138,510Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) light emitting device, comprising: a buffer layer on a silicon substrate; a first nitride layer on the buffer layer, the first nitride layer including a plurality of patterns, wherein each of the patterns includes a pair of sidewalls that face each other; a reflective layer on the first nitride layer, wherein one sidewall of the pair is exposed by the reflective layer; an n-type nitride layer on the reflective layer, wherein the n-type nitride layer covers the exposed sidewall; and a GaN-based light emitting structure layer on the n-type nitride layer.
The device of claim 25, wherein the plurality of patterns include a pattern having a shape selected from the group consisting of striped, rectangular, hexagonal and circular.
The device of claim 25, wherein the reflective layer has a thickness of about 0.01-pm to about 2- pm.
The device of claim 25, wherein the reflective layer includes a plurality of dielectric layers having different refractive indexes and being alternately stacked, or includes a metal layer.
The device of claim 25, wherein the buffer layer includes at least one of the group consisting of In xGayAl₂ N (wherein 0<x< 1, Oys1, Oszs 1, x+y+z=1), zirconium diboride (ZrB₂), hafnium diboride (HfB₂), zirconium nitride (ZrN), hafnium nitride (HfN), titanium nitride (Ti N), aluminum nitride (A I N) and combinations thereof.
The device of claim 25, wherein the GaN-based light emitting structure layer includes: an active layer, a p-type nitride layer and a transparent electrode layer sequentially stacked on the n-type nitride layer; a p-type electrode on the transparent electrode layer; and an n-type electrode on a bottom surface of the silicon substrate, wherein the buffer layer and the first nitride layer have a conductivity.
The device of claim 25, wherein the GaN-based light emitting structure layer includes: an active layer, a p-type nitride layer, a transparent electrode layer and a p- type electrode sequentially formed on a first region of the n-type nitride layer; and an n-type electrode on a second region of the n-type nitride layer.
A gallium nitride (G aN) light emitting device, comprising: a silicon substrate having a plurality of patterns, wherein each pattern includes a pair of sidewalls facing each other; a reflective layer on the silicon substrate, wherein one sidewall of the pair is exposed by the reflective layer; a buffer layer on the exposed sidewall; an n-type nitride layer on the reflective layer, wherein the n-type nitride layer covers the exposed side wall; and a GaN-based light emitting structure layer formed on the n-type nitride layer.
The device of claim 32, wherein the plurality of patterns include a pattern having a shape selected from the group consisting of striped, rectangular, hexagonal and circular.
The device of claim 32, wherein the reflective layer has a thickness of about 0.01-p m to about 2- pm.
The device of claim 32, wherein the reflective layer includes a plurality of dielectric layers having different refractive indexes and being alternately stacked, or includes a metal layer.
The device of claim 32, wherein the buffer layer includes at least one of the group consisting of In xGayAl N (wherein Osxs 1, 0sys 1, Osz:5 1, x+y+z=1), zirconium diboride (ZrB₂), hafnium diboride (HfB₂), zirconium nitride (ZrN), hafnium nitride (H f N), titanium nitride (TiN), aluminum nitride (A I N) and combinations thereof.
The device of claim 32, wherein the GaN-based light emitting structure layer includes: an active layer, a p-type nitride layer and a transparent electrode layer sequentially stacked on the n-type nitride layer; a p-type electrode on the transparent electrode layer; and an n-type electrode on a bottom surface of the silicon substrate, wherein the buffer layer and the first nitride layer have a conductivity.
The device of claim 32, wherein the GaN-based light emitting structure layer includes: an active layer, a p-type nitride layer, a transparent electrode layer and a p- type electrode sequentially formed on a first region of the n-type nitride layer; and an n-type electrode on a second region of the n-type nitride layer.
The device of claim 32, wherein the buffer layer is on the silicon substrate, and the reflective layer is on the buffer layer.
(W ITH DRAWN-NEW) A method of a manufacturing a gallium nitride (GaN) light emitting device, the method comprising: sequentially forming a buffer layer and a first nitride layer on a silicon substrate; forming a plurality of patterns by dry etching the first nitride layer, wherein each of the patterns includes a pair of sidewalls that face each other; depositing a reflective layer on the first nitride layer so that one sidewall of the pair is exposed by the reflective layer; forming an n-type nitride layer that covers the first nitride layer by horizontally growing an n-type nitride from the exposed sidewall; and forming a GaN-based light emitting structure layer on the n-type nitride layer. withdrawn
(W IT HDRAWN-NE W) The method of claim 46, wherein forming the plurality of patterns includes forming a pattern having a shape selected from the group consisting of striped, rectangular, hexagonal and circular. withdrawn
(W ITH DRAWN-NE W) The method of claim 46, wherein depositing the reflective layer includes irradiating beams formed of a reflective material in a set inclined angle with respect to the first nitride layer by using physical vapor deposition (PVD) having linearity. withdrawn
(W IT HDRAWN-NEW) The method of claim 46, wherein the buffer layer includes at least one of the group consisting of In.GayAl. N (wherein Osxs 1, O sys 1, O szs 1, x+y+z=1), zirconium diboride (ZrB₂), haf nium diboride (HfB₂), zirconium nitride U.S. Application No. 12/662,925 Atty. Dkt. No. 2557 SI -001433/US Page 7 of 12 (ZrN), hafnium nitride (HfN), titanium nitride (Ti N), aluminum nitride (A N) and combinations thereof. withdrawn
(W ITH DRAWN-NE W) The method of claim 46, wherein forming the GaN-based light emitting structure layer on the n-type nitride layer includes: forming an active layer, a p-type nitride layer and a transparent electrode layer on the n-type nitride layer; and forming a p-type electrode on the transparent electrode layer and a n-type electrode on a bottom surface of the silicon substrate, wherein the buffer layer and the first nitride layer have a conductivity. withdrawn
(W IT HDRAWN-NE W) The method of claim 46, wherein forming the GaN-based light emitting structure layer on the n-type nitride layer includes: forming an active layer, a p-type nitride layer and a transparent electrode layer on the n-type nitride layer; sequentially etching the transparent electrode layer, the active layer, the p- type nitride layer and an upper portion of the n-type nitride layer, wherein the transparent electrode layer, the active layer and the p-type nitride layer are formed in a first region of the n-type nitride; and forming a p-type electrode on the transparent electrode layer and an n-type electrode on an upper surface of the n-type nitride layer in the first region of the n- type nitride. withdrawn
(W IT HDRAWN-NE w) A method of manufacturing a gallium nitride (GaN) light emitting device, the method comprising: forming a plurality of patterns by patterning a silicon substrate, wherein each of the patterns includes a pair of sidewalls that face each other; depositing a reflective layer on the silicon substrate so that one sidewall of the pair is exposed by the reflective layer; forming a buffer layer on the exposed sidewall; forming an n-type nitride layer that covers the silicon substrate by horizontally growing an n-type nitride from the buffer layer; and U.S. Application No. 12/662,925 Atty. Dkt. No. 2557 SI -001433/US Page 8 of 12 forming a GaN-based light emitting structure layer on the n-type nitride layer. withdrawn
(W IT HDRAWN-NE W) The method of claim 54, wherein forming the plurality of patterns includes forming a pattern having a shape selected from the group consisting of striped, rectangular, hexagonal and circular. withdrawn
(W IT HDRAWN-NE W) The method of claim 54, wherein depositing the reflective layer includes irradiating beams formed of a reflective material in a set inclined angle with respect to the n-type nitride layer by using physical vapor deposition (PVD) having linearity. withdrawn
(W IT HDRAWN-NE w) The method of claim 54, wherein the buffer layer includes at least one of the group consisting of In XGayAl₂N (wherein Osxs 1, Osys 1, Oszs 1, x+y+z=1), zirconium diboride (ZrB₂), hafnium diboride (HfB₂), zirconium nitride (ZrN), hafnium nitride (HfN), titanium nitride (TiN), aluminum nitride (A i N) and combinations thereof. withdrawn
(W IT HDRAWN-NE W) The method of claim 54, wherein forming the GaN-based light emitting structure layer on the n-type nitride layer includes: forming an active layer, a p-type nitride layer and a transparent electrode layer on the n-type nitride layer; and forming a p-type electrode on the transparent electrode layer and a n-type electrode on a bottom surface of the silicon substrate, wherein the buffer layer and the first nitride layer have a conductivity. withdrawn
(WI TH DRA W N-NE W) The method of claim 54, wherein forming the GaN-based light emitting structure layer on the n-type nitride layer includes: forming an active layer, a p-type nitride layer and a transparent electrode layer on the n-type nitride layer; sequentially etching the transparent electrode layer, the active layer, the p- type nitride layer and an upper portion of the n-type nitride layer, wherein the transparent electrode layer, the active layer and the p-type nitride layer are formed in a first region of the n-type nitride; and forming a p-type electrode on the transparent electrode layer and a n-type electrode on an upper surface of the n-type nitride layer in the first region of the n- type nitride. withdrawn
(W ITH DRAWN-NE W) The method of claim 54, wherein the buffer layer is formed on the plurality of patterns, and the reflective layer is deposited on the buffer layer. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaN light emitting device (nitride layer on buffer layer on silicon substrate)
GaN light emitting device (patterned silicon substrate)
Materials described outside the worked examples.
silicon substrate
Si
buffer layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,138,510Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) light emitting device, comprising: a buffer layer on a silicon substrate; a first nitride layer on the buffer layer, the first nitride layer including a plurality of patterns, wherein each of the patterns includes a pair of sidewalls that face each other; a reflective layer on the first nitride layer, wherein one sidewall of the pair is exposed by the reflective layer; an n-type nitride layer on the reflective layer, wherein the n-type nitride layer covers the exposed sidewall; and a GaN-based light emitting structure layer on the n-type nitride layer.
The device of claim 25, wherein the plurality of patterns include a pattern having a shape selected from the group consisting of striped, rectangular, hexagonal and circular.
The device of claim 25, wherein the reflective layer has a thickness of about 0.01-pm to about 2- pm.
The device of claim 25, wherein the reflective layer includes a plurality of dielectric layers having different refractive indexes and being alternately stacked, or includes a metal layer.
The device of claim 25, wherein the buffer layer includes at least one of the group consisting of In xGayAl₂ N (wherein 0<x< 1, Oys1, Oszs 1, x+y+z=1), zirconium diboride (ZrB₂), hafnium diboride (HfB₂), zirconium nitride (ZrN), hafnium nitride (HfN), titanium nitride (Ti N), aluminum nitride (A I N) and combinations thereof.
The device of claim 25, wherein the GaN-based light emitting structure layer includes: an active layer, a p-type nitride layer and a transparent electrode layer sequentially stacked on the n-type nitride layer; a p-type electrode on the transparent electrode layer; and an n-type electrode on a bottom surface of the silicon substrate, wherein the buffer layer and the first nitride layer have a conductivity.
The device of claim 25, wherein the GaN-based light emitting structure layer includes: an active layer, a p-type nitride layer, a transparent electrode layer and a p- type electrode sequentially formed on a first region of the n-type nitride layer; and an n-type electrode on a second region of the n-type nitride layer.
A gallium nitride (G aN) light emitting device, comprising: a silicon substrate having a plurality of patterns, wherein each pattern includes a pair of sidewalls facing each other; a reflective layer on the silicon substrate, wherein one sidewall of the pair is exposed by the reflective layer; a buffer layer on the exposed sidewall; an n-type nitride layer on the reflective layer, wherein the n-type nitride layer covers the exposed side wall; and a GaN-based light emitting structure layer formed on the n-type nitride layer.
The device of claim 32, wherein the plurality of patterns include a pattern having a shape selected from the group consisting of striped, rectangular, hexagonal and circular.
The device of claim 32, wherein the reflective layer has a thickness of about 0.01-p m to about 2- pm.
The device of claim 32, wherein the reflective layer includes a plurality of dielectric layers having different refractive indexes and being alternately stacked, or includes a metal layer.
The device of claim 32, wherein the buffer layer includes at least one of the group consisting of In xGayAl N (wherein Osxs 1, 0sys 1, Osz:5 1, x+y+z=1), zirconium diboride (ZrB₂), hafnium diboride (HfB₂), zirconium nitride (ZrN), hafnium nitride (H f N), titanium nitride (TiN), aluminum nitride (A I N) and combinations thereof.
The device of claim 32, wherein the GaN-based light emitting structure layer includes: an active layer, a p-type nitride layer and a transparent electrode layer sequentially stacked on the n-type nitride layer; a p-type electrode on the transparent electrode layer; and an n-type electrode on a bottom surface of the silicon substrate, wherein the buffer layer and the first nitride layer have a conductivity.
The device of claim 32, wherein the GaN-based light emitting structure layer includes: an active layer, a p-type nitride layer, a transparent electrode layer and a p- type electrode sequentially formed on a first region of the n-type nitride layer; and an n-type electrode on a second region of the n-type nitride layer.
The device of claim 32, wherein the buffer layer is on the silicon substrate, and the reflective layer is on the buffer layer.
(W ITH DRAWN-NEW) A method of a manufacturing a gallium nitride (GaN) light emitting device, the method comprising: sequentially forming a buffer layer and a first nitride layer on a silicon substrate; forming a plurality of patterns by dry etching the first nitride layer, wherein each of the patterns includes a pair of sidewalls that face each other; depositing a reflective layer on the first nitride layer so that one sidewall of the pair is exposed by the reflective layer; forming an n-type nitride layer that covers the first nitride layer by horizontally growing an n-type nitride from the exposed sidewall; and forming a GaN-based light emitting structure layer on the n-type nitride layer. withdrawn
(W IT HDRAWN-NE W) The method of claim 46, wherein forming the plurality of patterns includes forming a pattern having a shape selected from the group consisting of striped, rectangular, hexagonal and circular. withdrawn
(W ITH DRAWN-NE W) The method of claim 46, wherein depositing the reflective layer includes irradiating beams formed of a reflective material in a set inclined angle with respect to the first nitride layer by using physical vapor deposition (PVD) having linearity. withdrawn
(W IT HDRAWN-NEW) The method of claim 46, wherein the buffer layer includes at least one of the group consisting of In.GayAl. N (wherein Osxs 1, O sys 1, O szs 1, x+y+z=1), zirconium diboride (ZrB₂), haf nium diboride (HfB₂), zirconium nitride U.S. Application No. 12/662,925 Atty. Dkt. No. 2557 SI -001433/US Page 7 of 12 (ZrN), hafnium nitride (HfN), titanium nitride (Ti N), aluminum nitride (A N) and combinations thereof. withdrawn
(W ITH DRAWN-NE W) The method of claim 46, wherein forming the GaN-based light emitting structure layer on the n-type nitride layer includes: forming an active layer, a p-type nitride layer and a transparent electrode layer on the n-type nitride layer; and forming a p-type electrode on the transparent electrode layer and a n-type electrode on a bottom surface of the silicon substrate, wherein the buffer layer and the first nitride layer have a conductivity. withdrawn
(W IT HDRAWN-NE W) The method of claim 46, wherein forming the GaN-based light emitting structure layer on the n-type nitride layer includes: forming an active layer, a p-type nitride layer and a transparent electrode layer on the n-type nitride layer; sequentially etching the transparent electrode layer, the active layer, the p- type nitride layer and an upper portion of the n-type nitride layer, wherein the transparent electrode layer, the active layer and the p-type nitride layer are formed in a first region of the n-type nitride; and forming a p-type electrode on the transparent electrode layer and an n-type electrode on an upper surface of the n-type nitride layer in the first region of the n- type nitride. withdrawn
(W IT HDRAWN-NE w) A method of manufacturing a gallium nitride (GaN) light emitting device, the method comprising: forming a plurality of patterns by patterning a silicon substrate, wherein each of the patterns includes a pair of sidewalls that face each other; depositing a reflective layer on the silicon substrate so that one sidewall of the pair is exposed by the reflective layer; forming a buffer layer on the exposed sidewall; forming an n-type nitride layer that covers the silicon substrate by horizontally growing an n-type nitride from the buffer layer; and U.S. Application No. 12/662,925 Atty. Dkt. No. 2557 SI -001433/US Page 8 of 12 forming a GaN-based light emitting structure layer on the n-type nitride layer. withdrawn
(W IT HDRAWN-NE W) The method of claim 54, wherein forming the plurality of patterns includes forming a pattern having a shape selected from the group consisting of striped, rectangular, hexagonal and circular. withdrawn
(W IT HDRAWN-NE W) The method of claim 54, wherein depositing the reflective layer includes irradiating beams formed of a reflective material in a set inclined angle with respect to the n-type nitride layer by using physical vapor deposition (PVD) having linearity. withdrawn
(W IT HDRAWN-NE w) The method of claim 54, wherein the buffer layer includes at least one of the group consisting of In XGayAl₂N (wherein Osxs 1, Osys 1, Oszs 1, x+y+z=1), zirconium diboride (ZrB₂), hafnium diboride (HfB₂), zirconium nitride (ZrN), hafnium nitride (HfN), titanium nitride (TiN), aluminum nitride (A i N) and combinations thereof. withdrawn
(W IT HDRAWN-NE W) The method of claim 54, wherein forming the GaN-based light emitting structure layer on the n-type nitride layer includes: forming an active layer, a p-type nitride layer and a transparent electrode layer on the n-type nitride layer; and forming a p-type electrode on the transparent electrode layer and a n-type electrode on a bottom surface of the silicon substrate, wherein the buffer layer and the first nitride layer have a conductivity. withdrawn
(WI TH DRA W N-NE W) The method of claim 54, wherein forming the GaN-based light emitting structure layer on the n-type nitride layer includes: forming an active layer, a p-type nitride layer and a transparent electrode layer on the n-type nitride layer; sequentially etching the transparent electrode layer, the active layer, the p- type nitride layer and an upper portion of the n-type nitride layer, wherein the transparent electrode layer, the active layer and the p-type nitride layer are formed in a first region of the n-type nitride; and forming a p-type electrode on the transparent electrode layer and a n-type electrode on an upper surface of the n-type nitride layer in the first region of the n- type nitride. withdrawn
(W ITH DRAWN-NE W) The method of claim 54, wherein the buffer layer is formed on the plurality of patterns, and the reflective layer is deposited on the buffer layer. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaN light emitting device (nitride layer on buffer layer on silicon substrate)
GaN light emitting device (patterned silicon substrate)
Materials described outside the worked examples.
silicon substrate
Si
buffer layer
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