Patent
US 12,557,436 B2SUBSTRATE PROCESSING FOR GaN GROWTH
Michel Khoury, Ria Someshwar
Applied Materials, Inc., Santa Clara, CA (US)·Feb. 17, 2026·US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 12,557,436 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a top plan view of one embodiment of an exemplary processing system according to some embodi- ments of the present technology.
FIG. 2 shows selected operations in a method of forming a semiconductor structure according to some embodiments of the present technology.
FIGS. 3A-3C illustrate schematic views of a device developed according to some embodiments of the present technology.
FIG. 4 shows selected operations in a method of forming a semiconductor structure according to some embodiments of the present technology. Several of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of semiconductor processing comprising: forming a seed layer of a metal nitride on a substrate, wherein the seed layer is formed by physical vapor deposition, and the metal nitride is selected from the group consisting of aluminum nitride, hafnium nitride, and niobium nitride; annealing the seed layer at a temperature of greater than or about 1000° C. for a period of time greater than or about 60 minutes; exposing the seed layer to an acid; and forming a gallium-containing material on the seed layer.
The method of semiconductor processing of claim 1, wherein the seed layer comprises a nitride of aluminum, hafnium, or niobium.
The method of semiconductor processing of claim 1, wherein exposing the seed layer to the acid comprises: contacting the seed layer with a halogen-containing wet etchant.
The method of semiconductor processing of claim 1, wherein the gallium-containing material comprises gallium nitride.
The method of semiconductor processing of claim 1, wherein the gallium-containing material is characterized by 10 a dislocation density of less than or about 7E₉/cm2.
A method of semiconductor processing comprising: forming a seed layer of a metal nitride on a substrate, wherein the metal nitride is selected from the group consisting of aluminum nitride, hafnium nitride, and niobium nitride; subsequent to forming the seed layer, annealing the seed layer for a period of time; exposing the substrate to an oxygen-containing environ-ment; forming an oxide layer overlying the seed layer in the oxygen-containing environment; exposing the seed layer to an acid after forming the oxide layer; and forming a gallium-containing material on the seed layer.
The method of semiconductor processing of claim 8, wherein annealing the seed layer comprises an anneal at a temperature of greater than or about 1000° C. and wherein the period of time is greater than or about 60 minutes.
The method of semiconductor processing of claim 8, wherein the seed layer comprises a nitride of aluminum, hafnium, or niobium.
The method of semiconductor processing of claim 8, wherein the seed layer is formed by physical vapor deposi-tion.
The method of semiconductor processing of claim 8, wherein exposing the seed layer to the acid comprises: contacting the seed layer with a halogen-containing wet etchant; and maintaining an amount of an oxygen-containing material overlying the seed layer, wherein the gallium-contain-ing material is formed overlying the oxygen-containing material.
The method of semiconductor processing of claim 8, wherein the gallium-containing material is characterized by a dislocation density of less than or about 7E₉/cm2. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor LED structure
Materials described outside the worked examples.
aluminum nitride
AlN
hafnium nitride
HfN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dislocation density of gallium-containing material | ≤ 7000000000 /cm2 | gallium-containing material |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 28
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,557,436 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a top plan view of one embodiment of an exemplary processing system according to some embodi- ments of the present technology.
FIG. 2 shows selected operations in a method of forming a semiconductor structure according to some embodiments of the present technology.
FIGS. 3A-3C illustrate schematic views of a device developed according to some embodiments of the present technology.
FIG. 4 shows selected operations in a method of forming a semiconductor structure according to some embodiments of the present technology. Several of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of semiconductor processing comprising: forming a seed layer of a metal nitride on a substrate, wherein the seed layer is formed by physical vapor deposition, and the metal nitride is selected from the group consisting of aluminum nitride, hafnium nitride, and niobium nitride; annealing the seed layer at a temperature of greater than or about 1000° C. for a period of time greater than or about 60 minutes; exposing the seed layer to an acid; and forming a gallium-containing material on the seed layer.
The method of semiconductor processing of claim 1, wherein the seed layer comprises a nitride of aluminum, hafnium, or niobium.
The method of semiconductor processing of claim 1, wherein exposing the seed layer to the acid comprises: contacting the seed layer with a halogen-containing wet etchant.
The method of semiconductor processing of claim 1, wherein the gallium-containing material comprises gallium nitride.
The method of semiconductor processing of claim 1, wherein the gallium-containing material is characterized by 10 a dislocation density of less than or about 7E₉/cm2.
A method of semiconductor processing comprising: forming a seed layer of a metal nitride on a substrate, wherein the metal nitride is selected from the group consisting of aluminum nitride, hafnium nitride, and niobium nitride; subsequent to forming the seed layer, annealing the seed layer for a period of time; exposing the substrate to an oxygen-containing environ-ment; forming an oxide layer overlying the seed layer in the oxygen-containing environment; exposing the seed layer to an acid after forming the oxide layer; and forming a gallium-containing material on the seed layer.
The method of semiconductor processing of claim 8, wherein annealing the seed layer comprises an anneal at a temperature of greater than or about 1000° C. and wherein the period of time is greater than or about 60 minutes.
The method of semiconductor processing of claim 8, wherein the seed layer comprises a nitride of aluminum, hafnium, or niobium.
The method of semiconductor processing of claim 8, wherein the seed layer is formed by physical vapor deposi-tion.
The method of semiconductor processing of claim 8, wherein exposing the seed layer to the acid comprises: contacting the seed layer with a halogen-containing wet etchant; and maintaining an amount of an oxygen-containing material overlying the seed layer, wherein the gallium-contain-ing material is formed overlying the oxygen-containing material.
The method of semiconductor processing of claim 8, wherein the gallium-containing material is characterized by a dislocation density of less than or about 7E₉/cm2. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor LED structure
Materials described outside the worked examples.
aluminum nitride
AlN
hafnium nitride
HfN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dislocation density of gallium-containing material | ≤ 7000000000 /cm2 | gallium-containing material |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 28
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,557,436 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a top plan view of one embodiment of an exemplary processing system according to some embodi- ments of the present technology.
FIG. 2 shows selected operations in a method of forming a semiconductor structure according to some embodiments of the present technology.
FIGS. 3A-3C illustrate schematic views of a device developed according to some embodiments of the present technology.
FIG. 4 shows selected operations in a method of forming a semiconductor structure according to some embodiments of the present technology. Several of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of semiconductor processing comprising: forming a seed layer of a metal nitride on a substrate, wherein the seed layer is formed by physical vapor deposition, and the metal nitride is selected from the group consisting of aluminum nitride, hafnium nitride, and niobium nitride; annealing the seed layer at a temperature of greater than or about 1000° C. for a period of time greater than or about 60 minutes; exposing the seed layer to an acid; and forming a gallium-containing material on the seed layer.
The method of semiconductor processing of claim 1, wherein the seed layer comprises a nitride of aluminum, hafnium, or niobium.
The method of semiconductor processing of claim 1, wherein exposing the seed layer to the acid comprises: contacting the seed layer with a halogen-containing wet etchant.
The method of semiconductor processing of claim 1, wherein the gallium-containing material comprises gallium nitride.
The method of semiconductor processing of claim 1, wherein the gallium-containing material is characterized by 10 a dislocation density of less than or about 7E₉/cm2.
A method of semiconductor processing comprising: forming a seed layer of a metal nitride on a substrate, wherein the metal nitride is selected from the group consisting of aluminum nitride, hafnium nitride, and niobium nitride; subsequent to forming the seed layer, annealing the seed layer for a period of time; exposing the substrate to an oxygen-containing environ-ment; forming an oxide layer overlying the seed layer in the oxygen-containing environment; exposing the seed layer to an acid after forming the oxide layer; and forming a gallium-containing material on the seed layer.
The method of semiconductor processing of claim 8, wherein annealing the seed layer comprises an anneal at a temperature of greater than or about 1000° C. and wherein the period of time is greater than or about 60 minutes.
The method of semiconductor processing of claim 8, wherein the seed layer comprises a nitride of aluminum, hafnium, or niobium.
The method of semiconductor processing of claim 8, wherein the seed layer is formed by physical vapor deposi-tion.
The method of semiconductor processing of claim 8, wherein exposing the seed layer to the acid comprises: contacting the seed layer with a halogen-containing wet etchant; and maintaining an amount of an oxygen-containing material overlying the seed layer, wherein the gallium-contain-ing material is formed overlying the oxygen-containing material.
The method of semiconductor processing of claim 8, wherein the gallium-containing material is characterized by a dislocation density of less than or about 7E₉/cm2. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor LED structure
Materials described outside the worked examples.
aluminum nitride
AlN
hafnium nitride
HfN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dislocation density of gallium-containing material | ≤ 7000000000 /cm2 | gallium-containing material |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 28
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,557,436 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a top plan view of one embodiment of an exemplary processing system according to some embodi- ments of the present technology.
FIG. 2 shows selected operations in a method of forming a semiconductor structure according to some embodiments of the present technology.
FIGS. 3A-3C illustrate schematic views of a device developed according to some embodiments of the present technology.
FIG. 4 shows selected operations in a method of forming a semiconductor structure according to some embodiments of the present technology. Several of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of semiconductor processing comprising: forming a seed layer of a metal nitride on a substrate, wherein the seed layer is formed by physical vapor deposition, and the metal nitride is selected from the group consisting of aluminum nitride, hafnium nitride, and niobium nitride; annealing the seed layer at a temperature of greater than or about 1000° C. for a period of time greater than or about 60 minutes; exposing the seed layer to an acid; and forming a gallium-containing material on the seed layer.
The method of semiconductor processing of claim 1, wherein the seed layer comprises a nitride of aluminum, hafnium, or niobium.
The method of semiconductor processing of claim 1, wherein exposing the seed layer to the acid comprises: contacting the seed layer with a halogen-containing wet etchant.
The method of semiconductor processing of claim 1, wherein the gallium-containing material comprises gallium nitride.
The method of semiconductor processing of claim 1, wherein the gallium-containing material is characterized by 10 a dislocation density of less than or about 7E₉/cm2.
A method of semiconductor processing comprising: forming a seed layer of a metal nitride on a substrate, wherein the metal nitride is selected from the group consisting of aluminum nitride, hafnium nitride, and niobium nitride; subsequent to forming the seed layer, annealing the seed layer for a period of time; exposing the substrate to an oxygen-containing environ-ment; forming an oxide layer overlying the seed layer in the oxygen-containing environment; exposing the seed layer to an acid after forming the oxide layer; and forming a gallium-containing material on the seed layer.
The method of semiconductor processing of claim 8, wherein annealing the seed layer comprises an anneal at a temperature of greater than or about 1000° C. and wherein the period of time is greater than or about 60 minutes.
The method of semiconductor processing of claim 8, wherein the seed layer comprises a nitride of aluminum, hafnium, or niobium.
The method of semiconductor processing of claim 8, wherein the seed layer is formed by physical vapor deposi-tion.
The method of semiconductor processing of claim 8, wherein exposing the seed layer to the acid comprises: contacting the seed layer with a halogen-containing wet etchant; and maintaining an amount of an oxygen-containing material overlying the seed layer, wherein the gallium-contain-ing material is formed overlying the oxygen-containing material.
The method of semiconductor processing of claim 8, wherein the gallium-containing material is characterized by a dislocation density of less than or about 7E₉/cm2. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor LED structure
Materials described outside the worked examples.
aluminum nitride
AlN
hafnium nitride
HfN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
dislocation density of gallium-containing material | ≤ 7000000000 /cm2 | gallium-containing material |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 28
Related documents with shared materials, methods, properties, or citations.
niobium nitride
NbN
gallium-containing material
oxygen-containing layer
gallium nitride
GaN
silicon
Si
Cited non-patent literature · 5
niobium nitride
NbN
gallium-containing material
oxygen-containing layer
gallium nitride
GaN
silicon
Si
Cited non-patent literature · 5
niobium nitride
NbN
gallium-containing material
oxygen-containing layer
gallium nitride
GaN
silicon
Si
Cited non-patent literature · 5
niobium nitride
NbN
gallium-containing material
oxygen-containing layer
gallium nitride
GaN
silicon
Si
Cited non-patent literature · 5